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    SK Hynix Inc HY5118164CJC-60

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    Bristol Electronics HY5118164CJC-60 44
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    SK Hynix Inc HY5118164CSLJC-60

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    Quest Components HY5118164CSLJC-60 612
    • 1 $14.046
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    HY5118164C Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY5118164C Hyundai 1Mx16, Extended Data Out mode Original PDF

    HY5118164C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: « « r U H D A I • HYM532224C W-Series > 2Mx32 bit EDO DRAM MODULE based on 1Mx16 DRAM, 5V, tK-Retresh GENERAL DESCRIPTION The HYM532224C W-Series is a 2Mx32-bit Extended Data Out mode CMOS DRAM module consisting of four HY5118164C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. O.IjtF and 0.01(i.F


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    HYM532224C 2Mx32 1Mx16 2Mx32-bit HY5118164C HYM532224CW HYM532224CWG 72-Pin 256ms PDF

    HY5118164CJC

    Abstract: HY5118164C
    Text: HY5118164C,HY5116164C 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original
    HY5118164C HY5116164C 1Mx16, 16-bit 1Mx16 HY5118164CJC PDF

    HY5118164C

    Abstract: HY5116164C HY5118164CJC
    Text: HY5118164C,HY5116164C 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original
    HY5118164C HY5116164C 1Mx16, 16-bit 1Mx16 HY5116164C HY5118164CJC PDF

    HY5118164C

    Abstract: HY5118164CJC
    Text: HY5118164C,HY5116164C 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original
    HY5118164C HY5116164C 1Mx16, 16-bit 1Mx16 10/Sep HY5118164CJC PDF

    HY5118164C

    Abstract: HY5118164 HY5118164CJC
    Text: HY5118164C,HY5116164C 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original
    HY5118164C HY5116164C 1Mx16, 16-bit 1Mx16 10/Sep HY5118164 HY5118164CJC PDF

    HY5118164C

    Abstract: HYM564224C HYM564224CTXG HYM564224CXG
    Text: HYM564224C X-Series Buffered 2Mx64 bit CMOS DRAM MODULE based on 1Mx16 DRAM, EDO, 1K-Refresh GENERAL DESCRIPTION The HYM564224C X-Series is a 2Mx64-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5118164C in 42 pin SOJ and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy


    Original
    HYM564224C 2Mx64 1Mx16 2Mx64-bit HY5118164C 16-bit HYM564224CXG 168-Pin HYM564224CTXG PDF

    HY5118164B

    Abstract: HY5118164BJC HY5116164B
    Text: HY5118164B,HY5116164B 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original
    HY5118164B HY5116164B 1Mx16, 16-bit 1Mx16 HY5118164BJC HY5116164B PDF

    5118164

    Abstract: Hyundai 5118164 hy5116164csljc
    Text: ’ « Y U H P W I * > H Y 5118164C,H Y5116164C 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


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    1Mx16, 16-bit A0-A11) DQ0-DQ15) 5118164 Hyundai 5118164 hy5116164csljc PDF

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original
    CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51 PDF

    TIME03

    Abstract: No abstract text available
    Text: -H YU M Dfll -• HY5118164B,HY5116164B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


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    HY5118164B HY5116164B 1Mx16, 16-bit DG0-DQ15) TIME03 PDF

    HY514260

    Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
    Text: •'HYUNDAI — • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUIC REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 1M-bit DRAM Page HY531000A. 1M x1-bit, 5V, F P .


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    HY531000A. HY534256A. 256Kx4-bit, HY512260. 128KX16-bit, HY514260 HY5118160 HY5116160 HY5117404 HY51V65400 HY511616 PDF

    Hy5118164B

    Abstract: hy51181648 HY5118164C HY5118164
    Text: •HYUNDAI H Y 5 1 1 8 1 6 4 B .H Y 5 1 1 6 1 6 4 B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process


    OCR Scan
    HY5118164B HY5116164B 1Mx16, 16-bit A0-A11) DQ0-DQ15) 1Mx16 hy51181648 HY5118164C HY5118164 PDF