HY5118164CJC
Abstract: HY5118164C
Text: HY5118164C,HY5116164C 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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HY5118164C
HY5116164C
1Mx16,
16-bit
1Mx16
HY5118164CJC
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HY5118164C
Abstract: HY5116164C HY5118164CJC
Text: HY5118164C,HY5116164C 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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Original
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PDF
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HY5118164C
HY5116164C
1Mx16,
16-bit
1Mx16
HY5116164C
HY5118164CJC
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HY5118164C
Abstract: HY5118164CJC
Text: HY5118164C,HY5116164C 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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Original
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PDF
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HY5118164C
HY5116164C
1Mx16,
16-bit
1Mx16
10/Sep
HY5118164CJC
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HY5118164C
Abstract: HY5118164 HY5118164CJC
Text: HY5118164C,HY5116164C 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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Original
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PDF
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HY5118164C
HY5116164C
1Mx16,
16-bit
1Mx16
10/Sep
HY5118164
HY5118164CJC
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HY5118164C
Abstract: HYM564224C HYM564224CTXG HYM564224CXG
Text: HYM564224C X-Series Buffered 2Mx64 bit CMOS DRAM MODULE based on 1Mx16 DRAM, EDO, 1K-Refresh GENERAL DESCRIPTION The HYM564224C X-Series is a 2Mx64-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5118164C in 42 pin SOJ and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy
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HYM564224C
2Mx64
1Mx16
2Mx64-bit
HY5118164C
16-bit
HYM564224CXG
168-Pin
HYM564224CTXG
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HY5118164B
Abstract: HY5118164BJC HY5116164B
Text: HY5118164B,HY5116164B 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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Original
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PDF
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HY5118164B
HY5116164B
1Mx16,
16-bit
1Mx16
HY5118164BJC
HY5116164B
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mn4117405
Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE
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CP005-1F
IS89C51
Z16C02
Z86E30
ZZ16C03
Z8036
Z8536
Z8038
Z5380
Z53C80
mn4117405
NN5118165
XL93LC46AP
NN514265
MS6264L-10PC
w24M257
NN514265A
w24m257ak-15
HY62256ALP10
mhs p80c51
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Untitled
Abstract: No abstract text available
Text: « « r U H D A I • HYM532224C W-Series > 2Mx32 bit EDO DRAM MODULE based on 1Mx16 DRAM, 5V, tK-Retresh GENERAL DESCRIPTION The HYM532224C W-Series is a 2Mx32-bit Extended Data Out mode CMOS DRAM module consisting of four HY5118164C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. O.IjtF and 0.01(i.F
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HYM532224C
2Mx32
1Mx16
2Mx32-bit
HY5118164C
HYM532224CW
HYM532224CWG
72-Pin
256ms
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5118164
Abstract: Hyundai 5118164 hy5116164csljc
Text: ’ « Y U H P W I * > H Y 5118164C,H Y5116164C 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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OCR Scan
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PDF
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1Mx16,
16-bit
A0-A11)
DQ0-DQ15)
5118164
Hyundai 5118164
hy5116164csljc
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TIME03
Abstract: No abstract text available
Text: -H YU M Dfll -• HY5118164B,HY5116164B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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OCR Scan
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PDF
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HY5118164B
HY5116164B
1Mx16,
16-bit
DG0-DQ15)
TIME03
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HY514260
Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
Text: •'HYUNDAI — • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUIC REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 1M-bit DRAM Page HY531000A. 1M x1-bit, 5V, F P .
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HY531000A.
HY534256A.
256Kx4-bit,
HY512260.
128KX16-bit,
HY514260
HY5118160
HY5116160
HY5117404
HY51V65400
HY511616
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Hy5118164B
Abstract: hy51181648 HY5118164C HY5118164
Text: •HYUNDAI H Y 5 1 1 8 1 6 4 B .H Y 5 1 1 6 1 6 4 B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process
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OCR Scan
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PDF
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HY5118164B
HY5116164B
1Mx16,
16-bit
A0-A11)
DQ0-DQ15)
1Mx16
hy51181648
HY5118164C
HY5118164
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