Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    Y 331 TRANSISTOR Search Results

    Y 331 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    Y 331 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    N331

    Abstract: SICK WT 4-2 sick optic switching transistor 331 P 331 HF 331 transistor 2N330 4-2P330
    Text: WT 4-2 W T 4-2 P 331 -N 331 W T 4-2 P 132 -N 132 V Scanning range ¥ Y 130 m m - Features 12- W T 4-2 P 330 -N 330 Red light sender LED to assist with setting-up Scanning distance is steplessly variable A Background suppression • Adjustment aided by LED signal


    OCR Scan     		-2P33I -2N33I 1000/s N331 SICK WT 4-2 sick optic switching transistor 331 P 331 HF 331 transistor 2N330 4-2P330 PDF

    Untitled

    Abstract: No abstract text available
    Text: T ra n s is to rs <S u rfa ce Mounted T y p e s > •SMT SC-59/Japanese SOT-23 •NPN Transistors Function Type ■ Ic (mA) Max. Polarity DG07717 BV ceo (V) BV ebo (V) 331 ■RHM @IC & VcE hpE Min. nonm Max. (mA) f T (MHz) Min. (V) Cob (pF) Max. LNGPA MMST5086


    OCR Scan     		SC-59/Japanese OT-23) DG07717 MMST5086 MMST-A20 MMST2222 MMST2222A MMST4401 UHFO-A56 MMST-A63 PDF

    VE880

    Abstract: LE88311 sumida c8100 MBT3946DW1T1LRG LE88311DLC IIR NEON le88331 MURS120DICT-ND VE880 "pin compatible" rft rg1
    Text: A D V A N C E D C O P Y Le88311/331 Dual Channel Tracking Battery VoicePort™ Device VE880 Series APPLICATIONS „ „ „ „ „ ORDERING INFORMATION Voice enabled Cable and DSL Modems Voice over IP/ATM - Integrated Access Devices IAD Residential VoIP Gateways and Routers


    Original     		Le88311/331 VE880 Le88311/331 LE88311 sumida c8100 MBT3946DW1T1LRG LE88311DLC IIR NEON le88331 MURS120DICT-ND VE880 "pin compatible" rft rg1 PDF

    Untitled

    Abstract: No abstract text available
    Text: • i<302271 0 D 5 4 1 7 G flb2 ■ [g HARRIS HAS IRFF330/331/332/333 IRFF330R/331R/332R/333R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Package Features TO-2Q5AF • 3 .0 A and 3 .5 A , 3S0V - 400V • rD S o n = 1-Oft and 1 -5 0 • S in g le P u lse A valan ch e En erg y R ated*


    OCR Scan     		IRFF330/331/332/333 IRFF330R/331R/332R/333R FF330, FF331, RFF332, FF333 IRFF330R, IRFF331R, FF332R /RFF333R PDF

    sdt9303

    Abstract: 2n3441 2N3441 JAN 2N3772 SOLITRON
    Text: S0LITR0NDEVICES INC 8 3 6 8 6 0 2 SOL ITRON D E V I C E S DEI fl3bflL,D2 00057ÖBS i» INC 95D 02 78 2 T ' 3 3 - o / 3 P 1 is [^ [D y Tr ©Æ\TFÆ\[L@ J fw ’MDevices, trm Inc. SINGLE DIFFUSED l\IPI\l M E S A TRANSISTORS © ¿mw> M\PM DEVICE TYPE hpE @


    OCR Scan     		2N3441 2N3054 2N6258 MIL-S19500/ 2N3055 2N3441 2N3442 2N3771 2N3772 sdt9303 2N3441 JAN 2N3772 SOLITRON PDF

    C 331 Transistor

    Abstract: transistor 331 331 transistor transistor C 331 y 331 Transistor transistor 331 8 of ic 331 transistor 331 p g060 NPN/transistor C 331
    Text: LINEAR INTEGRATED CIRCUIT TBA 331 GENERAL PURPOSE The TBA 331 is an assembly of 5 silicon NPN transistors on a common monolithic substrate In a Jedec TO-116 14-lead dual in-line plastic package. Two transistors are internally connected to form a differential amplifier.


    OCR Scan     		O-116 14-lead C 331 Transistor transistor 331 331 transistor transistor C 331 y 331 Transistor transistor 331 8 of ic 331 transistor 331 p g060 NPN/transistor C 331 PDF

    transistor B A O 331

    Abstract: D F 331 TRANSISTOR
    Text: SIEMENS BUZ 331 SIPMOS Power Transistor Type BUZ 331 CO i • N channel • Enhancement mode • Avalanche rated 500 V Id Tc ^DS on Package 1> Ordering Code 8.0 A 35 ’C 0.8 Q TO-218 AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		O-218 C67078-S3114-A2 SILO3821 transistor B A O 331 D F 331 TRANSISTOR PDF

    DF 331 TRANSISTOR

    Abstract: transistor df 331 d 331 TRANSISTOR equivalent transistor b 1560 C 331 Transistor transistor h 331 y 331 Transistor transistor B A O 331 transistor 331 p D F 331 TRANSISTOR
    Text: SOLITRON DEVICES INC ELEMENT NUMBER Üb DF|ü3höbD2 0D02ST3 D ~ M ED IU M VOLTAGE NPN SINGLE DIFFUSED MESA TRANSISTOR F O R M E R L Y 31 C O N T A C T M E T A L L IZ A T IO N Case, Emitter and Collector: So ld e r Coated 9 5 / 5 % lead/tin. A S S E M B L Y R E C O M M E N D A T IO N S


    OCR Scan     		0D02ST3 DF 331 TRANSISTOR transistor df 331 d 331 TRANSISTOR equivalent transistor b 1560 C 331 Transistor transistor h 331 y 331 Transistor transistor B A O 331 transistor 331 p D F 331 TRANSISTOR PDF

    lt 332 diode

    Abstract: 4242 DM 4243 dm IRFF330 IRFF331 IRFF332 IRFF333 diode 331 t2235 QA-750
    Text: 1 &£ D SILICONIX INC • Ö 2 5 4 7 3 5 GDlMflEl b ■ IRFF330/331/332/333 C T 'S ilico n ix Jm W incorporated N-Channel Enhancement Mode Transistors T TCJ-205AF - ^ - o q . BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR|DSS IRFF330 400 1.0 3.5 IRFF331 350


    OCR Scan     		IRFF330/331/332/333 IRFF330 IRFF331 IRFF332 IRFF333 O-205AF lt 332 diode 4242 DM 4243 dm diode 331 t2235 QA-750 PDF

    IRF3303

    Abstract: OA 161 diode IRFF330 IRFF331 IRFF332 IRFF333
    Text: - Standard Power MOSFETs File Number IRFF330, IRFF331, IRFF332, IRFF333 1893 N-Channel Enhancement-Mode Power Field-Effect Transistors 3.0A and 3.5A, 350V - 400V rD S o n = 1.00 and 1.50 N-CHANNEL ENHANCEMENT MODE Features: •


    OCR Scan     		IRFF330, IRFF331, IRFF332, IRFF333 IRFF332 IRFF333 IFF33 IRF3303 OA 161 diode IRFF330 IRFF331 PDF

    p331

    Abstract: SGSP130
    Text: S G S-THOMSON 07E D | 7 ^ 2 3 7 0Dl7fl07 b | _ 73C 1 7 3 0 4 _ O j T Z J - O y _ _ ê f. V ñ K W% i I 1 • SGSP13Ò/P13Ì/P132 ;] SGSP230/P231/P232 .4 SGSP330/P331/P332 - 1 N-CHÀNNEL POWER MOS TRANSISTORS & HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate


    OCR Scan     		0Dl7fl07 SGSP13Ã /P132 SGSP230/P231/P232 SGSP330/P331/P332 OT-82 O-220 SGSP130 SGSP230 SGSP330 p331 SGSP130 PDF

    XC6902N

    Abstract: XC6902 C01 SOT23 ta1323
    Text: XC6902 Series ETR0363-002a -16V Input Three Terminal Negative Voltage Regulator •GENERAL DESCRIPTION The XC6902 Series is a negative voltage CMOS regulator which includes a reference voltage source, error amplifiers, driver transistors, current limiters and phase compensators.


    Original     		XC6902 ETR0363-002a 200mA XC6902N C01 SOT23 ta1323 PDF

    transistor h 331

    Abstract: D F 331 TRANSISTOR C 331 Transistor transistor d 331 d 331 Transistor transistor 331 p 331 transistor y 331 Transistor transistor 331 VQE 22 led
    Text: SIEMENS SMT Multi TOPLED SFH 331 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Typ Type Bestellnummer Ordering Code SFH 331 Q62702-P1634 W esentliche Merkmale • Geeignet für Vapor-Phase Löten und IR-Reflow Löten


    OCR Scan     		Q62702-P1634 hotocurrent/pCE//pCE250 transistor h 331 D F 331 TRANSISTOR C 331 Transistor transistor d 331 d 331 Transistor transistor 331 p 331 transistor y 331 Transistor transistor 331 VQE 22 led PDF

    XC6901D

    Abstract: XC6901 p-channel mosfet with diode sot89-5 ta1527 marking 005c
    Text: XC6901 Series ETR0343-005c 200mA Negative Voltage Regulator with ON/OFF Control •GENERAL DESCRIPTION The XC6901 Series is a negative voltage CMOS regulator which includes a reference voltage source, error amplifier, driver transistor, current limiter and phase compensator.


    Original     		XC6901 ETR0343-005c 200mA XC6901D p-channel mosfet with diode sot89-5 ta1527 marking 005c PDF

    XC6901D331MR-G

    Abstract: XC6901D301MR-G XC6901D501MR-G XC6901D XC6901D251ER-G XC6901D301ER-G ta1628 XC6901D251MR-G XC6901 03VVOUT2
    Text: XC6901 Series ETR03043-006 200mA Negative Voltage Regulator with ON/OFF Control •GENERAL DESCRIPTION The XC6901 Series is a negative voltage CMOS regulator which includes a reference voltage source, error amplifier, driver transistor, current limiter and phase compensator.


    Original     		XC6901 200mA ETR03043-006 XC6901D331MR-G XC6901D301MR-G XC6901D501MR-G XC6901D XC6901D251ER-G XC6901D301ER-G ta1628 XC6901D251MR-G 03VVOUT2 PDF

    bpw 81 t

    Abstract: SFH213 sfh 206 BP 104 FAS
    Text: S i -F o t o d e t e k t o r e n S il ic o n P h o t o d e t e c t o r s T y p e n ü b e r s ic h t S ummary 1. 1. Foto IC für Fernsteuerung SFH 5110 2. SFH 5410 Fotodetektoren in SM T T ypes Photo IC for Remote Control SFH 5111 2. 2.1.SM T-Transistoren


    OCR Scan     		E9087) SFH3410 bpw 81 t SFH213 sfh 206 BP 104 FAS PDF

    2SB133

    Abstract: No abstract text available
    Text: ROHM CO MOE LTD TASÓTE D ODGSbST I RHM S 2SB1335 h V > y X $ //Transistors 7=33-^ 9 2SB133; X fcf £ *r V 7 ¡ V f b - i~ M PNP y V □ > h ÿ > y X $ MJMÌ&WJjiMtymffì/Low Freq. Power Amp, Epitaxial Planar PNP Silicon Transistor 1 VcE sat) VcE(sat)=-0.5V (Typ.) Ic /I b = —


    OCR Scan     		2SB1335 2SB133; 2SD1855 T0220FP i314ffi T-33-19 2SB133 PDF

    Untitled

    Abstract: No abstract text available
    Text: O rdering num ber: EN 2 4 3 4 2SD1887 No.2434 N PN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection _ Output Applications Applications . Color TV horizontal deflection output . Color display horizontal deflection output Features


    OCR Scan     		2SD1887 100ns PDF

    Untitled

    Abstract: No abstract text available
    Text: warn P H O 'TO T R A N S IS T O R ?*, ¡-x PHI 04 PHOTO TRANSISTOR - N E P O C SERIES — The PH 104 is a photo transistor in a plastic molded package, and PACKAGE DIMENSIONS very suitable for a detector of a photo interrupter. in millimeters inches 5.0


    OCR Scan     		102nm J22686 PDF

    2SD1767

    Abstract: No abstract text available
    Text: 2SD1767 N ~7> V 7. £ /Transistors O O Q 4 I t f ^ d r v 7 7 ; u y u - ^ N # w f P N Epitaxial Planar NPN Silicon Transistor f i ^ j 5 S ^ l i ,H ffl/L o w Freq. Power Amp. • « * 1) = l U ? * j a £ , PC= 2 W T 'S - 5 40 X 4 0 X 0.7mm Hz 5 5 y ? S H 3 ifN i) o


    OCR Scan     		2SD1767 SC-62 2SD1767 PDF

    BSP15

    Abstract: BSP19 BSP20
    Text: •i bb53T31 0055450 Tlfl H A P X N AMER PHIL IPS /DISCRETE BSP19 BSP20 b?E » SILICO N PLANAR EPITAXIAL TRANSISTO RS NPN transistors in m iniature plastic envelopes intended fo r use in a m plifier and switching applications. Com plem entary pnp types are BSP15/16.


    OCR Scan     		bb53131 BSP19 BSP20 BSP15/16. OT-223 BSP15 BSP20 PDF

    bd955

    Abstract: BD955F 952F BD949F BD950F BD951F BD953F BD954F
    Text: BD950F;952F SbE D PHILIPS INTERNATIONAL • R D Q fid F - QÇ>RF 711D02ti 0 0 4 3 1 1 b 432 H P H I N SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each in a SOT186 envelope w ith an electrically insulated mounting base. NPN complements are BD949F, BD951F, BD953F and BD955F.


    OCR Scan     		BD950F 004311b OT186 BD949F, BD951F, BD953F BD955F. BD950F bd955 BD955F 952F BD949F BD951F BD954F PDF

    NEC Ga FET marking L

    Abstract: U/25/20/TN26/15/850/NE32984D
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm


    OCR Scan     		NE32984D NE32984D NE32984D-SL NE32984Dr NEC Ga FET marking L U/25/20/TN26/15/850/NE32984D PDF

    2SB1316A

    Abstract: No abstract text available
    Text: Is ~7 > y 7 . $ / Transistors S 2 2SB1316 X fc: B 1 3 1 6 V T \s -? Is -H fc PNP V V =>> h =7> V * 2 h>& ü) Epitaxial Planar PNP Silicon Transistor Darlington) fé J ü í& ^ íltiff l/ l- o w Freq. Power Amp. /D im ensions (Unit : mm) 1) SET'h 2) 2 . 3 - ; =


    OCR Scan     		2SB1316 2SB1316A PDF