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    VENKEL LTD MELFC0207-XN-1872CT

    MELF Coated Thin Film CR;0207;1W;�10PPM;18.7K;�0.25%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Venkel Ltd. MELFC0207-XN-1872CT Reel 6 Weeks, 3 Days 2,000
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    VENKEL LTD MELFC0207-XN-1872FT

    MELF Coated Thin Film CR;0207;1W;�10PPM;18.7K;�1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Venkel Ltd. MELFC0207-XN-1872FT Reel 6 Weeks, 3 Days 2,000
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    VENKEL LTD MELFC0207-XN-1872BT

    MELF Coated Thin Film CR;0207;1W;�10PPM;18.7K;�0.1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Venkel Ltd. MELFC0207-XN-1872BT Reel 6 Weeks, 3 Days 2,000
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    VENKEL LTD MELFC0207-XN-1872DT

    MELF Coated Thin Film CR;0207;1W;�10PPM;18.7K;�0.5%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Venkel Ltd. MELFC0207-XN-1872DT Reel 6 Weeks, 3 Days 2,000
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    XN1872 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    XN1872 Panasonic Silicon n-channel enhancement MOSFET Original PDF
    XN1872 Panasonic Silicon N-channel, Enhancement MOS FET Original PDF
    XN1872 Panasonic N-Channel Enhancement MOS FET Composite Transistors Original PDF
    XN1872 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    XN1872 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK621

    Abstract: XN01872 XN1872 FET23
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10


    Original     		PDF 2002/95/EC) XN01872 XN1872) 2SK621 XN01872 XN1872 FET23

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 • Two elements incorporated into one package (Source-coupled FETs)


    Original     		PDF 2002/95/EC) XN01872 XN1872) 2SK0621 2SK621)

    2SK621

    Abstract: XN1872
    Text: Composite Transistors XN1872 Silicon N-channel • Enhancement MOS FET Unit: mm For switching +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SK621 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element 0.16 -0.06 +0.1


    Original     		PDF XN1872 2SK621 2SK621 XN1872

    2SK621

    Abstract: XN01872 XN1872 FET MARKING
    Text: Composite Transistors XN01872 XN1872 Silicon N-channel • Enhancement MOS FET Unit: mm For switching +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SK0621(2SK621) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN01872 XN1872) 2SK0621 2SK621) 2SK621 XN01872 XN1872 FET MARKING

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 • Two elements incorporated into one package (Source-coupled FETs)


    Original     		PDF 2002/95/EC) XN01872 XN1872) 2SK0621 2SK621)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Two elements incorporated into one package (Source-coupled FETs)


    Original     		PDF 2002/95/EC) XN01872 XN1872)

    2SK621

    Abstract: XN01872 XN1872 JIS C 1102
    Text: Composite Transistors XN01872 XN1872 Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 • Two elements incorporated into one package (Source-coupled FETs) • Reduction of the mounting area and assembly cost by one half


    Original     		PDF XN01872 XN1872) 2SK621 XN01872 XN1872 JIS C 1102

    2SK621

    Abstract: XN01872 XN1872
    Text: Composite Transistors XN01872 XN1872 Silicon N-channel • Enhancement MOS FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● Two elements incorporated into one package. (Source-coupled FETs) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XN01872 XN1872) 2SK0621 2SK621) 2SK621 XN01872 XN1872

    2SK621

    Abstract: XN1872 XN01872
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10


    Original     		PDF 2002/95/EC) XN01872 XN1872) 2SK621 XN1872 XN01872

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SK621

    Abstract: xn7651 pnp and npn Mini Type (D7) 360-200 2SK1103 2SK1842 2SK198 UN2213 XN1871
    Text: Transistors Selection Guide by Applications and Functions • FET 5 Pin Mini Type (D12) n n n . . .n Main Characteristics H rrm r1 V ds Application U U Li Neh 2 elements XN1871 Low noise amp. switching n (A) (V) XN1872 * 30 0.02 50 0.1 v,„ Idss (V) (mA)


    OCR Scan     		PDF XN1871 2SK198 XN1872 2SK621 XN1D873/XP1D873 2SK1103 XN1D874/XP1D874 2SK1842 AUN228 AUN230 2SK621 xn7651 pnp and npn Mini Type (D7) 360-200 2SK1103 2SK1842 2SK198 UN2213 XN1871

    2SK621

    Abstract: No abstract text available
    Text: Transistors Selection Guide by Applications and Functions • FET 5 Pin Mini Type (D 15) n Main Characteristics n V ds Application ü * V dsx LJ LI LI U LJ Neh 2 elements (V) *30 50 XN1872 n (A) (V) Basic gm loss (mA) (mS) 0.02 0.5 - 1 2 0.1 - V ds Id (mA)


    OCR Scan     		PDF 2SK198 2SK621 XN1871 XN1872 XN1D873/XP1D873 XN1D874/XP1D874 2SK1103 2SK1842 AUN228 AUN230 2SK621

    Untitled

    Abstract: No abstract text available
    Text: Transistors Selection Guide by Applications and Functions • FET 5 Pin Mini Type (D12) n n n . .n U U Li u u u Neh 2 elements Nch 2 elements Hrrmr1 Application Low noise amp. switching Main Characteristics Vds * Vdsx (V) XN1872 n (V) 0.1 1.5 —3.5 Id


    OCR Scan     		PDF XN1872 XN1D874/XP1D874 2SK198 2SK621 XN1D873/XP1D873 NPNf2SD132R^ SO-10C SO-14CD79) SO-14

    d20 diode

    Abstract: 2SJ497
    Text: Transistors Selection Guide by Applications and Functions • FET 5-Pin Mini T y p e (D15) n n M ain C h a ra cteristics n_ n w r "~l U U U Application m V dsx (mA) (V) N -ch 2 elem en ts XN1871 - * 30 20 - 100 1.5 to 3.5 6-Pin S-Mini (D15) Type (D9)


    OCR Scan     		PDF 2SK198 2SK621 XN1871 XN1872 2SB970) 2SD1328) d20 diode 2SJ497

    5pin marking VJ

    Abstract: marking AE 5pin AX05 N2211 9p marking 2SD601 Z 211H
    Text: ^ S 5 S S í / ^ y*T — V Mini Type (5-pin) Package FET Transistors, FETs U n it : mm »•»fri i s-8:8t 0.6510.15 5 - M ( 5 îS i) /N " ^ - v ■>'■Ÿ < "J * T - X 7 ( i , S£#<D$ - m m v t m -E E } v n -S 3 - 4 b 7 > > * 2 4' a (7>a^-ib ft Jfc L t i l


    OCR Scan     		PDF UN2215 2SD601 2SC3130 2SB709A 2SD601A UN2112 UN2212 5pin marking VJ marking AE 5pin AX05 N2211 9p marking Z 211H