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    2SK621

    Abstract: XN01872 XN1872 FET MARKING
    Text: Composite Transistors XN01872 XN1872 Silicon N-channel • Enhancement MOS FET Unit: mm For switching +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SK0621(2SK621) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN01872 XN1872) 2SK0621 2SK621) 2SK621 XN01872 XN1872 FET MARKING

    2SK621

    Abstract: XN01872 XN1872 FET23
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10


    Original     		PDF 2002/95/EC) XN01872 XN1872) 2SK621 XN01872 XN1872 FET23

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 • Two elements incorporated into one package (Source-coupled FETs)


    Original     		PDF 2002/95/EC) XN01872 XN1872) 2SK0621 2SK621)

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 • Two elements incorporated into one package (Source-coupled FETs)


    Original     		PDF 2002/95/EC) XN01872 XN1872) 2SK0621 2SK621)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Two elements incorporated into one package (Source-coupled FETs)


    Original     		PDF 2002/95/EC) XN01872 XN1872)

    2SK621

    Abstract: XN01872 XN1872 JIS C 1102
    Text: Composite Transistors XN01872 XN1872 Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 • Two elements incorporated into one package (Source-coupled FETs) • Reduction of the mounting area and assembly cost by one half


    Original     		PDF XN01872 XN1872) 2SK621 XN01872 XN1872 JIS C 1102

    2SK621

    Abstract: XN01872 XN1872
    Text: Composite Transistors XN01872 XN1872 Silicon N-channel • Enhancement MOS FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● Two elements incorporated into one package. (Source-coupled FETs) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XN01872 XN1872) 2SK0621 2SK621) 2SK621 XN01872 XN1872

    2SK621

    Abstract: XN1872 XN01872
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10


    Original     		PDF 2002/95/EC) XN01872 XN1872) 2SK621 XN1872 XN01872