Si502
Abstract: No abstract text available
Text: Si501/2/3 3 2 K H Z –100 MH Z CMEMS オ シ レ ー タ 機能 広い周波数範囲：32 kHz~100 MHz 周波数が 100 MHz 以上の場合は Silicon Labs にお問い合わせくだ さい。
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Si501/2/3
Si501
Si502
Si503
Si502
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OAOLP2
Abstract: temperature digital display JUMO Lan M smd transistor 1p7 bti ml-2 transistor SMD 1p6 transistor DK qe smd edto 116.4 8052ah basic toba 639 270645
Text: MCS@51 MICROCONTROLLER FAMILY USER’S MANUAL ORDER NO.: 272383-002 FEBRUARY 1994 Intel Corporation makes no warrsnfy for the uee of ite products and assumes no responsibility for any ewors which may appear in this document nor does it make a commitment to update the information contained herein.
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15consecutive
OAOLP2
temperature digital display JUMO Lan M
smd transistor 1p7
bti ml-2
transistor SMD 1p6
transistor DK qe smd
edto 116.4
8052ah basic
toba 639
270645
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SI500D
Abstract: No abstract text available
Text: Si500D D IFFERENTIAL O UTPUT S I L I C O N O SCILLATOR Features Quartz-free silicon oscillator Any-rate output frequencies from 0.9 to 200 MHz Quick turn delivery Highly reliable startup and operation Tri-state or power down operation 1.8, 2.5, or 3.3 V options
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Si500D
25ion
SI500D
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SI511
Abstract: SI510
Text: S i510/5 11 Ỉ ᬗ࢜ࢩ ࣞ ࣮ ࢱ X O 1 0 0 k H Z 㹼 2 5 0 MH Z ᶵ⬟ 100 kHz 㹼 250 MHz ࡢࡢ࿘Ἴᩘ ࡛ࡶࢧ࣏࣮ࢺ పࢪࢵࢱ࣮ືస 2 㹼 4 㐌㛫ࡢ࣮ࣜࢻࢱ࣒ 10 ᖺ࢚࣮ࢪࣥࢢࢆྵࡴయᏳᐃᗘ
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i510/5
Si5602
Si510/511
Si510
Si511
SI511
SI510
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Si500D
Abstract: xmxxxxx 500D AN409 Si500 Si500S
Text: Si500D D IFFERENTIAL O UTPUT S I L I C O N O SCILLATOR Features Quartz-free, MEMS-free, and PLL-free all-silicon oscillator Any output frequencies from 0.9 to 200 MHz Short lead times Excellent temperature stability ±20 ppm
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Si500D
10-year
Si500D
xmxxxxx
500D
AN409
Si500
Si500S
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"Supervisory Circuits"
Abstract: 200NS 250NS 55NS 70NS PARALLEL E2PROM NOVRAM 2k x 8
Text: Ordering Information PARALLEL E2PROM PARALLEL NOVRAM XXXXX X XX –XX TX FOR TAPE AND REEL AND DRY PACK, SEE T-CODE SECTION. DEVICE PART NUMBER ACCESS TIME BLANK = 300ns –25 = 250ns –20 = 200ns –15 = 150ns –90 = 90ns –70 = 70ns –55 = 55ns –45 = 45ns
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300ns
250ns
200ns
150ns
MIL-STD-883
"Supervisory Circuits"
200NS
250NS
55NS
70NS
PARALLEL E2PROM
NOVRAM 2k x 8
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PDF
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SI511
Abstract: SI510
Text: S i 510/5 11 Წ ։ᥥ㦗 ಞ X O 100 k H Z 㠩 2 5 0 MH Z ࣕ㜳 ᭥ᤷԄ 100 kHz ࡦ 250 MHz 䰪Ⲻ Աᝅ仇⦽ քᣌࣞᬃ֒ 2 㠩 4 ઞӚԎઞᵕ ᮪։どᇐᙝਥؓ䇷ֵ⭞ 10 ᒪ 㔲ਾ⭕ӝ⎁䈋㤹പऻᤢᲬ։ ESR ૂ DLD
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Si5602
Si510/511
Si510
Si510
Si511
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MP221
Abstract: mp221-e MP-122C MP111B MP270 MP037-E MP184A-E MP320B-E MP018S MP020S
Text: MP Series Quartz Crystal FEATURES • • • • • • • • • Standard HC-49/U Package, HC-49/U SM Package Option Available Stable Frequency Over Temperature and Drive Level Fundamental and 3rd Overtone Crystals Frequency Range 1.8432 – 64 MHz Frequency Tolerance, ±30 ppm Standard
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HC-49/U
2x10-8
100VDC
15VDC.
J-STD-020.
MP221
mp221-e
MP-122C
MP111B
MP270
MP037-E
MP184A-E
MP320B-E
MP018S
MP020S
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PDF
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67c4033-15n
Abstract: No abstract text available
Text: 67C4033 Advanced Micro Devices Low Density First-In First-Out FIFO 64 x 5 CMOS Memory (Cascadable) DISTINCTIVE CHARACTERISTICS • Zero standby power ■ High-speed 15 MHz shift-in/shlft-out rates ■ Very low active power consumption ■ TTL-compatible Inputs and outputs
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OCR Scan
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67C4033
67C4033
10684B-20
192x15
10684B-21
10684B-22
67c4033-15n
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Untitled
Abstract: No abstract text available
Text: in te i’ 51C256HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 256K X 1 CHMOS DYNAMIC RAM 51C256HL-15 51C256HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHtyOS Standby Current (mA) 0.1 0.1 Ripplemode Operation
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51C256HL
51C256HL-15
51C256HL-20
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Untitled
Abstract: No abstract text available
Text: HB56UW1672EJN-5/6 128MB Unbuffered EDO DRAM DIMM 16-Mword X 72-bit, 8k Refresh, 1 Bank Module 18 pcs of 16M X 4 components HITACHI ADE-203-902A (Z) Rev. 1.0 Mar. 25, 1998 Description The HB56UW1672EJN belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been
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HB56UW1672EJN-5/6
128MB
16-Mword
72-bit,
ADE-203-902A
HB56UW1672EJN
64-Mbit
HM5164405)
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PDF
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Untitled
Abstract: No abstract text available
Text: AP* X3 IW Preliminary Data Sheet March 1993 A A f e T Microelectronics DSP1610 Signal Coding Digital Signal Processor 1.0 Features 2.0 Description • 25 ns or 33 ns instruction cycle ■ 512 word boot ROM, and 4 Kword or 8 Kword downloadable dual-port RAM on-chip
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OCR Scan
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DSP1610
16-bit,
132-pin
S90-137D
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0927H
Abstract: D015 P1480 SS22 0504H p1480-12cgdpas Priority Encoder CAM P1480-12CG 016Fh 0507H
Text: G E C W L P L E S S E Y S e p te m b e r 1995 PRELIMINARY INFORMATION S E M I C O N D U C T O R S D S 3112-2.0 P1480 LAN CAM 1kx64-BIT CMOS CONTENT-ADDRESSABLE MEMORY Supersedes February 1992 edition - version 1 The P1480 LAN CAM is a 1K X 64-bit fixed-width CMOS
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P1480
DS3112-2
1kx64-BIT
P1480
64-bit
64-bits
0DE54Q2
5C226
0927H
D015
SS22
0504H
p1480-12cgdpas
Priority Encoder CAM
P1480-12CG
016Fh
0507H
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PDF
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Untitled
Abstract: No abstract text available
Text: bM27S25 004203b ^70 A T A SHEET EC MOS INTEGRATED CIRCUIT /¿PD42S4190, 424190 4 M-BIT DYNAMIC RAM 256K-WORD BY 18-BIT, FAST PAGE MODE, BYTE WRITE MODE DESCRIPTION The //PD42S4190, 424190 are 262 144 w ords by 18 bits dynamic CMOS RAMs. The fast page m ode and byte
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bM27S25
004203b
PD42S4190,
256K-WORD
18-BIT,
//PD42S4190,
PD42S4190
44-pin
40-pin
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STA 518A
Abstract: No abstract text available
Text: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA Product Preview MCM67B518A 32K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write T h e M C M 67B 518A is a 589,824 bit synchronous fa st static random a ccess m e m ory designed to provide a burstable, h ig h -p erform a n ce, secondary cache
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MCM67B518A
i486TM
applicationsB518A
MCM678518AFN9
-------------67B
MCM67B518AFNB
MCM67B518AFN9
MCM67B518AZP8
MCM67B518AZP9
MCM67B518AFN10
STA 518A
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A13 K
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6294 16K x 4 Bit Synchronous S tatic RAM with Output Registers and Output Enable T h e M C M 6 2 9 4 is a 6 5 ,5 3 6 b it s y n c h ro n o u s sta tic ra n d o m access m e m o ry o rg a n ized as P P ACKA G E 300 M IL P L A S T IC
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MCM6294
MCM6294
6294P25
6294P30
6294J20
6294J25
6294J30
6294J20R
6294J25R
6294J30R
A13 K
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PDF
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MCM62486
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM62486A 32K x 9 Bit BurstRAM Synchronous Static RAM With Burst Counter and Self-Timed Write The MCM62486A is a 294,912 bit synchronous sialic random access memory designed to provide a burstable, high-performance, secondary cache for the
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MCM62486A
MCM62486A
2486A
MCM62486AFN14
MCM62466AFN19
MCM62486FN24
MCM62486
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Untitled
Abstract: No abstract text available
Text: HM538253B Series HM538254B Series 262,144-word x 8-bit Multiport CMOS Video RAM HITACHI Description The HM538253B/HM538254B is a 2-Mbit multiport video RAM equipped with a 256-kword x 8-bit dynamic RAM and a 512-word x 8-bit SAM full-sized SAM . Its RAM and SAM operate independently and
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HM538253B
HM538254B
144-word
HM538253B/HM538254B
256-kword
512-word
HM534253B/HM538123B
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PDF
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Untitled
Abstract: No abstract text available
Text: A M D ii ADVANCE INFORMATION Am30LV0064D 64 Megabit 8 M x 8-Bit CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology DISTINCTIVE CHARACTERISTICS • Single pow er supply operation ■ — Separate VCCQ for 5 volt I/O tolerance ■ ■ Autom ated Program and Erase
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Am30LV0064D
FBE040
30LV0064D
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PDF
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Untitled
Abstract: No abstract text available
Text: int ! 51C256L LOW POWER 256K X 1 CHMOS DYNAMIC RAM 51C256L-15 51C25Ì6L-20 Maximum Access Time ns 150 200 Maximum CHMOS Standby Current (mA) 0.1 0.1 • Low Power Data Retention ■ TTL and HCT Compatible — Standby current, CHMOS — 100 jxA (max.) — Refresh period, RAS-Only — 32 ms (max)
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51C256L
51C256L-15
51C25Ã
6L-20
51C256L
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM93CS56/KM93CS66 CMOS EEPROM 2K /4 K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Single 5 volt supply • Write protection with memory pointer • Low power consumption — Active: 3 mA TTL — Standby: 100 pA (TTL)
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KM93CS56/KM93CS66
KM93CS66
KM93CS56
KM93CS56/66
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PDF
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ET-102
Abstract: No abstract text available
Text: A M D ii ADVANCE INFORMATION Am30LV0064D 64 Megabit 8 M x 8-Bit CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology DISTINCTIVE CHARACTERISTICS • Single pow er supply operation ■ — Separate VCCQ for 5 volt I/O tolerance ■ ■ Autom ated Program and Erase
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Am30LV0064D
FBE040
30LV0064D
ET-102
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PDF
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MTA02
Abstract: i860Xp MT 8222 Intel 82495 Cache Controller 3ce-14 LR1 D09 ahy 103 i860 64-Bit Microprocessor Performance Brief MCache Second Level Cache-Controller
Text: in t e ! 82495XP CACHE CONTROLLER/ 82490XP CACHE RAM Two-Way, Set Associative, Secondary Cache for i860 XP Microprocessor 50 MHz “No Glue” Interface with CPU Configurable — Cache Size 256 or 512 Kbytes — Line Width 32, 64 or 128 Bytes — Memory Bus Width 64 or 128 Bits
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82495XP
82490XP
Controller/82490XP
MTA02
i860Xp
MT 8222
Intel 82495 Cache Controller
3ce-14
LR1 D09
ahy 103
i860 64-Bit Microprocessor Performance Brief
MCache
Second Level Cache-Controller
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PDF
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UPD424170
Abstract: No abstract text available
Text: [^^1 4 5 7 5 5 5 INECE A T A SH EET 00^1715 MOS INTEGRATED CIRCUIT ¿¿PD42S4170L, 424170L 4 M-BIT DYNAMIC RAM 256K-WORD BY 16-BIT, FAST PAGE MODE, BYTE WRITE MODE DESCRIPTION The //PD42S4170L, 424170L are 262 144 words by 16 bits dynamic CMOS RAMs w ith optional fast page mode
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PD42S4170L,
256K-WORD
16-BIT,
//PD42S4170L,
424170L
/PD42S4170L.
PD42S4170L
PD424170L
44-pin
40-pin
UPD424170
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