500W TRANSISTOR
Abstract: hvvi
Text: HVV1011-500L Product Overview L-Band High Power Pulsed Transistor 32us on/18us off x 48, LTDC 6.4% For L-band Radar Applications DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating
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HVV1011-500L
on/18us
HVV1011-500L
EG-01-PO17X1
500W TRANSISTOR
hvvi
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CHA5012
Abstract: No abstract text available
Text: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through
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CHA5012
CHA5012
DSCHA50126286
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99-F
Abstract: CHA5012-99F CHA5012
Text: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through
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CHA5012
CHA5012
DSCHA50126286
99-F
CHA5012-99F
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CHA7010
Abstract: x-Band High Power Amplifier
Text: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP
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CHA7010
CHA7010
DSCHA70104054
x-Band High Power Amplifier
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x-Band High Power Amplifier
Abstract: 10Ghz RF Power 10w amplifier CHA7010
Text: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP
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CHA7010
CHA7010
DSCHA70104054
x-Band High Power Amplifier
10Ghz RF Power 10w amplifier
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CHA5012
Abstract: No abstract text available
Text: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description Main Features The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through
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CHA5012
CHA5012
DSCHA50126066
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AN0020
Abstract: CHA5014 9v23
Text: CHA5014 RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to
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CHA5014
CHA5014
30dBm
DSCHA50140112
AN0020
9v23
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x-Band High Power Amplifier
Abstract: CHA7012
Text: CHA7012 X-band HBT High Power Amplifier GaAs Monolithic Microwave IC Description TI Vc The CHA7012 chip is a monolithic twostage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through
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CHA7012
CHA7012
DSCHA70127235
x-Band High Power Amplifier
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CHA5014
Abstract: No abstract text available
Text: CHA5014 RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to
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CHA5014
CHA5014
30dBm
DSCHA50149090-31
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CHA7010
Abstract: x-Band High Power Amplifier x band Gaas Power Amplifier 10W
Text: CHA7010 X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through
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CHA7010
CHA7010
DSCHA70102175
-24-June-02
x-Band High Power Amplifier
x band Gaas Power Amplifier 10W
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Untitled
Abstract: No abstract text available
Text: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including via holes through the substrate and air bridges. A nitride
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CHA5012
CHA5012
DSCHA50120179
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CHA5012
Abstract: No abstract text available
Text: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including via holes through the substrate and air bridges. A nitride
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CHA5012
CHA5012
DSCHA50120179
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Untitled
Abstract: No abstract text available
Text: CHA5014-99F RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to
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CHA5014-99F
CHA5014
30dBm
DSCHA50141097
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x-Band High Power Amplifier
Abstract: 6 ghz amplifier 10w United Monolithic Semiconductors x-band power transistor 4GHz RF power transistors with s-parameters CHA7010
Text: CHA7010 X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through
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CHA7010
CHA7010
DSCHA70103135
x-Band High Power Amplifier
6 ghz amplifier 10w
United Monolithic Semiconductors
x-band power transistor
4GHz RF power transistors with s-parameters
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NE3517S03-A
Abstract: NE3517S03-T1C NE3517S03 HS350
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS
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NE3517S03
NE3517S03-T1C
NE3517S03-T1D
NE3517S03-T1C-A
NE3517S03-T1D-A
NE3517S03-A
PG10787EJ01V0DS
NE3517S03-A
NE3517S03
HS350
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NE3517S03
Abstract: rt/duroid 5880 RT DUROID 5880 NE3517S03-A marking t1c rogers 5880 HS350 NE3517S03-T1D-A NE3517S03-T1C rt duroid
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS
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NE3517S03
NE3517S03-T1C
NE3517S03-T1C-A
NE3517S03-T1D
NE3517S03-T1D-A
NE3517S03
rt/duroid 5880
RT DUROID 5880
NE3517S03-A
marking t1c
rogers 5880
HS350
NE3517S03-T1D-A
NE3517S03-T1C
rt duroid
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C0805C225K9RACTU
Abstract: ECJ-1VB1H103K PCC1784CT-ND R04003
Text: HELP3TM Tri-band USCellular/Japan Cellular/IMT UMTS/WCDMA Power Amplifier Module Application Note HELP3TM Tri-band WCDMA Power Amplifier Module Rev 2 Relevant products • AWT6222 General Description This ANADIGICS 3 mm x 5 mm hetero-junction bipolar transistor HBT power amplifier module is designed
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AWT6222
C0805C225K9RACTU
ECJ-1VB1H103K
PCC1784CT-ND
R04003
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mesfet lnb
Abstract: NE72118 NE72118-T1 NE72118-T2 13000 transistor
Text: PRELIMINARY DATA SHEET C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET FEATURES NE72118 PACKAGE DIMENSIONS Units in mm • HIGH POWER GAIN: Gs = 5.5 dB TYP at f = 12 GHz • GATE LENGTH: Lg = 0.8 µm (recessed gate) 2.1 ± 0.2 • GATE WIDTH: Wg = 330 µm
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NE72118
NE72118
24-Hour
mesfet lnb
NE72118-T1
NE72118-T2
13000 transistor
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SKY7755
Abstract: SKY77558
Text: SKYWORKS' PRODUCT SUMMARY SKY77558 T x-R x FEM for Quad-Band GSM / GPRS / ED G E 6-Band Antenna Switch Support Applications Description • Quad-band cellular handsets SKY77558 is a transm it and receive Front End Module FEM designed in a very low profile
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SKY77558
GSM850/900
DCS1800
PCS1900
GSM850/900,
DCS1800,
01800A
SKY7755
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SKY77570
Abstract: No abstract text available
Text: SKYWORKS' PRODUCT SUMMARY S K Y 775 70 T x-R x FEM for Quad-Band GSM / GPRS / ED G E 6-Band Antenna Switch Support Applications Description • Quad-band cellular handsets SKY77570 is a transm it and receive Front End Module FEM designed in a very low profile
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GSM850/900
DCS1800
PCS1900
DCS1800/PCS1900
SKY77570
GSM850/900,
DCS1800,
01812A
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xr1094
Abstract: FIVE band graphic equalizer 261G6 capacitor 106 16K XR1094CP gph-17 xr-1094
Text: XR-1094 X 'E X A R Advanced Information Five Band Graphic Equalizer Filter and Display Driver PIN ASSIGNMENT GENERAL INFORMATION A1 The XR-1094 is a single chip graphic equalizer and display driver containing switched-capacitor band pass filters, filter multiplexer, data latches and high
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XR-1094
XR-1094
16kHz.
10kHz
16kHz
fr60i
xr1094
FIVE band graphic equalizer
261G6
capacitor 106 16K
XR1094CP
gph-17
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ma4e12
Abstract: No abstract text available
Text: an A M P com pany Surface Mount Low Barrier X-Band Schottky Diodes MA4E1245 Series V3.00 SOT-23 Features • Designed for High Volume Low Cost Detector and Mixer Applications • Low Noise Figure: 5.7 dB SSB at X-Band • High Detector Sensitivity: -55 dBm TSS
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MA4E1245
OT-23
ma4e12
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SG 2368
Abstract: sg 2534 DELTA 0431 180/TTK SG 2368
Text: PRELIMINARY DATA SHEET C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET FEATURES NE72118 PACKAGE DIMENSIONS Units in mm • HIGH POWER GAIN: Gs = 5.5 dB TYP at f = 12 GHz • GATE LENGTH: Lg = 0.8 • GATE WIDTH: Wg = 330 jim • 4 PINS SUPER MINI MOLD
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NE72118
NE72118
24-Hour
SG 2368
sg 2534
DELTA 0431
180/TTK SG 2368
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MA4E1245
Abstract: S11 SCHOTTKY diode
Text: M MôM m an A M P com pany Surface Mount Low Barrier X-Band Schottky Diodes MA4E1245 Series V3.00 SOT-23 Features • D esigned for High Volume Low Cost Detector and Mixer Applications • Low Noise Figure: 5.7 dB SSB at X-Band • High Detector Sensitivity: -55 dBm TSS
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MA4E1245
OT-23
S11 SCHOTTKY diode
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