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    CHA7010 Search Results

    CHA7010 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CHA7010 United Monolithic Semiconductors X-band GaInP HBT High Power Amplifier Original PDF
    CHA7010 United Monolithic Semiconductors X-band GaInP HBT High Power Amplifier Original PDF
    CHA7010 United Monolithic Semiconductors X-band GaInP HBT High Power Amplifier Original PDF
    CHA7010-99F/00 United Monolithic Semiconductors X-band GaInP HBT high power amplifier. Original PDF
    CHA7010-99F/00 United Monolithic Semiconductors X-band GaInP HBT High Power Amplifier Original PDF

    CHA7010 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    x-Band High Power Amplifier

    Abstract: 6 ghz amplifier 10w United Monolithic Semiconductors x-band power transistor 4GHz RF power transistors with s-parameters CHA7010
    Text: CHA7010 X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through


    Original
    PDF CHA7010 CHA7010 DSCHA70103135 x-Band High Power Amplifier 6 ghz amplifier 10w United Monolithic Semiconductors x-band power transistor 4GHz RF power transistors with s-parameters

    CHA7010

    Abstract: x-Band High Power Amplifier
    Text: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP


    Original
    PDF CHA7010 CHA7010 DSCHA70104054 x-Band High Power Amplifier

    x-Band High Power Amplifier

    Abstract: 10Ghz RF Power 10w amplifier CHA7010
    Text: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP


    Original
    PDF CHA7010 CHA7010 DSCHA70104054 x-Band High Power Amplifier 10Ghz RF Power 10w amplifier

    CHA7010

    Abstract: x-Band High Power Amplifier x band Gaas Power Amplifier 10W
    Text: CHA7010 X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through


    Original
    PDF CHA7010 CHA7010 DSCHA70102175 -24-June-02 x-Band High Power Amplifier x band Gaas Power Amplifier 10W

    Untitled

    Abstract: No abstract text available
    Text: CHA7010 PRELIMINARY INFORMATION 5. 0 - 6 . 0 G H z P O W E R A M P L I F I E R G a A s M O N O L I T H I C M I C R O W A V E IC FEATURES 7W output power at 3dB gain compression 5W output power at 1dB gain compression 18dB small signal gain 25% power added efficiency


    OCR Scan
    PDF CHA7010 CHA7010-E3A/00 CHA6009 24dBm 26dBm

    AH512

    Abstract: AH513 AH514 ah503 AH370 AH681 AH610 ah496 AH-512 AH374
    Text: A LP H A N U ME RI CA L PRODUCT INDEX P/N ADC20010 Page P/N Page P/N Page 259 AH228 35 AH458 AFC378 55 AH229 35 AH479 17 AFC500 AH 152 43 35 35 AH480 17 29 AH230 AH232 AH 153 29 AH 154 35 35 AH155 29 29 AH233 AH234 AH235 35 AH156 29 35 AH157 29 AH236 AH237


    OCR Scan
    PDF ADC20010 AFC378 AFC500 AH155 AH156 AH157 AH161 AH162 AH163 AH164 AH512 AH513 AH514 ah503 AH370 AH681 AH610 ah496 AH-512 AH374

    u 233 7011

    Abstract: HA2001
    Text: MMICs INDEX POWER AM PLIFIERS ♦ CHA1027 - 4 .5 -6.0G H z POWER AMPLIFIER. 133 NEW ♦C H A 5 0 0 5 - 4.5 - 6.5GHz POWER DRIVER AMPLIFIER. 139 NEW ♦C H A 6 0 0 9 - 5.0 - 6.0GHz POWER


    OCR Scan
    PDF CHA1027 CHA7010 CHA1051 18GHz CHA1074 2-18GHZ CHS5039 CHS5041 CHS5042 CHS5043 u 233 7011 HA2001