94GHz amplifier
Abstract: CHA7012
Text: CHA7012 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC Description TI Vc Main Features Frequency band: 9.2 -10.4GHz Output power P3dB : 38.5dBm High linear gain: > 20dB High PAE: > 38% Two biasing modes: -VDigital control thanks to TTL interface
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CHA7012
CHA7012
DSCHA70129082-
94GHz amplifier
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x-Band High Power Amplifier
Abstract: CHA7012
Text: CHA7012 X-band HBT High Power Amplifier GaAs Monolithic Microwave IC Description TI Vc The CHA7012 chip is a monolithic twostage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through
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CHA7012
CHA7012
DSCHA70127235
x-Band High Power Amplifier
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Untitled
Abstract: No abstract text available
Text: CHA7012 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC Description TI Vc Main Features 1 1 1 1 1 1 Frequency band: 9.2 -10.4GHz Output power P3dB : 38.5dBm High linear gain: > 20dB High PAE: > 38% Two biasing modes: -VDigital control thanks to TTL interface
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CHA7012
CHA7012
DSCHA70129082-
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CHA2066-99S
Abstract: No abstract text available
Text: UMS UNIQUE SPACE SOLUTION A complete selection of catalogue Class S products For many years, UMS has served the needs of the international space community by offering an extensive selection of space evaluated processes: • Low Noise PHEMT PH25, PH15 • Power MESFET (HP07)
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PPH25X,
PPH15,
HB20S,
HB20P)
HB20M)
MIL-PRF-38534.
CND2047
CHS5100
CHP6013
CHX2089
CHA2066-99S
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PPH25X
Abstract: No abstract text available
Text: Contents Products . 3 Foundry open processes. 12 GaN current packaging solutions and demo boards. 14
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