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    X BAND GAAS POWER AMPLIFIER 10W Search Results

    X BAND GAAS POWER AMPLIFIER 10W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    X BAND GAAS POWER AMPLIFIER 10W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RF Power Amplifier 125KHz

    Abstract: RFHA5966AX 4500m 1n4148 die GAAS FET AMPLIFIER x-band 10w RFHA5966A x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm
    Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF


    Original     		PDF RFHA5966AX RFHA5966A 4500m 4000m 41dBm RFHA5966A 1N4148, RF Power Amplifier 125KHz 1n4148 die GAAS FET AMPLIFIER x-band 10w x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm

    MMIC X-band amplifier

    Abstract: No abstract text available
    Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF


    Original     		PDF RFHA5966A RFHA5966AX 41dBm RFHA5966A Radar023 1N4148, DS111023 MMIC X-band amplifier

    CHA7010

    Abstract: x-Band High Power Amplifier
    Text: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP


    Original     		PDF CHA7010 CHA7010 DSCHA70104054 x-Band High Power Amplifier

    x-Band High Power Amplifier

    Abstract: 10Ghz RF Power 10w amplifier CHA7010
    Text: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP


    Original     		PDF CHA7010 CHA7010 DSCHA70104054 x-Band High Power Amplifier 10Ghz RF Power 10w amplifier

    CHA7010

    Abstract: x-Band High Power Amplifier x band Gaas Power Amplifier 10W
    Text: CHA7010 X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through


    Original     		PDF CHA7010 CHA7010 DSCHA70102175 -24-June-02 x-Band High Power Amplifier x band Gaas Power Amplifier 10W

    x-Band High Power Amplifier

    Abstract: 6 ghz amplifier 10w United Monolithic Semiconductors x-band power transistor 4GHz RF power transistors with s-parameters CHA7010
    Text: CHA7010 X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through


    Original     		PDF CHA7010 CHA7010 DSCHA70103135 x-Band High Power Amplifier 6 ghz amplifier 10w United Monolithic Semiconductors x-band power transistor 4GHz RF power transistors with s-parameters

    FMA3012

    Abstract: 22-A114 x-Band High Power Amplifier x-band mmic
    Text: FMA3012 X-BAND 10W HIGH POWER AMPLIFIER GAAS MMIC FUNCTIONAL SCHEMATIC: FEATURES: • • • Advance Product Information v0.1 16.5dB Gain 10W Saturated Output Power at 9V pHEMT Technology VD1 GENERAL DESCRIPTION VD2 RF Input The FMA3012 is a high performance X-Band


    Original     		PDF FMA3012 FMA3012 22-A114. MIL-STD-1686 MILHDBK-263. 22-A114 x-Band High Power Amplifier x-band mmic

    mmic AMPLIFIER x-band 10w

    Abstract: P1006-FA power transistor mimix x-band XP1006-FA-0N00 x-band power amplifier I0004966
    Text: 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin September 2008 - Rev 10-Sep-08 P1006-FA Features X-Band 10W Power Amplifier Flange Package 21.5 dB Large Signal Gain +40.5 dBm Saturated Output Power 37% Power Added Efficiency 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 10-Sep-08 P1006-FA XP1006-FA-0N00 XP1006-FA-EV1 XP1006-FA mmic AMPLIFIER x-band 10w power transistor mimix x-band x-band power amplifier I0004966

    P1006BD

    Abstract: P1006-BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 11-Nov-08 P1006-BD MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-EV1 P1006BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia

    tanaka gold wire

    Abstract: MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier March 2006 - Rev 13-Mar-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 13-Mar-06 P1006 MIL-STD-883 XP1006 tanaka gold wire MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip

    p1006-fa

    Abstract: XP1006-FA MMIC X-band amplifier P1006 XP1006-FA-0N00 mmic AMPLIFIER x-band 10w XP1006-FA-EV1
    Text: 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin August 2006 - Rev 16-Aug-06 P1006-FA Features X-Band 10W Power Amplifier Flange Package 21.5 dB Large Signal Gain +40.5 dBm Saturated Output Power 37% Power Added Efficiency 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 16-Aug-06 P1006-FA XP1006-FA-0N00 XP1006-FA-EV1 XP1006-FA p1006-fa MMIC X-band amplifier P1006 XP1006-FA-0N00 mmic AMPLIFIER x-band 10w XP1006-FA-EV1

    GAAS FET AMPLIFIER x-band 10w

    Abstract: XP1006-BD XP1006-BD-EV1 P1006BD MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006-BD-000V
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier August 2007 - Rev 03-Aug-07 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 03-Aug-07 P1006-BD MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-EV1 XP1006 GAAS FET AMPLIFIER x-band 10w XP1006-BD XP1006-BD-EV1 P1006BD MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006-BD-000V

    P1006

    Abstract: GAAS FET AMPLIFIER x-band 10w XP1006 bonding XP1006 XP1006-BD
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 01-Nov-06 P1006 MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-000W XP1006-BD-EV1 GAAS FET AMPLIFIER x-band 10w XP1006 bonding XP1006-BD

    Untitled

    Abstract: No abstract text available
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 01-Nov-06 P1006 MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-000W XP1006-BD-EV1 XP1006

    power transistor gaas x-band

    Abstract: mmic AMPLIFIER x-band 10w
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier June 2005 - Rev 05-Jun-05 P1006 Features Chip Device Layout X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 05-Jun-05 P1006 MIL-STD-883 XP1006 power transistor gaas x-band mmic AMPLIFIER x-band 10w

    XP1007

    Abstract: power transistor mimix x-band x-band power transistor power transistor gaas x-band
    Text: 8.7-10.7 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1007 Features Chip Device Layout X-Band 10W Power Amplifier 18.0 dB Small Signal Gain +40.0 dBm Saturated Output Power 32% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 05-May-05 P1007 MIL-STD-883 XP1007 power transistor mimix x-band x-band power transistor power transistor gaas x-band

    MMIC X-band amplifier

    Abstract: mmic AMPLIFIER x-band 10w x-band power amplifier 6 ghz amplifier 10w MA08509D x-band mmic Gaas Power Amplifier 10W x-Band High Power Amplifier 10W Power Amplifier
    Text: V 1.00 MA08509D 10W X-Band Power Amplifier 8.0 –11.0 GHz Features E E E E 8.0-11.0 GHz GaAs MMIC Amplifier 8.0 to 11.0 GHz Operation 10 Watt CW Saturated Output Power Level Variable Drain Voltage 8-10V Operation Self-Aligned MSAG MESFET Process Primary Applications


    Original     		PDF MA08509D MA08509D MMIC X-band amplifier mmic AMPLIFIER x-band 10w x-band power amplifier 6 ghz amplifier 10w x-band mmic Gaas Power Amplifier 10W x-Band High Power Amplifier 10W Power Amplifier

    x-band mmic

    Abstract: mmic AMPLIFIER x-band 10w x-band power amplifier
    Text: RO-P-DS-3006 - A- MA08509D 10W X-Band Power Amplifier 8.0 –11.0 GHz Features ♦ ♦ ♦ ♦ 8.0-11.0 GHz GaAs MMIC Amplifier 8.0 to 11.0 GHz Operation 10 Watt CW Saturated Output Power Level Variable Drain Voltage 8-10V Operation Self-Aligned MSAG MESFET Process


    Original     		PDF RO-P-DS-3006 MA08509D MA08509D x-band mmic mmic AMPLIFIER x-band 10w x-band power amplifier

    XP1006-FA-0N00

    Abstract: mmic AMPLIFIER x-band 10w MMIC X-band amplifier XP1006-FA
    Text: XP1006-FA 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin Rev 01-Sep-10 RoHS Compliant Features • • • • • • X-Band 10W Power Amplifier Flange Package 21 dB Large Signal Gain +40 dBm Saturated Output Power 30% Power Added Efficiency 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF XP1006-FA 01-Sep-10 XP1006-FA-0N00 mmic AMPLIFIER x-band 10w MMIC X-band amplifier XP1006-FA

    XP1006-BD

    Abstract: XP1006 X-band GaAs pHEMT MMIC Chip GAAS FET AMPLIFIER x-band 10w Chip Advanced Tech
    Text: XP1006-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Rev 01-Sep-10 Features Chip Device Layout • X-Band 10W Power Amplifier • 21.0 dB Large Signal Gain • +40.0 dBm Saturated Output Power • 30% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF XP1006-BD MIL-STD-883 01-Sep-10 XP1006 XP1006-BD X-band GaAs pHEMT MMIC Chip GAAS FET AMPLIFIER x-band 10w Chip Advanced Tech

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


    Original     		PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L

    FMCW Radar

    Abstract: radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"
    Text: INFINEON TECHNOLOGIES AG’S SALES OFFICES WORLDWIDE – P A R T LY R E P R E S E N T E D B Y S I E M E N S A G AUS Siemens Ltd. 885 Mountain Highway Bayswater, Victoria 3153 T +61 3-97 21 2 1 11 Fax (+61) 3-97 21 72 75 BR Infineon Technologies South America Ltda.


    Original     		PDF 3800-Pirituba E-28760 DK-2750 FMCW Radar radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"

    Untitled

    Abstract: No abstract text available
    Text: ^24^02^ 0 Q 1 7 lì 7 b MITSUBISHI SEMICONDUCTOR <GaAs FET> 7Ô3 MGFC40V5258 5.2 ~ 5 .8 G H z BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 4 0 V 5 2 5 8 is an internally im p edan ce-m atch ed G aA s power F E T especially designed for use in 5 . 2 - 5 . 8


    OCR Scan     		PDF MGFC40V5258

    mitsubishi f

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V7785A 7.7~8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed "for use in 7.7~8.5GHz band amplifiers. The hermetically sealed


    OCR Scan     		PDF MGFC36V7785A MGFC36V7785A --51D 45dBc Item-01 Item-51 mitsubishi f