Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    XP1006 Search Results

    SF Impression Pixel

    XP1006 Price and Stock

    Panasonic Electronic Components ARXP1006

    RELAY RF SPDT 500MA 6V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ARXP1006 Box
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Lovato Electric Inc EXP1006

    Expansion Module EXP Series, 2 Relay Outputs To Increase Number Of Steps | LOVATO Electric EXP1006
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS EXP1006 Bulk 1
    • 1 $246.35
    • 10 $229.1
    • 100 $221.71
    • 1000 $221.71
    • 10000 $221.71
    		Get Quote
    TME EXP1006 1
    • 1 $50.18
    • 10 $46.83
    • 100 $46.83
    • 1000 $46.83
    • 10000 $46.83
    		Get Quote

    XP1006 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    XP1006 Mimix Broadband 8.5-11.0 GHz GaAs MMIC Power Amplifier Original PDF
    XP1006-BD Mimix Broadband 8.5-11.0 GHz GaAs MMIC Power Amplifier Original PDF
    XP1006-BD-000V Mimix Broadband 8.5-11.0 GHz GaAs MMIC Power Amplifier Original PDF
    XP1006-BD-EV1 Mimix Broadband 8.5-11.0 GHz GaAs MMIC Power Amplifier Original PDF
    XP1006-FA Mimix Broadband 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin Original PDF
    XP1006-FA-0N00 Mimix Broadband 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin Original PDF
    XP1006-FA-EV1 Mimix Broadband 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin Original PDF

    XP1006 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    XP1006-BD

    Abstract: XP1006 X-band GaAs pHEMT MMIC Chip GAAS FET AMPLIFIER x-band 10w Chip Advanced Tech
    Text: XP1006-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Rev 01-Sep-10 Features Chip Device Layout • X-Band 10W Power Amplifier • 21.0 dB Large Signal Gain • +40.0 dBm Saturated Output Power • 30% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF XP1006-BD MIL-STD-883 01-Sep-10 XP1006 XP1006-BD X-band GaAs pHEMT MMIC Chip GAAS FET AMPLIFIER x-band 10w Chip Advanced Tech

    P1014

    Abstract: xp1014 84-1LMI XP1006 bonding GHz HPA
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 April 2006 - Rev 14-Apr-06 Features XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit


    Original     		PDF APH478 P1014 14-Apr-06 XP1006/7 MIL-STD-883 XP1014 I0005129 P1014 xp1014 84-1LMI XP1006 bonding GHz HPA

    p1014

    Abstract: No abstract text available
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 November 2006 - Rev 01-Nov-06 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit


    Original     		PDF 01-Nov-06 APH478 P1014 XP1014 I0005129 XP1006 MIL-STD-883 XP1014-BD-000W XP1014-BD-000V XP1014-BD-EV1

    Chip Advanced Tech

    Abstract: XP1006 XP1006 bonding
    Text: XP1014-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Features • XP1006 Driver Amplifier • 18.0 dB Small Signal Gain • +31.0 dBm Saturated Output Power • 35% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF XP1014-BD XP1006 MIL-STD-883 01-Sep-10 XP1014 I0005129 Chip Advanced Tech XP1006 bonding

    P1014

    Abstract: DM6030HK TS3332LD XP1006 XP1014 XP1014-BD-000V XP1006 bonding
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier s 18 P1014-BD August 2007 - Rev 03-Aug-07 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF P1014-BD 03-Aug-07 XP1006 MIL-STD-883 XP1014 I0005129 XP1014-BD-000V XP1014-BD-EV1 XP1014 P1014 DM6030HK TS3332LD XP1014-BD-000V XP1006 bonding

    XP1006-FA-0N00

    Abstract: mmic AMPLIFIER x-band 10w MMIC X-band amplifier XP1006-FA
    Text: XP1006-FA 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin Rev 01-Sep-10 RoHS Compliant Features • • • • • • X-Band 10W Power Amplifier Flange Package 21 dB Large Signal Gain +40 dBm Saturated Output Power 30% Power Added Efficiency 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF XP1006-FA 01-Sep-10 XP1006-FA-0N00 mmic AMPLIFIER x-band 10w MMIC X-band amplifier XP1006-FA

    Untitled

    Abstract: No abstract text available
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 November 2006 - Rev 01-Nov-06 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit


    Original     		PDF APH478 P1014 01-Nov-06 XP1006 MIL-STD-883 XP1014 I0005129 XP1014-BD-000W XP1014-BD-000V XP1014-BD-EV1

    Untitled

    Abstract: No abstract text available
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 May 2005 - Rev 05-May-05 Features Chip Device Layout XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit


    Original     		PDF APH478 P1014 05-May-05 XP1006/7 MIL-STD-883 XP1014 I0004966

    xp1014

    Abstract: P1014-BD
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier s 18 P1014-BD November 2008 - Rev 14-Nov-08 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 14-Nov-08 P1014-BD XP1014 I0005129 XP1006 MIL-STD-883 XP1014-BD-000V XP1014-BD-EV1

    Untitled

    Abstract: No abstract text available
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 August 2005 - Rev 03-Aug-05 Features Chip Device Layout XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency


    Original     		PDF 03-Aug-05 APH478 P1014 XP1014 I0005129 XP1006/7 MIL-STD-883

    P1006BD

    Abstract: P1006-BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 11-Nov-08 P1006-BD MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-EV1 P1006BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia

    tanaka gold wire

    Abstract: MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier March 2006 - Rev 13-Mar-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 13-Mar-06 P1006 MIL-STD-883 XP1006 tanaka gold wire MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip

    power transistor gaas x-band

    Abstract: mmic AMPLIFIER x-band 10w
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier June 2005 - Rev 05-Jun-05 P1006 Features Chip Device Layout X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 05-Jun-05 P1006 MIL-STD-883 XP1006 power transistor gaas x-band mmic AMPLIFIER x-band 10w

    mmic AMPLIFIER x-band 10w

    Abstract: P1006-FA power transistor mimix x-band XP1006-FA-0N00 x-band power amplifier I0004966
    Text: 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin September 2008 - Rev 10-Sep-08 P1006-FA Features X-Band 10W Power Amplifier Flange Package 21.5 dB Large Signal Gain +40.5 dBm Saturated Output Power 37% Power Added Efficiency 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 10-Sep-08 P1006-FA XP1006-FA-0N00 XP1006-FA-EV1 XP1006-FA mmic AMPLIFIER x-band 10w power transistor mimix x-band x-band power amplifier I0004966

    P1006

    Abstract: GAAS FET AMPLIFIER x-band 10w XP1006 bonding XP1006 XP1006-BD
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 01-Nov-06 P1006 MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-000W XP1006-BD-EV1 GAAS FET AMPLIFIER x-band 10w XP1006 bonding XP1006-BD

    Untitled

    Abstract: No abstract text available
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 01-Nov-06 P1006 MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-000W XP1006-BD-EV1 XP1006

    p1006-fa

    Abstract: XP1006-FA MMIC X-band amplifier P1006 XP1006-FA-0N00 mmic AMPLIFIER x-band 10w XP1006-FA-EV1
    Text: 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin August 2006 - Rev 16-Aug-06 P1006-FA Features X-Band 10W Power Amplifier Flange Package 21.5 dB Large Signal Gain +40.5 dBm Saturated Output Power 37% Power Added Efficiency 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 16-Aug-06 P1006-FA XP1006-FA-0N00 XP1006-FA-EV1 XP1006-FA p1006-fa MMIC X-band amplifier P1006 XP1006-FA-0N00 mmic AMPLIFIER x-band 10w XP1006-FA-EV1

    GAAS FET AMPLIFIER x-band 10w

    Abstract: XP1006-BD XP1006-BD-EV1 P1006BD MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006-BD-000V
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier August 2007 - Rev 03-Aug-07 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 03-Aug-07 P1006-BD MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-EV1 XP1006 GAAS FET AMPLIFIER x-band 10w XP1006-BD XP1006-BD-EV1 P1006BD MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006-BD-000V