transistor yk
Abstract: FZ1800R12HP4_B9 2sd88
Text: Technische Information / technical information FZ1800R12HP4_B9 IGBT-Module IGBT-modules IHM-B Modul mit soft schaltendem Trench-IGBT4 IHM-B module with soft-switching Trench-IGBT4 Vorläufige Daten / preliminary data +,-. / ! + , 012 / ! 3 4 ,56 / $ Typische Anwendungen
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FZ1800R12HP4
transistor yk
FZ1800R12HP4_B9
2sd88
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PD48
Abstract: uPD481850GF-A12-JBT
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD481850 8M-bit Synchronous GRAM Description The µPD481850 is a synchronous graphics memory SGRAM organized as 128 K words x 32 bits × 2 banks random access port. This device can operate up to 100 MHz by using synchronous interface. Also, it has 8-column Block Write
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PD481850
PD481850
100-pin
PD48
uPD481850GF-A12-JBT
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uPD481850
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD481850 8 M-bit Synchronous GRAM for Rev.L Description The µPD481850 is a synchronous graphics memory SGRAM organized as 131,072 words x 32 bits × 2 banks random access port. This device can operate up to 100 MHz by using synchronous interface. Also, it has 8-column Block Write
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PD481850
PD481850
100-pin
uPD481850
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421-PC, 4516821-PC, 4516161-PC 16M-bit Synchronous DRAM for PC SDRAM Lite Description The µPD4516421-PC, 4516821-PC, 4516161-PC are high-speed 16,777,216-bit synchronous dynamic randomaccess memories, organized as 2,097,152 x 4 × 2, 1,048,576 × 8 × 2 and 524,288 × 16 × 2 word × bit × bank ,
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PD4516421-PC,
4516821-PC,
4516161-PC
16M-bit
4516161-PC
216-bit
44-pin
50-pin
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UPD4502161
Abstract: upd4502161g5a12 UPD4502161G5A12-7JF PD4502161 BD3/1/TX13/7.9/PP10/UPD4516421G5-A12-7JF
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4502161 2M-bit Synchronous DRAM Description The µPD4502161 is a high-speed 2,097,152-bit synchronous dynamic random-access memory, organized as 65,536 x 16 × 2 word × bit × bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.
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PD4502161
PD4502161
152-bit
50-pin
UPD4502161
upd4502161g5a12
UPD4502161G5A12-7JF
BD3/1/TX13/7.9/PP10/UPD4516421G5-A12-7JF
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WP1F
Abstract: CMOS blemish specification QCIF LR38630 LZ34C10
Text: LR38630 Digital Signal Processor for CIF CMOS Image Cameras LR38630 DESCRIPTION The LR38630 is a CMOS digital signal processor for color camera systems of 110 k-pixel CMOS image sensor with primary color mosaic filters. The camera system consists of CIF CMOS image
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LR38630
LR38630
LZ34C10)
LR38630)
LQFP080-P-1212)
70MAX.
WP1F
CMOS blemish specification
QCIF
LZ34C10
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FZ1200R12HP4
Abstract: No abstract text available
Text: Technische Information / technical information FZ1200R12HP4 IGBT-Module IGBT-modules IHM-B Modul mit soft schaltendem Trench-IGBT4 IHM-B module with soft-switching Trench-IGBT4 Vorläufige Daten / preliminary data +,-. / ! , 012 / ! Typische Anwendungen •8
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FZ1200R12HP4
FZ1200R12HP4
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PD48
Abstract: PD481850 lm 512
Text: DATA SHEET DATA SHEET MOS INTEGRATED CIRCUIT µPD481850 8M-bit Synchronous GRAM Description The µPD481850 is a synchronous graphics memory SGRAM organized as 131,072 words x 32 bits × 2 banks random access port. This device can operate up to 100 MHz by using synchronous interface. Also, it has 8-column Block Write function
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PD481850
PD481850
100-pin
S100GF-65-JBT
PD481850.
PD481850GF-JBT:
PD48
lm 512
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M12939EJ3V0DS00
Abstract: uPD4516421AG5-A10B-9NF uPD4516821AG5-A10-9NF uPD4516161AG5-A10B-9NF 4516161a PD4516821
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421A, 4516821A, 4516161A for Rev.P 16M-bit Synchronous DRAM 2-banks, LVTTL 2 Description The µPD4516421A, 4516821A, 4516161A are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 × 2, 1,048,576 × 8 × 2, 524,288 × 16 × 2 (word × bit × bank , respectively.
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PD4516421A,
516821A,
516161A
16M-bit
216-bit
44-pin
50-pin
M12939EJ3V0DS00
uPD4516421AG5-A10B-9NF
uPD4516821AG5-A10-9NF
uPD4516161AG5-A10B-9NF
4516161a
PD4516821
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uPD4504161
Abstract: upd4504161g5
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4504161 4M-bit Synchronous DRAM Description The µPD4504161 is a high-speed 4,194,304-bit synchronous dynamic random-access memory, organized as 131,072 x 16 × 2 word × bit × bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.
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PD4504161
PD4504161
304-bit
50-pin
uPD4504161
upd4504161g5
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UPD4504161
Abstract: PD4504161 upd4504161g5
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4504161 4M-bit Synchronous DRAM Description The µPD4504161 is a high-speed 4,194,304-bit synchronous dynamic random-access memory, organized as 131,072 x 16 × 2 word × bit × bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.
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PD4504161
PD4504161
304-bit
50-pin
UPD4504161
upd4504161g5
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4811650 for Rev.E 16 M-BIT SYNCHRONOUS GRAM 256K-WORD BY 32-BIT BY 2-BANK Description The µPD4811650 is a synchronous graphics memory SGRAM organized as 262,144 words x 32 bits × 2 banks random access port.
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PD4811650
256K-WORD
32-BIT
100-pin
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AxC11
Abstract: No abstract text available
Text: N EC ELECTRONICS INC dEEC ^ t 7 E 1 • tMS7S2S DG3R58b MM3 H N E C E _ 16Mbit Synchronous DRAM_ CONTENTS Programable 3 - stage pipeline. Features.
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DG3R58b
16Mbit
bM27S25
AxC11
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A8RN
Abstract: uPD4502161 D4502161
Text: DATA SHEET MOS INTEGRATED CIRCUIT ju P D 4 5 0 2 1 6 1 2M-bit Synchronous DRAM Description The /¿PD4502161 is a high-speed 2,097,152-bit synchronous dynamic random-access memory, organized as 65,536 x 16 x 2 word x bit x bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.
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uPD4502161
152-bit
50-pin
A8RN
D4502161
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NEC uPD 688
Abstract: CQ-111
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /i PD4516421,4516821,4516161 16M bit Synchronous DRAM Description The UPD4516421, UPD4516821, uPD 4516161 are high-speed 16 777 216-bit synchronous dynamic random-access memories, each organized as 2 097 152-word x
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uPD4516421
uPD4516821
uPD4516161
UPD4516421,
UPD4516821,
216-bit
152-word
576-word
288-word
x16-bit
NEC uPD 688
CQ-111
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT JuPD4502161 2M-bit Synchronous DRAM Description The ¿¡PD4502161 is a high-speed 2,097,152-bit synchronous dynam ic random -access memory, organized as 65,536 x 16 x 2 word x bit x bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.
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uPD4502161
PD4502161
152-bit
50-pin
S50G5-80-7JF3
PD4502161
PD4502161.
PD4502161G5-7JF:
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM D escrip tio n The /iPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynam ic random-access m em ories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 w ordxbitxbank , respectively.
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PD4516421,
16M-bit
/iPD4516421,
216-bit
152x4x2,
576x8x2
288x16x2
44-pin
50-pin
b42755S
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a2-xqa
Abstract: IC-3394
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD 4516421 , 4516821 , 4516161 16M-bit Synchronous DRAM Description The ¿iPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 x 2,1,048,576 x 8 x 2 and 524,288 x 16 x 2 word x bit x bank , respectively.
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16M-bit
uPD4516421
uPD4516821
uPD4516161
216-bit
44-pin
50-pin
IR35-107-2
VP15-107-2
a2-xqa
IC-3394
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT jUPD4811650 for Rev.E 16 M-BIT SYNCHRONOUS GRAM 256K-WORD BY 32-BIT BY 2-BANK Description The ,uPD4811650 is a synchronous graphics memory SGRAM organized as 262,144 words x 32 bits x 2 banks
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jUPD4811650
256K-WORD
32-BIT
uPD4811650
100-pin
S100GF-65-9BT-1
M13616EJ3V0DS00
PD4811650GF-9BT
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nec eric-2
Abstract: UPD481
Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT ¿¿PD4 8 1 8 5 0 8 M-bit Synchronous GRAM for Rev.L Description The /jPD 481 850 is a synchrono us graphics m em o ry SG R AM organized as 131,072 w ords x 32 b its x 2 banks random access port. T his device can ope rate up to 100 M Hz b y using synchronous interface.
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S100GF-65-JBT
UPD481850
PD481850.
/JPD481650GF-JBT
100-pin
nec eric-2
UPD481
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PD481850GF
Abstract: D481850
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD 481850 8M-bit Synchronous GRAM Description The iiPD481850 is a synchronous graphics memory SGRAM organized as 131,072 words x 32 bits x 2 banks random access port. This device can operate up to 100 MHz by using synchronous interface. Also, it has 8-column Block Write function
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uPD481850
100-pin
-613i8
-787io
S1000F-W-JBT
b4E7525
DDb3T73
pPD481850.
/1PD481850GF-JBT:
PD481850GF
D481850
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NEC uPD
Abstract: NEC AND 1994 AND sdram
Text: • b4B ?S 5S 0041123 S 34 ■ PRELIMINARY DATA SHEET_ M O S IN T E G R A T E D C IR C U IT M PD4516421,4516821,4516161 16M bit Synchronous DRAM Description The uPD4516421, uPD4516821, uPD 4516161 are high-speed 16 777 216-bit synchronous dynamic random-access memories, each organized as 2 097 152-word x
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uPD4516421
uPD4516821
uPD4516161
216-bit
152-word
576-word
288-word
x16-bit
NEC uPD
NEC AND 1994 AND sdram
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ^ 0 4 8 1 8 5 0 for Rev.L 8 M-BIT SYNCHRONOUS GRAM 128K-WORD BY 32-BIT BY 2-BANK Description The ,uPD481850 is a synchronous graphics memory SGRAM organized as 131,072 words x 32 bits x 2 banks random access port.
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128K-WORD
32-BIT
uPD481850
100-pin
S100GF-65-JBT
juPD481850
PD481850.
PD481850GF-JBT
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A91A
Abstract: uPD4516161AG5-A10-9NF nec 44pin NEC 4516821 TNC 24 mk 2 uPD4516161AG5-A80-9NF uPD4516161AG5-A10 NEC MEMORY
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4516421A, 4516821 A, 4516161A 16M-bit Synchronous DRAM Description The ¿¡PD4516421 A, 4516821 A, 4516161A are high-speed 16,777,216-bit synchronous dynam ic random -access mem ories, organized as 2,097,152 x 4 x 2, 1,048,576 x 8 x 2 and 524,288 x 16 x 2 word x bit x bank , respectively.
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uPD4516421A
uPD4516821A
uPD4516161A
16M-bit
PD4516421
516161A
216-bit
44-pin
50-pin
5-80-9N
A91A
uPD4516161AG5-A10-9NF
nec 44pin
NEC 4516821
TNC 24 mk 2
uPD4516161AG5-A80-9NF
uPD4516161AG5-A10
NEC MEMORY
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