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    2SD88 Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    2SD882-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-5, / Visit Renesas Electronics Corporation
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    2SD88 Price and Stock

    STMicroelectronics 2SD882

    TRANS NPN 30V 3A SOT32
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    DigiKey 2SD882 Tube 6,509 1
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    Avnet Americas 2SD882 Tube 14 Weeks 4,000
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    Mouser Electronics 2SD882 6,340
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    Newark 2SD882 Bulk 206 1
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    STMicroelectronics 2SD882 6,330 1
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    TME 2SD882 130 1
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    ComSIT USA 2SD882 50
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    Avnet Silica 2SD882 200 15 Weeks 50
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    EBV Elektronik 2SD882 15 Weeks 50
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    Win Source Electronics 2SD882 24,720
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    MOSLEADER 2SD882-ML

    1W 2V 3A SOT23
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    DigiKey 2SD882-ML Reel 200
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    Rochester Electronics LLC AD632SD-883B

    ANALOG MULTIPLIER OR DIVIDER
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    DigiKey AD632SD-883B Bulk 3
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    Rochester Electronics LLC AD572SD-883B

    12-BIT SAR PARALLEL ADC
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    DigiKey AD572SD-883B Bulk 1
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    Analog Devices Inc AD522SD-883B

    IC INST AMP 1 CIRCUIT 14CERDIP
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    DigiKey AD522SD-883B Tube
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    2SD88 Datasheets (164)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD88 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD88 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD88 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD88 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD88 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD88 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD88 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD88 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD88 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD88 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD88 Unknown Cross Reference Datasheet Scan PDF
    2SD880 Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SD880 Wing Shing Computer Components NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) Original PDF
    2SD880 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2SD880 Continental Device India TO-220 NPN Power Package Transistors Scan PDF
    2SD880 Mospec POWER TRANSISTORS(3A,60V,30W) Scan PDF
    2SD880 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD880 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD880 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD880 Unknown Scan PDF
    ...

    2SD88 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SD880L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. „ FEATURES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)


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    2SD880 2SD880 2SB834 2SD880L-TA3-T 2SD880G-TA3-T O-220 QW-R203-013 2SD880L PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD882 PNP Type Elektronische Bauelemente Epitaxl Planar Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 D E Description A S1 The 2SD882 is suited for the output stage of 0.75W audio, voltage requlator, and relay driver.


    Original
    2SD882 2SD882 100MHz 01-Jun-2002 380us, PDF

    2SD884

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SD884 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·High voltage;high speed ·Large PC APPLICATIONS ·For horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


    Original
    2SD884 O-220C 100mA 2SD884 PDF

    2SD882

    Abstract: complement 2sd882 2SB772 2SB772 TO-126
    Text: Inchange Semiconductor Product Specification 2SD882 Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SB772 APPLICATIONS ·Audio amplifier ·Voltage regulator ·DC-DC converter ·Relay driver PINNING PIN DESCRIPTION 1


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    2SD882 O-126 2SB772 2SD882 complement 2sd882 2SB772 2SB772 TO-126 PDF

    smd 2sd882

    Abstract: npn smd 2a 2sd882 smd transistor 2sd882 2SD882 TRANSISTOR 2SD882 hfe 60
    Text: Transistors SMD Type NPN Silicon Power Transistor 2SD882 Features Excellent hFE linearity and high hFE hFE = 60 to 400 VCE = 2 V, IC = 1 A Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage


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    2SD882 100uA 100mA 10MHz smd 2sd882 npn smd 2a 2sd882 smd transistor 2sd882 2SD882 TRANSISTOR 2SD882 hfe 60 PDF

    2sd880 equivalent

    Abstract: 2SD880, 1.5 power dissipation 2SB834 2SD880 2sD880 TRANSISTOR
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO-220 FEATURES z Low frequency power amplifier z Complement to 2SB834 1. BASE 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    O-220 2SD880 O-220 2SB834 500mA 300mA 2sd880 equivalent 2SD880, 1.5 power dissipation 2SB834 2SD880 2sD880 TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD880 Plastic-Encapsulate Transistors NPN TO—220 Features Power dissipation PCM: 1.5 W Tamb=25℃ Collector current ICM: 3 A Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. BASE 2. COLLECTOR 3. EMITTER


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    2SD880 500mA 300mA PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD882 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to 2SB772 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator TO-251 1:BASE 2:COLLECTOR 3: EMITTER


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    2SD882 2SB772 O-251 QW-R213-002 PDF

    2SD882T

    Abstract: No abstract text available
    Text: ST 2SD882T NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector to Base Voltage VCBO 40 V


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    2SD882T O-126 32cle 2SD882T PDF

    2SD882

    Abstract: 2sb772 D882 p h D882 transistor D882 datasheet 2SD882 pnp 2SB772 equivalent br b772 D882 B772 transistor b772
    Text: 2SB772 2SD882 PNP/NPN Epitaxial Planar Transistors TO-126 1. EMITTER 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current (DC) Symbol VCEO VCBO VEBO IC(DC)


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    2SB772 2SD882 O-126 PNP/2SB772 NPN/2SD882 2SB772 2SD882 D882 p h D882 transistor D882 datasheet 2SD882 pnp 2SB772 equivalent br b772 D882 B772 transistor b772 PDF

    2SD882

    Abstract: 2SD882Y
    Text: MCC 2SD882-R 2SD882-O 2SD882-Y 2SD882-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • NPN Silicon Plastic-Encapsulate Transistor Lead Free Finish/RoHS Compliant Note1 ("P" Suffix designates


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    2SD882-R 2SD882-O 2SD882-Y 2SD882-GR 25Watts -55OC 10mAdc, 100uAdc, 2SD882 2SD882Y PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2SD882 Features • • • • NPN Silicon Plastic-Encapsulate Transistor Capable of 1.25Watts of Power Dissipation.


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    2SD882 25Watts -55OC 10mAdc, 100uAdc, 40Vdc, PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD886 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2SD886 Freq50M PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO-220 FEATURES z Low Frequency Power Amplifier z Complement to 2SB834 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    O-220 2SD880 O-220 2SB834 500mA 300mA PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD882S NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR  SOT-223 * High current output up to 3A * Low saturation voltage * Complement to 2SB772S  APPLICATIONS TO-92 ORDERING INFORMATION Order Number Lead Free


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    2SD882S OT-223 2SB772S 2SD882SG-x-AA3-R 2SD882SG-x-AB3-R 2SD882SL-x-T92-B 2SD882SG-x-T92-B 2SD882SL-x-T92-K 2SD882SG-x-T92-K OT-89 PDF

    2SD882

    Abstract: 2SD882L 2SD882 TRANSISTOR 2sd882 TO-252 2SB772 TO-252 POWER AND MEDIUM POWER TRANSISTOR 2SB772 complement 2sd882 2SB772 2SD882G of 2SD882
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD882 NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR „ FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SB772 „ APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator


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    2SD882 2SB772 11112SD882L 2SD882G 2SD882-x-T60-K 2SD882-x-T6C-K 2SD882-x-TM3-T 2SD882-x-TN3-R 2SD882-x-TN3-T 2SD882-x-T9N-B 2SD882 2SD882L 2SD882 TRANSISTOR 2sd882 TO-252 2SB772 TO-252 POWER AND MEDIUM POWER TRANSISTOR 2SB772 complement 2sd882 2SB772 2SD882G of 2SD882 PDF

    2SD880Y

    Abstract: VCEO-60V 2SD880-Y 2SD880
    Text: SILICON PLASTIC POWER TRANSISTOR NPN 2SD880Y 3A 30W Technical Data …designed for Low Frequency Power Amplifier. F Collector-Emitter Voltage: VCEO=60V F DC Current Gain: 20 @ IC=3A F TO-220 Package MAXIMUM RATINGS Rating Symbol Value Unit Collector- Emitter Voltage


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    2SD880Y O-220 2SD880Y VCEO-60V 2SD880-Y 2SD880 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD886 3A , 50V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-126 Low frequency power amplifier High Current 1Emitter 2Collector 3Base Collector 2 REF. 3


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    2SD886 O-126 200mA 100mA 07-Mar-2011 PDF

    UTC2SD880

    Abstract: 2sd880 equivalent 2SB834 2SD880 QW-R203-013
    Text: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)


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    2SD880 2SD880 2SB834 O-220 300mA 500mA 500mA, QW-R203-013 UTC2SD880 2sd880 equivalent 2SB834 PDF

    2SD886

    Abstract: No abstract text available
    Text: 2SD886 2SD886 TRANSISTOR NPN TO-126C FEATURES Power dissipation PCM: 1. EMITTER 1 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 3 A Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 123 TJ, Tstg: -55℃ to +150℃


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    2SD886 O-126C 200mA 100mA 2SD886 PDF

    2s0880

    Abstract: 2SB83 250880 2SB834 2SD880 e50V 2sD880 TRANSISTOR
    Text: ÆfcMOS PEC NPN SILICON POWER TRANSISTORS NPN .designed for use in audio frequency power amplifier applications 2SD880 FEATURES: * Low Collector-Emitter Saturation Voltage VCE satf 1 0 V (Max @ I c=3.0A,Ib=0.3A * DC Current Gain hFE= 60-300 lc= 0.5A * Complememtary to PNP 2SB834


    OCR Scan
    2SB834 2SD880 2SD880 2s0880 2SB83 250880 2SB834 e50V 2sD880 TRANSISTOR PDF

    toshiba 2sd425

    Abstract: 2SC792 nec 2sd287 2SD427 2sd 311 2S0880 2SD287C 2SD1391 2SD313 2SD867
    Text: - m « € T y p e No. ' d 2SD 288 ^ 2SD 289 y B V B « a c 2SD 290 ^ 2SD 291 / 2SD 232 —• * 2SD 287 * 2SD 287C * * Manuf. h m SANYO 1m K 2 TOSHIBA A 2SD2023 V - — 2SD867 2SD1135 2SD1897 V - — 2SD880 2SD1135 2SD2023 ¿0UÖÖU ZÔU113ÏI ZSUZUZ3 * 2SD 312


    OCR Scan
    2SD287 2SD287C 2SD288 2SD289 2SD425 2SD425 2SD313 2SD313 2SD880 toshiba 2sd425 2SC792 nec 2sd287 2SD427 2sd 311 2S0880 2SD1391 2SD867 PDF

    2SD888

    Abstract: No abstract text available
    Text: 2SD888 2SD888 x ij □ NPN = V y u - JI2/S i N PN T riple Diffused Planar t AF Power Amplifier h FE, U n it ! m m 4 .4 m a x . 1 0 .2 m a x . • *Nf iS /F eatu res 2.9max. V cE s at A !{ & ^ \ / L o W • 3 • X -4 v -f- > T 'iS l# M H ^ o / H i g h speed sw itching


    OCR Scan
    2SD888 T0-220 HSl61 iit14/Electrical 2SD888 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB834 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER *Compkmntaryto 2SD880 ABSOLUTE MAXIMUM RATINGS a t T airfW fV Characteristic Symbol Rating Vcbo Collector-Base Voltaae


    OCR Scan
    2SB834 2SD880 -50mA -500mA -300mA -10VIe PDF