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    UPD4516421 Search Results

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    UPD4516421 Price and Stock

    NEC Electronics Group UPD4516421AG5-A10-9NF

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    Bristol Electronics UPD4516421AG5-A10-9NF 435
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    NEC Electronics Group UPD4516421AG5-A10B-9NF

    4M X 4 SYNCHRONOUS DRAM, 7 ns, PDSO44
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    Quest Components UPD4516421AG5-A10B-9NF 215
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    NEC Electronics Group UPD4516421AG5-A12-7JF-A

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    Quest Components UPD4516421AG5-A12-7JF-A 120
    • 1 $13.95
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    • 1000 $7.6725
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    NEC Electronics Group UPD4516421AG5A807JFE2

    Electronic Component
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    ComSIT USA UPD4516421AG5A807JFE2 140
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    UPD4516421 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    uPD4516421 NEC Semiconductor Selection Guide 1995 Original PDF
    uPD4516421AG5-A10-9NF NEC 16M-bit Synchronous DRAM Original PDF
    uPD4516421AG5-A10B-9NF NEC 16M-bit Synchronous DRAM Original PDF
    uPD4516421AG5-A10BL-9NF NEC 16M-bit Synchronous DRAM Original PDF
    uPD4516421AG5-A10L-9NF NEC 16M-bit Synchronous DRAM Original PDF
    uPD4516421AG5-A12-9NF NEC 16M-bit Synchronous DRAM Original PDF
    uPD4516421AG5-A12L-9NF NEC 16M-bit Synchronous DRAM Original PDF
    uPD4516421AG5-A80-9NF NEC 16M-bit Synchronous DRAM Original PDF
    uPD4516421AG5-A80L-9NF NEC 16M-bit Synchronous DRAM Original PDF

    UPD4516421 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    hy57v16801

    Abstract: KM48S2020 FCT3932 KM44S4020 nec 44pin AN-156 FCT163501 KM48S HY57V16401-10 DIMM 72 pin out
    Text: 2M/4M x 72 SYNCHRONOUS DRAM DIMM REFERENCE DESIGN APPLICATION NOTE AN-156 Integrated Device Technology, Inc. By Anupama Hegde INTRODUCTION DESIGN KIT CONTENTS Expectations of main memory performance have finally reached a point that calls for the use of synchronous DRAMs.


    Original     		AN-156 200pin 4Mx72 A0-11 DQ0-72 hy57v16801 KM48S2020 FCT3932 KM44S4020 nec 44pin AN-156 FCT163501 KM48S HY57V16401-10 DIMM 72 pin out PDF

    MR4010

    Abstract: mr4010 equivalent MR4010 circuit MUX31H LSI coreware library B010 R3000 R4000 LCB500K CW4010
    Text: MiniRISC MR4010 Superscalar Microprocessor Reference Device Contents 1 2 3 4 5 6 7 8 9 MR4010 Features MR4010 Functional Blocks 2.1 CW4010 Shell 2.2 Synchronous DRAM Controller DRAMC 2.3 SCbus to Local I/O Bus (Lbus) Controller (SCLC) 2.4 PLL Clock Circuit


    Original     		MR4010 MR4010 CW4010 mr4010 equivalent MR4010 circuit MUX31H LSI coreware library B010 R3000 R4000 LCB500K PDF

    IBM025161LG5D60

    Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
    Text: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.


    Original     		MB81141621 MB81141622 MB81G8322 MB81116421 TC59R1608 2ns500MHz TC59R0808 IBM025161LG5D60 gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT PDF

    RX64

    Abstract: MDP36 lr33300 BDLR4500 BDMR4011 LR4500 R4000 sca24 MDP21 MDP18
    Text: MiniRISC LR4500 Superscalar Microprocessor Technical Manual ® Order Number C14043 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.


    Original     		LR4500 C14043 DB14-000066-00, LR4500 Eu3580 RX64 MDP36 lr33300 BDLR4500 BDMR4011 R4000 sca24 MDP21 MDP18 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT M PD4516421,4516821,4516161 16M bit Synchronous DRAM Description The UPD4516421, UPD4516821, uPD 4516161 are high-speed 16 777 2 1 6-bit synchronous dynamic random-access memories, each organized as 2 097 152-word x


    OCR Scan     		PD4516421 UPD4516421, UPD4516821, 152-word 576-word 288-word x16-bit 400-mil 44-pin 400-mil, PDF

    NEC uPD 688

    Abstract: CQ-111
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /i PD4516421,4516821,4516161 16M bit Synchronous DRAM Description The UPD4516421, UPD4516821, uPD 4516161 are high-speed 16 777 216-bit synchronous dynamic random-access memories, each organized as 2 097 152-word x


    OCR Scan     		uPD4516421 uPD4516821 uPD4516161 UPD4516421, UPD4516821, 216-bit 152-word 576-word 288-word x16-bit NEC uPD 688 CQ-111 PDF

    NEC uPD

    Abstract: NEC AND 1994 AND sdram
    Text: • b4B ?S 5S 0041123 S 34 ■ PRELIMINARY DATA SHEET_ M O S IN T E G R A T E D C IR C U IT M PD4516421,4516821,4516161 16M bit Synchronous DRAM Description The uPD4516421, uPD4516821, uPD 4516161 are high-speed 16 777 216-bit synchronous dynamic random-access memories, each organized as 2 097 152-word x


    OCR Scan     		uPD4516421 uPD4516821 uPD4516161 216-bit 152-word 576-word 288-word x16-bit NEC uPD NEC AND 1994 AND sdram PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ NEC MOS INTEGRATED CIRCUIT MC-454BA80 4M-WORD BY 80-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE D escription The MC-454BA80 is a 4,194,304 words by 80 bits synchronous dynamic RAM module on which 20 pieces of 16 M


    OCR Scan     		MC-454BA80 80-BIT MC-454BA80 PD4516421 PDF

    d4516161

    Abstract: NEC 1216 D451616 4516161 IC-3394 ba6x T8836 D4516161GS d4516 UPD4516161
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.


    OCR Scan     		uPD4516421 uPD4516821 uPD4516161 16M-bit PD4516421, 216-bit 152x4x2, 576x8x2 288x16x2 44-pin d4516161 NEC 1216 D451616 4516161 IC-3394 ba6x T8836 D4516161GS d4516 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM D escrip tio n The /iPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynam ic random-access m em ories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 w ordxbitxbank , respectively.


    OCR Scan     		PD4516421, 16M-bit /iPD4516421, 216-bit 152x4x2, 576x8x2 288x16x2 44-pin 50-pin b42755S PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-454BA72 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-454BA72 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16M


    OCR Scan     		MC-454BA72 72-BIT MC-454BA72 uPD4516421 200S-50A4 PDF

    a2-xqa

    Abstract: IC-3394
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD 4516421 , 4516821 , 4516161 16M-bit Synchronous DRAM Description The ¿iPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 x 2,1,048,576 x 8 x 2 and 524,288 x 16 x 2 word x bit x bank , respectively.


    OCR Scan     		16M-bit uPD4516421 uPD4516821 uPD4516161 216-bit 44-pin 50-pin IR35-107-2 VP15-107-2 a2-xqa IC-3394 PDF

    d4516161

    Abstract: MPD4516421
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT uPD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description T he /¿PD4516421, 451 6821, 4516161 are high-speed 16,777,216 -bit s y nchrono us dyna m ic random -access m em o ries, org a n ize d a s 2,097,152 x 4 x 2, 1,048,576 x 8 * 2 and 524 ,288 x 16 x 2 w ord x bit * ban k}, respectively.


    OCR Scan     		uPD4516421 uPD4516821 uPD4516161 16M-bit PD4516421, 44-pin 50-pin VP15-107-2 IR35-107-2 d4516161 MPD4516421 PDF

    i8085

    Abstract: Nec AC 160
    Text: D A TA S H E E T NEC MOS INTEGRATED CIRCUIT jiPD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description T h e //PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit sy n c h ro n o u s d y n a m ic ra n d o m -a cce ss m e m o rie s, o rg an ized as 2 ,0 9 7 ,1 5 2 x4 x2 , 1,048,576x8x2 and 5 2 4,28 8x1 6x2 w o rd xb itx b a n k , re sp e ctiv e ly .


    OCR Scan     		uPD4516421 uPD4516821 uPD4516161 16M-bit //PD4516421, 216-bit 576x8x2 44-pin i8085 Nec AC 160 PDF

    A91A

    Abstract: uPD4516161AG5-A10-9NF nec 44pin NEC 4516821 TNC 24 mk 2 uPD4516161AG5-A80-9NF uPD4516161AG5-A10 NEC MEMORY
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4516421A, 4516821 A, 4516161A 16M-bit Synchronous DRAM Description The ¿¡PD4516421 A, 4516821 A, 4516161A are high-speed 16,777,216-bit synchronous dynam ic random -access mem ories, organized as 2,097,152 x 4 x 2, 1,048,576 x 8 x 2 and 524,288 x 16 x 2 word x bit x bank , respectively.


    OCR Scan     		uPD4516421A uPD4516821A uPD4516161A 16M-bit PD4516421 516161A 216-bit 44-pin 50-pin 5-80-9N A91A uPD4516161AG5-A10-9NF nec 44pin NEC 4516821 TNC 24 mk 2 uPD4516161AG5-A80-9NF uPD4516161AG5-A10 NEC MEMORY PDF

    uPD4516161AG5-A80-9NF

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT uPD4516421 A, 4516821 A, 4516161A for Rev. P 16M-bit Synchronous DRAM Description The /¿PD4516421 A, 4516821 A, 4516161A are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 x 2, 1,048,576 x 8 x 2 and 524,288 x 16 x 2 word x bit x bank , respectively.


    OCR Scan     		uPD4516421A uPD4516821A uPD4516161A 16M-bit PD4516421 516161A 216-bit 44-pin 50-pin uPD4516161AG5-A80-9NF PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT ' /¿PD4516421A, 4516821 A, 4516161A ; 16M-bit Synchronous DRAM i i j D escrip tio n The//PD4516421 A, 4516821 A, 4516161A are high-speed 16,777,216-bit synchronous dynamic random-access ’ memories, organized as 2,097,152 x 4 x 2,1,048,576 x 8 x 2 and 524,288 x 16 x 2 word x bit x bank , respectively.


    OCR Scan     		uPD4516421A 516161A 16M-bit The//PD4516421 516161A 216-bit 44-pin 50-pin PDF

    nec d4516

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The ¿tPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynam ic random-access m em ories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 w ordxbitxbank , respectively.


    OCR Scan     		uPD4516421 uPD4516821 uPD4516161 16M-bit tPD4516421, 216-bit 152x4x2, 576x8x2 288x16x2 44-pin nec d4516 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454AA725 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AA725 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of


    OCR Scan     		MC-454AA725 72-BIT MC-454AA725 uPD4516421 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /;PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM D escription The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access m emories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.


    OCR Scan     		PD4516421, 16M-bit 216-bit 152x4x2, 576x8x2 288x16x2 44-pin 50-pin S50G5-80-7JF3 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 x 2 , 1,048,576 x 8 x 2 and 524,288 x 16 x 2 word x bit x bank , respectively.


    OCR Scan     		uPD4516421 uPD4516821 uPD4516161 16M-bit 216-bit 44-pin 50-pin PDF

    D4516821G5-A12

    Abstract: nec 14t t4 bst 1046 xrba IC-3394 ba6x PD4516421 D4516821 nec 44pin SN1049
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT fd>D4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The jiPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynam ic random-access memories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.


    OCR Scan     		D4516421, 16M-bit uPD4516421 uPD4516821 uPD4516161 216-bit 152x4x2, 288x16x2 44-pin 50-pin D4516821G5-A12 nec 14t t4 bst 1046 xrba IC-3394 ba6x PD4516421 D4516821 nec 44pin SN1049 PDF

    4516821G5

    Abstract: 512KX16X2
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4516421-PC, 4516821-PC, 4516161-PC 16M-bit Synchronous DRAM for PC SDRAM Lite Description ThefiPD 4516421-PC , 4516821-PC, 4516161-PC are high-speed 16,777,216-bit synchronous dynam ic randomaccess m em ories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.


    OCR Scan     		uPD4516421-PC uPD4516821-PC uPD4516161-PC 16M-bit 4516421-PC 4516821-PC, 4516161-PC 216-bit 152x4x2, 576x8x2 4516821G5 512KX16X2 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC/ MOS INTEGRATED CIRCUIT _ /iiPD4516421-PC, 4516821-PC, 4516161-PC 16M-bit Synchronous DRAM for PC SDRAM Lite D e s c rip tio n The ¿¿PD4516421-PC, 4516821-PC, 4516161-PC are high-speed 16,777,216-bit synchronous dynamic randomaccess memories, organized as 2,097,152 x 4 x 2 , 1,048,576 x 8 x 2 and 524,288 x 1 6 x 2 word x bit x bank ,


    OCR Scan     		uPD4516421-PC uPD4516821-PC uPD4516161-PC 16M-bit PD4516421-PC, 4516821-PC, 4516161-PC 216-bit 44-pin 50-pin PDF