w989d2kb
Abstract: smd 6ac
Text: W989D6KB / W989D2KB 512Mb Mobile LPSDR 1. GENERAL DESCRIPTION The Winbond 512Mb Low Power SDRAM is a low power synchronous memory containing 536,870,912 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential
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W989D6KB
W989D2KB
512Mb
304-words
166MHz.
A01-002
w989d2kb
smd 6ac
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Untitled
Abstract: No abstract text available
Text: W988D6FB / W988D2FB 256Mb Mobile LPSDR 1. GENERAL DESCRIPTION The Winbond 256Mb Low Power SDRAM is a low power synchronous memory containing 268,435,456 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential
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W988D6FB
W988D2FB
256Mb
166MHz.
A01-004
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W989D6KBGX
Abstract: W989D2KBJX
Text: W989D6KB / W989D2KB 512Mb Mobile LPSDR 1. GENERAL DESCRIPTION The Winbond 512Mb Low Power SDRAM is a low power synchronous memory containing 536,870,912 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential
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W989D6KB
W989D2KB
512Mb
304-words
166MHz.
A01-003
W989D6KBGX
W989D2KBJX
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Untitled
Abstract: No abstract text available
Text: W989D6CB / W989D2CB 512Mb Mobile LPSDR 1. GENERAL DESCRIPTION The Winbond 512Mb Low Power SDRAM is a low power synchronous memory containing 536,870,912 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential
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W989D6CB
W989D2CB
512Mb
304-words
166MHz.
A01-006
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Untitled
Abstract: No abstract text available
Text: W987D6HB / W987D2HB 128Mb Mobile LPSDR 1. GENERAL DESCRIPTION The Winbond 128Mb Low Power SDRAM is a low power synchronous memory containing 134,217,728 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential
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W987D6HB
W987D2HB
128Mb
166MHz.
A01-003
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Untitled
Abstract: No abstract text available
Text: W987D6HB / W987D2HB 128Mb Mobile LPSDR 1. GENERAL DESCRIPTION The Winbond 128Mb Low Power SDRAM is a low power synchronous memory containing 134,217,728 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential
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W987D6HB
W987D2HB
128Mb
166MHz.
A01-004
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W989D2KB
Abstract: smd 6ac W989D6 W989D2K
Text: W989D6KB / W989D2KB 512Mb Mobile LPSDR 1. GENERAL DESCRIPTION The Winbond 512Mb Low Power SDRAM is a low power synchronous memory containing 536,870,912 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential
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W989D6KB
W989D2KB
512Mb
304-words
166MHz.
A01-001
W989D2KB
smd 6ac
W989D6
W989D2K
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W25R128FV
Abstract: W25Q128JV W25R128F W25Q128FV W25Q128F USON-8 W25Q80DL W978H6KB W25Q80BVSSIG
Text: 2014 PRODUCT SELECTION GUIDE Mobile DRAM Specialty DRAM Code Storage Flash Memory Winbond Electronics Corporation is a worldwide leading supplier of specialty memory IC’s. The company provides memory solution backed by the expert capabilities of design, manufacturing
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RTL8111
Abstract: Realtek RTL8111 US15W processor atom battery z510 winbond mobile dram ETX kontron
Text: conga-QA Module for ultra mobile applications Ultra Mobile Ultra compact Qseven module based on Intel Atom™ Processor Z5xx Formfactor Qseven Form Factor, 70x70 mm2 Lowest power consumption CPU Fast serial differential interfaces for high data bandwidth
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70x70
US15W
RTL8111
Realtek RTL8111
US15W
processor atom
battery z510
winbond mobile dram
ETX kontron
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W986416EH
Abstract: W9864G2EH W981216DH verilog DTMF decoder ISD1600 W9825G6CH W9812G6DH w981616ch SIS 730S isd1620
Text: PRODUCT GUIDE Winbond ISSI 2005 http://www.hengsen.cn 产品指南手册 PRODUCT GUIDE =WinbondISSI 授权香港及中国代理= 8 位单片机标准件 型号 W78C32C ROM 型式 ROM ROM RAM I/O 脚 外扩存储 器空间 工作速度 封装 定时器/
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W78C32C
Q4/04
IS25C64A-2
IS25C64A-3
16Kx8
IS25C128-2
W986416EH
W9864G2EH
W981216DH
verilog DTMF decoder
ISD1600
W9825G6CH
W9812G6DH
w981616ch
SIS 730S
isd1620
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W988D6F
Abstract: winbond 05 solder ball material W988D2F
Text: W988D6FB / W988D2FB 256Mb Mobile LPSDR TABLE OF CONTENTS 1. GENERAL DESCRIPTION . 4 2. FEATURES . 4
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W988D6FB
W988D2FB
256Mb
A01-003
W988D6F
winbond 05 solder ball material
W988D2F
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A01-002
Abstract: by1 SMD winbond mobile dram A01002 W987D6HBGX
Text: W987D6HB / W987D2HB 128Mb Mobile LPSDR TABLE OF CONTENTS 1. GENERAL DESCRIPTION . 4 2. FEATURES . 4
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W987D6HB
W987D2HB
128Mb
A01-002
A01-002
by1 SMD
winbond mobile dram
A01002
W987D6HBGX
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W988D6F
Abstract: W988D2F
Text: W988D6FB / W988D2FB 256Mb Mobile LPSDR TABLE OF CONTENTS 1. GENERAL DESCRIPTION . 4 2. FEATURES . 4
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W988D6FB
W988D2FB
256Mb
A01-002
W988D6F
W988D2F
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W989
Abstract: W989D2CB W989D6CB
Text: W989D6CB / W989D2CB 512Mb Mobile LPSDR TABLE OF CONTENTS 1. GENERAL DESCRIPTION . 3 2. FEATURES . 3
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W989D6CB
W989D2CB
512Mb
A01-004
W989
W989D2CB
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EIAJ-IC-121-17
Abstract: JESD22-A110 EIAJ-ED4701-D323 EIAJ-IC-121-18 MIL-STD-883 PRESSURE COOKER failure rate SM stress migration EIAJ-IC-121 JESD22A110
Text: Quality and Reliability Report 5. Reliability Testing The purpose of reliability testing is to ensure that The purpose of the high-temperature operating life products are properly designed and assembled by HTOL test is to determine the reliability of subjecting them to stress conditions that acceler-
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MIL-STD-883,
85C/140C
EIAJ-IC-121-17
JESD22-A110
EIAJ-ED4701-D323
EIAJ-IC-121-18
MIL-STD-883 PRESSURE COOKER
failure rate SM stress migration
EIAJ-IC-121
JESD22A110
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siemens F716
Abstract: f9321 book national semiconductor diode PJ 0416 National PC87591 National PC87591l 74x541 74x377 pj 87 diode TCS 4199
Text: To all our customers We are pleased to inform you that National Semiconductor Corporation's Advanced PC APC Division joined Winbond Electronics Corporation on May 5th 2005. As a result, in this document “National Semiconductor Corporation” and “National” should be understood as
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Untitled
Abstract: No abstract text available
Text: W83194R-39/-39A 100MHZ 3-DIMM CLOCK Table of Contents1. GENERAL DESCRIPTION . 3 2. PRODUCT FEATURES . 3
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W83194R-39/-39A
100MHZ
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ali m1487 B1
Abstract: m6117c a1 ali m6117c a1 cpu M6117C ali m6117c m1487 b1 ALI chipset M1487 ALI 1487 RTL8029AS SBC-456
Text: Table of Contents 7 11 6 8 12 9 13 10 14 15 siz e bC om pa ct SB Cs s PC ia LP Su X- ed 29 26 23 ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
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Untitled
Abstract: No abstract text available
Text: W83194R-39/-39A 100MHZ 3-DIMM CLOCK W83194R-39/39A Data Sheet Revision History Pages Dates Version Version Main Contents On Web 1 n.a. 2 n.a. 02/Apr 1.0 n.a. All of the versions before 0.50 are for internal use. 1.0 Change version and version on web site to 1.0
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W83194R-39/-39A
100MHZ
W83194R-39/39A
02/Apr
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Untitled
Abstract: No abstract text available
Text: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR 1. GENERAL DESCRIPTION W94AD6KB / W94AD2KB is a high-speed Low Power double data rate synchronous dynamic random access memory LPDDR SDRAM , An access to the LPDDR SDRAM is burst oriented. Consecutive memory location in one page can be accessed at a burst length of 2, 4, 8 and 16
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W94AD6KB
W94AD2KB
W94AD2KB
A01-002
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W963A6BBN
Abstract: W963A6BBN70 W963A6BBN80
Text: W963A6BBN 512K WORD x 16BIT LOW POWER PSEUDO SRAM Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3
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W963A6BBN
16BIT
W963A6BBN
W963A6BBN70
W963A6BBN80
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Untitled
Abstract: No abstract text available
Text: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR 1. GENERAL DESCRIPTION W94AD6KB / W94AD2KB is a high-speed Low Power double data rate synchronous dynamic random access memory LPDDR SDRAM , An access to the LPDDR SDRAM is burst oriented. Consecutive memory location in one page can be accessed at a burst length of 2, 4, 8 and 16
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W94AD6KB
W94AD2KB
W94AD2KB
A01-003
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winband
Abstract: W25X40BV W25Q408W w25x40v W651GG2JB WSON* 8x6mm w25q128 W25X16AV 208-MIL w25X20BV
Text: t/vinband We D eliver Product Selection Guide - o 2010 Mobile RAM Specialty DRAM Graphics DRAM Flash Memory Memory Product Foundry Service Product Selection Guide 2010 Contents 2 Mobile RAM Pseudo SRAM Low Power SDR SDRAM Low Power DDR / DDR2 SDRAM
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OCR Scan
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300mm
winband
W25X40BV
W25Q408W
w25x40v
W651GG2JB
WSON* 8x6mm
w25q128
W25X16AV
208-MIL
w25X20BV
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W25X128
Abstract: W25Q40 w25q64 W25Q16BW W25Q64bv W25X80BV W25Q32BV W25016BV winbond* W25Q W25X16AV
Text: winband We D eliv er 2009 Product Selection Guide Mobile RAM Specialty DRAM Flash Memory Memory Product Foundry Service O W Product Selection Guide 2009 » Contents 2 Mobile RAM Pseudo SRAM Low Power SDR SDRAM Low Power DDR SDRAM 4 Specialty DRAM SDRAM DDR SDRAM
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300mm
W25X128
W25Q40
w25q64
W25Q16BW
W25Q64bv
W25X80BV
W25Q32BV
W25016BV
winbond* W25Q
W25X16AV
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