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    VISHAY TSSOP-6 PACKAGE Search Results

    VISHAY TSSOP-6 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    VISHAY TSSOP-6 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PACK-0007-6

    Abstract: 72721 SOIC T1 diode
    Text: Device Orientation Vishay Siliconix Device Orientation MSOP, SOIC, SSOP and TSSOP Devices DEVICE ORIENTATION Package Method MSOP T1 SOIC T1 SSOP T1 TSSOP T1 User Direction of Feed Revision control of this drawing is maintained through Document Control, Pack Specification—PACK-0007-6


    Original     		PDF Specification--PACK-0007-6 T-05206, PACK-0007-6 72721 SOIC T1 diode

    IC 0116

    Abstract: No abstract text available
    Text: Package Information Vishay Siliconix POWER IC THERMALLY ENHANCED PowerPAKR TSSOP: 14/16-LEAD 3 8 D CL 6 N e −B− 7 R 4 E1 CL 8 GAUGE PLANE −H− 0.25 E SEATING PLANE q1 0.7500 R1 L L1 DETAIL A 1 0.7500 2 3 Ğ 0.07600 0.025−0.075 DP PIN 1 INDICATOR POLISH


    Original     		PDF 14/16-LEAD 31-Mar-05 5M-1982. MO-153, IC 0116

    Si6410DQ

    Abstract: 70661
    Text: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D


    Original     		PDF Si6410DQ Si6410DQ-T1-GE3 08-Apr-05 70661

    Si6866BDQ

    Abstract: No abstract text available
    Text: Si6866BDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0275 @ VGS = 4.5 V 6 0.040 @ VGS = 2.5 V 4.9 D Lead (Pb)-Free Version is RoHS Compliant D1 Available D2 TSSOP-8 S1 1 G1 2 S2 3 G2 4 8 D 7 D


    Original     		PDF Si6866BDQ Si6866BDQ-T1 Si6866BDQ-T1--E3 08-Apr-05

    Si6866BDQ

    Abstract: No abstract text available
    Text: Si6866BDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0275 @ VGS = 4.5 V 6 0.040 @ VGS = 2.5 V 4.9 D Lead (Pb)-Free Version is RoHS Compliant D1 Available D2 TSSOP-8 S1 1 G1 2 S2 3 G2 4 8 D 7 D


    Original     		PDF Si6866BDQ Si6866BDQ-T1 Si6866BDQ-T1--E3 18-Jul-08

    SI6410DQ

    Abstract: No abstract text available
    Text: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D


    Original     		PDF Si6410DQ Si6410DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI6410DQ

    Abstract: No abstract text available
    Text: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D


    Original     		PDF Si6410DQ Si6410DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    72511

    Abstract: Si6433BDQ Si6433BDQ-T1
    Text: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −12 12 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −4.8 0.070 @ VGS = −2.5 V −3.6 S* TSSOP-8 D 1 S 2 S 3 G 4 G * Source Pins 2, 3, 6 and 7 must be tied common. 8 D 7 S D


    Original     		PDF Si6433BDQ Si6433BDQ-T1 Si6433BDQ-T1--E3 S-50156--Rev. 31-Jan-05 72511

    Si6410DQ

    Abstract: No abstract text available
    Text: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D


    Original     		PDF Si6410DQ Si6410DQ-T1-GE3 11-Mar-11

    72511

    Abstract: Si6433BDQ Si6433BDQ-T1
    Text: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −12 12 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −4.8 0.070 @ VGS = −2.5 V −3.6 S* TSSOP-8 D 1 S 2 S 3 G 4 G * Source Pins 2, 3, 6 and 7 must be tied common. 8 D 7 S D


    Original     		PDF Si6433BDQ Si6433BDQ-T1 Si6433BDQ-T1--E3 08-Apr-05 72511

    Si6866BDQ

    Abstract: No abstract text available
    Text: Si6866BDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0275 @ VGS = 4.5 V 6 0.040 @ VGS = 2.5 V 4.9 D Lead (Pb)-Free Version is RoHS Compliant D1 Available D2 TSSOP-8 S1 1 G1 2 S2 3 G2 4 8 D 7 D


    Original     		PDF Si6866BDQ Si6866BDQ-T1 Si6866BDQ-T1--E3 S-50695--Rev. 18-Apr-05

    MOSFET TSSOP-8

    Abstract: SI6410DQ
    Text: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D


    Original     		PDF Si6410DQ Si6410DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MOSFET TSSOP-8

    SI6410DQ

    Abstract: No abstract text available
    Text: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D


    Original     		PDF Si6410DQ Si6410DQ-T1-GE3 11-Mar-11

    Si6410DQ

    Abstract: No abstract text available
    Text: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D


    Original     		PDF Si6410DQ Si6410DQ-T1-GE3 18-Jul-08

    72511

    Abstract: No abstract text available
    Text: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7


    Original     		PDF Si6433BDQ Si6433BDQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 72511

    Si6433BDQ

    Abstract: 72511
    Text: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7


    Original     		PDF Si6433BDQ Si6433BDQ-T1-GE3 08-Apr-05 72511

    72511

    Abstract: No abstract text available
    Text: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7


    Original     		PDF Si6433BDQ Si6433BDQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 72511

    72511

    Abstract: No abstract text available
    Text: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7


    Original     		PDF Si6433BDQ Si6433BDQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 72511

    72511

    Abstract: No abstract text available
    Text: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7


    Original     		PDF Si6433BDQ Si6433BDQ-T1-GE3 11-Mar-11 72511

    72511

    Abstract: Si6433BDQ
    Text: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7


    Original     		PDF Si6433BDQ Si6433BDQ-T1-GE3 11-Mar-11 72511

    TSSOP-8 footprint

    Abstract: MOSFET TSSOP-8 TSSOP8 Package tssop8 thermal performance single power diode package AN1001 Si6436DQ Si9936DY
    Text: AN1001 Vishay Siliconix LITTLE FOOTR TSSOP-8 The Next Step in Surface-Mount Power MOSFETs Wharton McDaniel and David Oldham When Vishay Siliconix introduced its LITTLE FOOT MOSFETs, it was the first time that power MOSFETs had been offered in a true surface-mount package, the SOIC. LITTLE


    Original     		PDF AN1001 12-Dec-03 TSSOP-8 footprint MOSFET TSSOP-8 TSSOP8 Package tssop8 thermal performance single power diode package AN1001 Si6436DQ Si9936DY

    AN1001

    Abstract: Si6436DQ Si9936DY si9936 640 1 TSSOP8
    Text: AN1001 Vishay Siliconix LITTLE FOOTR TSSOP-8 The Next Step in Surface-Mount Power MOSFETs Wharton McDaniel and David Oldham When Vishay Siliconix introduced its LITTLE FOOT MOSFETs, it was the first time that power MOSFETs had been offered in a true surface-mount package, the SOIC. LITTLE


    Original     		PDF AN1001 MS-012 S-00164--Rev. 31-Jan-00 07-Jun-00 AN1001 Si6436DQ Si9936DY si9936 640 1 TSSOP8

    Untitled

    Abstract: No abstract text available
    Text: Si6423DQ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.0085 at VGS = - 4.5 V - 9.5 0.0106 at VGS = - 2.5 V - 8.5 0.014 at VGS = - 1.8 V - 7.5 • Halogen-free • TrenchFET Power MOSFET RoHS APPLICATIONS


    Original     		PDF Si6423DQ Si6423DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si6423DQ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0085 at VGS = - 4.5 V - 9.5 - 12 0.0106 at VGS = - 2.5 V - 8.5 0.014 at VGS = - 1.8 V - 7.5 • Halogen-free • TrenchFET Power MOSFET RoHS APPLICATIONS


    Original     		PDF Si6423DQ Si6423DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12