4835
Abstract: AN609 Si6866BDQ 1.4835 74042
Text: Si6866BDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si6866BDQ
AN609
02-Jul-07
4835
1.4835
74042
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72703
Abstract: Si6866BDQ
Text: SPICE Device Model Si6866BDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si6866BDQ
06-Dec-03
72703
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T1 diode
Abstract: Si6866BDQ Si6866DQ Si6866DQ-T1
Text: Specification Comparison Vishay Siliconix Si6866BDQ vs. Si6866DQ Description: Dual N-Channel, 2.5 V G-S MOSFET Package: TSSOP-8 Pin Out: Identical Part Number Replacements: Si6866BDQ-T1 Replaces Si6866DQ-T1 Si6866BDQ-T1-E3 (Lead (Pb)-free version) Replaces Si6866DQ-T1
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Si6866BDQ
Si6866DQ
Si6866BDQ-T1
Si6866DQ-T1
Si6866BDQ-T1-E3
09-Nov-06
T1 diode
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Si6866BDQ
Abstract: No abstract text available
Text: Si6866BDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0275 @ VGS = 4.5 V 6 0.040 @ VGS = 2.5 V 4.9 D Lead (Pb)-Free Version is RoHS Compliant D1 Available D2 TSSOP-8 S1 1 G1 2 S2 3 G2 4 8 D 7 D
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Si6866BDQ
Si6866BDQ-T1
Si6866BDQ-T1--E3
S-50695--Rev.
18-Apr-05
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Si6866BDQ
Abstract: No abstract text available
Text: Si6866BDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0275 @ VGS = 4.5 V 6 0.040 @ VGS = 2.5 V 4.9 D Lead (Pb)-Free Version is RoHS Compliant D1 Available D2 TSSOP-8 S1 1 G1 2 S2 3 G2 4 8 D 7 D
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Si6866BDQ
Si6866BDQ-T1
Si6866BDQ-T1--E3
08-Apr-05
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PDF
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Si6866BDQ
Abstract: 72703
Text: SPICE Device Model Si6866BDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si6866BDQ
18-Jul-08
72703
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PDF
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Si6866BDQ
Abstract: No abstract text available
Text: Si6866BDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0275 @ VGS = 4.5 V 6 0.040 @ VGS = 2.5 V 4.9 D Lead (Pb)-Free Version is RoHS Compliant D1 Available D2 TSSOP-8 S1 1 G1 2 S2 3 G2 4 8 D 7 D
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Si6866BDQ
Si6866BDQ-T1
Si6866BDQ-T1--E3
18-Jul-08
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PDF
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Si6866BDQ
Abstract: No abstract text available
Text: Si6866BDQ Vishay Siliconix New Product Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 20 ID (A) 0.0275 @ VGS = 4.5 V 6 0.040 @ VGS = 2.5 V 4.9 D D TSSOP-8 S1 1 G1 2 S2 3 G2 4 8 D 7 D D G1 6 D 5 D G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET
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Si6866BDQ
Si6866BDQ-T1
S-32675--Rev.
29-Dec-03
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72703
Abstract: Si6866BDQ mosfet Vds 30 Vgs 25
Text: SPICE Device Model Si6866BDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si6866BDQ
S-60146Rev.
13-Feb-06
72703
mosfet Vds 30 Vgs 25
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Siliconix mosfet guide
Abstract: Si9371 power selector guide Si8901EDB Si6875DQ nimh spice model charge SI8901 vishay resistances guide Si4927DY Si6866BDQ
Text: Power MOSFETs for Battery Pack Applications Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no
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Si9731
TSSOP-16
Si9371
Siliconix mosfet guide
Si9371
power selector guide
Si8901EDB
Si6875DQ
nimh spice model charge
SI8901
vishay resistances guide
Si4927DY
Si6866BDQ
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si5480
Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT
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Si6463BDQ
Si6459BDQ-T1-GE3
SI5944DU-T1-E3
SI5944DU-T1-GE3
SI5945DU-T1-E3
SI5945DU-T1-GE3
SI5947DU-T1-E3
SI5947DU-T1-GE3
PPAKSC75
si5480
SiA913DJ-T1-GE3
SIA513DJ-T1-E3
SI6404DQ-T1
SIA411DJ-T1-E3
SIB414DK-T1-E3
SI6913DQ-T1-E3
SIA513DJ-T1-GE3
SI6925ADQ-T1-E3
SI6981DQ-T1-GE3
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