Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    VISHAY SILICONIX SOLDERING BGA Search Results

    VISHAY SILICONIX SOLDERING BGA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CN-AC3MMDZBAU Amphenol Cables on Demand 3-Pin XLR Male Panel Mount Connector - Amphenol AC3MMDZB-AU - Solder Type (Black + Gold Contacts) Datasheet
    CN-DSUB50PIN0-000 Amphenol Cables on Demand Amphenol CN-DSUB50PIN0-000 D-Subminiature (DB50 Male D-Sub) Connector, 50-Position Pin Contacts, Solder-Cup Terminals Datasheet
    CN-DSUBHD62PN-000 Amphenol Cables on Demand Amphenol CN-DSUBHD62PN-000 High-Density D-Subminiature (HD62 Male D-Sub) Connector, 62-Position Pin Contacts, Solder-Cup Terminals Datasheet
    CN-DSUB25SKT0-000 Amphenol Cables on Demand Amphenol CN-DSUB25SKT0-000 D-Subminiature (DB25 Female D-Sub) Connector, 25-Position Socket Contacts, Solder-Cup Terminals Datasheet
    CN-DSUBHD26SK-000 Amphenol Cables on Demand Amphenol CN-DSUBHD26SK-000 High-Density D-Subminiature (HD26 Female D-Sub) Connector, 26-Position Socket Contacts, Solder-Cup Terminals Datasheet

    VISHAY SILICONIX SOLDERING BGA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SAC387

    Abstract: NXR-1400 tamura solder paste SN63 PB37 alpha PowerPAK 1212-8 stencil ekra e5 SAC387 solder MIL-STD-750 method 1037 UP78 SAC-387
    Text: VISHAY SILICONIX Power MOSFETs Application Note 914 "PowerPAK 1212-8", The Proven Automotive Package By Kandarp Pandya INTRODUCTION This application note presents useful information on the PowerPAK 1212-8 to facilitate SQE and design engineers. Vishay introduced the PowerPAK power MOSFET package


    Original     		PDF 1990s AN825 17-May-10 SAC387 NXR-1400 tamura solder paste SN63 PB37 alpha PowerPAK 1212-8 stencil ekra e5 SAC387 solder MIL-STD-750 method 1037 UP78 SAC-387

    Untitled

    Abstract: No abstract text available
    Text: Si8413DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.048 at VGS = - 4.5 V - 6.5 0.063 at VGS = - 2.5 V - 5.7 Qg (Typ.) 14 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8413DB Si8413DB-T1-E1 11-Mar-11

    73507

    Abstract: IPC-9701 IPC-A-610D ekra e5 SAC387 tamura tlf tamura solder paste Cold solder joint pyramax mosfet so8 smd
    Text: AN610 Vishay Siliconix PolarPAK Solder Joint Reliability Based on Thermal Fatigue IPC-9701 By Kandarp Pandya ABSTRACT PolarPAK, a thermally enhanced package from Vishay Intertechnology, facilitates MOSFET heat removal from an exposed top metal lead-frame connected to a


    Original     		PDF AN610 IPC-9701 IPC-9701 31-Aug-05 73507 IPC-A-610D ekra e5 SAC387 tamura tlf tamura solder paste Cold solder joint pyramax mosfet so8 smd

    smd marking AAAA

    Abstract: No abstract text available
    Text: Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.037 at VGS = 4.5 V 7.3 20 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging


    Original     		PDF Si8402DB Si8402DB-T1-E1 11-Mar-11 smd marking AAAA

    Untitled

    Abstract: No abstract text available
    Text: Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) RS1S2(on) (Ω) 20 0.024 at VGS = 4.5 V 7 0.026 at VGS = 3.7 V 6.8 0.034 at VGS = 2.5 V 5.0 0.040 at VGS = 1.8 V 5.5 7 6 COMPLIANT S2 S1 Pin 1 Identifier


    Original     		PDF Si8900EDB 8900E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI8901

    Abstract: No abstract text available
    Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET


    Original     		PDF Si8901EDB 8901E Si8901EDB-T2-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI8901

    Untitled

    Abstract: No abstract text available
    Text: Si8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 30 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 4.9 0.060 at VGS = 2.5 V 4.2 • TrenchFET Power MOSFET • Ultra-Low RSS(on) and 22.5 mΩ Maximum Effective On-Resistance


    Original     		PDF Si8904EDB 8904E 8904E Si8904EDB-T2-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si8902AEDB www.vishay.com Vishay Siliconix N-Channel 24 V D-S MOSFET FEATURES PRODUCT SUMMARY 24 • TrenchFET power MOSFET RS1S2 (Ω) Max. IS1S2 (A) a 0.028 at VGS = 4.5 V 5.9 • Small 2.4 mm x 1.6 mm outline 0.029 at VGS = 3.7 V 5.8 • Thin 0.6 mm max. height


    Original     		PDF Si8902AEDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si8902EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET


    Original     		PDF Si8901EDB 8901E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET


    Original     		PDF Si8901EDB 8901E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si8405DB Vishay Siliconix 12-V P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.055 at VGS = - 4.5 V - 4.9 0.070 at VGS = - 2.5 V - 4.4 0.090 at VGS = - 1.8 V - 4.0 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging


    Original     		PDF Si8405DB Si8405DB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 30 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 4.9 0.060 at VGS = 2.5 V 4.2 • TrenchFET Power MOSFET • Ultra-Low RSS(on) and 22.5 mΩ Maximum Effective On-Resistance


    Original     		PDF Si8904EDB 8904E 8904E Si8904EDB-T2-E1 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si8409DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.046 at VGS = - 4.5 V - 6.3 0.065 at VGS = - 2.5 V - 5.3 Qg (Typ.) 17 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8409DB Si8401DB Si8409DB-T1-E1 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si8415DB Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 12 ID (A) 0.037 at VGS = - 4.5 V - 7.3 0.046 at VGS = - 2.5 V - 6.6 0.060 at VGS = - 1.8 V - 5.8 Qg (Typ.) 19 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging


    Original     		PDF Si8415DB Si84emarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    01802

    Abstract: No abstract text available
    Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8401DB Si3443DV Si8401DB-T1-E1 11-Mar-11 01802

    Untitled

    Abstract: No abstract text available
    Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET


    Original     		PDF Si8901EDB 8901E Si8901EDB-T2-E1 11-Mar-11

    UP78

    Abstract: Aaa SMD MARKING
    Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8401DB Si3443DV Si8401DB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 UP78 Aaa SMD MARKING

    Untitled

    Abstract: No abstract text available
    Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si8902EDB 8902E 8902E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.037 at VGS = 4.5 V 7.3 20 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging


    Original     		PDF Si8402DB Si8402DB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si8407DB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.027 at VGS = - 4.5 V - 8.2 0.032 at VGS = - 2.5 V - 7.5 0.045 at VGS = - 1.8 V - 6.6 MICRO FOOT Bump Side View S S 4 6 G S 3 • TrenchFET Power MOSFET


    Original     		PDF Si8407DB 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si8413DB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.048 at VGS = - 4.5 V - 6.5 0.063 at VGS = - 2.5 V - 5.7 Qg (Typ.) 14 MICRO FOOT Bump Side View 3 Backside View APPLICATIONS 2 D D S G 4 • TrenchFET Power MOSFET


    Original     		PDF Si8413DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    micro pitch BGA

    Abstract: AN824 DG3000
    Text: Si8415DB Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.037 at VGS = - 4.5 V - 7.3 0.046 at VGS = - 2.5 V - 6.6 0.060 at VGS = - 1.8 V - 5.8 Qg (Typ.) 19 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging


    Original     		PDF Si8415DB Si8415DB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 micro pitch BGA AN824 DG3000

    Untitled

    Abstract: No abstract text available
    Text: Si8407DB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.027 at VGS = - 4.5 V - 8.2 0.032 at VGS = - 2.5 V - 7.5 0.045 at VGS = - 1.8 V - 6.6 MICRO FOOT Bump Side View S S 4 6 G S 3 • TrenchFET Power MOSFET


    Original     		PDF Si8407DB 2002/95/EC Si8407DB-T2-E1 11-Mar-11