VFBGA 120
Abstract: VFBGA package tray tray 23X23 10x14 239.2 AN 7823 chippac tray 8X14 vFBGA* 96 bALL
Text: FBGA-SD Fine Pitch Ball Grid Array - Stacked Die • FBGA-SD: Laminate substrate based enabling 2 & 4 layers of routing flexibility • FBGA-T-SD: Single metal layer tape based substrate with dense routing & good electrical performance • Available in 1.4mm LFBGA-SD , 1.2mm (TFBGASD/TFBGA-T-SD), 1.0mm (VFBGA-SD/VFBGA-TSD) & 0.80mm (WFBGA-SD) maximum package
|
Original
|
PDF
|
|
CSR BC212
Abstract: MDR741F CSR BLUECORE VIRTUAL MACHINE CSR BlueCore 4 Application Program Interface BlueCore 3 csr bluetooth csr BC02 BlueCore 2 External casira casira csr crystal trim kit BC212015ADN-E4
Text: Product Data Sheet Device Features BlueCore 2-External Low power 1.8V operation TM Small footprint in 96-Ball VFBGA Package 6x6mm Single Chip Bluetooth System Fully qualified Bluetooth component Full speed class 2 Bluetooth operation with full 7 slave piconet support
|
Original
|
PDF
|
96-Ball
-40T105
BC212015-ds-001b
CSR BC212
MDR741F
CSR BLUECORE VIRTUAL MACHINE
CSR BlueCore 4 Application Program Interface
BlueCore 3 csr
bluetooth csr BC02
BlueCore 2 External
casira
casira csr crystal trim kit
BC212015ADN-E4
|
BCR100
Abstract: No abstract text available
Text: PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc
|
Original
|
PDF
|
128Mb
09005aef80ec6f79
pdf/09005aef80ec6f65
128Mb_
BCR100
|
SR52
Abstract: FY618 SR-52
Text: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM
|
Original
|
PDF
|
16-word
16-bit)
09005aef80b425b4
MT28F1284W18
SR52
FY618
SR-52
|
Untitled
Abstract: No abstract text available
Text: 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ
|
Original
|
PDF
|
MT45W4MW16BFB
MT45W2MW16BFB
54-Ball
pdf/09005aef80be2036
09005aef80be1fbd
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features • • • • • Figure 1: Ball Assignment 54-Ball VFBGA Single device supports asynchronous, page, and burst operations VCC, VCCQ Voltages
|
Original
|
PDF
|
MT45W4MW16BFB
MT45W2MW16BFB
54-Ball
09005aef80be1fbd
|
MT45W8MW16BGX
Abstract: MT45W8MW16BGX-701LWT BDQ8 CSP3-20
Text: 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc 1.7V–1.95V VccQ
|
Original
|
PDF
|
128Mb
MT45W8MW16BGX
54-Ball
39nsH
09005aef80ec6f79
pdf/09005aef80ec6f65
128Mb_
MT45W8MW16BGX
MT45W8MW16BGX-701LWT
BDQ8
CSP3-20
|
Untitled
Abstract: No abstract text available
Text: 4 MEG x 16 ASYNC/PAGE CellularRAM MEMORY ASYNCHRONOUS CellularRAMTM MT45W4MW16PFA Features Figure 1: 48-Ball VFBGA • Asynchronous and page mode interface • Random Access Time: 70ns, 85ns • Page Mode Read Access Sixteen-word page size Interpage read access: 70ns, 85ns
|
Original
|
PDF
|
MT45W4MW16P
MT45W4MW16PFA
48-Ball
09005aef80be1ee8
pdf/09005aef80be1f7f
|
FX110
Abstract: FX108
Text: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W30 1.8V Low Voltage, Extended Temperature Features Ball Assignment 56-Ball VFBGA • Flexible 4Mb multi-partition architecture • Single word 16-bit data bus Support for true concurrent operation with zero
|
Original
|
PDF
|
16-bit)
MT28F644W30
FX110
FX108
|
Untitled
Abstract: No abstract text available
Text: 4 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ • Random Access Time: 70ns
|
Original
|
PDF
|
09005aef80be1fbd
pdf/09005aef80be2036
|
FX119
Abstract: FX117
Text: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency
|
Original
|
PDF
|
16-bit)
09005aef8098d2b5
MT28F644W30
FX119
FX117
|
FY618
Abstract: FY617
Text: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM
|
Original
|
PDF
|
16-word
16-bit)
09005aef80b425b4
MT28F1284W18
FY618
FY617
|
JESD51-9
Abstract: VFBGA package tray AN 7823 JESD51-2 vFBGA* 96 bALL WFBGA lfbga Encapsulation thermal resistance TRAY 15X15 tfBGA PACKAGE thermal resistance tray vfbga
Text: FBGA Fine Pitch Ball Grid Array • Array molded, cost effective, space saving package solution • Available in 1.40mm LFBGA , 1.20mm (TFBGA), and 1.00mm (VFBGA), 0.80mm (WFBGA) and 0.55mm (UFBGA) maximum thickness • Laminate substrate based package which enables 2 and 4 layers of
|
Original
|
PDF
|
|
SMD MARKING CODE AADV
Abstract: marking SR5 SMD MT28F1284W18 AADV
Text: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA • Dedicated commands to decrease programming times for both in-factory and in-system operations • Fast programming algorithm FPA for in-factory PROGRAM operation
|
Original
|
PDF
|
MT28F1284W18
56-Ball
16-word
16-bit)
09005aef80b425b4
MT28F1284W18
SMD MARKING CODE AADV
marking SR5 SMD
AADV
|
|
|
Untitled
Abstract: No abstract text available
Text: 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE CellularRAM MEMORY ASYNCHRONOUS CellularRAMTM MT45W4MW16PFA MT45W2MW16PFA Features Figure 1: 48-Ball VFBGA • Asynchronous and Page Mode interface • Random Access Time: 70ns, 85ns • Page Mode Read Access Sixteen-word page size
|
Original
|
PDF
|
MT45W4MW16P
MT45W2MW16P
MT45W4MW16PFA
MT45W2MW16PFA
48-Ball
09005aef80be1ee8
pdf/09005aef80be1f7f
|
FY849
Abstract: FW843 FW842 FW84 FY848 SR-52
Text: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284L18 1.8V Low Voltage, Extended Temperature Features Figure 1: 80-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Buffered fast programming algorithm Buffered FPA for
|
Original
|
PDF
|
16-bit)
09005aef81002765
MT28F1284L18
FY849
FW843
FW842
FW84
FY848
SR-52
|
MT48LC16M16LF
Abstract: No abstract text available
Text: PRELIMINARY‡ 256Mb: x16 MOBILE SDRAM MOBILE SDRAM MT48LC16M16LF, MT48G16M16LF, MT48V16M16LF 4 MEG X 16 X 4 BANKS Features Figure 1: Ball Assignment Top View 54-Ball VFBGA • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can
|
Original
|
PDF
|
256Mb:
192-cycle
16M16
54-pin
09005aef80737ef7
256Mbx16
MT48LC16M16LF
|
FY-103
Abstract: 770MAX
Text: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency
|
Original
|
PDF
|
16-bit)
09005aef8098d2b5
MT28F644W30
FY-103
770MAX
|
FW863
Abstract: FX861 smd marking H6
Text: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284L30 1.8V Low Voltage, Extended Temperature Features Figure 1: 80-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Buffered fast programming algorithm Buffered FPA for
|
Original
|
PDF
|
16-bit)
09005aef8115e8b3
MT28F1284L30
FW863
FX861
smd marking H6
|
MT48LC4M32B2P
Abstract: marking 6a2 smd 6A 1176
Text: 128Mb: x32 SDRAM Features SDR SDRAM MT48LC4M32B2 – 1 Meg x 32 x 4 Banks Features Options Marking • Configuration – 4 Meg x 32 1 Meg x 32 x 4 banks • Package – OCPL1 – 86-pin TSOP II (400 mil) – 86-pin TSOP II (400 mil) Pb-free – 90-ball VFBGA (8mm x 13mm)
|
Original
|
PDF
|
128Mb:
MT48LC4M32B2
PC100-compliant
4096-cycle
09005aef80872800
MT48LC4M32B2P
marking 6a2 smd
6A 1176
|
MT48LC4M32B2P
Abstract: TP 472
Text: 128Mb: x32 SDRAM Features SDR SDRAM MT48LC4M32B2 – 1 Meg x 32 x 4 Banks Features Options Marking • Configuration – 4 Meg x 32 1 Meg x 32 x 4 banks • Package – OCPL1 – 86-pin TSOP II (400 mil) – 86-pin TSOP II (400 mil) Pb-free – 90-ball VFBGA (8mm x 13mm)
|
Original
|
PDF
|
128Mb:
MT48LC4M32B2
PC100-compliant
4096-cycle
09005aef80872800
MT48LC4M32B2P
TP 472
|
DSA0044716
Abstract: SR-52
Text: PRELIMINARY‡ 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W30 MT28F644W18 1.8V Low Voltage, Extended Temperature Features • • • • • • • • • • • • • • • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multi-partition architecture
|
Original
|
PDF
|
16-bit)
MT28F644W30
DSA0044716
SR-52
|
CSR BLUECORE VIRTUAL MACHINE
Abstract: CSR BC212 BC212015BD CSR BLUECORE at command CSR BLUECORE 6 BCCMD Protocol MDR741F BlueCore BCCMD Commands BlueCore 3 csr CSR USB SPI converter csr BC212015
Text: _äìÉ`çêÉ OJbñíÉêå~ä= qj Device Features Single Chip Bluetooth System Low power 1.8V operation Small footprint in 96-ball VFBGA and LGA packages 6x6mm 8x8mm and 10x10mm Fully qualified Bluetooth component 0.18µm CMOS technology
|
Original
|
PDF
|
96-ball
10x10mm)
BC212013
BC212015
10x10
BC212015-ds-001f
CSR BLUECORE VIRTUAL MACHINE
CSR BC212
BC212015BD
CSR BLUECORE at command
CSR BLUECORE 6 BCCMD Protocol
MDR741F
BlueCore BCCMD Commands
BlueCore 3 csr
CSR USB SPI converter
csr BC212015
|
SANDISK NAND
Abstract: TDK GBDriver Sandisk NAND Flash memory controller "NAND Flash" sandisk GBDriver sandisk Nand flash NAND IC s sandisk nand usb GBDriver RA3 SanDisk compactflash datasheet
Text: NAND IC EU Directive 2002/95/EC RoHS PBDE PBB GBDriver XR Controller IC For NAND Type Flash Memory To 16G Bytes, GBDriver series XR type SRAM-BUS 8mm SRAM 1 NAND CPU-BUS NAND ATA/IDE NAND OS XR 4 A B C D E F G H J K 9 10 VFBGA-100pin 1.00 max. 0.18 to 0.28
|
Original
|
PDF
|
2002/95/EC
VFBGA-100pin
64Mbit
32Gbit
BSF-K01CA
16Gbit
SANDISK NAND
TDK GBDriver
Sandisk NAND Flash memory controller
"NAND Flash" sandisk
GBDriver
sandisk Nand flash
NAND IC s
sandisk nand usb
GBDriver RA3
SanDisk compactflash datasheet
|
