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Cypress Semiconductor MB95F128MBPF-G-JNE1 NO WARRANTY
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DigiKey	MB95F128MBPF-G-JNE1	Bulk	695		1	1 $2.85 10 $2.85 100 $2.85 1000 $2.85 10000 $2.85	Buy Now
Cypress Semiconductor MB95F128MBPF-G-N9E1 NO WARRANTY
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DigiKey	MB95F128MBPF-G-N9E1	Tray	310		1	1 $2.6 10 $2.6 100 $2.6 1000 $2.6 10000 $2.6	Buy Now
Kingston Technology Company KSM64R52BD4-128MB 128GB 6400MT/S DDR5 ECC REG CL52
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DigiKey	KSM64R52BD4-128MB	Tray	5		1	1 $2102.58 10 $2102.58 100 $2102.58 1000 $2102.58 10000 $2102.58	Buy Now
Mouser Electronics	KSM64R52BD4-128MB					1 - 10 $2119.54 100 $2119.54 1000 $2119.54 10000 $2119.54	Get Quote
Amphenol ProLabs CF-128MB-C JEDEC Standard 128MB 68-pin Comp
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DigiKey	CF-128MB-C				1	1 $10 10 $10 100 $9.5 1000 $10 10000 $10	Buy Now
Infineon Technologies AG MB95F128MBPF-GE1 IC MCU 8BIT 60KB FLASH
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DigiKey	MB95F128MBPF-GE1	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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128MB_ Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
128MbRDRAMs		Rambus	Rambus SO-RIMM Module (with 64Mb RDRAMs)		Original	PDF

128MB_ Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IBM "embedded dram" Abstract: m5m4v4169 Intel 1103 DRAM Nintendo64 IBM98 toshiba fet databook dynamic memory controler MOSYS eDRAM "1t-sram" MoSys Text: ABSTRACT MODERN DRAM ARCHITECTURES by Brian Thomas Davis Co-Chair: Assistant Professor Bruce Jacob Co-Chair: Professor Trevor Mudge Dynamic Random Access Memories DRAM are the dominant solid-state memory devices used for primary memories in the ubiquitous microprocessor systems of	Original	conn95] 64-Mbit Woo00] EE380 class/ee380/ Wulf95] Xanalys00] Yabu99] IBM "embedded dram" m5m4v4169 Intel 1103 DRAM Nintendo64 IBM98 toshiba fet databook dynamic memory controler MOSYS eDRAM "1t-sram" MoSys	PDF
micron lpddr Abstract: 46h8m16 8M16 MT46H8M16LF MT46H4M32LF fbgapackaged Text: 128Mb: x16, x32 Mobile LPDDR SDRAM AT Addendum Features Mobile LPDDR SDRAM AT Addendum MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options Marking • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data DQS	Original	128Mb: MT46H8M16LF MT46H4M32LF 09005aef835b8f7c 09005aef835b8e70 micron lpddr 46h8m16 8M16 MT46H8M16LF MT46H4M32LF fbgapackaged	PDF
s11 stopping compound Abstract: DEF01 Text: 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)	Original	128Mb: MT46H8M16LF MT46H4M32LF 138ns. 09005aef8331b3e9/Source: 09005aef8331b3ce s11 stopping compound DEF01	PDF
cr1 5 p26z Abstract: No abstract text available Text: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7V–1.95V VCC – 1.7V–3.3V1 VCCQ	Original	128Mb: MT45W8MW16BGX 09005aef80ec6f79/Source: 09005aef80ec6f65 cr1 5 p26z	PDF
09005aef8091e66d Abstract: MT48LC16M8A2BB Text: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive	Original	128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 4096-cycle 4096-cycle 09005aef8091e66d MT48LC16M8A2BB	PDF
Untitled Abstract: No abstract text available Text: Preliminary‡ 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)	Original	128Mb: MT46H8M16LF MT46H4M32LF 09005aef8331b3e9 09005aef8331b3ce	PDF
MT48LC16M8A2BB Abstract: No abstract text available Text: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • Plastic package – OCPL2 – 54-pin TSOP II 400 mil – 54-pin TSOP II (400 mil) Pb-free	Original	128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 54-pin 60-ball 54-ball MT48LC16M8A2BB	PDF
Untitled Abstract: No abstract text available Text: Advance‡ 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)	Original	128Mb: MT46H8M16LF MT46H4M32LF 09005aef82ce3074/Source: 09005aef82ce20c9	PDF
Untitled Abstract: No abstract text available Text: Preliminary‡ 128Mb: x16 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF - 2 Meg x 16 x 4 banks Features Figure 1: • Temperature compensated self refresh TCSR • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be	Original	128Mb: MT48H8M16LF 096-cycle 09005aef8237e877/Source: 09005aef8237e8d8	PDF
MT48LC4M32B2P Abstract: marking 6a2 smd 6A 1176 Text: 128Mb: x32 SDRAM Features SDR SDRAM MT48LC4M32B2 – 1 Meg x 32 x 4 Banks Features Options Marking • Configuration – 4 Meg x 32 1 Meg x 32 x 4 banks • Package – OCPL1 – 86-pin TSOP II (400 mil) – 86-pin TSOP II (400 mil) Pb-free – 90-ball VFBGA (8mm x 13mm)	Original	128Mb: MT48LC4M32B2 PC100-compliant 4096-cycle 09005aef80872800 MT48LC4M32B2P marking 6a2 smd 6A 1176	PDF
elpida lpddr2 Abstract: Elpida LPDDR2 Memory lpddr2 samsung* lpddr2 micron lpddr2 samsung lpddr2 ELPIDA lpddr lpddr lpddr2 datasheet ELPIDA mobile dram LPDDR2 Text: 128Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 Banks MT46H4M32LF – 1 Meg x 32 x 4 Banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 8 Meg x 16 2 Meg x 16 x 4 banks – 4 Meg x 32 (1 Meg x 32 x 4 banks)	Original	128Mb: MT46H8M16LF MT46H4M32LF 60-ball 90-ball 09005aef8331b3e9 elpida lpddr2 Elpida LPDDR2 Memory lpddr2 samsung* lpddr2 micron lpddr2 samsung lpddr2 ELPIDA lpddr lpddr lpddr2 datasheet ELPIDA mobile dram LPDDR2	PDF
micron vccp Abstract: TN-45-13 UtRAM Density micron 128MB NOR FLASH K1B2816 Text: TN-45-13: CellularRAM replacing UtRAM Introduction Technical Note Using CellularRAM to Replace UtRAM Introduction The Micron family of CellularRAM™ devices is designed to be backward compatible with 6T SRAM and early-generation asynchronous and page PSRAM. Designs requiring	Original	TN-45-13: 09005aef8201fbdc TN4513 09005aef8201fb90/Source: micron vccp TN-45-13 UtRAM Density micron 128MB NOR FLASH K1B2816	PDF
MT48LC16M8A2BB Abstract: No abstract text available Text: 128Mb: x4, x8, x16 Automotive SDRAM Features Automotive SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive	Original	128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 4096-cycle 4096-cycle 09005aef84baf515 x4x8x16 MT48LC16M8A2BB	PDF
MT48LC16M8A2BB Abstract: No abstract text available Text: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive	Original	128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 4096-cycle 09005aef8091e66d x4x8x16 MT48LC16M8A2BB	PDF

Untitled Abstract: No abstract text available Text: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages – 1.70–1.95V VCC – 1.7–3.3V1 VCCQ	Original	128Mb: MT45W8MW16BGX 09005aef80ec6f79/Source: 09005aef80ec6f65	PDF
mt46 Abstract: No abstract text available Text: Preliminary‡ 128Mb: 8 Meg x 16 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 Banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/mobile Features Figure 1: • VDD = 1.7–1.95V, VDDQ = 1.7–1.95V	Original	128Mb: MT46H8M16LF 09005aef822b7e27/Source: 09005aef822b7dd6 mt46	PDF
MT48LC8M16A2B4 Abstract: MT48LC16M8A2BB PC133 registered reference design Text: Preliminary‡ 128Mb: x4, x8, x16 Automotive SDRAM Features Automotive SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive	Original	128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 4096-cycle 4096-cycle 09005aef84baf515 x4x8x16 MT48LC8M16A2B4 MT48LC16M8A2BB PC133 registered reference design	PDF
MT48LC16M8A2BB Abstract: No abstract text available Text: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • Plastic package – OCPL2 – 54-pin TSOP II 400 mil – 54-pin TSOP II (400 mil) Pb-free	Original	128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 4096-cycle 09005aef8091e66d x4x8x16 MT48LC16M8A2BB	PDF
Untitled Abstract: No abstract text available Text: Preliminary‡ 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF – 2 Meg x 16 x 4 banks MT48H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive	Original	128Mb: MT48H8M16LF MT48H4M32LF 09005aef832ff1ea 09005aef832ff1ac	PDF
Untitled Abstract: No abstract text available Text: 128 Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–3.3V1 VCCQ	Original	MT45W8MW16BGX 09005aef80ec6f79/Source: 09005aef80ec6f65	PDF
micron marking MT48LC8M16A2B4 Abstract: MT48LC16M8A2BB Text: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options Marking • Configurations – 32 Meg x 4 8 Meg x 4 x 4 banks – 16 Meg x 8 (4 Meg x 8 x 4 banks)	Original	128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 4096-cycle 4096-cycle 09005aef8091e66d micron marking MT48LC8M16A2B4 MT48LC16M8A2BB	PDF
MT45W8MW16BGX-7013LWT Abstract: MT45W8MW16 FBGA DECODER MT45W8MW16BGX Text: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/ Page/Burst CellularRAM 1.5 Memory Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages – 1.70–1.95V VCC	Original	128Mb: MT45W8MW16BGX 09005aef80ec6f79/Source: 09005aef80ec6f65 MT45W8MW16BGX-7013LWT MT45W8MW16 FBGA DECODER MT45W8MW16BGX	PDF
8M16 Abstract: MT48H8M16LFB4-8 MT48 MT48H8M16LF Text: 128Mb: x16 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF - 2 Meg x 16 x 4 banks Features Figure 1: • VDD/VDDQ = 1.70–1.95V • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be	Original	128Mb: MT48H8M16LF 096-cycle 09005aef8237e877/Source: 09005aef8237e8d8 8M16 MT48H8M16LFB4-8 MT48	PDF
MT48LC16M8A2BB Abstract: No abstract text available Text: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive	Original	128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 4096-cycle 09005aef8091e66d x4x8x16 MT48LC16M8A2BB	PDF

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128MB_ Search Results

128MB_ Price and Stock

Cypress Semiconductor MB95F128MBPF-G-JNE1

Cypress Semiconductor MB95F128MBPF-G-N9E1

Kingston Technology Company KSM64R52BD4-128MB

Amphenol ProLabs CF-128MB-C

Infineon Technologies AG MB95F128MBPF-GE1

128MB_ Datasheets (1)

128MB_ Datasheets Context Search

IBM "embedded dram"

micron lpddr

s11 stopping compound

cr1 5 p26z

09005aef8091e66d

Untitled

MT48LC16M8A2BB

Untitled

Untitled

MT48LC4M32B2P

elpida lpddr2

micron vccp

MT48LC16M8A2BB

MT48LC16M8A2BB

Untitled

mt46

MT48LC8M16A2B4

MT48LC16M8A2BB

Untitled

Untitled

micron marking MT48LC8M16A2B4

MT45W8MW16BGX-7013LWT

8M16

MT48LC16M8A2BB