DIODE B12
Abstract: B12 DIODE TSG15N120CN
Text: TSG15N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES V VGES (V) IC (A) 1200 ±20 15 General Description The TSG15N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers
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TSG15N120CN
TSG15N120CN
30pcs
DIODE B12
B12 DIODE
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RF transistor marking IN SOT-89
Abstract: RF transistor marking H SOT-89 RF transistor marking "SOT-89" RF transistor Type code SOT-89
Text: TSB1424 Low Vcesat PNP Transistor SOT-89 SOT-23 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -20V BVCEO -20V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.2 @ IC / IB = -2A / -100mA (Typ.) Complementary part with TSD2150
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TSB1424
OT-89
OT-23
-100mA
TSD2150
TSB1424CY
TSB1424CX
RF transistor marking IN SOT-89
RF transistor marking H SOT-89
RF transistor marking "SOT-89"
RF transistor Type code SOT-89
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SMD TRANSISTOR MARKING w7
Abstract: No abstract text available
Text: PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBHV9115T
O-236AB)
PBHV8115T.
AEC-Q101
PBHV9115T
771-PBHV9115T215
SMD TRANSISTOR MARKING w7
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TRANSISTOR SMD CODE PACKAGE SOT89 4
Abstract: No abstract text available
Text: PBSS5240X 40 V, 2 A PNP low VCEsat BISS transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement:
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PBSS5240X
PBSS4240X.
TRANSISTOR SMD CODE PACKAGE SOT89 4
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Untitled
Abstract: No abstract text available
Text: SEMiX251GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 242 A Tc = 80 °C 170 A 150 A ICnom ICRM SEMiX 13 Trench IGBT Modules SEMiX251GD126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V
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SEMiX251GD126HDs
E63532
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Untitled
Abstract: No abstract text available
Text: SEMiX453GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX453GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V
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SEMiX453GB12E4s
E63532
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Untitled
Abstract: No abstract text available
Text: SEMiX452GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX452GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V
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SEMiX452GB126HDs
E63532
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Untitled
Abstract: No abstract text available
Text: SEMiX303GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 466 A Tc = 80°C 359 A 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 338 A Tc = 80°C 252 A 900 A -40 . 175 °C ICRM = 3xICnom VGES
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SEMiX303GB12T4s
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Untitled
Abstract: No abstract text available
Text: SKM400GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 616 A Tc = 80 °C 474 A 400 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules SKM400GAL12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V
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SKM400GAL12T4
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Untitled
Abstract: No abstract text available
Text: SKiiP 26GH12T4V11 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM MiniSKiiP 2 H-bridge inverter SKiiP 26GH12T4V11 VGES tpsc Tj ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V
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26GH12T4V11
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Untitled
Abstract: No abstract text available
Text: SKiiP 12ACC12T4V10 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 1 - 6 Tj = 25 °C VCES IC Tj = 150 °C IC MiniSKiiP 1 Tj = 175 °C ICRM VGES VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj Typical Applications* 12 A 12 A Ts = 70 °C 12 A 8 A 24
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12ACC12T4V10
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S44 MARKING
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS4320X 20 V, 3 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Dec 15 2004 Nov 03 NXP Semiconductors Product data sheet 20 V, 3 A NPN low VCEsat (BISS) transistor PBSS4320X
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M3D109
PBSS4320X
SC-62)
R75/03/pp12
771-PBSS4320X135
S44 MARKING
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pb5540
Abstract: pb554 PBSS5540Z PBSS5540Z,115
Text: DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D087 PBSS5540Z 40 V low VCEsat PNP transistor Product data sheet Supersedes data of 2001 Jan 26 2001 Sep 21 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5540Z FEATURES QUICK REFERENCE DATA
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M3D087
PBSS5540Z
OT223
PBSS4540Z.
PB554mail
613514/04/pp9
771-PBSS5540Z-T/R
pb5540
pb554
PBSS5540Z,115
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Untitled
Abstract: No abstract text available
Text: SKiM306GD12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Ts = 25 °C 410 A Ts = 70 °C 333 A 300 A ICnom ICRM VGES SKiM 63 tpsc Trench IGBT Modules SKiM306GD12E4 Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V
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SKiM306GD12E4
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Untitled
Abstract: No abstract text available
Text: SEMiX302GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GAR12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V
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SEMiX302GAR12E4s
E63532
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Untitled
Abstract: No abstract text available
Text: SKiM301MLI07E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 650 V Ts = 25 °C 256 A Ts = 70 °C 202 A 300 A ICnom ICRM VGES SKiM 4 tpsc IGBT Modules SKiM301MLI07E4 Tj ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 650 V
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SKiM301MLI07E4
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Untitled
Abstract: No abstract text available
Text: SEMiX453GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
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SEMiX453GAL12E4s
E63532
Ap453GAL12E4s
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Untitled
Abstract: No abstract text available
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 1200 1200 190 / 145 380 / 290 ± 20 800 –40 . + 150 (125) 2 500 RGE = 20 kΩ Tcase = 25/70 °C Tcase = 25/70 °C; tp = 1 ms per IGBT, Tcase = 25 °C
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Abstract: No abstract text available
Text: SEMiX404GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 618 A Tc = 80 °C 475 A 400 A ICnom ICRM SEMiX 4s Trench IGBT Modules SEMiX404GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V
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Untitled
Abstract: No abstract text available
Text: SO T2 23 PBSS5360Z 60 V, 3 A PNP low VCEsat BISS transistor 19 February 2014 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
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PBSS5360Z
OT223
SC-73)
PBSS4360Z.
AEC-Q101
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resistor 2200 ohm
Abstract: No abstract text available
Text: MIO 600-65E11 IC80 = 600 A = 6500 V VCES VCE sat typ = 4.2 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C' C C C 5 7 9 E E E 4 6 8 3 G 2 E' 1 Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES IC85 TC = 85°C ICM
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600-65E11
20110119a
resistor 2200 ohm
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APT0406
Abstract: APT0502
Text: APTGT100A120T3AG Phase leg Trench + Field Stop IGBT Power Module 29 30 31 32 VCES = 1200V IC = 100A @ Tc = 100°C Application 13 • • • • 4 3 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features 26 27
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APTGT100A120T3AG
APT0406
APT0502
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PBSS4240T
Abstract: PBSS5240T
Text: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4240T 40 V; 2 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2001 Jul 13 2004 Jan 09 Philips Semiconductors Product specification 40 V; 2 A NPN low VCEsat (BISS) transistor PBSS4240T QUICK REFERENCE DATA
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PBSS4240T
OT89/SOT223
SCA76
R75/02/pp7
PBSS4240T
PBSS5240T
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T20D201
Abstract: gt20d201
Text: TOSHIBA GT20D201 Insulated Gate Bipolar Transistor U nit in m m Silicon P Channel MOS Type High Power Amplifier Application Features • High Breakdown Voltage - VCES = -250V Min • High Forward Transfer Admittance - Yfs' = 10S (Typ.) • Complementary to GT20D101
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GT20D201
-250V
GT20D101
T20D201
T20D201
gt20d201
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