Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SEMIX251GD126HDS Search Results

    SF Impression Pixel

    SEMIX251GD126HDS Price and Stock

    SEMIKRON SEMIX251GD126HDS

    Igbt Module, Six, 1.2Kv, 242A; Dc Collector Current:242A; Collector Emitter Saturation Voltage Vce(On):2.15V; Power Dissipation Pd:-; Junction Temperature, Tj Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage V(Br)Ceo:1.2Kvrohs Compliant: Yes |Semikron SEMIX251GD126HDS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SEMIX251GD126HDS Bulk 4
    • 1 $184.8
    • 10 $179.48
    • 100 $168.62
    • 1000 $168.62
    • 10000 $168.62
    		Buy Now

    SEMIX251GD126HDS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SEMIX251GD126HDS Semikron Trench IGBT Modules Original PDF

    SEMIX251GD126HDS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEMiX251GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 242 A Tc = 80 °C 170 A 150 A ICnom ICRM SEMiX 13 Trench IGBT Modules SEMiX251GD126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V


    Original     		PDF SEMiX251GD126HDs E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX251GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 242 A Tc = 80 °C 170 A 150 A ICnom ICRM SEMiX 13 Trench IGBT Modules ICRM = 2xICnom 300 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original     		PDF SEMiX251GD126HDs E63532

    200 A WELDING INVERTER DESIGN BY IGBT

    Abstract: No abstract text available
    Text: SEMiX251GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 242 A Tc = 80 °C 170 A 150 A ICnom ICRM SEMiX 13 tpsc Trench IGBT Modules ICRM = 2xICnom 300 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original     		PDF SEMiX251GD126HDs E63532 B100/125 R100exp B100/125 1/T-1/T100) 200 A WELDING INVERTER DESIGN BY IGBT

    Untitled

    Abstract: No abstract text available
    Text: SEMiX251GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 242 A Tc = 80 °C 170 A 150 A ICnom ICRM SEMiX 13 Trench IGBT Modules ICRM = 2xICnom 300 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original     		PDF SEMiX251GD126HDs E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX251GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 242 A Tc = 80 °C 170 A 150 A ICnom ICRM SEMiX 13 tpsc Trench IGBT Modules ICRM = 2xICnom 300 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original     		PDF SEMiX251GD126HDs E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX251GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 242 A Tc = 80°C 170 A 300 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 207 A Tc = 80°C 143 A ICRM = 2xICnom VGES SEMiX 13 Trench IGBT Modules


    Original     		PDF SEMiX251GD126HDs

    SEMIX353GB126V1

    Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
    Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots


    Original     		PDF SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1