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    SEMIX452GB126HDS Price and Stock

    SEMIKRON SEMIX452GB126HDS

    Igbt Module, Dual, 1.2Kv, 455A; Dc Collector Current:455A; Collector Emitter Saturation Voltage Vce(On):2.15V; Power Dissipation Pd:-; Junction Temperature, Tj Max:125°C; Igbt Termination:Stud; Operating Temperature Max:125°C Rohs Compliant: Yes |Semikron SEMIX452GB126HDS
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    SEMIX452GB126HDS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SEMIX452GB126HDS Semikron Trench IGBT Modules Original PDF

    SEMIX452GB126HDS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEMiX452GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX452GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V


    Original     		PDF SEMiX452GB126HDs E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX452GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX452GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V


    Original     		PDF SEMiX452GB126HDs SEMiX452GB126HDs E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX452GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C


    Original     		PDF SEMiX452GB126HDs E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX452GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX452GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V


    Original     		PDF SEMiX452GB126HDs SEMiX452GB126HDs E63532 Inv11:

    C319A

    Abstract: SEMIX452GB126HDS
    Text: SEMiX452GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original     		PDF SEMiX452GB126HDs E63532 C319A SEMIX452GB126HDS

    Untitled

    Abstract: No abstract text available
    Text: SEMiX452GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 455 A Tc = 80°C 319 A 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 394 A Tc = 80°C 272 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules


    Original     		PDF SEMiX452GB126HDs

    Untitled

    Abstract: No abstract text available
    Text: SEMiX452GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original     		PDF SEMiX452GB126HDs E6353SEMiX452GB126HDs

    SEMIX353GB126V1

    Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
    Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots


    Original     		PDF SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1