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    V3102 Search Results

    V3102 Result Highlights (5)

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    6V31023PGGI Renesas Electronics Corporation 2:1 PCIe Gen1/2/3 Clock Multiplexer Visit Renesas Electronics Corporation
    6V31023PGGI8 Renesas Electronics Corporation 2:1 PCIe Gen1/2/3 Clock Multiplexer Visit Renesas Electronics Corporation
    6V31023PGG Renesas Electronics Corporation 2:1 PCIe Gen1/2/3 Clock Multiplexer Visit Renesas Electronics Corporation
    6V31021NLGI Renesas Electronics Corporation 4-Output Low Power Fanout Buffer For PCIe Gen3 And 10G Ethernet Visit Renesas Electronics Corporation
    6V31021NLGI8 Renesas Electronics Corporation 4-Output Low Power Fanout Buffer For PCIe Gen3 And 10G Ethernet Visit Renesas Electronics Corporation
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    V3102 Price and Stock

    KEMET Corporation SCF25XV-310-2R3A004JH

    CMC 400UH 31A 2LN TH AEC-Q200
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    KEMET Corporation SCF25XV-310-2R3A004JV

    CMC 400UH 31A 2LN TH AEC-Q200
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    KEMET Corporation SCR25XV-310-2R3A004JV

    CMC 197UH 31A 2LN TH AEC-Q200
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    DigiKey SCR25XV-310-2R3A004JV Tray 118 1
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    KEMET Corporation SCT25XV-310-2R3A004JH

    CMC 130UH 31A 2LN TH AEC-Q200
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    KEMET Corporation SCR25XV-310-2R3A004JH

    CMC 197UH 31A 2LN TH AEC-Q200
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    V3102 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE S S U E 2 - FEBRUARY 1995 PIN CONFIGURATION 1 1 I WL PARTMARKING DETAIL FM M V3102-4C P 3 2 SOT23 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Power Dissipation at T amlj=25°C P«ot Operating and Storage Temperature Range


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    PDF V3102-4C 250MHz V/25V, 50MHz Ti7057fl

    FMMV105G

    Abstract: fmmv2109 ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824
    Text: E-LINE DIODE SPECIFICATIONS SCH O TTK Y BARRIER DIO DES These devices have a high breakdown voltage and ultra fast switching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications


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    PDF 10/iA ZC2800 ZC2811 ZC5800 ZC2800-ZC5800 ZC2811 OT-23 ZC2800E rZC2810E ZC2811E FMMV105G fmmv2109 ZC820 ZC821 ZC822 ZC823 ZC824

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


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    PDF 111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor

    ZC2800E

    Abstract: BAS70-05 BAS70-06 ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A ZC833A
    Text: SOT-23 TRANSISTORS & DIODES SCH O TTKY BARRIER DIO DES Type V br at Ir -1 0 j A min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC2800E ZC2810E ZC2811E ZC5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz


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    PDF OT-23 ZC2800E ZC2810E ZC2811E ZC5800E ZC2810E) Ir-10mA BAS70-05 BAS70-06 ZC2800-ZC5800 ZC830A ZC831A ZC832A ZC833A

    varactor 36z

    Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
    Text: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r


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    PDF Z1000 MZ4614 MZ4627 1N4099 M4L3052 M4L3056 1N5158 varactor 36z germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902

    V3102

    Abstract: No abstract text available
    Text: R.F. TRANSISTORS AND DIODES TABLE 2: E-LINE H YPERA BRU PT V A R IA B LE C A P A C IT A N C E TUNER D IO D ES Hyperabrupt tuning diodes m ay be used in any electronic tuning syste m to replace conventional tuning diodes. Rem ote tuning control, autom atic frequency control and octave tuning in mobile, air­


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    PDF ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A OT-23 BBY31 BBY40 V3102

    wiring diagram audio amplifier ic 6283

    Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
    Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor


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    PDF 4L3052 4L3056 wiring diagram audio amplifier ic 6283 germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838

    UAA2001

    Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
    Text: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­


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    PDF 0HF40 0HF60 0HF80 6FP10 6F100 70HF10 UAA2001 MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402

    FMMV105G

    Abstract: BAS70-05 BAS70-06 ZC2800E ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A
    Text: SOT-23 TRANSISTORS & DIODES SCHOTTKY BARRIER DIODES Type V br a t I r - 1 0 jA min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC 2800E ‘ ZC 2810E ZC 2811E ZC 5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz


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    PDF OT-23 ZC2800E ZC2810E ZC2811E ZC5800E ZC2810E) Ir-10mA BAS70-05 BAS70-06 -3/C25 FMMV105G ZC830A ZC831A ZC832A