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    2811E Search Results

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    2811E Price and Stock

    Texas Instruments TPS22811EVM

    TPS22811 EVALUATION MODULE FOR 2
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    DigiKey TPS22811EVM Box 13 1
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    Mouser Electronics TPS22811EVM 7
    • 1 $131.67
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    Texas Instruments TPS65281-1EVM

    EVALUATION BOARD FOR TPS65281
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    DigiKey TPS65281-1EVM Box 10 1
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    Skyworks Solutions Inc SKY85728-11EK1

    SKY85728-11 EVALUATION KIT
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    DigiKey SKY85728-11EK1 Box 3 1
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    Mouser Electronics SKY85728-11EK1
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    Richardson RFPD SKY85728-11EK1 1
    • 1 $103
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    Diodes Incorporated ZC2811ETA

    DIODE SCHOTTKY 15V 20MA SOT23-3
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    Flex Ltd PKM2811EPI

    DC DC CONVERTER 5V 83W
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    DigiKey PKM2811EPI Tray 120
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    Avnet Abacus PKM2811EPI 143 Weeks 120
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    2811E Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Ericsson Internal Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION E Prepared also Prepared (also subject subject responsible responsible ifif other other) EZIWSON EZIWSON Approved Approved 1 1 (1) (4) No. No. Checked Checked PKM 2000E PI series Direct Converters


    Original     		PDF 00152-EN/LZT146 22-A114 22-A115 J-STD-020C MIL-STD-202G

    SPRZ193

    Abstract: SM320F2812GHHMEP SM320F2810-EP
    Text: SM320F2810-EP, SM320F2811-EP, SM320F2812-EP SM320C2810-EP, SM320C2811-EP, SM320C2812-EP Digital Signal Processors Data Manual Literature Number: SGUS051A March 2004 − Revised October 2004 This document contains information on products in more than one phase of


    Original     		PDF SM320F2810-EP, SM320F2811-EP, SM320F2812-EP SM320C2810-EP, SM320C2811-EP, SM320C2812-EP SGUS051A SPRZ193 SM320F2812GHHMEP SM320F2810-EP

    FMMV105G

    Abstract: BAS70-05 BAS70-06 ZC2800E ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A
    Text: SOT-23 TRANSISTORS & DIODES SCHOTTKY BARRIER DIODES Type V br a t I r - 1 0 jA min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC 2800E ‘ ZC 2810E ZC 2811E ZC 5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz


    OCR Scan     		PDF OT-23 ZC2800E ZC2810E ZC2811E ZC5800E ZC2810E) Ir-10mA BAS70-05 BAS70-06 -3/C25 FMMV105G ZC830A ZC831A ZC832A

    Diode Marking z3 SOT-23

    Abstract: BAR99 FMMD6050 diode marking x6 Z6 DIODE BAL99 BAS16 BAV70 BAV74 BAV99
    Text: * FERRANTI semiconductors BAR99 High Speed Sw itching Diode DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film


    OCR Scan     		PDF BAR99 OT-23 BAR99 C9/C20 50MHz ZC830A ZC831A ZC832A Diode Marking z3 SOT-23 FMMD6050 diode marking x6 Z6 DIODE BAL99 BAS16 BAV70 BAV74 BAV99

    C6V2 ST

    Abstract: FMMD6050 diode marking w9 06 Diode Marking z3 SOT-23 BAV74-JA BAL99 BAR99 BAV70 BAV74 BZX84-C43
    Text: FERRANTI semiconductors BAV74 High Speed S w itc h in g Diode Pair Comrhon Cathode DESCRIPTION These devices are intended fo r high speed sw itching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film


    OCR Scan     		PDF BAV74 OT-23 BAV74 C9/C20 50MHz ZC830A ZC831A ZC832A ZC833A C6V2 ST FMMD6050 diode marking w9 06 Diode Marking z3 SOT-23 BAV74-JA BAL99 BAR99 BAV70 BZX84-C43

    FMMD914

    Abstract: FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70
    Text: * FERRANTI semiconductors F M M D 914 High Speed Sw itching Diode D E S C R IP TIO N These devices are intend ed fo r high speed s w itc h in g ap p licatio n s. Encapsulated in th e p op u lar S O T -2 3 package th ese devices are designed s p e c ific a lly fo r use in th in and th ic k film


    OCR Scan     		PDF OT-23 C9/C20 50MHz ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A FMMD914 FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70

    ZC825 SOT-23

    Abstract: diode marking w8 marking Z6 ZC800 ZC801 ZC802 ZC803 ZC804 ZC820 ZC821
    Text: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6a - ZC800 ZC820 SERIES FOR PCB MOUNTING. CHARACTERISTICS at 25°C ambient temperature . Nominal Capacitance in pF V „ = 2 V , f = 1 M Hz Type Glass DO-7 Plastic E-line Min. Nom. Max. Minimum Q a tV „ = 3 V


    OCR Scan     		PDF ZC800 ZC820 50MHz C2/C20, ZC801 ZC821 ZC802 ZC822 ZC825 SOT-23 diode marking w8 marking Z6 ZC803 ZC804

    5D marking DIODE BAS16

    Abstract: Zener Diode LF marking BAS 20 SOT23 DIODE MARKING CODE TW marking C20 sot-23 Y1 SOT-23 Ferranti Semiconductors diode marking w8 7y sot23 Diode Marking z3 SOT-23
    Text: FERRANTI i semiconductors BAS16 High Speed Sw itching Diode DESCRIPTION This device is intended for high speed switching applications. Encapsulated in the popular SOT-23 package this device is designed specifically for use in thin and thick film hybrid


    OCR Scan     		PDF BAS16 OT-23 C9/C20 50MHz ZC830A ZC831A ZC832A ZC833A 5D marking DIODE BAS16 Zener Diode LF marking BAS 20 SOT23 DIODE MARKING CODE TW marking C20 sot-23 Y1 SOT-23 Ferranti Semiconductors diode marking w8 7y sot23 Diode Marking z3 SOT-23

    MARKING YA SOT-23

    Abstract: w56 transistor MARKING YA J3 SOT-23 ZC831 sot-23 marking YA Diode Marking z3 SOT-23 DIODE W7 BZX84C12 BAR99 BAS16
    Text: I FERRANTI T IIsemiconductorsL BAW56 High Speed S w itc h in g D iode Pair C om m on A node DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in th in and th ick fiiim


    OCR Scan     		PDF BAW56 OT-23 BAW56 C9/C20 50MHz ZC830A ZC831A ZC832A MARKING YA SOT-23 w56 transistor MARKING YA J3 SOT-23 ZC831 sot-23 marking YA Diode Marking z3 SOT-23 DIODE W7 BZX84C12 BAR99 BAS16

    Diode Marking z3 SOT-23

    Abstract: dual diode marking A3 code J4 diode W6 13A Diode marking J6 transistors diode marking x6 sot-23 MARKING CODE j3 marking W6 diode BAV-99 j4 DIODE schottky sot 23
    Text: FERRANTI i semiconductors ZC830A Series S ilic o n Variable C ap a citan ce D iodes DESCRIPTION These silicon ion-im planted hyperabrupt tuning diodes are intended fo r use in HF, VH F and UHF electronic tuning and frequency control applications w here large capaci­


    OCR Scan     		PDF ZC830A OT-23 C9/C20 50MHz ZC831A ZC832A ZC833A Diode Marking z3 SOT-23 dual diode marking A3 code J4 diode W6 13A Diode marking J6 transistors diode marking x6 sot-23 MARKING CODE j3 marking W6 diode BAV-99 j4 DIODE schottky sot 23

    colour code diode zener

    Abstract: BAR99 s790 FMMD6050 ZC830 diode marking code W5 diode marking x6 SOT-23 MARKING w5 W9 diode ZC830B
    Text: H D 2A I FERRANTI HD3A nr 11semiconductors L H D 4A High Speed S w itching Diodes D ES C R IPTIO N These devices applications. are intend ed fo r high speed s w itch ing * Encapsulated in th e popular SOT-23 p ackage th e device is designed specifically fo r use in thin and th ic k film hybrid


    OCR Scan     		PDF OT-23 C9/c20 50MHz ZC830A ZC831A ZC832A ZC833A ZC834A colour code diode zener BAR99 s790 FMMD6050 ZC830 diode marking code W5 diode marking x6 SOT-23 MARKING w5 W9 diode ZC830B

    zc sot23

    Abstract: ZC2810E
    Text: ZC2800E 2811E ZC2810E ZC5800E SOT23 SCHOTTKY BARRIER DIODES PIN CONFIGURATION: PARTMARKING DETAILS ZC2800E - E6 ZC2810E - E7 2811E - E8 à^ ZC5800E - E9 ABSOLUTE M A X IM U M RATINGS PARAMETER SYM BO L M a x. P ow er D issipation at Tamb = 2 5 ° C PTOT


    OCR Scan     		PDF ZC2800E ZC2811E ZC2810E ZC5800E ZC5800E 2800E 2810E zc sot23

    AA121SJ03

    Abstract: LP141X5 lt141x LT141 samsung ITSV53C L133x2 TM121SV-02L04 AKM4543 tx36d CLEVO
    Text: I S .4 s u i B j ß e ; p o i ; e t u i | o 3 v lì? 7 ~jOU li? I £¿24 ~jlCU Ç423 L 356 I c w j m I 349T : ~I~7U~ÍT?ü~jÜU~ji~?U ~ p U ~|Tl ]c<09 |c3^< c33<]c329)c332JJ ?Tí-f = | VCC.CORE -À=IC14 y]c371 jc285Íc355 j.C4?S i C315 VCC.gORE J ~ 22UC.Z06)


    OCR Scan     		PDF c332JJ jc285 j220U/6 PR171 2N7002 AA121SJ03 LP141X5 lt141x LT141 samsung ITSV53C L133x2 TM121SV-02L04 AKM4543 tx36d CLEVO

    BAV99 Zener diode

    Abstract: Diode Marking z3 SOT-23 marking code J1 sot23 transistors bav99 BAV99a7 Marking c9 SOT23 marking w7 sot-23 BAL99 BAV70 BAV74
    Text: FERRANTI semiconductors BAV99 Hi gh Speed S w i t c h i n g Series D io de Pair DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film


    OCR Scan     		PDF BAV99 OT-23 BAV99 C9/C20 50MHz ZC830A ZC831A ZC832A BAV99 Zener diode Diode Marking z3 SOT-23 marking code J1 sot23 transistors bav99 BAV99a7 Marking c9 SOT23 marking w7 sot-23 BAL99 BAV70 BAV74

    zener diode marking E7

    Abstract: diode marking w8 marking J7 diode diode marking e8 marking W6 diode diode marking x6 FMMD6050 FMMD914 diode MARKING c9 BAR99
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Typ e Device Typ e Device m arking Device m arking BA L99 E2 B Z X 84-C 4 3 X6 B A R 99 E3 B Z X 84-C 47 X7 B A S 16 A3 FM M D 914 5D B A V 70 A4 FM M D 6050 5A B A V 74


    OCR Scan     		PDF OT-23 BAL99 BZX84-C43 BAR99 BZX84-C47 BAS16 FMMD914 BAV70 FMMD6050 BAV74 zener diode marking E7 diode marking w8 marking J7 diode diode marking e8 marking W6 diode diode marking x6 FMMD6050 FMMD914 diode MARKING c9 BAR99

    FMMD6050

    Abstract: E2 marking diode Diode Marking z3 SOT-23 BAR99 diode marking x6 Z6 DIODE BAL99 BAS16 SOT diode marking Z3 BAV74
    Text: FERRANTI semiconductors BAL99 High Speed S w itching Diode DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film


    OCR Scan     		PDF BAL99 OT-23 BAL99 C9/C20 50MHz ZC830A ZC831A ZC832A FMMD6050 E2 marking diode Diode Marking z3 SOT-23 BAR99 diode marking x6 Z6 DIODE BAS16 SOT diode marking Z3 BAV74