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    California Eastern Laboratories (CEL) UPC3218GV-EVAL

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    NEC Electronics Group UPC3218GV-E1

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    UPC3218GV Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPC3218GV NEC NECs GENERAL PURPOSE 5 V AGC AMPLIFIER Original PDF
    uPC3218GV NEC RF Amplifier, General purpose amplifier, Dual channel, Chip, 100 MHz, SSOP, 8-Pin Original PDF
    UPC3218GV-E1 NEC General purpose 5 V AGC amplifier. Original PDF
    uPC3218GV-E1 NEC General Purpose 5 V AGC Amplifier Original PDF
    UPC3218GV-E1-A California Eastern Laboratories 5 V AGC AMPLIFIER + VIDEO AMPLIFIER Original PDF
    UPC3218GV-EVAL California Eastern Laboratories Evaluation and Demonstration Boards and Kits, Programmers, Development Systems, EVAL BOARD FOR UPC3218GV Original PDF

    UPC3218GV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: GENERAL PURPOSE UPC3217GV 5 V AGC AMPLIFIER UPC3218GV UPC3217GV FEATURES VOLTAGE GAIN vs. AUTOMATIC GAIN CONTROL VOLTAGE • ON-CHIP LOW DISTORTION AMPLIFIER: IIP3 = -4 dBm at minimuim gain 60 Voltage Gain, GV dB • WIDE AGC DYNAMIC RANGE: GCR = 53 dB TYP


    Original     		PDF UPC3217GV UPC3218GV UPC3218GV

    automatic gain control

    Abstract: catv bridge amplifier UPC3217GV UPC3217GV-E1 UPC3218GV UPC3218GV-E1 UPC3219GV
    Text: GENERAL PURPOSE UPC3217GV 5 V AGC AMPLIFIER UPC3218GV VOLTAGE GAIN vs. AUTOMATIC GAIN CONTROL VOLTAGE* FEATURES 60 Voltage Gain, GV dB • ON-CHIP LOW DISTORTION AMPLIFIER: IIP3 = -4 dBm at minimuim gain • WIDE AGC DYNAMIC RANGE: GCR = 53 dB TYP • ON-CHIP VIDEO AMPLIFIER:


    Original     		PDF UPC3217GV UPC3218GV UPC3217GV UPC3218GV 1000pF UPC3217/18GV automatic gain control catv bridge amplifier UPC3217GV-E1 UPC3218GV-E1 UPC3219GV

    UPC3217GV

    Abstract: UPC3217GV-E1 UPC3218GV UPC3218GV-E1 UPC3219GV
    Text: NEC's GENERAL PURPOSE UPC3217GV 5 V AGC AMPLIFIER UPC3218GV VOLTAGE GAIN vs. AUTOMATIC GAIN CONTROL VOLTAGE* FEATURES 60 Voltage Gain, GV dB • ON-CHIP LOW DISTORTION AMPLIFIER: IIP3 = -4 dBm at minimuim gain • WIDE AGC DYNAMIC RANGE: GCR = 53 dB TYP


    Original     		PDF UPC3217GV UPC3218GV UPC3217GV UPC3218GV 1000pF UPC3217/18GV UPC3217GV-E1 UPC3218GV-E1 UPC3219GV

    UPC3217GV

    Abstract: UPC3217GV-E1-A UPC3218GV UPC3218GV-E1-A UPC3219GV uPC3217 Automatic Gain Control
    Text: 5 V AGC AMPLIFIER + UPC3217GV VIDEO AMPLIFIER UPC3218GV VOLTAGE GAIN vs. AUTOMATIC GAIN CONTROL VOLTAGE* • ON-CHIP LOW DISTORTION AMPLIFIER: IIP3 = -4 dBm at minimuim gain • ON-CHIP VIDEO AMPLIFIER: VOUT = 1.25 VP-P at single-ended output • PACKAGED IN 8 PIN SSOP SUITABLE FOR


    Original     		PDF UPC3217GV UPC3218GV UPC3217GV UPC3218GV UPC3217GV-E1-A UPC3218GV-E1-A UPC3219GV uPC3217 Automatic Gain Control

    low frequency automatic gain control

    Abstract: UPC3217GV UPC3217GV-E1-A UPC3218GV UPC3218GV-E1-A UPC3219GV Automatic Gain Control catv bridge amplifier
    Text: 5 V AGC AMPLIFIER + UPC3217GV VIDEO AMPLIFIER UPC3218GV VOLTAGE GAIN vs. AUTOMATIC GAIN CONTROL VOLTAGE* • ON-CHIP LOW DISTORTION AMPLIFIER: IIP3 = -4 dBm at minimuim gain • ON-CHIP VIDEO AMPLIFIER: VOUT = 1.25 VP-P at single-ended output • PACKAGED IN 8 PIN SSOP SUITABLE FOR


    Original     		PDF UPC3217GV UPC3218GV UPC3217GV UPC3218GV uPC32 17/18GV 1000pF UPC3217/18GV low frequency automatic gain control UPC3217GV-E1-A UPC3218GV-E1-A UPC3219GV Automatic Gain Control catv bridge amplifier

    low frequency automatic gain control

    Abstract: catv bridge amplifier 18GV
    Text: BIPOLAR ANALOG INTEGRATED CIRCUITS UPC3217GV / UPC3218GV 5 V AGC AMPLIFIER + VIDEO AMPLIFIER VOLTAGE GAIN vs. AUTOMATIC GAIN CONTROL VOLTAGE* • ON-CHIP LOW DISTORTION AMPLIFIER: IIP3 = -4 dBm at minimuim gain • ON-CHIP VIDEO AMPLIFIER: VOUT = 1.25 VP-P at single-ended output


    Original     		PDF UPC3217GV UPC3218GV UPC3217GV UPC3218GV uPC3217/18GV 1000pF low frequency automatic gain control catv bridge amplifier 18GV

    Untitled

    Abstract: No abstract text available
    Text: NEC's GENERAL PURPOSE UPC3217GV 5 V AGC AMPLIFIER UPC3218GV VOLTAGE GAIN vs. AUTOMATIC GAIN CONTROL VOLTAGE* FEATURES 60 Voltage Gain, GV dB • ON-CHIP LOW DISTORTION AMPLIFIER: IIP3 = -4 dBm at minimuim gain • WIDE AGC DYNAMIC RANGE: GCR = 53 dB TYP


    Original     		PDF UPC3217GV UPC3218GV UPC3217GV UPC3218GV am0603 1000pF UPC3217/18GV

    Untitled

    Abstract: No abstract text available
    Text: GENERAL PURPOSE UPC3217GV 5 V AGC AMPLIFIER UPC3218GV VOLTAGE GAIN vs. AUTOMATIC GAIN CONTROL VOLTAGE* FEATURES 60 Voltage Gain, GV dB • ON-CHIP LOW DISTORTION AMPLIFIER: IIP3 = -4 dBm at minimuim gain • WIDE AGC DYNAMIC RANGE: GCR = 53 dB TYP • ON-CHIP VIDEO AMPLIFIER:


    Original     		PDF UPC3217GV UPC3218GV UPC3217GV UPC3218GV

    mobile phone basic block diagram

    Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    ne3511s02 s2p

    Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
    Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan


    Original     		PDF 07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N

    617DB-1674

    Abstract: HP8970
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    nec b1007

    Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
    Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,


    Original     		PDF NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817

    3231 audio ic

    Abstract: nec 14 tv diagram 617DB-1674 PC3231GV
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3231GV GENERAL PURPOSE 5 V 100 MHz AGC AMPLIFIER DESCRIPTION The μPC3231GV is a silicon monolithic IC designed for use as AGC amplifier for digital CATV, cable modem and digital terrestrial systems. This IC consists of gain control amplifier and video amplifier.


    Original     		PDF PC3231GV PC3231GV 3231 audio ic nec 14 tv diagram 617DB-1674

    ic isl 887

    Abstract: 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03
    Text: RF & マイクロ波デバイス システムブロック www.renesas.com 2010.04 目 次 1. はじめに •··········································································································································· 3


    Original     		PDF PA86x PG2158T5K PC3218T5Y NES1823M-45, NES1823M-180, NES1823M-240, NES1823S-45, NES1823S-90 R09CA0001JJ0100 PX10020JJ42V0PF ic isl 887 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03

    26 sot-363 rf power amplifier

    Abstract: UPC3232TB upc8211 UPC3223TB QFN2020 uPC2710 s06 A UPC1678GV UPC2745TB UPC2747TB
    Text: NEC Silicon RFIC Amplifiers – Low Power, Wideband & SiGe/SiGeC Low Power Amplifiers Part Number Typical ELECTRICAL CHARACTERISTICS1 TA = 25°C Frequency Range VCC ICC NF Gain RLIN RLOUT P1dB ISOL @ 3dB (V) (mA) (dB) (dB) (dB) (dB) (dBm) (dB) down Package


    Original     		PDF UPC2745TB OT-363 UPC2746TB UPC2747TB UPC2748TB IIP32 UPC8190K DC-10 UPC8194K 26 sot-363 rf power amplifier UPC3232TB upc8211 UPC3223TB QFN2020 uPC2710 s06 A UPC1678GV

    SMD transistor M05

    Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
    Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE


    Original     		PDF 10/2M SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR

    mc10087f1

    Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
    Text: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.


    Original     		PDF IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059

    UPC8236

    Abstract: 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF G0706 PX10020EJ39V0PF UPC8236 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic