NE425S01
Abstract: NE425S01-T1 NE425S01-T1B
Text: PRELIMINARY DATA SHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE425S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.60 dB TYP at 12 GHz 24 • HIGH ASSOCIATED GAIN: 12.0 dB TYP at f = 12 GHz Noise Figure, NF dB
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NE425S01
NE425S01
NE425S01-T1
NE425S01-T1B
24-Hour
NE425S01-T1
NE425S01-T1B
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NE3505M04
Abstract: FL-240 NEC Ga FET marking L NE3505M04-T2 ne3505
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3505M04 L to C BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.4dB TYP. Ga=15.5dB TYP. @f=4GHz NF=0.35dB TYP. Ga=17dB TYP. @f=2.4GHz Reference Only
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NE3505M04
NE3505M04-T2
50pcs
Rn/50
NE3505M04
FL-240
NEC Ga FET marking L
NE3505M04-T2
ne3505
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NE34018 equivalent
Abstract: FET model AN1022 AN1033 NE34018 Alpha 1000 GaAsFET as 15-f
Text: California Eastern Laboratories APPLICATION NOTE AN1033 NonLinear HJ-FET Model Verification in a PCS Amplifier PCS Amplifier Design Part 3 I. Introduction Lower development costs and shorter times to market of telecommunication subsystems require effective and
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AN1033
AN1022
NE34018 equivalent
FET model
AN1022
AN1033
NE34018
Alpha 1000 GaAsFET
as 15-f
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mobile phone basic block diagram
Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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G0706
PX10020EJ41V0PF
mobile phone basic block diagram
PG2158T5K
2SC3357/NE85634
microwave Duplexer
NE5510279A
UPC8236
NE3517S03
UPG2156
NE662M04
SW SPDT
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NE3508M04
Abstract: Power Transisitor 100V 2A NE3508M04-A NE3508M04-T2 NE3508M04-T2-A transisitor 02 p 67
Text: PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3508M04 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.45dB TYP. Ga=14dB TYP. @f=2GHz, VDS=2V, ID=10mA - Flat-lead 4-pin tin-type super mini-mold M04 package (Pb-Free T. )
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NE3508M04
NE3508M04-A
50pcs
NE3508M04-T2
NE3508M04-T2-A
NE3508M04
Power Transisitor 100V 2A
NE3508M04-A
NE3508M04-T2
NE3508M04-T2-A
transisitor 02 p 67
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max 16801 pspice
Abstract: 40J100
Text: 0.4 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
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NE651R479A
IMT-2000,
NE6501R479A
IR35-00-2
24-Hour
max 16801 pspice
40J100
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ne3514s02
Abstract: NE3514 NE3514S02-T1C s2p marking t1c rogers 5880 HS350 k-band amplifier
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz • Micro-X plastic S02 package APPLICATIONS
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NE3514S02
NE3514S02-T1C
NE3514S02-T1C-A
NE3514S02-T1D
NE3514S02-T1D-A
NE3514S0anty
ne3514s02
NE3514
NE3514S02-T1C s2p
marking t1c
rogers 5880
HS350
k-band amplifier
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NE3517S03
Abstract: rt/duroid 5880 RT DUROID 5880 NE3517S03-A marking t1c rogers 5880 HS350 NE3517S03-T1D-A NE3517S03-T1C rt duroid
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS
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NE3517S03
NE3517S03-T1C
NE3517S03-T1C-A
NE3517S03-T1D
NE3517S03-T1D-A
NE3517S03
rt/duroid 5880
RT DUROID 5880
NE3517S03-A
marking t1c
rogers 5880
HS350
NE3517S03-T1D-A
NE3517S03-T1C
rt duroid
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NE3515S02
Abstract: transistor "micro-x" "marking" 3 NE3515S02-T1C-A ne3515 NE3515S02-T1D-A duroid 5880 RT DUROID 5880 X KU-BAND GAAS HS350 ir260
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S02 X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA
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NE3515S02
NE3515S02-T1C
NE3515S02-T1D
NE3515S02-T1C-A
NE3515S02-T1D-A
PG10708EJ01V0DS
NE3515S02
transistor "micro-x" "marking" 3
ne3515
duroid 5880
RT DUROID 5880
X KU-BAND GAAS
HS350
ir260
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UPG2118K
Abstract: mmic e3 NEC K 2500 Eastern power dissipation in power stage 20-PIN UPG2118K-E3 2118 QFN NEC
Text: NEC's 1.5W GaAs MMIC POWER AMPLIFIER UPG2118K FEATURES DESCRIPTION • E-MODE HJ-FET TECHNOLOGY NEC's UPG2118K is a 1.5W, 3 stage power amplifier developed primarily for DCS/PCS1800 applications. With modified external matching the UPG2118K can be tuned from 800 to 2500 MHz.
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UPG2118K
UPG2118K
DCS/PCS1800
20-PIN
1000pF
mmic e3
NEC K 2500
Eastern
power dissipation in power stage
UPG2118K-E3
2118 QFN NEC
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UPG2117K
Abstract: UPG2118K J FET RF Cascode Input upg2118
Text: NEC's VERSATILE 3V GSM UPG2117K GaAs MMIC POWER AMPLIFIER FEATURES DESCRIPTION • E-MODE HJ-FET TECHNOLOGY/SINGLE POSITIVE SUPPLY VOLTAGE • LOW VOLTAGE OPERATION: VDD = +3.2 V • HIGH EFFICIENCY: PAE = 57% TYP • 20 PIN 4 X 4 MM SQUARE MICRO LEAD PACKAGE
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UPG2117K
UPG2117K
10deg
UPG2117K-E3
20-pin
UPG2118K
J FET RF Cascode Input
upg2118
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GRM39B
Abstract: 10-PIN GRM39CH TFL0816-2N7 TFL0816-3N3 NEC K 2124
Text: PRELIMINARY DATA SHEET GaAs INTEGRATED CIRCUIT µPG2124TH L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2124TH is GaAs MMIC for PA driver amplifier with variable gain function which were developed for WCDMA and another L-band application. The device can operate with 2.85 V, having the high gain and low distortion.
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PG2124TH
PG2124TH
GRM39B
10-PIN
GRM39CH
TFL0816-2N7
TFL0816-3N3
NEC K 2124
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T6s MARKING
Abstract: No abstract text available
Text: GaAs HJ-FET INTEGRATED CIRCUIT PG2253T6S RF FRONT-END IC FOR BluetoothTM CLASS 1 DESCRIPTION The PG2253T6S is a RF front-end integrated circuit for Bluetooth Class 1 and includes TX/Bypass switch and a power amplifier with low-pass filter. And this device has no RF matching parts.
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PG2253T6S
PG2253T6S
16-pin
PG10761EJ01V0DS
T6s MARKING
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Untitled
Abstract: No abstract text available
Text: 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: POUT = +31.5 dBm TYP at VDS = 3.5 V, f = 900 MHz POUT = +32.5 dBm TYP at VDS = 3.5 V, f = 1900 MHz
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NE6510179A
24-Hour
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nec 2571 4 pin
Abstract: nec 2571 C10535E VP15-00-3
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2005TB L-BAND SINGLE CONTROL SPDT SWITCH DESCRIPTION The µPG2005TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 0.5 to 2.5 GHz, having the low
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PG2005TB
PG2005TB
nec 2571 4 pin
nec 2571
C10535E
VP15-00-3
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NE32584C-T1
Abstract: nec 3435 transistor am 4428
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.
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NE32584C
NE32584C-T1A
NE32584C-T1
nec 3435 transistor
am 4428
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nec 151
Abstract: transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor NE32900
Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons.
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NE32900
NE32900
nec 151
transistor NEC ka 42
NEC D 553 C
nec, hetero junction transistor
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 3 watt of output power 1/3 Duty pulse operation with high linear
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NE6510379A
NE6510379A
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x 1535 ce
Abstract: 0537
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The N E 651R 479A .is a 0.4 W G a A s HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 0.4 watt of output power CW with high linear gain, high
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NE651R479A
NE6510179A
NE6510379A.
x 1535 ce
0537
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NEC k 2134 transistor
Abstract: nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587 transistor NEC D 588 NEC m 2134 transistor P12778EJ1VODSOO transistor KU 612
Text: PRELIMINARY DATA SHEET_ M F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm
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NE24283B
NE24283B
NEC k 2134 transistor
nec k 3115
transistor NEC D 587
KU 612
NEC k 3115 transistor
NEC D 587
transistor NEC D 588
NEC m 2134 transistor
P12778EJ1VODSOO
transistor KU 612
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NEC K 2500
Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz
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NE34018
NE34018
NE34018-T1
NE34018-T2
NEC K 2500
OLS 049
1689I
DS 4069
k 3531 transistor
6323 GA
NEC 2905
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AM/SSC 9500 ic data
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET IV IF f " / h ETERO JUNCTION FIELD EFFECT TRANSISTOR / NE428M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE428M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.
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NE428M01
NE428M01
200//m
AM/SSC 9500 ic data
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET IV IF f / HETERO j u n c t io n f ie l d e f f e c t t r a n s is t o r / NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION N E 3 29 00 is H etero J u n ctio n F E T chip th a t utilizes the hetero ju n ctio n betw een S i-d op ed A IG aA s and un do pe d
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NE32900
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transistor d 2389
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ \|F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm
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NE24283B
NE24283B
transistor d 2389
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