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    UPA831TF Search Results

    UPA831TF Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    uPA831TF NEC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACK Original PDF
    UPA831TF NEC Twin transistors equipped with different model chips(6P small MM) Original PDF
    UPA831TF-T1 NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR Original PDF

    UPA831TF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UPA831TF

    Abstract: NE681 NE68130 NE856 NE85630 S21E UPA831TF-T1 UPA834TF 7371 802 transistor on 4409
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS LOW NOISE: Q1:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA 2.1 ± 0.1 1.25 ± 0.1 HIGH GAIN: Q1: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA •


    Original
    PDF NE856, NE681) UPA831TF UPA831TF UPA831TF-T1 NE85630 NE68130 UPA834TF 24-Hour NE681 NE68130 NE856 NE85630 S21E UPA831TF-T1 7371 802 transistor on 4409

    OF IC 7912

    Abstract: pt 9795 on 5295 transistor nec 14312 transistor UPA831TF lb 11885 NE681 NE68130 NE856 S21E
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm LOW NOISE: Q1:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA Package Outline TS06 2.1 ± 0.1 1.25 ± 0.1 Q2:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA


    Original
    PDF UPA834TF NE681, NE856) UPA834TF NE68130 UPA834TF-T1 NE85630 UPA831TF 24-Hour OF IC 7912 pt 9795 on 5295 transistor nec 14312 transistor lb 11885 NE681 NE68130 NE856 S21E

    transistor sr 13009

    Abstract: sr 13009 transistor d 13009 UPA831TF transistors W 5753 1997N apa831 ic 5219 8mm on 5297 transistor
    Text: PRELIMINARY DATA SH EET Silicon Transistor NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE DESCRIPTION PACKAGE DRAWINGS (Unit:mm) The ,uPA831TF has tw o different built-in transistors (Q1 and Q2) for tow noise am plification in the VHF band to UHF


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    PDF uPA831TF 2SC4226, 2SC4227) 2SC4226 2SC4227 transistor sr 13009 sr 13009 transistor d 13009 transistors W 5753 1997N apa831 ic 5219 8mm on 5297 transistor

    CD 5888 CB

    Abstract: transistor BU 5027 CD 5888 ic cd 5220 buffer ic transistor d 13009 UPA831TF CD 5888 cb ic cd 4847 pa831
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA831TF FEATURES Units in mm OUTLINE DIMENSIONS LOW NOISE: Package Outline TS06 Q1:NF = 1.2 dB TYP at f = 1 GHz, V ce = 3 V, Ic = 7 mA Q2:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, Ic = 7 mA


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    PDF UPA831TF NE856, NE681) PA831TF NE85630 NE68130 UPA831TF-T1 UPA834TF CD 5888 CB transistor BU 5027 CD 5888 ic cd 5220 buffer ic transistor d 13009 UPA831TF CD 5888 cb ic cd 4847 pa831

    CD 5888 CB

    Abstract: cd 4847 CD 5888 ic IC CD 3207 transistor d 13009 CD 8227 UPA831TF ha 12185 nt ap 6928 cd 5888
    Text: PRELIMINARY DATA SHEET UPA831TF NPN SILICON EPITAXIAL TWIN TRANSISTOR OUTLINE DIMENSIONS FEATURES LOW NOISE: Units in mm Package Outline TS06 (Top View) Q1 :NF = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA Q 2:N F = 1.4 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA


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    PDF UPA831TF NE856, NE681) NE85630 NE68130 UPA831TF-T1 24-Hour CD 5888 CB cd 4847 CD 5888 ic IC CD 3207 transistor d 13009 CD 8227 UPA831TF ha 12185 nt ap 6928 cd 5888

    CD 5888 CB

    Abstract: CD 5888 ic transistor d 13009 CD 8227 cd 4847 UPA831TF EB 13009 cd 4083 CD 5888 ap 6928
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA831TF OUTLINE DIMENSIONS FEATURES LOW NOISE: Units in mm Package O utline TS06 Q1 :NF = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA 2.1 ±0.1 Q 2:N F = 1.4 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA


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    PDF UPA831TF NE856, NE681) UPA831TF UPA831TF-T1 24-Hour CD 5888 CB CD 5888 ic transistor d 13009 CD 8227 cd 4847 EB 13009 cd 4083 CD 5888 ap 6928

    uPA63

    Abstract: UPA827TF UPA831TF NE685
    Text: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening


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    PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T URA810T UPA811T UPA812T uPA63 UPA827TF UPA831TF NE685

    UPA827TF

    Abstract: UPA833TF UPA802T UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363
    Text: Low N oise Bipolar Transistors * VCE V Ic TYP TYP (mA) (dB) Facon I S il MJjX M >j DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 13 3 5 7.5 8.0 120 35 (SOT-363) S06 D NE680 344 UPA801T 2.0 3 7 1.2 - 14 3 7 9.0 4.5 120 100 (SOT-363) S06 D NE856 346 UPA802T


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    PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T UPA827TF UPA833TF UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363