d480
Abstract: DS04-28501-2E LE128 MB40168 MB40178 QFP-44 R2R Ladder Resistor Network Fujitsu dac 02 18 pin
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-28501-2E ASSP Single Chip 8-Bit A/D and 9-Bit D/A Converter MB40168/MB40178 • DESCRIPTION The Fujitsu MB40168 and MB40178 are high speed, low power single chip A/D and D/A converters designed for video processing applications. The A/D converter has a resolution of 8 bits while the D/A converter has 9bit resolution. They are fabricated in Fujitsu’s advanced bipolar technology, and housed in a 48-pin plastic shrink
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DS04-28501-2E
MB40168/MB40178
MB40168
MB40178
48-pin
44-pin
F9703
d480
DS04-28501-2E
LE128
QFP-44
R2R Ladder Resistor Network
Fujitsu dac 02 18 pin
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NE32584C-T1
Abstract: nec 3435 transistor am 4428
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.
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NE32584C
NE32584C-T1A
NE32584C-T1
nec 3435 transistor
am 4428
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NEC 12 F
Abstract: F7805 D780308 D78030 sony KsS - 313
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD78052Y, 78053Y, 78054Y, 78055Y, 78056Y, 78058Y 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The /¿PD78052Y, 78053Y, 78054Y, 78055Y, 78056Y, and 78058Y versions add the l2C bus control function to the /¿PD78052, 78053, 78054, 78055, 78056, and 78058, and are suitable for application in AV products.
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uPD78052Y
uPD78053Y
uPD78054Y
uPD78055Y
uPD78056Y
uPD78058Y
PD78052Y,
78053Y,
78054Y,
78055Y,
NEC 12 F
F7805
D780308
D78030
sony KsS - 313
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT ¿iPG138GV L-BAND SPDT SWITCH DESCRIPTION The //PG 138G V is L-Band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital mobile communication system. It housed in an very small 8-pin SSOP that is smaller than usual 8-pin SOP and easy to install and contributes to
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uPG138GV
uPG138G
/jPG138GVJ
xPG138GV)
PG138GV-E1
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NEC 3536
Abstract: No abstract text available
Text: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz •
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NE76118
NE76118
NE76118-T1
NE76118-T2
NEC 3536
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NEC Electronics uPD Series
Abstract: nec 100 pin d780805
Text: DATA SHEET MOS INTEGRATED CIRCUIT jUPD78070AY 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The ¿¿PD78070AYis a limited-function product from which the on-chip ROM of the /iPD78078Y Subseries has been removed. Through interchangeable external ROM, program maintenance can be performed easily. Besides a high
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uPD78070AY
PD78070AYis
/iPD78078Y
PD78070A,
78robots
NEC Electronics uPD Series
nec 100 pin
d780805
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IC3208
Abstract: P12315EJ2V0DS00
Text: DATA SHEET GaAs INTEGRATED CIRCUIT ¿iPG105B-1 S-BAND LOW NOISE AMPLIFIER DESCRIPTION The ¿tPG105B-1 GaAs Am plifier has a very low noise characteristics in the S-band. This device has 3 stages FET amplifiers to achieve high linear gain. This amplifier is ideal for microwave communication system and the
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uPG105B-1
tPG105B-1
/xPG105B-1
IC3208
P12315EJ2V0DS00
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-454BA8C 4M-WORD BY 80-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-454BA80 is a 4,194,304 words by 80 bits synchronous dynamic RAM module on which 20 pieces of 16 M SDRAM : ¿¿PD4516421 are assembled.
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MC-454BA8C
80-BIT
MC-454BA80
uPD4516421
MC-454BA80-A10
MC-454BA80A12
MC-454BA80
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sot70
Abstract: B448 sot-70
Text: Philips Semiconductors Leadform options Power Thyristors and Triacs LEADFORM OPTIONS • These options require a special part number before ordering. • Contact your local Philips Semiconductors representative for pricing, minimum order quantities and part number.
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O-220)
8-05W.
OT186A
sot70
B448
sot-70
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uPG508
Abstract: upg508b
Text: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT //PG508B 13 GHz DIVIDE-BY-4 PRESCALER DESCRIPTION //PG508B is a GaAs divide-by-4 prescaler capable of operating up to 13 GHz. It is designed as the prescaler in the frequency synthesizers of microwave applications systems and measurement equipment.
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uPG508B
uPG508
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1J43
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR NEM0899F06-30 N-CHANNEL SILICON POWER MOSFET FOR UHF-TV TRANSMITTER POWER AMPLIFIER FEATURES PACKAGE DRAWING Unit: mm High output, high gain, high efficiency jjd x 2, • Wide band operation (f = 470 to 860 MHz)
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NEM0899F06-30
1J43
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT juPC8110GR 1 GHz DIRECT QUADRATURE MODULATOR FOR DIGITAL MOBILE COMMUNICATION D ES C R IP TIO N The //PC8110GR is a sillicon monolithic integrated circuit designed as 1 GHz direct quadrature modulator for
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uPC8110GR
//PC8110GR
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT //PG503B 9 GHz DIVIDE-BY-4 PRESCALER DESCRIPTION The //PG503B is a GaAs divide-by-4 prescaler capable of operating up to 9 GHz. It is intend to be used in the frequency synthesizers of microwave application systems and measurement
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uPG503B
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P1239
Abstract: No abstract text available
Text: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT ¿ÎPG171GV 1.9 GHz-BAND POWER AMPLIFIER FOR PHS DESCRIPTION The /¿PG171GV is a 2 stages GaAs FET power amplifier which was developed for PHS Personal Handy Phone System application. The device can operate with 3.0 V at 1.9 GHz-band, having the high efficiency and low
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uPG171GV
PG171GV
P1239
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ NEC / / MOS INTEGRATED CIRCUII MC-4516BC72 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The M C-4516BC72 is a 16,777,216 words by 72 bits synchronous dynam ic RAM module on which 18 p ieces of 64
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-4516B
16M-WORD
72-BIT
MC-4516BC72
uPD4564821
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101p1
Abstract: IC-3144
Text: DATA SHEET_ GaAs INTEGRATED CIRCUIT juPGIOOP, juPG101P WIDE BAND AMPLIFIER CHIPS DESCRIPTION ¿¿PG100P and ^PG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. ¿¿PG100P is low noise amplifier from 50 MHz to 3 GHz and ¿xPG101P is a medium power amplifier in the same
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uPG100P
uPG101P
PG100P
PG101P
xPG101P
/xPG101P
101p1
IC-3144
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NES2527B-30 30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The PACKAGE DIMENSIONS UNIT: mm NES2527B-30 is power GaAs FET which provides high output power and high gain in the 2.5 - 2.7 GHz band. Internal
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NES2527B-30
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NEC Ga FET marking L
Abstract: U/25/20/TN26/15/850/NE32984D
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm
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NE32984D
NE32984D
NE32984D-SL
NE32984Dr
NEC Ga FET marking L
U/25/20/TN26/15/850/NE32984D
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mmic marking c1b
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS uPC2791TB, uPC2792TB 5 V, SUPER MINIMOLD SILICON MMIC VHF-UHF WIDEBAND AMPLIFIER DESCRIPTION The ¿iPC2791TB and ¿iPC2792TB are silicon monolithic integrated circuits designed as 2nd IF buffer amplifier for
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uPC2791TB
uPC2792TB
iPC2791TB
iPC2792TB
iPC1675G,
iPC1676G
mmic marking c1b
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063 793
Abstract: transistor v63
Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain
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NE34018
NE34018
WS60-00-1
IR30-00-3
063 793
transistor v63
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT INFORMATION GaAs MES FET NEZ1011-8E 8 W Ku-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm T h e N E Z 1 0 1 1 -8 E is p o w e r G aA s F ET w hich p ro vid e s high gain, high e fficie n cy and high o u tp u t po w e r in K u-band.
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NEZ1011-8E
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UG501
Abstract: No abstract text available
Text: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT //PG501B 5 GHz DIVIDE-BY-2 STATIC PRESCALER DESCRIPTION The //PG501B is a divide-by-4 prescaler capable of operating up to 5 GHz. It is intend to be used in the frequency synthesizers of microwave application systems and measurement
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uPG501B
UG501
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Untitled
Abstract: No abstract text available
Text: _ DATA SHEET_ OCMOS FET PS7113-1A, -2A, PS7113L-1 A, -2A 6, 8 PIN DIP OCMOS FET 1-ch, 2-ch OCMOS FET DESCRIPTION T h e P S 7113-1A , -2 A and P S 7 113 L-1 A , -2A are solid state relays co n tain ing G a A s LED s on the light em ittin g side
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PS7113-1A,
PS7113L-1
113-1A
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HA2080
Abstract: ci LA 7804 ON NEC Electronics uPD Series 7804 inverter D78044 D78005
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD7 8 0 7 6 Y , 7 8 0 7 8 Y 8-BIT SINGLE-CHIP MICROCONTROLLERS DESCRIPTION The ¿¿PD78076Y and 7 8 0 7 8 Y add the l2C bus co n tro l fu n ctio n to the /¿PD78076 and 78078, and are su itab le for a pplica tio n in AV products.
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uPD78076Y
uPD78078Y
uPD78076
uPD78078
PD78P078Y)
HA2080
ci LA 7804 ON
NEC Electronics uPD Series
7804 inverter
D78044
D78005
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