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    Rochester Electronics LLC UPA804T-T1-A

    RF TRANS 2 NPN 12V 5GHZ 6-SUPER
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    DigiKey UPA804T-T1-A Bulk 195,000 1,249
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    Rochester Electronics LLC UPA802T-T1-A

    RF TRANS 2 NPN 10V 7GHZ SOT-363
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    DigiKey UPA802T-T1-A Bulk 86,104 650
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    Rochester Electronics LLC UPA801T-T1-A

    RF TRANS 2 NPN 12V 4.5GHZ SOT363
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    DigiKey UPA801T-T1-A Bulk 31,675 650
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    California Eastern Laboratories (CEL) UPA800T-T1

    RF TRANS 2 NPN 10V 8GHZ 6-SO
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    DigiKey UPA800T-T1 Cut Tape 6 1
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    UPA800T-T1 Reel 3,000
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    California Eastern Laboratories (CEL) UPA800T-A

    RF TRANS 2 NPN 10V 8GHZ SOT-363
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    UPA80 Datasheets (127)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    uPA80 NEC Semiconductor Selection Guide 1995 Original PDF
    uPA80 NEC Semiconductor Selection Guide Original PDF
    UPA80 NEC Silicon transistor array Scan PDF
    uPA800 NEC Semiconductor Selection Guide Original PDF
    UPA800T Unknown SMD, High Frequency Amplifier, 20V 35mA 110mW, Silicon NPN Transistor (integrated circuit) Original PDF
    UPA800T NEC HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD Original PDF
    UPA800T-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN HF 8GHZ SOT363 Original PDF
    UPA800TF NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    UPA800TF NEC 6-pin small MM high frequency double transistor array Original PDF
    uPA800TKB-T1 NEC High-frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 Elements) Mini Mold Original PDF
    UPA800T-T1 California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN HF FT=8GHZ SOT-363 Original PDF
    UPA800T-T1 NEC HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD Original PDF
    uPA800T-T1 NEC HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI Original PDF
    UPA800T-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN HF FT=8GHZ SOT363 Original PDF
    UPA800T-T1-A California Eastern Laboratories NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    UPA800T-T1B NEC 6-pin small MM high frequency double transistor array Original PDF
    UPA801 NEC NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD Original PDF
    uPA801 NEC Semiconductor Selection Guide Original PDF
    UPA801T California Eastern Laboratories Npn Silicon High Frequency Original PDF
    UPA801T NEC 6-pin small MM high-frequency double transistor Original PDF
    ...

    UPA80 Datasheets Context Search

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    transistor Bf 444

    Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA


    Original     		UPA801T NE856 100mA UPA801T 24-Hour transistor Bf 444 LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN S21E UPA801T-T1 PDF

    transistor 8730

    Abstract: UPA800T NPN Transistor 8440 NE680 S21E UPA800T-T1 TRANSISTOR C 6090 npn mje 3007 BJT 5240
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA800T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz • EXCELLENT LOW VOLTAGE, LOW CURRENT


    Original     		UPA800T NE680 UPA800T 24-Hour transistor 8730 NPN Transistor 8440 S21E UPA800T-T1 TRANSISTOR C 6090 npn mje 3007 BJT 5240 PDF

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1, Q2 IS 2.7e-16 BF 185 Parameters MJC XCJC Q1, Q2 UPA802TC UNITS Parameter Units 0.56 time 0.2 capacitance seconds farads henries ohms NF 1.02 CJS inductance VAF 15 VJS 0.75 resistance IKF 0.055


    Original     		UPA802TC 7e-16 77e-11 2e-12 8e-12 5e-12 24-Hour PDF

    NF NPN Silicon Power transistor TO-3

    Abstract: UPA800T bjt microwave 15 GHz npn bjt microwave GHz transistor mje 350 NE680 S21E UPA800T-T1 97 transistor
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA800T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz


    Original     		UPA800T NE680 UPA800T 24-Hour NF NPN Silicon Power transistor TO-3 bjt microwave 15 GHz npn bjt microwave GHz transistor mje 350 S21E UPA800T-T1 97 transistor PDF

    UA709

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA808TC FEATURES DESCRIPTION • SMALL PACKAGE OUTLINE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE Just 0.55 mm high • FLAT LEAD STYLE: Reduced lead inductance improves electrical


    Original     		OT-363 UPA808TC UPA808TC NE687 UPA808TC-T1, 24-Hour UA709 PDF

    transistor K 2937

    Abstract: TRANSISTOR C 6090 transistor 9527 transistor 9740 TRANSISTOR C 6090 npn BJT 5240 transistor k 4110 TRANSISTOR c 8050 1865-4 k 3531 transistor
    Text: SILICON TRANSISTOR UPA806T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • SMALL PACKAGE STYLE: 2 NE685 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz


    Original     		NE685 UPA806T UPA806T 24-Hour transistor K 2937 TRANSISTOR C 6090 transistor 9527 transistor 9740 TRANSISTOR C 6090 npn BJT 5240 transistor k 4110 TRANSISTOR c 8050 1865-4 k 3531 transistor PDF

    UPA802T

    Abstract: BD304 NE02132
    Text: Low Noise Bipolar Transistors ' •TV#’ VCE V S x n l* Ic TYP (mA) (dB) * VIP Hn te TYP MAX (WAJ Package Pfcg. Faxon Dwnand ücloaning Dee No. DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 3 .5 7.5 8.0 120 35 (SOT-363) S06 D MEVO UPA801T 2.0 3 7 1.2 -


    OCR Scan     		UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T OT-363) BD304 NE02132 PDF

    UPA800T

    Abstract: NPN silicon high frequency transistor NF NPN Silicon Power transistor TO-3
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA800T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: PACKAGE OUTLINE S06 (Top View) 2 N E680 Die in a 2 mm x 1.25 m m package LOW NOISE FIGURE: 2.1 ± 0.1 NF = 1.9 dB T Y P at 2 G Hz


    OCR Scan     		UPA800T UPA800T 24-Hour NPN silicon high frequency transistor NF NPN Silicon Power transistor TO-3 PDF

    All similar transistor

    Abstract: NE688 S21E UPA809TF transistor outline package 3 8003* transistor
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE OUTLINE: SOT-363 package measures just 2 mm x 1.25 mm • LOW HEIGHT PROFILE: Just 0.60 mm high • UPA809TF PACKAGE OUTLINE TS06 (Top View) 2.1 ± 0.1 1.25 ± 0.1


    Original     		OT-363 UPA809TF UPA809TF NE688 UPA809TF-T1, 24-Hour All similar transistor S21E transistor outline package 3 8003* transistor PDF

    NE856

    Abstract: S21E UPA801TF
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801TF OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE OUTLINE: SOT-363 package measures just 2.0 mm x 1.25 mm • LOW HEIGHT PROFILE: Just 0.60 mm high • HIGH COLLECTOR CURRENT: IC MAX = 100 mA PACKAGE OUTLINE TS06


    Original     		UPA801TF OT-363 UPA801TF NE856 UPA801TF-T1, 24-Hour S21E PDF

    S21E

    Abstract: UPA809T UPA809T-T1 NE688 npn dual emitter RF Transistor Drive Base BJT 38E-15 transistor mje 350
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA809T OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA


    Original     		UPA809T NE688 UPA809T 24-Hour S21E UPA809T-T1 npn dual emitter RF Transistor Drive Base BJT 38E-15 transistor mje 350 PDF

    NE856

    Abstract: S21E UPA801TC UPA801TC-T1
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA801TC FEATURES DESCRIPTION • SMALL PACKAGE OUTLINE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE Just 0.55 mm high • FLAT LEAD STYLE: Reduced lead inductance improves electrical


    Original     		UPA801TC OT-363 UPA801TC NE856 UPA801TC-T1, 24-Hour S21E UPA801TC-T1 PDF

    transistor 1249

    Abstract: UPA800T 1788
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA800T UPA800T NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1, Q2 Parameters Q1, Q2 IS BF 3.84e-16 MJC 0.5 124.9 XCJC NF 1.04 CJS VAF 11.87 VJS 0.75 IKF 0.027 MJS ISE 1e-14 FC 0.5 10e-12 NE 2.17 TF BR


    Original     		UPA800T UPA800T 84e-16 1e-14 01e-4 358e-12 21e-12 10e-12 635e-9 24-Hour transistor 1249 1788 PDF

    transistor 24 GHz

    Abstract: UPA807T-T1 10 ghz transistor UPA807T OF transistor 13 2 ghz transistor NE686 S21E transistor 9 GHz 5 GHZ TRANSISTOR
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA807T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE686 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1


    Original     		UPA807T NE686 UPA807T UPA807T-T1, 24-Hour transistor 24 GHz UPA807T-T1 10 ghz transistor OF transistor 13 2 ghz transistor S21E transistor 9 GHz 5 GHZ TRANSISTOR PDF

    c 5929 transistor

    Abstract: transistor k 2541 Transistor C 4927 741 LEM UPA802T 2955 transistor lem 723 733 transistor c 5299
    Text: SILICON TRANSISTOR UPA802T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: |S21E|2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH: fT = 7 GHz


    Original     		UPA802T NE681 UPA802T UPA802T-T1-A 24-Hour c 5929 transistor transistor k 2541 Transistor C 4927 741 LEM 2955 transistor lem 723 733 transistor c 5299 PDF

    TRANSISTOR C 6090

    Abstract: TRANSISTOR C 6090 npn transistor pt 6020 NE687 S21E UPA808T UPA808T-T1 UPA808T-T1-A ic 4790 A 7440 pin transistor
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA808T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE687 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.3 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 8.5 dB TYP at 2 GHz • LOW CURRENT OPERATION


    Original     		UPA808T NE687 UPA808T TRANSISTOR C 6090 TRANSISTOR C 6090 npn transistor pt 6020 S21E UPA808T-T1 UPA808T-T1-A ic 4790 A 7440 pin transistor PDF

    TRANSISTOR nf 842

    Abstract: TRANSISTOR c 5578 B TRANSISTOR c 5578 TRANSISTOR 5578 TRANSISTOR 534
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz HIGH GAIN: IS2 1 EI2 = 9.0 dB TYP at 1 GHz


    OCR Scan     		NE856 100mA UPA801T UPA801T UPA801T-T1 TRANSISTOR nf 842 TRANSISTOR c 5578 B TRANSISTOR c 5578 TRANSISTOR 5578 TRANSISTOR 534 PDF

    ls 7413 n

    Abstract: V 8623 transistor UPA800T HA 4016 13.562 mje 3007 BJT 5240 nec k 3115 NEC k 3115 transistor
    Text: UPA800T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: PACKAGE OUTLINE S06 (Top View) 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: • HIGH GAIN: • EXCELLENT LOW VOLTAGE, LOW CURRENT


    OCR Scan     		NE680 UPA800T UPA800T 24-Hour ls 7413 n V 8623 transistor HA 4016 13.562 mje 3007 BJT 5240 nec k 3115 NEC k 3115 transistor PDF

    sm 9142

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA801T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 6-PIN 2 ELEMENTS MINI MOLD The/xPA801T has built-in 2 low -voltage tran sistors w hich are designed PACKAGE DRAWINGS (U n it: m m)


    OCR Scan     		UPA801T The/xPA801T 2SC4226) uPA801T sm 9142 PDF

    transistor NEC D 587

    Abstract: 63950
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA806T MICROWAVE LOW NOISE AM PURER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD PACKAGE DRAWINGS FEATU RES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance


    OCR Scan     		UPA806T 2SC4959) PA806T PA806T-T1 transistor NEC D 587 63950 PDF

    UPA802T

    Abstract: 10 ghz transistor npn dual emitter RF Transistor NE681 S21E UPA802T-T1 2 ghz transistor
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • UPA802T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: |S21E|2 = 12 dB TYP at 1 GHz


    Original     		UPA802T NE681 UPA802T UPA802T-T1, 24-Hour 10 ghz transistor npn dual emitter RF Transistor S21E UPA802T-T1 2 ghz transistor PDF

    TRANSISTOR C 6090 npn

    Abstract: TRANSISTOR C 6090 transistor 9527 BJT 5240 bf 9804 A 3120 0532 8 pin 901 704 16 08 55 UPA806T-T1 NE685 S21E
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA806T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE685 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 8.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 12 GHz


    Original     		UPA806T NE685 UPA806T 24-Hour TRANSISTOR C 6090 npn TRANSISTOR C 6090 transistor 9527 BJT 5240 bf 9804 A 3120 0532 8 pin 901 704 16 08 55 UPA806T-T1 S21E PDF

    transistor s11 s12 s21 s22

    Abstract: UPA802T 741 LEM hfe 4538 c 3420 transistor Transistor C 4927 transistor c 5299 transistor zo 607 NE681 transistor j50
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • UPA802T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: |S21E|2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH: fT = 7 GHz


    Original     		UPA802T NE681 UPA802T UPA802T-T1 24-Hour transistor s11 s12 s21 s22 741 LEM hfe 4538 c 3420 transistor Transistor C 4927 transistor c 5299 transistor zo 607 transistor j50 PDF

    LB 1639

    Abstract: transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236
    Text: SILICON TRANSISTOR UPA801T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz


    Original     		UPA801T NE856 100mA UPA801T 24-Hour LB 1639 transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236 PDF