transistors c 2216

Abstract: UN2216 un2211 221Z 221D UN2213 221E UN2212 UN2214 UN2215
Contextual Info: Transistors with built-in Resistor / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Silicon NPN epitaxial planer transistor For digital circuits +0.25 0.65±0.15 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05

UN2211T1

Abstract: 2214T
Contextual Info: Order this data sheet by UN2211T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor TVansistor NPN Silicon Surface Mount TVansistor With M onolithic Bias Resistor N etw ork M UN2211T1 M UN2212T1 M UN2213T1 M UN2214T1 This new series of digital transistors is designed to replace a single device and

Contextual Info: Composite Transistors XP03389 Silicon NPN epitaxial planar transistor Tr1 Silicon PNP epitaxial planar transistor (Tr2) 0.20±0.05 5 5˚ 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 • Basic Part Number of Element • UNR2211 (UN2211) + UNR2118 (UN2118) 0.9±0.1

LMUN2211LT1G

Abstract: LMUN2212LT1G LMUN2213LT1G LMUN2214LT1G LMUN2215LT1G LMUN2216LT1G LMUN2230LT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network UN2211LT1 Series UN2211LT1G SERIES This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

2SD636

Abstract: SN1402 RT1N141C DTC124ES DTC114ES UN4211 DTC114EK RT1N441S DTC144ES 2SC2456
Contextual Info: - 162 - s « Type No. a « Manuf. = 3 SANYO 5 TOSHIBA m. NEC B H HITACHI S f FUJITSU i & T MATSUSHITA £ m MITSUBISHI □ — A ROHM 2SC 3398 = Ì* SN1402 UN2211 RT1N141C DTC114EK 2SC 3399 ^ h m RN1204 UN4213 RT1N441S DTC144ES H if RN1203 UN4212 RT1N241S DTC124ES

Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network UN2211LT1 Series UN2211LT1G SERIES This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

UN2224

Abstract: UN2112 UN2113 UN2114 UN2115 UN2116 UN2117 UN2118 UN2121 UN2122
Contextual Info: - 342 - MAÆfê M s « ffl & VcBO V UN2112 UN2113 UN2114 ÜN2115 UN2116 UN2117 UN2118 UN 2119 UN2121 UN2122 UN2123 UN2124 UN2210 UN2211 UN2212 UN2213 UN2214 UN2215 UN2216 UN2217 UN2218 UN2219 UN2221 UN2222 UN2223 UN2224 UN4110 UN4111 UN4112 UN4113 UN4114

221D

Abstract: 221L UNR2213 UNR2210 UNR2211 UNR2212 UNR2214 UNR2215 UNR2216 UNR2217
Contextual Info: Transistors with built-in Resistor / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Silicon NPN epitaxial planer transistor

XN04311

Abstract: UNR2111 UNR2211 XN4311 UN2111 UN2211
Contextual Info: Composite Transistors XN04311 XN4311 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • UNR2211 (UN2211) + UNR2111 (UN2111)

SOT-23 A8A

Abstract: MARKING A8C SOT-23 LMUN2211LT1 LMUN2211L LMUN2211LT1G LMUN2212LT1G LMUN2213LT1G LMUN2214LT1G LMUN2215LT1G LMUN2216LT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network UN2211LT1 Series UN2211LT1 SERIES This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network UN2211LT1 Series UN2211LT1G SERIES This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

221D

Abstract: UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218
Contextual Info: Transistors with built-in Resistor / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Silicon NPN epitaxial planer transistor

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01211 (XN1211) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 2 0.4±0.2 • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor)

Contextual Info: Composite Transistors UP04311 Silicon NPN epitaxial planar transistor Tr1 Silicon PNP epitaxial planar transistor (Tr2) 4 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 Display at No.1 lead 5˚ • Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Symbol Rating

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06211 (XP6211) Silicon NPN epitaxial planar type 0.2±0.05 • Features 6 Unit: mm (0.425) For switching/digital circuits 5 0.12+0.05 –0.02 4 5˚ 0.2±0.1 1.25±0.10 2.1±0.1

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

UN2211

Abstract: UNR2211 XN01211 XN1211
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01211 (XN1211) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10 –0.05

UNR2111

Abstract: UNR2211 XN0A311 XN1A311 UN2111 UN2211
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0A311 (XN1A311) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For switching M Di ain sc te on na tin nc ue e/ d 2.90+0.20 –0.05

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

22-16l

Abstract: UN2211LT1 UN2212LT1 2216L N2233LT1 22-16lT A8K resistor 2231LT1 transistor A8E UN2214LT1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA B ias Resistor Transistor UN2211LT1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its

UN2211

Abstract: UNR2211 XN01211 XN1211
Contextual Info: Composite Transistors XN01211 XN1211 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 2 0.4±0.2 • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half