Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01212 Silicon NPN epitaxial planar type For digital circuits • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Basic Part Number • UNR2212 x 2 Parameter
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2002/95/EC)
XP01212
UNR2212
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XP01212
Abstract: UNR2212
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01212 Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package ■ Features ■ Basic Part Number • UNR2212 x 2 Parameter
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XP01212
UNR2212
XP01212
UNR2212
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ft 103
Abstract: LD-5461BS 1414C BTA136 D1555 TLP434A UN2112 UN2212 UNR2112 UNR2212
Text: Composite Transistors XN04312 XN4312 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • UNR2212 (UN2212) + UNR2112 (UN2112)
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XN04312
XN4312)
UNR2212
UN2212)
UNR2112
UN2112)
ft 103
LD-5461BS
1414C
BTA136
D1555
TLP434A
UN2112
UN2212
UNR2112
UNR2212
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PDF
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UNR2212
Abstract: XP01212
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01212 Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • UNR2212 x 2 • Code SMini5-G1 • Pin Name 1: Base (Tr1) 2: Emitter 3: Base (Tr2)
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2002/95/EC)
XP01212
UNR2212
UNR2212
XP01212
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UNR2212
Abstract: XP06212
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06212 Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package ■ Features ■ Basic Part Number • UNR2212 x 2 Parameter
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2002/95/EC)
XP06212
UNR2212
UNR2212
XP06212
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UNR2212
Abstract: UP04212
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04212 Silicon NPN epitaxial planar type For digital circuits 4 M Di ain sc te on na tin nc ue e/ d 5° (0.20) UNR2212 x 2 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 ue
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UP04212
UNR2212
UNR2212
UP04212
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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UN2112
Abstract: UN2212 UNR2112 UNR2212 XN0A312 XN1A312
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0A312 (XN1A312) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 2 1 (0.65) 0.30+0.10
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XN0A312
XN1A312)
UN2112
UN2212
UNR2112
UNR2212
XN0A312
XN1A312
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XN04312
Abstract: UN2112 UN2212 UNR2112 UNR2212 XN4312
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04312 (XN4312) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05
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2002/95/EC)
XN04312
XN4312)
UNR2212
UN2212)
UNR2112
UN2112)
XN04312
UN2112
UN2212
UNR2112
UNR2212
XN4312
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04312 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 4 M Di ain sc te on na tin nc ue e/ d • Features ■ Basic Part Number Rating Unit
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2002/95/EC)
UP04312
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04312 (XN4312) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm M Di ain sc te on na tin nc ue e/ d 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95)
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2002/95/EC)
XN04312
XN4312)
UNR2212
UN2212)
UNR2112
UN2112)
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UN2112
Abstract: UN2212 UNR2112 UNR2212 XP04312 XP4312
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04312 (XP4312) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 1.25±0.10 2.1±0.1 4 5˚ • Two elements incorporated into one package
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2002/95/EC)
XP04312
XP4312)
UNR2212
UN2212)
UNR2112
UN2112)
UN2112
UN2212
UNR2112
UNR2212
XP04312
XP4312
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IC DATE CODE
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP01212 Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • Two elements incorporated into one package (Transistors with built-in resistor)
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2002/95/EC)
UP01212
UNR2212
IC DATE CODE
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UNR2112
Abstract: UNR2212 UP04312
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04312 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits M Di ain sc te on na tin nc ue e/ d Collector-base voltage
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UP04312
UNR2112
UNR2212
UP04312
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UN2212
Abstract: UNR2212 XN01212 XN1212
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01212 (XN1212) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10 –0.05
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XN01212
XN1212)
UN2212
UNR2212
XN01212
XN1212
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UN2112
Abstract: UN2212 UNR2112 UNR2212 XP04312 XP4312
Text: Composite Transistors XP04312 XP4312 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 1.25±0.10 2.1±0.1 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor)
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XP04312
XP4312)
UNR2212
UN2212)
UNR2112
UN2112)
UN2112
UN2212
UNR2112
UNR2212
XP04312
XP4312
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PDF
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UNR2212
Abstract: XP04212
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04212 Silicon NPN epitaxial planar type For digital circuits • Package • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half
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2002/95/EC)
XP04212
UNR2212
UNR2212
XP04212
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UNR2210
Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ Th an W is k y Th e a pro ou
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UNR221x
UN221x
UNR2210
UNR2211
UNR2212
UNR2213
UNR2214
UNR2215
UNR2216
UNR2217
UNR2218
UNR2219
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UNR2212
Abstract: XN01212G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01212G Silicon NPN epitaxial planar type For switching/digital circuits • Package • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor)
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XN01212G
UNR2212
UNR2212
XN01212G
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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PDF
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UN2212
Abstract: UNR2212 XN04212 XN4212
Text: Composite Transistors XN04212 XN4212 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number 2.8+0.2 –0.3 6 (0.65) • Two elements incorporated into one package
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XN04212
XN4212)
UN2212
UNR2212
XN04212
XN4212
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UNR2210
Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and
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UNR221x
UN221x
UNR2210
UNR2211
UNR2212
UNR2213
UNR2214
UNR2215
UNR2216
UNR2217
UNR2218
UNR2219
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