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    Rochester Electronics LLC MUN2213T1

    TRANS PREBIAS NPN 50V 0.1A SC59
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    Rochester Electronics LLC MUN2213JT1G

    TRANS PREBIAS NPN 50V 0.1A SC59
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    onsemi SMUN2213T1G

    TRANS PREBIAS NPN 50V 0.1A SC59
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    New Advantage Corporation SMUN2213T1G 42,000 1
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    onsemi MMUN2213LT1G

    TRANS PREBIAS NPN 50V SOT23-3
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    MMUN2213LT1G Digi-Reel 1
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    Bristol Electronics MMUN2213LT1G 2,447
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    MMUN2213LT1G 2,125 45
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    Rochester Electronics MMUN2213LT1G 75,000 1
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    TME MMUN2213LT1G 1,054 25
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    ComSIT USA MMUN2213LT1G 2,535
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    New Advantage Corporation MMUN2213LT1G 93,000 1
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    onsemi MUN2213T1G

    TRANS PREBIAS NPN 50V 0.1A SC59
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    DigiKey MUN2213T1G Reel 9,000 3,000
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    MUN2213T1G Cut Tape 252 1
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    Mouser Electronics MUN2213T1G 20,945
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    MUN2213T1G 4,461
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    Rochester Electronics MUN2213T1G 880,515 1
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    TME MUN2213T1G 1,610 20
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    UN2213 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    UN2213 Panasonic TRANS DIGITAL BJT NPN 50V 100MA 3MINI3-G1 Original PDF
    UN2213 Panasonic Silicon NPN Transistor with integrated resistor Original PDF
    UN2213 Panasonic Silicon NPN epitaxial planer transistor Original PDF
    UN2213 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    UN2213 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    UN2213 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UN2122

    Abstract: UN2213 UNR2122 UNR2213 XN04381 XN4381
    Text: Composite Transistors XN04381 XN4381 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • UNR2213 (UN2213) + UNR2122 (UN2122)


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    PDF XN04381 XN4381) UNR2213 UN2213) UNR2122 UN2122) UN2122 UN2213 UNR2122 UNR2213 XN04381 XN4381

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


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    PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    transistors c 2216

    Abstract: UN2216 un2211 221Z 221D UN2213 221E UN2212 UN2214 UN2215
    Text: Transistors with built-in Resistor / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Silicon NPN epitaxial planer transistor For digital circuits +0.25 0.65±0.15 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05


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    PDF E/221F/221K/221L/221M/221N/221T/221V/221Z UN2211 UN2212 UN2213 UN2214 UN2215 UN2216 UN2217 UN2218 transistors c 2216 UN2216 un2211 221Z 221D UN2213 221E UN2212 UN2214 UN2215

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    UN2113

    Abstract: UN2213 UNR2113 UNR2213 XP04313 XP4313
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04313 (XP4313) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 1.25±0.10 2.1±0.1 4 5˚ • Two elements incorporated into one package


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    PDF 2002/95/EC) XP04313 XP4313) UNR2213 UN2213) UNR2113 UN2113) UN2113 UN2213 UNR2113 UNR2213 XP04313 XP4313

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04213 (XN4213) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number


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    PDF 2002/95/EC) XN04213 XN4213) UNR2213 UN2213)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01213 (XN1213) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 2 0.4±0.2 • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor)


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    PDF 2002/95/EC) XN01213 XN1213) UNR2213 UN2213)

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


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    PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    UN2213

    Abstract: UNR2213 XP06213 XP6213
    Text: Composite Transistors XP06213 XP6213 Silicon NPN epitaxial planar type (0.425) For switching/digital circuits 0.2±0.05 6 Unit: mm 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half


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    PDF XP06213 XP6213) UN2213 UNR2213 XP06213 XP6213

    UN2213

    Abstract: UNR2213 XN01213 XN1213
    Text: Composite Transistors XN01213 XN1213 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 2 0.4±0.2 • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half


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    PDF XN01213 XN1213) 10lues, UN2213 UNR2213 XN01213 XN1213

    UN2213

    Abstract: UNR2213 XP04213 XP4213
    Text: Composite Transistors XP04213 XP4213 Silicon NPN epitaxial planar type 0.2±0.05 6 Unit: mm (0.425) For switching/digital circuits 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half


    Original
    PDF XP04213 XP4213) UN2213 UNR2213 XP04213 XP4213

    UN2213

    Abstract: UNR2213 XP01213 XP1213
    Text: Composite Transistors XP01213 XP1213 Silicon NPN epitaxial planar type (0.425) For switching/digital circuits Unit: mm 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor)


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    PDF XP01213 XP1213) UN2213 UNR2213 XP01213 XP1213

    UNR2210

    Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ Th an W is k y Th e a pro ou


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    PDF 2002/95/EC) UNR221x UN221x UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219

    UNR2210

    Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and


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    PDF 2002/95/EC) UNR221x UN221x UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219

    UNR2210

    Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and


    Original
    PDF 2002/95/EC) UNR221x UN221x UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04313 (XP4313) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 1.25±0.10 2.1±0.1 4 5˚ • Two elements incorporated into one package


    Original
    PDF 2002/95/EC) XP04313 XP4313) UNR2213 UN2213) UNR2113 UN2113)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04213 (XP4213) Silicon NPN epitaxial planar type 0.2±0.05 6 Unit: mm (0.425) For switching/digital circuits 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package


    Original
    PDF 2002/95/EC) XP04213 XP4213) UNR2213 UN2213)

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    UN2211T1

    Abstract: 2214T
    Text: Order this data sheet by MUN2211T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor TVansistor NPN Silicon Surface Mount TVansistor With M onolithic Bias Resistor N etw ork M UN2211T1 M UN2212T1 M UN2213T1 M UN2214T1 This new series of digital transistors is designed to replace a single device and


    OCR Scan
    PDF MUN2211T1/D SC-59 2PHX31020F-3 UN2211T1 2214T

    UN2224

    Abstract: UN2112 UN2113 UN2114 UN2115 UN2116 UN2117 UN2118 UN2121 UN2122
    Text: - 342 - MAÆfê M s « ffl & VcBO V UN2112 UN2113 UN2114 ÜN2115 UN2116 UN2117 UN2118 UN 2119 UN2121 UN2122 UN2123 UN2124 UN2210 UN2211 UN2212 UN2213 UN2214 UN2215 UN2216 UN2217 UN2218 UN2219 UN2221 UN2222 UN2223 UN2224 UN4110 UN4111 UN4112 UN4113 UN4114


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    PDF UN2112 UN2113 UN2114 UN2115 UN2116 UN2117 UN2118 SC-59A) UN2221 UN2122 UN2224 UN2121 UN2122

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


    OCR Scan
    PDF 2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C

    22-16l

    Abstract: UN2211LT1 UN2212LT1 2216L N2233LT1 22-16lT A8K resistor 2231LT1 transistor A8E UN2214LT1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA B ias Resistor Transistor MMUN2211LT1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its


    OCR Scan
    PDF OT-23 MMUN2211LT1 22-16l UN2211LT1 UN2212LT1 2216L N2233LT1 22-16lT A8K resistor 2231LT1 transistor A8E UN2214LT1

    N2114

    Abstract: marking som 6pin N2213 AE 3PIN ZD43
    Text: S -5 b 7 § ^ 6 ÎS Ÿ / > i / z —V S Mini Type (6-pin) Package Outline * Transistors 0.425 mn m ID tO 1 O un CD 2 O L— Œ 3 S S ^ S ! ( 6 Ä i- ) A - y ^ - v li. S t# W S Í- M ( 3 ^ ) ¿ |5 li;/N " 7 X T 'h 7 > v 'X Í2 • f t ,1.25±0 1 • 4 ' ¿ " * f J& U / c K r f f i H ^


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    PDF