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    UES2402 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UES2402 Microsemi Rectifier Scan PDF
    UES2402 Microsemi Rectifiers, High Efficiency, 16A Center-Tap Scan PDF
    UES2402 Unitrode International Semiconductor Data Book 1981 Scan PDF

    UES2402 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BYW19-1000

    Abstract: BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200
    Text: 41892.6 - FO-012 CROSSREF 11/19/98 10:54 AM Page 1 Harris Semiconductor-An Industry Leader For More Information: Harris Semiconductor comprises one sector of Harris Harris Marketing Support and ask for extension #7820


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    PDF FO-012 1-800-4-HARRIS BYW19-1000 BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


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    PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


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    PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


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    PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    CTX12SL

    Abstract: CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200
    Text: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 10CTF30 10CTF40 10CTQ150 10CTQ150S 10DL2C41A 10DL2CZ47A 10GWJ2CZ47C 10MF2 10MQ040 10MQ060 10MQ090 10TQ035 10TQ045 11DF1 11DF2 11DF4


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    PDF 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 CTX12SL CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200

    CTX12S

    Abstract: CTX12SL CTX-12SL CTB34M FMPG3F BYV10-40 equivalent BAT42 equivalent STPS3045CW Equivalent BYV42-200 CTL22S
    Text: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST SMBYW01-200 16CPF20 BYW99W-200 10BF100 STTA112U 16CTQ100 STPS20H100CT 10BF20 SMBYW01-200 16CTQ100S 10BF40


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    PDF SMBYW01-200 16CPF20 BYW99W-200 10BF100 STTA112U 16CTQ100 STPS20H100CT 10BF20 16CTQ100S CTX12S CTX12SL CTX-12SL CTB34M FMPG3F BYV10-40 equivalent BAT42 equivalent STPS3045CW Equivalent BYV42-200 CTL22S

    CTX12S

    Abstract: CTX12SL BYV255-200 W210PIV400 SCHOTTKY BARRIER RECTIFIER 40A 15V MBR4015LWT smd schottky diode A2 SOD-123 BYV10-40 PSpice W210PIV-400 shottky barrier diode 100V 100A BYV52-200 equivalent
    Text: STMicroelectronics The world’s third largest microchip manufacturer. RECTIFIERS Designers Selection Guide USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT


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    PDF SGRECT/0802 CTX12S CTX12SL BYV255-200 W210PIV400 SCHOTTKY BARRIER RECTIFIER 40A 15V MBR4015LWT smd schottky diode A2 SOD-123 BYV10-40 PSpice W210PIV-400 shottky barrier diode 100V 100A BYV52-200 equivalent

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


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    PDF MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


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    PDF MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


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    PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    MUR1560 equivalent

    Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
    Text: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON


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    PDF MR852 VHE1401 VHE1402 VHE1403 VHE1404 VHE205 VHE210 MUR1560 equivalent 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


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    PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    1N6651

    Abstract: 1N6654 BYV32E-200 Sertech Labs UES2403 1N6708 1N6709
    Text: Microsemi Ultra Fast Rectifiers Part Number PPR1355 PPR1369 1N6708 1N6708R 1N6709 1N6709R UES1605CT UES1501 UES2401 UES1610CT UES1502 UES2402 UF1610 UES1615CT UES1503 UES2403 UF1615 BYV32E-200 UHVP2802 UES1504 UES2404 UF1620 UES1620CT UES1630CT UF1630 UHVP2804


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    PDF O-254 T0-220AC O-220AC T0-22 O-220 T0-220AB 1N6651 1N6654 BYV32E-200 Sertech Labs UES2403 1N6708 1N6709

    UES2402

    Abstract: UES2404 UES2401 UES2403
    Text: 16 Amp IJItra Fast FRectifiers u ES2^I o a u ES240' -c Dim. Inches M illim eter Minimum —B .390 .045 .180 .245 .550 .139 .100 A B C D E F G H J K L M N P R Maximum Minimum .415 .055 .190 .260 .650 .161 .135 .250 .580 .210 .022 .115 .040 .070 .110 - .500


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    PDF ES2401 O-220AB UES2401 UES2402 UES2403 UES2402 UES2404 UES2401 UES2403

    TP 2404

    Abstract: UES2403 10C1 UES2401 UES2402 UES2404
    Text: U ES2401-U ES2404 RECTIFIERS High Efficiency, 16A Center-Tap D E S C R IP T IO N The U E S 2 4 0 1 Series in the economical, convenient 1 0 -2 2 U A B package, is specifically designed for operation in power sw itching circuits to frequencies in excess of 100kHz. The series com bines


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    PDF T0-220AB UES2401 10-220AB 100kHz. UES2401 UES2402 UES2402 UES2403 UES2404 TP 2404 10C1 UES2404

    Untitled

    Abstract: No abstract text available
    Text: RECTIFIERS U ES2401-U ES2404 High Efficiency, 16A Center-Tap FEATURES • V e ry Low Fo rw a rd V oltag e • V e ry Fast R e co ve ry T im e s • E c o n o m ic a l, C o n v e n ie n t T 0 - 2 2 0 A B Package • Low T h e rm a l R e sista n c e • M e c h a n ic a lly Rugged


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    PDF ES2401-U ES2404 UES2401 UES2402 UES2403 UES2404

    Cross Reference power MOSFET

    Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
    Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258


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    PDF T0-204AA T0-204AE T0-220AB T0-220AC Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630

    USD1120

    Abstract: USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE 150A 100V gto UT347 USD1140 T0447 SES5702
    Text: SCHOTTKY RECTIFIERS PRODUCT SELECTION GUIDE - e Similar to DO-41 TO-247 TO-220AC TO-39 mwm i m m m •' f ö * i . ! Ì ■ _ / •0 41 äEEBIÄE j >*, mmm \ . i*SA :iw !: VrM • *ss«ki:; • f f i“ USD1120 .45 @ 1A 50A 1N5818 .55 @ 1A 25A USD1130 .475 @ 1A


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    PDF DO-41 O-220AC O-247 USD820 1N5817 1N5818 USD1120 USD1130 USD620 USD720 USD1120 USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE 150A 100V gto UT347 USD1140 T0447 SES5702

    UES1503

    Abstract: UES2403 UES1401 UES1402 UES1403 UES1404 UES1501 UES1502 UES1504 UES2402
    Text: je m it r o n ic r “ sem ic o n d u c to r s Semitronics Corp. RECTIFIERS High Efficiency, 8A t o - 22o a c ELECTRICAL SPECIFICATIONS Type UES1401 UES1402 UES1403 UES1404 ' Measured in circuit lF = 0.5A, lR = 1.OA, I REC = 0.25A Maximum Forward Voltage @


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    PDF to-22oac UES1401 UES1402 UES1403 UES1404 ES2401 UES2402 UES2403 UES2404 UES1503 UES1501 UES1502 UES1504

    2N2222A mps

    Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
    Text: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71


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    PDF 1N34A 1N55AB 1N100 1N102 1N103 1N104 1N107 1N108 1N111/ 1N117 2N2222A mps 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304

    BYT01-200

    Abstract: UF54002 RS8KT BYT30P800 MR918 UF54004 PLR818 BYW99P-150 BYW100-100 1N4946 cross reference
    Text: RECTIFIER DIODES CROSS REFERENCE INDUSTRY PART NUMBER 1N4942 1N4942GP 1N4944 1N4944GP 1N4946 1N4946GP 1N4947 1N4947GP 1N4948 1N4948GP 1N5615 1N5615GP 1N5617 1N5617GP 1N5619 1N5619GP 1N5621 1N5621GP 1N5623 1N5623GP BYD33D BYD33G BYD33J BYD33K BYD33M BYR29600


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    PDF 1N4942 1N4942GP 1N4944 1N4944GP 1N4946 1N4946GP 1N4947 1N4947GP 1N4948 1N4948GP BYT01-200 UF54002 RS8KT BYT30P800 MR918 UF54004 PLR818 BYW99P-150 BYW100-100 1N4946 cross reference

    ES2403

    Abstract: UES2403 UES2401 UES2402 ES240 Sine wave Puls circuit
    Text: UES2401-UES2403 RECTIFIERS High Efficiency, 16ACenter-Tap DESCRIPTION The U E S 2 4 0 1 S eries in the econ om ical, co nven ien t T 0 -2 2 0 A B package, is s p e cific a lly desig n ed for operation in power sw itchin g c irc u its to fre q u en cies in excess


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    PDF ES2401 ES2403 O-220AB UES2401 T0-220AB UES2401 ES2403 UES2403 UES2402 ES240 Sine wave Puls circuit

    UES2401

    Abstract: UES2402 UES2403 UES2404
    Text: 16 Amp Ultra Fast Rectifiers UES2401 - UES2404 Dim. Inches Millimeter Minimum .3 9 0 .0 4 5 .180 .2 4 5 .5 5 0 .139 .100 A B C D E F G H J K L M N P R -.5 0 0 .190 .014 .0 8 0 .015 .0 4 5 .0 9 0 Maximum Minimum .415 .0 5 5 .190 .2 6 0 .6 5 0 .161 .135


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    PDF UES2401 UES2404 O-220AB UES2401 UES2402 UES2403 UES24I UES2402 UES2403 UES2404