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    UES1501 Search Results

    UES1501 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UES1501 Microsemi Rectifier Scan PDF
    UES1501 Microsemi Rectifiers, High Efficiency, 16A Scan PDF
    UES1501 Microsemi 16 amp ultra fast rectifiers Scan PDF

    UES1501 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


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    PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


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    PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


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    PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    CTX12SL

    Abstract: CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200
    Text: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 10CTF30 10CTF40 10CTQ150 10CTQ150S 10DL2C41A 10DL2CZ47A 10GWJ2CZ47C 10MF2 10MQ040 10MQ060 10MQ090 10TQ035 10TQ045 11DF1 11DF2 11DF4


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    PDF 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 CTX12SL CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200

    CTX12S

    Abstract: CTX12SL CTX-12SL CTB34M FMPG3F BYV10-40 equivalent BAT42 equivalent STPS3045CW Equivalent BYV42-200 CTL22S
    Text: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST SMBYW01-200 16CPF20 BYW99W-200 10BF100 STTA112U 16CTQ100 STPS20H100CT 10BF20 SMBYW01-200 16CTQ100S 10BF40


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    PDF SMBYW01-200 16CPF20 BYW99W-200 10BF100 STTA112U 16CTQ100 STPS20H100CT 10BF20 16CTQ100S CTX12S CTX12SL CTX-12SL CTB34M FMPG3F BYV10-40 equivalent BAT42 equivalent STPS3045CW Equivalent BYV42-200 CTL22S

    scr 8a 200v

    Abstract: do213ab 50A 1200V SCR 5A 200V SCR die SCR 30A 100V USD635C 1n4436 US60A eh12a 1N1183
    Text: Product Guide Power Semiconductors Microsemi more than solutions - enabling possibilities R TM Microsemi Power Semiconductors Contents Selection Military Qualified


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    PDF 394hex 450sq. 678hex scr 8a 200v do213ab 50A 1200V SCR 5A 200V SCR die SCR 30A 100V USD635C 1n4436 US60A eh12a 1N1183

    uesi503

    Abstract: UES1503 UES1501 UES1502 UES1504
    Text: UES1501 UES1502 UES1503 UES1504 RECTIFIERS High Efficiency, 16A DESCRIPTION The U ES 15 00 Series, in the econom ical, convenient T 0 -2 20 package, is sp ecifica lly designed fo r operation in power s w itching circu its to frequ en cies in excess of 100kH z. The very low forward voltage and


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    PDF uesi503 ues1504 T0-220 UES1500 O-220 100kHz. UES1501 UES1502 UES1501 ES1502 uesi503 UES1503 UES1502 UES1504

    1N6651

    Abstract: 1N6654 BYV32E-200 Sertech Labs UES2403 1N6708 1N6709
    Text: Microsemi Ultra Fast Rectifiers Part Number PPR1355 PPR1369 1N6708 1N6708R 1N6709 1N6709R UES1605CT UES1501 UES2401 UES1610CT UES1502 UES2402 UF1610 UES1615CT UES1503 UES2403 UF1615 BYV32E-200 UHVP2802 UES1504 UES2404 UF1620 UES1620CT UES1630CT UF1630 UHVP2804


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    PDF O-254 T0-220AC O-220AC T0-22 O-220 T0-220AB 1N6651 1N6654 BYV32E-200 Sertech Labs UES2403 1N6708 1N6709

    ues1503

    Abstract: No abstract text available
    Text: UES1501 UES1502 UES1503 UES1504 RECTIFIERS High Efficiency, 16A FEATURES DESCRIPTION • Very Low Forward Voltage • Very Fast Recovery Times • Economical, Convenient T0-220 Package • Low Thermal Resistance • Mechanically Rugged The UES1500 Series, in the economical,


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    PDF UES1501 UES1502 UES1503 UES1504 T0-220 UES1500 O-220 100kHz. ues1503

    UES1502

    Abstract: T46A UES1501 UES1503 UES1504
    Text: 16 Amp Ultra Fast Rectifiers UES1501 - UES1504 — C Dim. Inches Minimum — B A B C D E F G H J K L M N P Base Cathode ? •ii, .3 9 0 .0 4 5 .180 .2 4 5 .5 5 0 .139 .100 -.5 0 0 .190 .014 .0 8 0 .0 2 8 .0 4 5 Millimeter Maximum Minimum .415 .0 5 5 .190


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    PDF UES1501 UES1504 T0-220AC UES1501 UES1502 UES1503 UES1502 T46A UES1503 UES1504

    TL 2272 R

    Abstract: to220 5 lead plastic UFN610 m7 rectifier diode
    Text: UNITRODE T2 CORP 9347963 U N I T R O O E CORP mT| 92D 0010720 10720 1 D - ?*?-< POWER MOSFET TRANSISTORS Hffilîi 200 Volt, 1.5 Ohm N-Channel UFN 612 UFN613 FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling


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    PDF UFN613 TL 2272 R to220 5 lead plastic UFN610 m7 rectifier diode

    UFN742

    Abstract: N-Channel mosfet 400v to220 2314Y UFN741
    Text: TS UNITRODE CORP 9347963 ë F | ‘i 3 M 7 cib3 DGlG7t.a b U N I T R O D E CORP 92D 10762 |~~ D T-" ^ ? V 3 POWER MOSFET TRANSISTORS 400 Volt, 0.55 Ohm N-Channel FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling


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    PDF UFN742 UFN743 N-Channel mosfet 400v to220 2314Y UFN741

    UFN633

    Abstract: UFN630 CIT-20
    Text: U N ITR O PE T S CORP 9347963 D EE UN I T R O D E CORP |^ B 4 7 ^ b 3 T o iQ 7 3 ? T T 92D Q 10732 POWER MOSFET TRANSISTORS 200 Volt, 0.4 Ohm N-Channel FE A T U R E S • Com pact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling


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    PDF UFN632 UFN633 UFN633 UFN630 CIT-20

    d773

    Abstract: diode sy 710 sy 710 diode
    Text: T2 UNITRODE CORP 9347963 Ï F | c]347i:ib3 □ OlOVL.fl 7 | ~ 92D UNITRODE CORP 10768 D r POWER MOSFET TRANSISTORS t S 500 Volt, 3.0 Ohm N-Channel UFN 822 UFN823 FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling


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    PDF UFN823 d773 diode sy 710 sy 710 diode

    1G747

    Abstract: No abstract text available
    Text: UNITRODE CO RP 9347963 TE TS UNITRODE CORP D eT n |347ib3 DE 92D 10744 □□10744 4 D T '7 1 -1 POWER MOSFET TRANSISTORS 400 Volt, 3.6 Ohm N-Channel FEATURES • Compact Plastic Package » Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown


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    PDF 347ib3 UFN712 UFN713 1G747

    UF1615

    Abstract: No abstract text available
    Text: Ultra Fast Recovery Rectifiers UF1610 - UF1620 —c Dim. Inches Minimum — B A B C D E F G H J K L M N P Base Cathode _L .3 9 0 .0 4 5 .180 .2 4 5 .5 5 0 .139 .100 -.5 0 0 .190 .014 .0 8 0 .0 2 8 .0 4 5 M illim eter Maximum Minimum .415 .0 5 5 .190


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    PDF UF1610 UF1620 O--220A UES1501 UES1502 MUR1510 UES1503 MUR1515 UES1504 UF1615

    USD935-50

    Abstract: No abstract text available
    Text: UNITRODE CORP | 9347963 UN I TR OD E □□IGTflb b | 92D CORP 10986 RECTIFIERS D ^ES5501 SES5502 SES5503 SES5504 High Efficiency, 16A F EATU RES • Very Low Forward Voltage • Very Fast Recovery T im es • Econom ical, C onvenient T 0 -2 2 0 Package • Low T herm al Resistance


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    PDF ES5501 SES5502 SES5503 SES5504 USD935-50

    Untitled

    Abstract: No abstract text available
    Text: UNITRODE T5 CORP 9347963 U N IT R O D E DeT | ^347^^3 0011DL.7 4 | 92D CORP 11067 D r '^ulD620 POWER SCHOTTKY RECTIFIERS USD635 USD640 USD645 12A Pk, up to 45V DESC R IPT IO N The U S D 6 0 0 series of S chottky power rectifiers Is ideally suited for output


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    PDF 0011DL ulD620 USD635 USD640 USD645 SD635 SD620

    USD945

    Abstract: TO-220 3 lead bend
    Text: UNITRO DE CORP 9347963 ~ " ~ “iS • D E | ^3*47^3 0011D77 92D U N I T R O D E CORP POWER SCHOTTKY RECTIFIERS 32A Pk, up to 45V 11077 T - O S -t Ü 5 d 920 U SD935 U SD940 USD945 DESCRIPTION FEATURES • Very Low Forward Voltage 0.5V max @ 16A • Reverse Transient Capability


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    PDF 0011D77 SD935 SD940 USD945 USD900 USD945 TO-220 3 lead bend

    UES1422

    Abstract: UES1420 UES1421 UES1423
    Text: 12 UNITRODE CORP 9347963 DE I ,ì347clb3 0D11031 UN I TRODE CORP 92D RECTIFIERS D U E S 1 4 2 0 -U E S 1 4 2 3 T -0 3 -/-7 High Efficiency, 8A FEATURES ° Low dynamic forward voltage • Very fast recovery times • Economical, convenient plastic package • Low thermal resistance


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    PDF 0D11031 UES1420 O-220, 100kHz. UES1422 UES1421 UES1423

    ufn730

    Abstract: UFN731
    Text: UNITRODE CORP 9347963 M | cî347cib3 DDlG7Sb UNITRODE CORP 92D 10756 POWER MOSFET TRANSISTORS UFN730 UFN731 UFN732 UFN733 400 Volt, 1.0 Ohm N-Channel FEATU R ES D E S C R IP T IO N • • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available.


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    PDF UFN730 UFN731 UFN732 UFN733

    fn720

    Abstract: No abstract text available
    Text: UNITRODE CORP »£§^347^^3 9347963 U N IT R OD E C ORP 92D 10750 0D1Q7S0 r v POWER MOSFET TRANSISTORS UFN720 UFN721 UFN722 UFN723 400 Volt, 1.8 Ohm N-Channel F EATU RES • C om pact Plastic Package • Fast S w itching • Low Drive Current • Ease of Paralleling


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    PDF UFN720 UFN721 UFN722 UFN723 fn720

    Cross Reference power MOSFET

    Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
    Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258


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    PDF T0-204AA T0-204AE T0-220AB T0-220AC Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630