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    UPA831TF Search Results

    UPA831TF Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    uPA831TF NEC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACK Original PDF
    UPA831TF NEC Twin transistors equipped with different model chips(6P small MM) Original PDF
    UPA831TF-T1 NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR Original PDF

    UPA831TF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UPA831TF

    Abstract: NE681 NE68130 NE856 NE85630 S21E UPA831TF-T1 UPA834TF 7371 802 transistor on 4409
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS LOW NOISE: Q1:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA 2.1 ± 0.1 1.25 ± 0.1 HIGH GAIN: Q1: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA •


    Original     		PDF NE856, NE681) UPA831TF UPA831TF UPA831TF-T1 NE85630 NE68130 UPA834TF 24-Hour NE681 NE68130 NE856 NE85630 S21E UPA831TF-T1 7371 802 transistor on 4409

    OF IC 7912

    Abstract: pt 9795 on 5295 transistor nec 14312 transistor UPA831TF lb 11885 NE681 NE68130 NE856 S21E
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm LOW NOISE: Q1:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA Package Outline TS06 2.1 ± 0.1 1.25 ± 0.1 Q2:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA


    Original     		PDF UPA834TF NE681, NE856) UPA834TF NE68130 UPA834TF-T1 NE85630 UPA831TF 24-Hour OF IC 7912 pt 9795 on 5295 transistor nec 14312 transistor lb 11885 NE681 NE68130 NE856 S21E

    transistor sr 13009

    Abstract: sr 13009 transistor d 13009 UPA831TF transistors W 5753 1997N apa831 ic 5219 8mm on 5297 transistor
    Text: PRELIMINARY DATA SH EET Silicon Transistor NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE DESCRIPTION PACKAGE DRAWINGS (Unit:mm) The ,uPA831TF has tw o different built-in transistors (Q1 and Q2) for tow noise am plification in the VHF band to UHF


    OCR Scan     		PDF uPA831TF 2SC4226, 2SC4227) 2SC4226 2SC4227 transistor sr 13009 sr 13009 transistor d 13009 transistors W 5753 1997N apa831 ic 5219 8mm on 5297 transistor

    CD 5888 CB

    Abstract: transistor BU 5027 CD 5888 ic cd 5220 buffer ic transistor d 13009 UPA831TF CD 5888 cb ic cd 4847 pa831
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA831TF FEATURES Units in mm OUTLINE DIMENSIONS LOW NOISE: Package Outline TS06 Q1:NF = 1.2 dB TYP at f = 1 GHz, V ce = 3 V, Ic = 7 mA Q2:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, Ic = 7 mA


    OCR Scan     		PDF UPA831TF NE856, NE681) PA831TF NE85630 NE68130 UPA831TF-T1 UPA834TF CD 5888 CB transistor BU 5027 CD 5888 ic cd 5220 buffer ic transistor d 13009 UPA831TF CD 5888 cb ic cd 4847 pa831

    CD 5888 CB

    Abstract: cd 4847 CD 5888 ic IC CD 3207 transistor d 13009 CD 8227 UPA831TF ha 12185 nt ap 6928 cd 5888
    Text: PRELIMINARY DATA SHEET UPA831TF NPN SILICON EPITAXIAL TWIN TRANSISTOR OUTLINE DIMENSIONS FEATURES LOW NOISE: Units in mm Package Outline TS06 (Top View) Q1 :NF = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA Q 2:N F = 1.4 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA


    OCR Scan     		PDF UPA831TF NE856, NE681) NE85630 NE68130 UPA831TF-T1 24-Hour CD 5888 CB cd 4847 CD 5888 ic IC CD 3207 transistor d 13009 CD 8227 UPA831TF ha 12185 nt ap 6928 cd 5888

    CD 5888 CB

    Abstract: CD 5888 ic transistor d 13009 CD 8227 cd 4847 UPA831TF EB 13009 cd 4083 CD 5888 ap 6928
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA831TF OUTLINE DIMENSIONS FEATURES LOW NOISE: Units in mm Package O utline TS06 Q1 :NF = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA 2.1 ±0.1 Q 2:N F = 1.4 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA


    OCR Scan     		PDF UPA831TF NE856, NE681) UPA831TF UPA831TF-T1 24-Hour CD 5888 CB CD 5888 ic transistor d 13009 CD 8227 cd 4847 EB 13009 cd 4083 CD 5888 ap 6928

    uPA63

    Abstract: UPA827TF UPA831TF NE685
    Text: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening


    OCR Scan     		PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T URA810T UPA811T UPA812T uPA63 UPA827TF UPA831TF NE685

    UPA827TF

    Abstract: UPA833TF UPA802T UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363
    Text: Low N oise Bipolar Transistors * VCE V Ic TYP TYP (mA) (dB) Facon I S il MJjX M >j DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 13 3 5 7.5 8.0 120 35 (SOT-363) S06 D NE680 344 UPA801T 2.0 3 7 1.2 - 14 3 7 9.0 4.5 120 100 (SOT-363) S06 D NE856 346 UPA802T


    OCR Scan     		PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T UPA827TF UPA833TF UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363