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    UPA828TF Search Results

    UPA828TF Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPA828TF NEC HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD Original PDF
    UPA828TF NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR Original PDF
    uPA828TF NEC HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC Original PDF
    UPA828TF-T1 NEC HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD Original PDF

    UPA828TF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ic 7809

    Abstract: OF IC 7809 UPA828TF-T1 NE687 S21E UPA828TF 3699 npn electrical characteristics IC 7809
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS Unit in mm • LOW NOISE: NF = 1.3 dB TYP at f = 2 GHz, VCE = 2 V, lc = 3 mA • HIGH GAIN: |S21E|2 • UPA828TF Package Outline TS06 (Top View) 2.1 ± 0.1 1.25 ± 0.1


    Original     		PDF UPA828TF UPA828TF UPA828TF-T1 24-Hour ic 7809 OF IC 7809 UPA828TF-T1 NE687 S21E 3699 npn electrical characteristics IC 7809

    BA 7312

    Abstract: ba 3822 ls NEC IC 5020 098 BA 6688 L em 6695 6 pin ic 6628 j 6815 transistor BA 5977 ha 13483 fr 3709
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA828TF OUTLINE DIMENSIONS Unit in mm LOW NOISE: P ackage O u tlin e TS06 (T o p View) NF = 1.3 dB TYP at f = 2 GHz, Vce = 2 V, Ic = 3 m A HIGH GAIN: |S 21 e |2 = 8.5 dB TYP at f = 2 GHz, V c e = 2 V, Ic = 20 m A


    OCR Scan     		PDF UPA828TF NE856 UPA828TF PA828TF PA828TF-T1 24-Hour BA 7312 ba 3822 ls NEC IC 5020 098 BA 6688 L em 6695 6 pin ic 6628 j 6815 transistor BA 5977 ha 13483 fr 3709

    nec 16312

    Abstract: ha 13463 SN 16880 8377 om 7082 B ic audio amplifier sn 7456 nec 8039 TRANSISTOR C 5706 9522 transistor fr 3709
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA828TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD FEATURES PACKAGE DRAWINGS (U nit: mm) Low noise NF = 1 .3 dB TYP. @ V ce = 2 V, Ic = 3 mA, f = 2 GHz


    OCR Scan     		PDF uPA828TF 2SC5184) /xPA828TF /xPA828TF-T1 nec 16312 ha 13463 SN 16880 8377 om 7082 B ic audio amplifier sn 7456 nec 8039 TRANSISTOR C 5706 9522 transistor fr 3709

    ha 13483

    Abstract: j 6815 transistor transistor 9647 LS 7405 NEC IC 5020 098
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA828TF OUTLINE DIMENSIONS Unit in mm LOW NOISE: Package O utline TS06 (Top View) NF = 1.3 dB TYP at f = 2 GHz, Vce = 2 V, Ic = 3 m A HIGH GAIN: |S 21 e |2 = 8.5 dB TYP at f = 2 GHz, V c e = 2 V, Ic = 20 m A


    OCR Scan     		PDF UPA828TF NE687 UPA828TF UPA828TF-T1 24-Hour ha 13483 j 6815 transistor transistor 9647 LS 7405 NEC IC 5020 098

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA828TF OUTLINE DIMENSIONS Unit in mm LOW NOISE: NF = 1.3 dB TYP at f = 2 GHz, V ce = 2 V, Ic = 3 mA Package Outline TS 06 (Top View) -* HIGH GAIN: 2.1 ±0.1 i ► r» — 1.25± 0


    OCR Scan     		PDF NE687 UPA828TF UPA828TF mirror59 UPA828TF-T1

    UPA827TF

    Abstract: UPA833TF NE685 UPA814T
    Text: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications gu ai VCE V 6 PIN SUPER MINI MOLD I Ic (mA) 1 1 Hk H (V) Ic (mA) TYP (dB) VCE : to . ’• » J ■ ■UHU '* m - w -"V. m SOT-363 STYLE NE696M01 2.0 2 1 1.9 9.5 2 1 13 9 NE698M01


    OCR Scan     		PDF NE696M01 NE698M01 NE699M01 UPA806T UPA807T UPA808T UPA809T UPA814T NE685 NE686 UPA827TF UPA833TF

    uPA63

    Abstract: UPA827TF UPA831TF NE685
    Text: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening


    OCR Scan     		PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T URA810T UPA811T UPA812T uPA63 UPA827TF UPA831TF NE685

    UPA827TF

    Abstract: UPA833TF UPA802T UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363
    Text: Low N oise Bipolar Transistors * VCE V Ic TYP TYP (mA) (dB) Facon I S il MJjX M >j DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 13 3 5 7.5 8.0 120 35 (SOT-363) S06 D NE680 344 UPA801T 2.0 3 7 1.2 - 14 3 7 9.0 4.5 120 100 (SOT-363) S06 D NE856 346 UPA802T


    OCR Scan     		PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T UPA827TF UPA833TF UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363