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    TRC 1003 Search Results

    TRC 1003 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    100324FM/B Rochester Electronics LLC 100324 - TTL to ECL Translator, 6 Func, Complementary Output, ECL - Dual marked (5962-9153001VYA) Visit Rochester Electronics LLC Buy
    100355QI Rochester Electronics LLC 100355 - Low Power Quad Multiplexer/Latch Visit Rochester Electronics LLC Buy
    100353QI Rochester Electronics LLC 100353 - D Flip-Flop, 100K Series, 1-Func, Positive Edge Triggered, 8-Bit, True Output, ECL, PQCC28 Visit Rochester Electronics LLC Buy
    100371SC Rochester Electronics LLC 100371 - Triple 4 input MUX Visit Rochester Electronics LLC Buy
    100324/VYA Rochester Electronics LLC 100324 - TTL to ECL Translator, 6 Func, Complementary Output, ECL - Dual marked (5962-9153001VYA) Visit Rochester Electronics LLC Buy

    TRC 1003 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DDR400

    Abstract: PC3200 NT5DS128M4CG-5T NT1GD72S4PC0FV-5T
    Text: NT1GD72S4PC0FV/NT2GD72S4NCOFV 1GB: 128M x 72 / 2GB: 256M x 72 Low Profile Registered DDR SDRAM DIMM 184pin Low Profile Registered DDR SDRAM DIMM Based on 128Mx4 DDR SDRAM C Die device Features • 184 Dual In-Line Registered Memory Module RDIMM • Registered DDR DIMM based on 90nm 512Mb Die C device


    Original     		NT1GD72S4PC0FV/NT2GD72S4NCOFV 184pin 128Mx4 512Mb 128Mx4 NT5DS128M4CG-5T) DDR400 PC3200 NT5DS128M4CG-5T NT1GD72S4PC0FV-5T PDF

    Untitled

    Abstract: No abstract text available
    Text: NT1GD72S4PC0FV/NT2GD72S4NCOFV 1GB: 128M x 72 / 2GB: 256M x 72 Low Profile Registered DDR SDRAM DIMM 184pin Low Profile Registered DDR SDRAM DIMM Based on 128Mx4 DDR SDRAM C Die device Features • 184 Dual In-Line Registered Memory Module RDIMM • Registered DDR DIMM based on 90nm 512Mb Die C device


    Original     		NT1GD72S4PC0FV/NT2GD72S4NCOFV 184pin 128Mx4 512Mb 128Mx4 NT5DS128M4CG-5T) PDF

    KM428C128

    Abstract: 428C128 256X8 CMOS RAM 428-C KM428C128-6
    Text: r PRELIMINARY v KM428C128 CMOS VIDEO RAM 1 28K X 8 Bit CMOS Video RAM FEATURES • Dual port Architecture 128K x 8 bits RAM port 256 x 8 bits SAM port • Performance - Speed Parameter RAM access tim e tRAc RAM access tim e (tcAc) RAM cycle tim e (tRc)


    OCR Scan     		KM428C128 125ns 150ns 100ns 180ns 428C128 40-PIN KM428C128 256X8 CMOS RAM 428-C KM428C128-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM416C1OOOA/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tRC KM416C1000A-6/A-L6/A-F6 60ns 15ns 110ns KM416C1OOOA-7/A-L7/A-F7 70ns 20ns 130ns KM416C1000A-8/A-L8/A-F8 80ns 20ns


    OCR Scan     		KM416C1OOOA/A-L/A-F KM416C1000A-6/A-L6/A-F6 110ns KM416C1OOOA-7/A-L7/A-F7 130ns KM416C1000A-8/A-L8/A-F8 150ns cycle/64ms cycle/128ms PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C1OOOA/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tRC 60ns 15ns 110ns KM416C1000A-7/A-L7/A-F7 70ns 20ns 130ns KM416C1000A-8/A-L8/A-F8 80ns 20ns 150ns KM416C1000A-6/A-L6/A-F6


    OCR Scan     		KM416C1OOOA/A-L/A-F KM416C1000A/A-L/A-F KM416C1 DQ1-DQ16 42-LEAD 44-LEAD PDF

    KM68B1003

    Abstract: No abstract text available
    Text: K M 64B 1003 \0 SAMSUNG ELECTRONICS 262,144 WORD X 4 Bit With ÜE APRIL 1992 GENERAL DESCRIPTION FEATURES The KM64B1003 is a 1,048,576-bit high­ speed static random access memory or­ ganized as 262,144 words by 4 bit. The KM64B1003 uses four common input


    OCR Scan     		KM64B1003 576-bit 400mil 32-pin KM64B1003 KM68B1003 PDF

    HY5116400A

    Abstract: No abstract text available
    Text: HY5 1 1 6 4 0 0 A S e r ie s •{H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating


    OCR Scan     		HY5116400A 04711JOOl 43c12 1AD23-10-MAY95 HY5116400AJ HY5116400ASLJ PDF

    hy534256s

    Abstract: pin diagram of ic 7493 HY534256 HY534256J circuit diagram of ic 7493 INTERNAL DIAGRAM OF IC 7493
    Text: HYUNDAI HY534256 Series SEMICONDUCTOR 256K X 4-bit CMOS DRAM DESCRIPTION The HY534256 is the new generation and fast dynamic RAM organized 262,144 x 4-bits. The HY534256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		HY534256 300mil 1AB03-30-APR93 HY534256S HY534256J pin diagram of ic 7493 HY534256J circuit diagram of ic 7493 INTERNAL DIAGRAM OF IC 7493 PDF

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI H Y 5 1 V 1 7 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY51V17400A HY51V17400A 1AD35-00-MA 4b750flà HY51V17400AJ HY51V17400ASU HY51V17400AT HY51V17400ASLT PDF

    hy5118160b

    Abstract: HY5118160BTC60 HY5118160BJC60 HY5118160BJC HY5118160BTC SDIS5 HYUNDAI car HY5118160BTC-60 5118160BJ HY5118160
    Text: HY5118160B Series •HYUNDAI 1 M x 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160B Is the new generation and fast dynam ic RAM organized 1,048.576 x 16-bit. The HY5118160B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY5118160B 16-bit 16-bit. 4b75GÃ 00047b5 1AD54-10-MAY95 HY5118160BTC60 HY5118160BJC60 HY5118160BJC HY5118160BTC SDIS5 HYUNDAI car HY5118160BTC-60 5118160BJ HY5118160 PDF

    HM401

    Abstract: BSC MML command
    Text: .uv ii y n Ai HY51V17400A Series 4M x 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400Ais the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY51V17400A HY51V17400Ais HY51V17400Ato 1AD35-00-MAY94 HY51V17400AJ HY51V17400ASU HY51V17400AT HY51V17400ASLT HM401 BSC MML command PDF

    Untitled

    Abstract: No abstract text available
    Text: »HYUNDAI HY514400B Series 1Mx 4-bit CMOS DRAM DESCRIPTION The HY514400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY514400B FEATURE00 1AC11-10-MAY95 HY514400BJ HY514400BLJ HY514400BSU PDF

    0170R

    Abstract: MC-422000A36BJ-80 MC422000A36FJ70 MC-422000A36FJ-80 MC-422000A36FJ MC-422000A36BJ MC-422000A36FJ-70
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-422000A32, 422000A36 SERIES 2 M-WORD BY 32-BIT, 2 M-WORD BY 36-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-422000A32 series is a 2 097 152 w ords by 32 bits dynam ic RAM m odule on which 16 pieces of


    OCR Scan     		MC-422000A32, 422000A36 32-BIT, 36-BIT MC-422000A32 uPD424400 MC-422000A36 iPD424400) fiPD421000) MC-422000A36BJ, 0170R MC-422000A36BJ-80 MC422000A36FJ70 MC-422000A36FJ-80 MC-422000A36FJ MC-422000A36BJ MC-422000A36FJ-70 PDF

    Untitled

    Abstract: No abstract text available
    Text: 51C64L LOW POWER 64K X 1 CHMOS DYNAMIC RAM 51C64L-10 51C64L-12 Maximum Access Time ns 100 120 Maximum CHMOS Standby Current (mA) 0.05 0.05 • Low Power Data Retention ■ Fully TTL Compatible Inputs and Outputs — S tandby current, C HM O S — 50/*A (m ax.)


    OCR Scan     		51C64L 51C64L-10 51C64L-12 51C64L PDF

    Z80 CPU PHYSICAL DIMENSIONS LCC

    Abstract: z8400a z80acpu TDA 120S Z80A CPU Z80A-CPU Zilog Z80A CPU TDA 2025
    Text: ZILOG INC DB dË | TTñUDMB DODflSMa 5 J~~ 9 9 8 4 0 4 3 Z I L O G INC 03E 0 8 2 4 2 Z8400 Military Z80 CPU Central Processing Unit 17; | ¿• U O y D ~r-W -n-oi Military Electrical Specification July 1985 FEATURES ■ The instruction set contains 158 instructions. The 78


    OCR Scan     		Z8400 lfl4043 00Qfl2b3 40-PIN 44-PIN MIL-M-38510 Z8400CMJ Z8400ACMJ 40-pln 44-pln Z80 CPU PHYSICAL DIMENSIONS LCC z8400a z80acpu TDA 120S Z80A CPU Z80A-CPU Zilog Z80A CPU TDA 2025 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-422000A32, 422000A36 SERIES 2 M-WORD BY 32-BIT, 2 M-WORD BY 36-BIT DYNAMIC RAM MODULE FAST PAGE MODE D escription The MC-422000A32 series is a 2 097 152 w ords by 32 bits dynam ic RAM m odule on which 16 pieces of


    OCR Scan     		MC-422000A32, 422000A36 32-BIT, 36-BIT MC-422000A32 mPD424400) MC-422000A36 /xPD424400> fiPD421000) 1111rfi PDF

    pw3sd

    Abstract: No abstract text available
    Text: - H Y U N D A HY514403B Series I 1M x 4-bit CMOS DRAM with 4CAS DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO) controls DQO,


    OCR Scan     		HY514403B 1AC15-10-MAY95 HY514403BJ HY514403BLJ HY514403BSLJ pw3sd PDF

    RAU27

    Abstract: rau2
    Text: "HYUNDAI HY51V4264B Series 256K x 16-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The HY51V42648 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CM O S process technology and advanced circuit design technique to achieve fast


    OCR Scan     		HY51V4264B 16-bit HY51V42648 400mil 40pin 4Q/44pin 08mWFLB_ 1AC30-10-MAY95 RAU27 rau2 PDF

    IC 1496 function

    Abstract: No abstract text available
    Text: IBM11S2360NN IBM11S2360NL 2M x 36 SODIMM Module Features • 7 2 -P in S m all O utline D ual-In -Lin e M e m o ry M o du le • Perform ance: I rac RAS Access Time All inputs & outputs a re T T L & C M O S com patible Fast P a g e M o d e a c c e ss cycle


    OCR Scan     		IBM11S2360NN IBM11S2360NL 110ns 130ns 03H7118 MMDJ08DSU-00 IBM11S2360NL IC 1496 function PDF

    rb414

    Abstract: KM44C1003
    Text: KM44C1003DT CMOS DR A M ELECTRONICS 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a fam ily of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power


    OCR Scan     		KM44C HHHHHHI-INMHHM01 KM44C1003DT rb414 KM44C1003 PDF

    nec 424800

    Abstract: ic 2716 ic2716 PD42S4800-70 424800-10 424800-80 TXXXXXXXXXX
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT jU P D 4 2 S 4 8 0 0 , 4 2 4 8 0 0 4 M -BIT D Y N A M IC R A M 512 K -W O R D B Y 8-BIT, F A S T P A G E M O D E D e s c rip tio n The /¿PD42S4800, 424800 are 524,288 words by 8 bits CMOS dynamic RAMs. The fast page mode capability


    OCR Scan     		uPD42S4800 uPD424800 PD42S4800 28-pin /iPD42S4800-60, PD42S4800-70, PD42S4800-80, PD42S4800-10, VP15-207-2 nec 424800 ic 2716 ic2716 PD42S4800-70 424800-10 424800-80 TXXXXXXXXXX PDF

    Untitled

    Abstract: No abstract text available
    Text: 51C65H HIGH PERFORMANCE STATIC COLUMN 64K X 1 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum Column Address Access Time (ns) • Static Column Mode Operation 51C65H-10 51C65H-12 100 120 55 65 ■ Fast “ Usable Speed’’ — C ontinuou s data rate ov e r 15 M H z


    OCR Scan     		51C65H 51C65H-10 51C65H-12 5lC65H PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5362203C2W/C2WG 2Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) ELECTRONICS DRAM MODULE KMM5362203C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5362203CW /CWG to KMM5362203C2W /C2W G caused by PCB revision .


    OCR Scan     		KMM5362203C2W/C2WG 2Mx36 1MX16 KMM5362203CW KMM5362203C2W KMM5362203C2W/C2WG PDF

    uc07

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 4 4 0 0 A S e r ie s IM X 4-bit CM O S DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		HY514400A 1AC07-30-MAY94 HY514400AJ HY514400AU HY514400AT HY514400ALT HY514400AR uc07 PDF