RAU27
Abstract: rau2
Text: "HYUNDAI HY51V4264B Series 256K x 16-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The HY51V42648 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CM O S process technology and advanced circuit design technique to achieve fast
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HY51V4264B
16-bit
HY51V42648
400mil
40pin
4Q/44pin
08mWFLB_
1AC30-10-MAY95
RAU27
rau2
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Untitled
Abstract: No abstract text available
Text: "HYUNDAI HY51V4264B Series 256K x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION T his fa m ily is a 4M bit dynam ic RAM organized 262,144 x 16-bit configuration with Extended Data O ut m ode C M O S DRAMs. Extended Data O ut mode
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16-bit
HY51V4264B
16-bits
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Untitled
Abstract: No abstract text available
Text: “H Y U N D A I HY51V4264B Series 256K X 16-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The HY51V4264B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design technique to achieve fast
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HY51V4264B
16-bit
400mil
40pin
40/44pin
4b750flfl
00G43D3
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do9-15
Abstract: TOT - 4301 do9-1 4880M D08-15 CH371 HY51V4264B
Text: HYUNDAI HY51V4264B Series 256Kx 16-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The HY51V4264B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design technique to achieve fast
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OCR Scan
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PDF
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HY51V4264B
16-bit
HV51V4264B
400mil
40pin
40/44pin
Q0D43G3
1AC30-10-MAY95
do9-15
TOT - 4301
do9-1
4880M
D08-15
CH371
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BEDO RAM
Abstract: hy5118160b HY512264 HY5117404 HY5118164B
Text: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE
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HY531000A.
HY534256A.
16-bit.
HY5216257.
x16-bit.
DB101-20-MAY95
BEDO RAM
hy5118160b
HY512264
HY5117404
HY5118164B
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AUO-PL321.60
Abstract: HY51V18164B HY514264 HY514260
Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP
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HY531000AS
HY531000ALS
HY531000AJ
HY531000ALJ
HY534256AS
HY534256ALS
HY534256AJ
HY534256ALJ
HY512260JC
HY512260LJC
AUO-PL321.60
HY51V18164B
HY514264
HY514260
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HY51V18164
Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC
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256Kx4)
256x8)
128Kx16)
HY534256AJ
HY534256ALJ
HY512800J
HY512800LJ
HY512800SLJ
HY512264JC
HY512264LJC
HY51V18164
HY5118164
HY514260
HY51V65400
HY51V17804CJ
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