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    TRANSISTORS BD 330 Search Results

    TRANSISTORS BD 330 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS BD 330 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IL311ANM

    Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
    Text: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.


    Original     		PDF

    PTH9M04

    Abstract: PTH9M04BD222TS2F333 PTH9M04BE222TS2F333 PTH9M04BC222TS2F333 PTH9M04BF471TS2F333 PTH9M04BB222TS2F333 PTH9M04BH222TS2F333 PTH9M04BH471TS2F333 PTH9M04BG222TS2F333 PTH9M04BE471TS2F333
    Text: PTH9L/M Series FEATURES • PTH9L/M provides an excellent temperature sensing ability, exhibiting a steep change in electrical resistivity near the temperature setting ■ PTH9M is suitable for power transistors, thyristors, amplifiers, etc. for overheat protection


    Original     		PDF TS2F333 TS2F333: TS2F330: CG01-I PTH9M04 PTH9M04BD222TS2F333 PTH9M04BE222TS2F333 PTH9M04BC222TS2F333 PTH9M04BF471TS2F333 PTH9M04BB222TS2F333 PTH9M04BH222TS2F333 PTH9M04BH471TS2F333 PTH9M04BG222TS2F333 PTH9M04BE471TS2F333

    PTH9M04

    Abstract: PTH9M04BF471TS2F333 transistors BC 557 PTH9M04BE222TS2F333 PTH9L04BH471TS2F330 PTH9L04 Thermistor 15k PTH9M04BE222TS2 PTH9M04BF471 PTH9L04BF222TS2F330
    Text: PTH9L/M Series FEATURES • PTH9L/M provides an excellent temperature sensing ability, exhibiting a steep change in electrical resistivity near the temperature setting ■ PTH9M is suitable for power transistors, thyristors, amplifiers, etc. for overheat protection


    Original     		PDF TS2F333 TS2F333: TS2F330: CG01-J PTH9M04 PTH9M04BF471TS2F333 transistors BC 557 PTH9M04BE222TS2F333 PTH9L04BH471TS2F330 PTH9L04 Thermistor 15k PTH9M04BE222TS2 PTH9M04BF471 PTH9L04BF222TS2F330

    BD NPN transistors

    Abstract: BD127 BD129 602 SOT din 125a
    Text: TELEFUNKEN ELECTRONIC TTIILilFdMKIK] electronic 17E D • ô ci5 0 D cib 0 0 0 ^ 3 BD 127 * BD tè8 • BD 129 CfWtrv« Technologie» T -33-07 Silicon NPN Planar Power Transistors Applications: General at high supply voltages Features: • Power dissipation 17.5 W


    OCR Scan     		PDF T-33-07 DIN41 BD NPN transistors BD127 BD129 602 SOT din 125a

    Untitled

    Abstract: No abstract text available
    Text: BD949F; BD951F BD953F; BD955F PHILIPS INTERNATIONAL SbE D I 7110fl2b 004310b ST3 « P H I N SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors each in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements are B D 9 5 0 F , B D 9 5 2 F , BD 954F and B D 956F.


    OCR Scan     		PDF BD949F; BD951F BD953F; BD955F 7110fl2b 004310b 7110aEb QDM3107

    BCW61BR

    Abstract: BCW61DR BCW61CR BCW61 BCW61A BCW61AR BCW61B BCW61C BCW61D S0T23
    Text: S0T23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW61 PARTMARKING DETAILS:BCW61A - BA BCW61AR - CA BCW61B - BB BCW61BR - CB BCW61C - BC BCW61CR - CC BCW61D - BD BCW61DR - CD ABSOLUTE MAXIMUM RATINGS PARAMETER SYM BOL C ollector-B ase V oltag e C o lle c to r-E m itte r V oltag e


    OCR Scan     		PDF S0T23 -BCW61A BCW61B BCW61C BCW61D BCW61AR BCW61BR BCW61CR BCW61DR BCW61 BCW61 BCW61A

    Untitled

    Abstract: No abstract text available
    Text: MOTO!ROILA Order this document BY MMBD110T1/D SEMICONDUCTOR TECHNICAL DATA M M BD 110T1 M M BD 330T1 M M BD 770T1 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF


    OCR Scan     		PDF MMBD110T1/D OT-323/SC-70 110T1 330T1 770T1 19A-02, OT-323/SC-70 MMBD110T1 MMBD330T1 MMBD770T1

    d844

    Abstract: Transistors BD 330
    Text: ^[ _ PHILIPS INTERNATIONAL BD840 BD842 BD844 SbE D • 7110fl2b 00M303L. 34T « P H I N T-33-l T SILICON PLANAR EPITAXIAL POWER TRANSISTORS P-N-P silicon transistors, in a plastic T 0-2 0 2 envelope, recommended for use in television circuits and


    OCR Scan     		PDF BD840 BD842 BD844 7110fl2b 00M303L. BD841 BD843. d844 Transistors BD 330

    MARKING 330D

    Abstract: 330d BD770DW marking BD diodes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBD110DWT1 MBD330DWT1 MBD770DWT1 Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages, th e new SOT-363 package is a solution which simplifies


    OCR Scan     		PDF OT-363 MBD110DWT1 MBD330DWT1 MBD770DWT1 419B-01, OT-363 MBD330DW MBD770DWT1 MARKING 330D 330d BD770DW marking BD diodes

    bc 540

    Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
    Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0


    OCR Scan     		PDF BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N

    45C8

    Abstract: n5880 TIP 2n3055 BD221 d44c3 PNP 2SD triac 206 N6306 2N648B BD224
    Text: Power Transistors • D EV IC E ■c Max v CEO Max PO LA RITY A V - hFE M in/M ax ff \ç v CE(sat Max Cd \q A V A »T Min pD(Max) T C =25°C MHz W PACK­ AGE 0.8 15 15 25 117 115 10 10 TO-66 TO-3 TO-3 TO-39 TO-39 5.0 5.0 5.0 5.0 1.0 4.0 4.0 4.0


    OCR Scan     		PDF 2N3054 2N3055 2N3055SD 2N3439 2N3440 2N3713 2N3714 2N3715 2N3716 2N3740 45C8 n5880 TIP 2n3055 BD221 d44c3 PNP 2SD triac 206 N6306 2N648B BD224

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document BY MMBD110T1/D SEMICONDUCTOR TECHNICAL DATA MMBD110T1 MMBD330T1 MMBD770T1 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF


    OCR Scan     		PDF MMBD110T1/D MMBD110T1 MMBD330T1 MMBD770T1 19A-02, OT-323/SC-70 110T1 330T1

    bpx28

    Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
    Text: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten


    OCR Scan     		PDF

    PNP 2SD

    Abstract: T1P61 2N3055 2N3055SD 2N3054 2N3439 2N3440 2N3713 BD224 2N3715
    Text: 1 SEMICONDUCTORS INC OTE D | fi!3bbSG 0D0DSÖ2 4 | Power Transistors •c D E V IC E Max v CEO M ax A v hFE M in / M a x <$ lç P O L A R IT Y Powered by ICminer.com A v CE sat M a x fti Iq V A »T M in p D (M a x) T C =25°C MHi W PACK­ AGE 2N 3054 2N 3055


    OCR Scan     		PDF 2N3054 2N3055 2N3055SD 2N3439 2N3440 2N3713 2N3714 2N3715 2N3716 2N3740 PNP 2SD T1P61 BD224

    HBF4727A

    Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
    Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product


    OCR Scan     		PDF

    BDW 16.24K5000-C2-5

    Abstract: No abstract text available
    Text: 2SC D • flSBSbQS DQQMMBB T H S I E 6 ot* NPN Silicon Planar Transistors BDW 25 BDY 12 SIEMENS AKTIENGESELLSCHAF 433 0-BDY 13 BDW 25, BDY 12, and BDY 13 are epitaxial NPN silicon planar power transistors in SOT 9 case 9 A 2 DIN 41875 . The collector is electrically connected to the case.


    OCR Scan     		PDF Q62702-D378 Q62702-D378-V4 Q62702-D378-V2 Q62702-D378-V1 Q60204-Y12 A23SbOS BDW 16.24K5000-C2-5

    TFK diodes BYW 76

    Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
    Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35


    OCR Scan     		PDF

    BU406

    Abstract: BU407 N-P-N SILICON POWER TRANSISTORS t317 texas transistors
    Text: TEXAS I N S T R -COPTO} ÔÔ61726 TEXAS ta INSTR DE | f l cltI17Bt. 003titi3S 62C 3 6 6 3 5 OPTO BU406, BU407 N-P-N SILICON POWER TRANSISTORS - T - 2 3 - U O C T O B E R 1 9 8 2 - R E V IS E D O C T O B E R 1 9 8 4 • 60 W a t 2 5 ° C Case Temperature


    OCR Scan     		PDF GG3bb35 BU406, BU407 110-Degree to-220ab BU406 BU407 300fis, 003bb3T N-P-N SILICON POWER TRANSISTORS t317 texas transistors

    J 3305

    Abstract: BD839 BD843 BD840 BD841 BD842 BD844 IEC134
    Text: BD839 BD841 BD843 PHILIPS I N T E RNATIONAL SbE J> • 7110fl2b 0043020 273 HiPHIN T-33 -OS' SILICON PLANAR EPITAXIAL POWER TRANSISTORS N-P-N silicon transistors, in a plastic T 0 -2 0 2 envelope, recommended fo r use in television circuits and audio applications.


    OCR Scan     		PDF BD839 BD841 BD843 7110fl2b T-3Z-05- T0-202 BD840, BD842 BD844. BD839 J 3305 BD843 BD840 BD841 BD844 IEC134

    diac D30

    Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551
    Text: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED


    OCR Scan     		PDF OT-23 C-120, conventN1711 2N1893 2N2102 2N2218A 2N2219A 2N3019 2N3503 2N3700 diac D30 db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551

    transistors bu 407

    Abstract: Transistors BD 330 bdx 330
    Text: TEXAS IN S T R -COPTO} ^2 DE | f l cltI17Bt. 003titi3S 62C 3 6 6 3 5 ÔÔ61726 TEXAS INSTR OPTO BU406, BU407 N-P-N SILICON POWER TRANSISTORS -T - 2 3 - U O C T O B E R 1 9 8 2 - R E V IS E D O C T O B E R 1 9 8 4 • 60 W a t 2 5 °C Case Temperature •


    OCR Scan     		PDF cltI17Bt. 003titi3S BU406, BU407 10-Degree transistors bu 407 Transistors BD 330 bdx 330

    MARKING 330D

    Abstract: BD330DW 330D marking iP sot363
    Text: MOTOROLA Order this document by MBD110DWT1/D SEMICONDUCTOR TECHNICAL DATA Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT-363 package is a solution which simplifies


    OCR Scan     		PDF MBD110DWT1/D OT-363 MBD110DW BD330DW MBD770DW 419B-01, OT-363 X43042F-0 MBD110DWT1 MARKING 330D 330D marking iP sot363

    Untitled

    Abstract: No abstract text available
    Text: BDT91F; BDT93F BDT95F PHILIPS INTERNATIONAL SbE D • 7 1 1 D Ô 2 b G G M 3 3 3 D b74 « P H I N SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. PNP complements are BDT92F, BDT94Fand BDT96F.


    OCR Scan     		PDF BDT91F; BDT93F BDT95F OT186 BDT92F, BDT94Fand BDT96F. OT186.

    BD 201F

    Abstract: No abstract text available
    Text: BD201F; BD203F; BDX77F PHILIPS INTERNATIONAL SbE D • 711002b 0042Û0Ô AMS ■ PHIN T '3 3 - O ^ SILICON EPITAXIAL POWER TRANSISTORS NPN Silicon power transistors in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements are B D 202F, BD204F and B D X 78F .


    OCR Scan     		PDF BD201F; BD203F; BDX77F 711002b BD204F 711005b T-33-09 BD 201F