Untitled
Abstract: No abstract text available
Text: S E IV ZS’NES wJ CZ>T O R • MPSA65 MMBTA65 PZTA65 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings
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MPSA65
MMBTA65
PZTA65
MPSA64
MPSA65
MMBTA65
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 142 NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, diver circuit >Built in bias resistor R i= 22kiî, R 2=47ki! TT n r Pin Configuration B C R 142 W Zs 1 =B II CO Q62702-C2259 Package o Marking Ordering Code
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Q62702-C2259
OT-23
0235b05
D12D7Hb
Q120747
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WF VQE 22 c
Abstract: CA3146E RCA CA3146E RCA-CA3118AT WF vqe 24 e ICAN-5296 wf vqe 24 f CA314T wf vqe 14 e CA3146AE
Text: G E SOLID STATE Dl D E | 3fl75Clfll G014b3fc> 1 | A rra y s ' CA3118, CA3146, CA3183 T 'H ^ ZS High-Voltage Transistor Arrays Features • Matched general-purpose transistors ■ Vgg matched + 5mV max. ■ Operation from DC to 120 MHz CA3118AT, T; CA3146AE, E
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G014b3k
CA3118,
CA3146,
CA3183
CA3118AT,
CA3146AE,
CA3183AE,
WF VQE 22 c
CA3146E RCA
CA3146E
RCA-CA3118AT
WF vqe 24 e
ICAN-5296
wf vqe 24 f
CA314T
wf vqe 14 e
CA3146AE
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7415 ic pin details
Abstract: C10535E NE52118 NE52118-T1
Text: PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52118 L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω
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NE52118
NE52118-T1
7415 ic pin details
C10535E
NE52118
NE52118-T1
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C10535E
Abstract: NE52318 NE52318-T1 NPN transistor 9418 26364
Text: PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52318 L to S BAND LOW NOISE, HIGH GAIN AMPLIFIER NPN GaAs HBT FEATURES • Ideal for low noise and high gain amplifier NF = 1.1 dB TYP., Ga = 16 dB TYP., MSG = 18.0 dB TYP. @ f = 2 GHz, VCE = 2.0 V, IC = 3 mA, ZS = ZL = 50 Ω
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NE52318
OT-343
NE52318-T1
C10535E
NE52318
NE52318-T1
NPN transistor 9418
26364
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transistor D 2394
Abstract: 2SD2576
Text: 2SD2167 2SD2394 / 2SD2576 Transistors I Power Transistor 31 ± 4 V , 2A 2SD2167 •F e a tu re s 1 ) Built-in zs n e r diode betw een collector and base. 2 ) Z en er diode has low voltage dispersion. 3 ) Strong protection aga inst reverse pow er surges due to low loads.
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2SD2167
2SD2394
2SD2576
2SD2167
-----2SD2576
cb--60V
94L-1098-0348)
transistor D 2394
2SD2576
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RCA-CA3086
Abstract: RCA CA3086 CA3086 RCA-CA3018 ICAN-5296 "rca application note" CA3086F I426 HTU8 CA3086 APPLICATION NOTE
Text: G E SOLID STATE DI m r ia y o • ■- D E | 3075001 D014t.l0 5 | ■ - - - - CA3086 — — —'■ ■■■— 'T'-H'S-ZS General-Purpose N-P-N Transistor Array T h re e Isolated T ran sisto rs and O ne D iffe re n tia lly C onnected T ran sisto r Pair
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D014tlD
CA3086
120MHz
120-MHz
ICAN-5296
RCA-CA3018
RCA-CA3086
I4260fij
92CS-t42Mfii
RCA CA3086
ICAN-5296
"rca application note"
CA3086F
I426
HTU8
CA3086 APPLICATION NOTE
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Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS INC Tñ DeJ t.*4S?S2S OOITIBT 3 'T^m*iS,' ZS /¿ P A I 4 3 6 H PNP SILICON LOW DESCRIPTION E P I T A X I A L . . P OWER TRANSISTOR . ARRAY SPEED' SWITCHING DARLINGTON > The ¡i PA1436H is an array of four dariington power tra n sisto rs. I t is
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uPA1436H
ODITI42
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THJU401
Abstract: THJJ300B
Text: " S P R AG UE /S EM IC ON D GROUP 13 D • 6513350 0003562 b ■ 93D 03582 TTF-ZV-ZS 8 5 1 4 0 1 9 SPRAGUE . S E M I C O N D S / ICS JUNCTION FIELD-EFFECT TRANSISTOR CHIPS N-Channel JFETs ELECTRICAL CHARACTERISTICS al Tfl = 25°C VGS ofl V(BR]GSS Limits Igss
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THJBC264A
THJBC264B
THJBC264C
THJBC264D
THJBF244A
THJBF244B
THJBF244C
THJBF246A
THJBF246B
THJBF246C
THJU401
THJJ300B
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Untitled
Abstract: No abstract text available
Text: 3GE P • 7^537 Q031SQ3 0 ■ 'T'-'ZS- 1 S C S -T H O M S O N ^ r a @ i p O T o ) 3D(gi 2 N 4014 S G S-THOMSON HIGH-VOLTAGE, HIGH CURRENT SWITCH DESC RIPTIO N The 2N4014 is a silicon planar epitaxial transistor in TO-18 metal case. It is a high-voltage, high current
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Q031SQ3
2N4014
7T2TS37
DQ31SQb
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PDF
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Untitled
Abstract: No abstract text available
Text: _8 3 6 8 6 0 2 S O L I T R Q N D E V I C E S SOLITRON DEVICES INC _ 95 D 02821 D T-JT-ZS' ~T5 » e | fl3t,flbD5 DGGaaai fl I NC E > fô @ E Q j) g F VER Y HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER D e v ic e s - ln c - N PN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR*
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051mm)
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Untitled
Abstract: No abstract text available
Text: A L LE GR O M I C R O S Y S T E M S 8 5 1 4 0 1 9 S P R A GU E. INC ^3 D • 0 S 0 M 3 3 Ô 0 0 0 3 S Ö 2 5 ■ AL 6R 93 D 0 3 5 8 2 'b'T-Z.^ZS S E M I C O N D S / ICS JUNCTION FIELD-EFFECT TRANSISTOR CHIPS N-Channel JFETs ELECTRICAL CHARACTERISTICS al TA = 25°C
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THJBC264A
THJBC264B
THJBC264C
THJBC264D
THJBF244A
THJBF244B
THJBF244C
THJBF246A
THJBF246B
THJBF246C
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PDF
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NPN pnp MATCHED PAIRS array
Abstract: LA 4451
Text: HFA3134, HFA3135 Data Sheet February 1998 Ultra High Frequency Matched Pair Transistors [ /Title HFA3 134, HFA31 35 /Subject (Ultra High Frequency Matche d Pair Transistors) /Autho r () /Keywords (Intersil Corporation, semiconductor, two, transistor array,
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HFA3134,
HFA3135
HFA31
HFA3134
HFA3135
NPN pnp MATCHED PAIRS array
LA 4451
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j358
Abstract: No abstract text available
Text: T1G4003532-FS 35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T1G4003532-FS
T1G4003532-FS
j358
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transistor BC 945
Abstract: BC 945 transistor sga-9189
Text: Preliminary Preliminary Product Description Stanford Microdevices’ SGA-9189 is a high performance amplifier designed for operation from DC to 3500 MHz. With optimal matching at 2 GHz, TOI=39 dBm and P1dB=26 dBm. This RF device uses the latest Silicon Germanium
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SGA-9189
SGA-9189
DC-3500
EDS-101497
transistor BC 945
BC 945 transistor
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vishay rf output power transistor
Abstract: tRANSISTOR 2.7 3.1 3.5 GHZ cw "RF Power Transistor" 35W amplifiers 600S100
Text: T1G4003532-FL 35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T1G4003532-FL
T1G4003532-FL
vishay rf output power transistor
tRANSISTOR 2.7 3.1 3.5 GHZ cw
"RF Power Transistor"
35W amplifiers
600S100
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2gma
Abstract: Q62702-F938 121-996
Text: BFR 35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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OT-23
Q62702-F938
S21/S12|
Dec-12-1996
2gma
Q62702-F938
121-996
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Untitled
Abstract: No abstract text available
Text: BFR 35AP NPN Silicon RF Transistor 3 For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 0.5 mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 35AP
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VPS05161
OT-23
Oct-13-1999
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1090mhz
Abstract: JESD22-A114 PRA1000
Text: PRELIMINARY Long & Short Pulse 960-1215Mz 1025-1150MHz 1030-1090MHz PRA1000 300 Watt, 36V, Pulsed LDMOS RF Power Transistor DME, TACAN, TCAS, MODE S, Introduction Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: Sym Value Unit
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960-1215Mz
1025-1150MHz
1030-1090MHz
PRA1000
PRA1000
52-j1
1090mhz
JESD22-A114
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Untitled
Abstract: No abstract text available
Text: T1G3000532-SM 5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T1G3000532-SM
T1G3000532-SM
30MHz
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Untitled
Abstract: No abstract text available
Text: T1G3000532-SM 5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T1G3000532-SM
T1G3000532-SM
30MHz
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Untitled
Abstract: No abstract text available
Text: TGF3015-SM 10W, 32V, 0.03 – 3 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Land mobile and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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TGF3015-SM
TGF3015-SM
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Untitled
Abstract: No abstract text available
Text: BFR 35AP NPN Silicon RF Transistor 3 For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR 35AP Marking
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VPS05161
OT-23
900MHz
Nov-30-2000
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Untitled
Abstract: No abstract text available
Text: T2G6001528-SG 15W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T2G6001528-SG
T2G6001528-SG
TQGaN25
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