transistor SMD wm
Abstract: No abstract text available
Text: BUD636A wm m t Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RBSOA
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BUD636A
BUD636A
20-Jan-99
transistor SMD wm
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BUK102-50DL
Abstract: T0220AB
Text: PHILIPS INTERNATIONAL t.SE T> WM 711062b D0b3fll7 SHI • PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK102-50DL Logic level DESCRIPTION Monolithic temperature and overloadprotected logic level power
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711062b
BUK102-50DL
/llso25-C
liSt/lISL25
BUK102-50DL
T0220AB
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cd 1191 cb
Abstract: CD 1691 CB
Text: wm m t BFP67/BFP67R/BFP67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain per
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BFP67/BFP67R/BFP67W
BFP67
BFP67R
BFP67W
20-Jan-99
cd 1191 cb
CD 1691 CB
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BUK555-200A
Abstract: BUK555-200B M251 T0220AB
Text: PHILIPS INTERNATIONAL bSE D WM 711005t. DObMSSl 101 « P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode
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711005t.
BUK555-200A/B
T0220AB
BUK555
-200A
-200B
-ID/100
BUK555-200A
BUK555-200B
M251
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Untitled
Abstract: No abstract text available
Text: A N AMER PHILIPS/DISCRETE □bE D WM bb53T31 00150b! ? • MRB12350YR MAINTENANCE TYPE for new design use M RB11350Y X ' 33 - I S' PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in
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bb53T31
00150b!
MRB12350YR
RB11350Y)
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Untitled
Abstract: No abstract text available
Text: Wm/EREX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 KS8245A1 Single Darlington Transistor Module 15 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified KS524503 Sym bol Ratings Junction Temperature
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KS8245A1
Amperes/600
KS524503
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BUK445-100A
Abstract: 1E05 BUK445 BUK445-100B
Text: PHILIPS INTERNATIONAL bSE D WM 7110flSb O O b a W Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
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7110flSb
BUK445-1OOA/B
-SOT186
BUK445
-100A
-100B
BUK445-100A
1E05
BUK445-100B
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BUK445-100A
Abstract: BUK445-100B BT diode BUK445
Text: PHILIPS INT ERNATIONAL bSE D WM 7110flSb O O b a W Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched M ode Power Supplies
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BUK445-100A/B
-SOT186
BUK445-100A
BUK445-100B
BT diode
BUK445
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Silicon Transistor Corp
Abstract: 2950 transistor
Text: SILICON TRANSISTOR CORP SbE J> WM Ô2S4022 DOGG^fi fll? « S T C SILICON TRANSISTOR CORPORATION I Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 500 V o lts 0.3 Ohms TECHNICAL DATA SHEET ABSOLUTE MAXIMUM RATINGS
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2S4022
SNF40503
BreM0-078
ST102
MIL-S-19500
Silicon Transistor Corp
2950 transistor
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Untitled
Abstract: No abstract text available
Text: Wm/EREX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 KD324515 Dual Darlington Transistor Module 150 Amperes/600 Volts A bsolute Maximum Ratings, Tj = 25 °C unless otherwise specified Sym bol KD324515 Units Junction Temperature
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KD324515
Amperes/600
Conti800
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BLV99
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL b5E ]> WM 711005b 0Gb30ûb 771 M P H I N BLV99 Jl U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended fo r use as a driver-stage in base stations in the 90 0 M H z communications band. Features: • emitter-ballasting resistors fo r an optim um temperature profile
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711055b
0Gb30flb
BLV99
OT172A1)
OT172A1.
711DaSb
BLV99
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TRANSISTOR b77
Abstract: 4312.020 transistor tt 2222 BLV92
Text: PHILIPS INTERNATIONAL bSE J> WM 711DöSb DDb303S 50T BLV92 J U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use In mobile radio transmitters In the 9 0 0 M H z communications band. Features: • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile
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BLV92
OT-171)
TRANSISTOR b77
4312.020
transistor tt 2222
BLV92
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2N5004
Abstract: 2N5154 2N5328 OTC1550 OTC1900
Text: OPTEK TECHNOLOGY INC 4flE D WM fc,7TflSflO 0001303 Ô4T • OTK G>H OPTEK >— ' * - Product Bulletin OTC 1900 August 1990 NPN Power Switching Transistor Type OTC19QO t 35 " 80V, 10A Applications • • • • Inverters Switching Regulators
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OTC1900
OTC19QO
OTC1550
500mA,
2N5154,
2N5004
2N5328.
2N5154
2N5328
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors WM bb 5 3 R 31 Q02RR6Q 536 M APX Product specification VHF power MOS transistor BLF246 N AUER PHILIPS/DISCRETE FEATURES bRE PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability
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Q02RR6Q
BLF246
OT121
UCA939
CA940
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2n2646 pin
Abstract: 2N2646 pin configuration 2N2646 -pin configuration 2N2646 silicon unijunction transistor unijunction transistor transistor 2N2646 2N2646 CIRCUIT 2n2646 package 2N2646 PHILIPS
Text: PHILIPS INTERNATIONAL WM 711D A2 b 0042b l0 b31 • P H I N 5bE D Philips Semiconductors T-2 2N2646 Data sheet status Preliminary specification date of issue Decem ber 1990 S'-O*? Silicon unijunction transistor QUICK REFERENCE DATA SYMBOL ~VeB2 PARAMETER CONDITIONS
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0042bl0
2N2646
-TO-18
MCB443
2N2646
711Dfl2b
0042L
2n2646 pin
2N2646 pin configuration
2N2646 -pin configuration
silicon unijunction transistor
unijunction transistor
transistor 2N2646
2N2646 CIRCUIT
2n2646 package
2N2646 PHILIPS
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C583
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL PLANAR TRANSISTOR a O « > » & « # # # «ffl O «JSKfi* High Frequency Wide Band Amplifier Applications o High Praquenoy Low Noise Amplifier Applications X m « Unit : run fT i 4Ä< , cob t./J ' 5 '.'A Æ wM 7 ä « INDUSTRIAL APPLICATIONS
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200MHz
39MAX
C583
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BFG541
Abstract: X3A-BFR540 BFR540 BFG540
Text: 0035517 P h iM p s jg m ic o n d u c to rg _ _ ^ ^ NPN 9 GHz wideband transistor crystal WM A P Y 7bT Product specification X3A-BFR540 N AUER PHILIPS/DISCRETE b'îE D DESCRIPTION MECHANICAL DATA NPN crystal used in BFR540 SOT23 , BFG540 (SOT143) and BFG541 (SOT223). Crystals are supplied
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X3A-BFR540
BFR540
BFG540
OT143)
BFG541
OT223)
X3A-BFR540
URV-3-5-52/733
BFG541
BFR540
BFG540
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MRF9331
Abstract: MRF9331L BF432L BF432 MRF933
Text: MOTOROLA SC CXSTRS/R F ifbE H • b3b?25M 0015073 3 ■MOTb MOTOROLA ■ SEMICONDUCTOR wm TECHNICAL DATA MRF9331L BF432L* The RF Line N P N Silicon High-Frequency Transistor 'European Part Number . designed primarily for use in low power amplifiers to 1 GHz. Ideal for pagers and
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OT-143
MRF9331
MRF9331L
BF432L
BF432
MRF933
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BF753
Abstract: No abstract text available
Text: Ph|lips^emiconductor^_ WM 7 1 1 Qflg[3 O D bflbkiM GS2 PH I N Teliminar^pecifica^ NPN 5 GHz wideband transistor FEATURES BF753 PINNING • Low cost • Low noise figure 1 • 5 V tuner applications. 2 emitter 3 collector PIN DESCRIPTION base DESCRIPTION NPN silicon planar epitaxial
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7110agb
BF753
cur20
BF753
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TENTATIVE TLP270D TOSHIBA PHOTOCOUPLER t • GaAs IRED & PHOTO-MOS FET/PHOTO-TRANSISTOR i pi 7nn m wm r M OBILE/NOTE PCs PDAs MULTIMEDIA TVs MODEMS TLP270D has many multi-functions in DAA circuits for modems, which is a fully integrated design photocoupler in a 14pin SOP16
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TLP270D
TLP270D
14pin
150mA
980910EBC1erature
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Untitled
Abstract: No abstract text available
Text: HEWLETT-PACKARD/ CHPNTS t.lE D WM 4447534 1 44 577 □DD‘Ö Surface Mount, Low Current Silicon Bipolar Transistor Technical Data AT-60111 AT-60211 Features • Low C u rrent O peration AT-60111: 0.4 mA at 3 V AT-60211: 0.8 mA at 3 V • Low Noise Figure
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AT-60111
AT-60211
AT-60111:
AT-60211:
OT-143
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transistor k 2628
Abstract: AT-00511-TR at00511
Text: Wm H EW LETT mLfimPA CK A RD AT-00511 Surface Mount General Purpose Silicon Bipolar Transistor Features SOT-143 Plastic Package • 11 dB Typical P1dB at 2.0 GHz • 11.5 dB Typical G1dB at 2.0 GHz • 1.8 dB typical NF0 at 1.0 GHz • High Gain-Bandwidth Product: 7.0 GHz Typical fr
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AT-00511
OT-143
transistor k 2628
AT-00511-TR
at00511
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e5kk
Abstract: No abstract text available
Text: 2DI3OZ-1OO 30a : O utline Draw ings POWER TRANSISTOR MODULE F e a tu re s • «¡W/± High Voltage • 7 U— ') > * f f • i ' t — Krt/Si Including Free Wheeling Diode • ASO A'"/a V-' Excellent Safe Operating Area • M i WM Insulated Type LAMPNo 10
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E82988
dl-1231
e5kk
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2sb1423
Abstract: No abstract text available
Text: 2SB1423 h -7 > V ^ £ / T ransistors 2SB1423 • « l k ° * * y 7 ^ 7 , l / - t ^ P N P y ,J = i > h 7 > y * £ Epitaxial Planar PNP Silicon Transistor fö ü jÄ lilif f l/L o w Freq. Power Amp. 7. h P # 7 7 7 V n ffi/'S tro b o Flash. • WM\t"siEI/Dimensions Unit : mm
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2SB1423
100MHz
2sb1423
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