Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR TYPES AND APPLICATIONS Search Results

    TRANSISTOR TYPES AND APPLICATIONS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TB67H480FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5/ PHASE input type Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5/ IN input type Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TYPES AND APPLICATIONS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n3904

    Abstract: 2n3904 225 2n3904 npn 2N3903 transistor switching transistor 30v npn transistor 2N3905 TRANSISTOR 2N3904 E 25
    Text: 2N3903 2N3904 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3903 and 2N3904 types are NPN silicon transistors designed for general purpose amplifier and switching applications. PNP complementary types are 2N3905 and 2N3906.


    Original     		PDF 2N3903 2N3904 2N3905 2N3906. 100mA 100MHz 100kHz 2n3904 225 2n3904 npn 2N3903 transistor switching transistor 30v npn transistor 2N3905 TRANSISTOR 2N3904 E 25

    PNP switching transistor 2N3906 mhz

    Abstract: transistor 2N3905 2n3906 2N3906 NPN Transistor 2N3904 CENTRAL
    Text: 2N3905 2N3906 PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3905 and 2N3906 types are PNP silicon transistors designed for general purpose amplifier and switching applications. NPN complementary types are 2N3903 and 2N3904.


    Original     		PDF 2N3905 2N3906 2N3903 2N3904. 100mA 100MHz 100kHz PNP switching transistor 2N3906 mhz transistor 2N3905 2N3906 NPN Transistor 2N3904 CENTRAL

    MPS8099

    Abstract: mps8099 transistor transistor t 04 27
    Text: MPS8098 MPS8099 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPS8098 and MPS8099 types are NPN silicon transistors designed for general purpose audio amplifier applications. PNP complementary types are MPS8598 and


    Original     		PDF MPS8098 MPS8099 MPS8598 MPS8599. mps8099 transistor transistor t 04 27

    40841

    Abstract: 2158D how to control firing angle in thyristor 3096A CA3096 558 npn CA3096AE CA3096E CA3096E equivalent CA3096A
    Text: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types


    Original     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C 40841 2158D how to control firing angle in thyristor 3096A CA3096 558 npn CA3096AE CA3096E CA3096E equivalent

    Untitled

    Abstract: No abstract text available
    Text: BC546…BC550A/B/C NPN Transistor TO-92 Small Signal Product Features ◇For switching and AF amplifier applications ◇These types are subdivided into three groups A, B and C according to their current gain ◇Moisture sensitivity level 1 ◇Driver transistor


    Original     		PDF BC546â BC550A/B/C MIL-STD-202, BC550/A/B/C

    40841 MOSFET

    Abstract: 2158D CA3096 CA3096E equivalent CA3096A CA3096AE 40841 dual gate mosfet CA3096AM96 CA3096C CA3096E
    Text: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types


    Original     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C 40841 MOSFET 2158D CA3096 CA3096E equivalent CA3096AE 40841 dual gate mosfet CA3096AM96 CA3096E

    BC33x

    Abstract: No abstract text available
    Text: BC337…BC338-16/25/40 NPN Transistor TO-92 Small Signal Product Features ◇For switching and AF amplifier applications ◇These types are subdivided into three groups -16, -25 and -40, according to their DC current gain ◇Moisture sensitivity level 1 ◇Driver transistor


    Original     		PDF BC337â BC338-16/25/40 MIL-STD-202, BC337-16/25/40 BC33x

    mmbt9014

    Abstract: MMBT9014C MMBT9014B MMBT9014D MMBT9015
    Text: MMBT9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications As complementary types the PNP transistor MMBT9015 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage


    Original     		PDF MMBT9014 MMBT9015 OT-23 MMBT9014B MMBT9014C MMBT9014D mmbt9014 MMBT9014C MMBT9014B MMBT9014D

    NTC 220-11

    Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,


    Original     		PDF transisto25-735. NTC 220-11 PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide

    Philips high frequency bipolar transistor with Ft

    Abstract: equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR VDMOS DEVICE NPN planar RF transistor Philips high frequency bipolar transistor bipolar transistor die layout
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,


    Original     		PDF MGM011 BLV861 BLV2045 Philips high frequency bipolar transistor with Ft equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR VDMOS DEVICE NPN planar RF transistor Philips high frequency bipolar transistor bipolar transistor die layout

    MPF102 equivalent transistor

    Abstract: MPF102 JFET AN211A 2N3797 mpf102 fet 2N4351 MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET
    Text: AN211A/D Field Effect Transistors in Theory and Practice http://onsemi.com APPLICATION NOTE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or


    Original     		PDF AN211A/D r14525 AN211A/D MPF102 equivalent transistor MPF102 JFET AN211A 2N3797 mpf102 fet 2N4351 MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET

    MMBT9013G

    Abstract: MMBT9013H MMBT9012G MMBT9012H
    Text: MMBT9013G / MMBT9013H NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012G and MMBT9012H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol


    Original     		PDF MMBT9013G MMBT9013H MMBT9012G MMBT9012H OT-23 MMBT9013 500mA, 50MHz MMBT9013H

    MMBT9013H

    Abstract: MMBT9013G MMBT9012G MMBT9012H
    Text: MMBT9013G / MMBT9013H NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012G and MMBT9012H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter


    Original     		PDF MMBT9013G MMBT9013H MMBT9012G MMBT9012H OT-23 MMBT9013G MMBT9013H

    MMBT9013H

    Abstract: MMBT9012G MMBT9012H MMBT9013G
    Text: MMBT9013G / MMBT9013H NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012G and MMBT9012H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter


    Original     		PDF MMBT9013G MMBT9013H MMBT9012G MMBT9012H OT-23 MMBT9013G MMBT9013H

    tr 2n3906

    Abstract: 2N3906 2N3906 plastic 2N3906 die marking k3 pnp
    Text: 2N3906 PNP SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Suitable for Switching and Amplifier Applications Complementary NPN Types Available


    Original     		PDF 2N3906 2N3904) MIL-STD-202, MMBT3906 DS11202 tr 2n3906 2N3906 2N3906 plastic 2N3906 die marking k3 pnp

    BD437-D

    Abstract: MOTOROLA TRANSISTOR BD433 BD437 BD438 BD439 BD441 BD442
    Text: MOTOROLA Order this document by BD437/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon NPN Transistor . . . for amplifier and switching applications. Complementary types are BD438 and BD442. BD437 BD441 4.0 AMPERES POWER TRANSISTORS NPN SILICON


    Original     		PDF BD437/D* BD437/D BD437-D MOTOROLA TRANSISTOR BD433 BD437 BD438 BD439 BD441 BD442

    MMBT*9014d

    Abstract: MMBT9014B MMBT9014C MMBT9014D MMBT9015B MMBT9015C
    Text: MMBT9015B / MMBT9015C / MMBT9015D PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014B, MMBT9014C and MMBT9014D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC


    Original     		PDF MMBT9015B MMBT9015C MMBT9015D MMBT9014B, MMBT9014C MMBT9014D OT-23 100mA, MMBT*9014d MMBT9014B

    MMBT9014C

    Abstract: MMBT*9014d MMBT9014B MMBT9015B MMBT9015C MMBT9014D
    Text: MMBT9014B / MMBT9014C / MMBT9014D NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the PNP transistor MMBT9015B, MMBT9015C and MMBT9015D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC


    Original     		PDF MMBT9014B MMBT9014C MMBT9014D MMBT9015B, MMBT9015C MMBT9015D OT-23 100mA MMBT*9014d MMBT9015B MMBT9014D

    2n3904

    Abstract: pin configuration NPN transistor 2N3904 transistor ST 2N3904 2N3903 2N3904 equivalent 2N3904 plastic 2n3904 datasheet 2N3903 transistor ST 2n3904 TRANSISTOR PNP transistor 2n3904
    Text: ST 2N3903 / 2N3904 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the PNP transistors 2N3905 and 2N3906 are recommended. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2N3903 2N3904 2N3905 2N3906 100mA 2n3904 pin configuration NPN transistor 2N3904 transistor ST 2N3904 2N3904 equivalent 2N3904 plastic 2n3904 datasheet 2N3903 transistor ST 2n3904 TRANSISTOR PNP transistor 2n3904

    MMBT9014C

    Abstract: MMBT9014D MMBT9014B MMBT9015B MMBT9015C
    Text: MMBT9014B / MMBT9014C / MMBT9014D NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the PNP transistor MMBT9015B, MMBT9015C and MMBT9015D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC


    Original     		PDF MMBT9014B MMBT9014C MMBT9014D MMBT9015B, MMBT9015C MMBT9015D OT-23 100mA MMBT9014D MMBT9015B

    CA3096

    Abstract: No abstract text available
    Text: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types


    OCR Scan     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C CA3096

    BD438

    Abstract: BD440 transistor bd438 BD442 bd440 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 Plastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS PNP SILICON MAXIMUM RATINGS Rating Symbol


    OCR Scan     		PDF BD437 BD441. BD438 BD440 BD442 BD442 transistor bd438 bd440 transistor

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD437 BD441 P lastic Medium Power Silicon NPN Transistor Ulotorola Prtfmrtd Otvtet . . . for amplifier and switching applications. Complementary types are BD438 and BD442. 4.0 AMPERES POWER TRANSISTORS NPN SILICON MAXIMUM RATINGS


    OCR Scan     		PDF BD438 BD442. BD437 BD441 BD441

    CD4511B

    Abstract: No abstract text available
    Text: HARRIS CD4511B Types CMOS BCD-to-7-Segment Latch Decoder Drivers High-Voltage Types 20-V olt Rating D IS P L A Y aiZZHSblB1! 6 • CD4511B types are BCD-to-7-segment latch decoder drivers constructed w ith CMOS logic and n-p-n bipolar transistor out­ put devices on a single monolithic structure.


    OCR Scan     		PDF CD4511B 92CS-Z5087 92CM-27oe7Ri 4511B