UTC 225
Abstract: MMBT9015G MMBT9014
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9015 PNP SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9014 ORDERING INFORMATION Ordering Number Lead Free
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MMBT9015
450mW)
MMBT9014
MMBT9015L-x-AE3-R
MMBT9015G-x-AE3-R
OT-23
QW-R206-023
UTC 225
MMBT9015G
MMBT9014
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mmbt9015
Abstract: MMBT9014B MMBT9014C MMBT9014D
Text: MMBT9014BLT1 / MMBT9014CLT1 / MMBT9014DLT1 NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the PNP transistor MMBT9015BLT1, MMBT9015CLT1 and MMBT9015DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC
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MMBT9014BLT1
MMBT9014CLT1
MMBT9014DLT1
MMBT9015BLT1,
MMBT9015CLT1
MMBT9015DLT1
OT-23
100mA
mmbt9015
MMBT9014B
MMBT9014C
MMBT9014D
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MMBT9014B
Abstract: MMBT9014C MMBT9014D
Text: MMBT9014BLT1 / MMBT9014CLT1 / MMBT9014DLT1 NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the PNP transistor MMBT9015BLT1, MMBT9015CLT1 and MMBT9015DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC
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Original
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PDF
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MMBT9014BLT1
MMBT9014CLT1
MMBT9014DLT1
MMBT9015BLT1,
MMBT9015CLT1
MMBT9015DLT1
OT-23
100mA
MMBT9014B
MMBT9014C
MMBT9014D
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Untitled
Abstract: No abstract text available
Text: UTC MMBT9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9015 2 1 MARKING 3 14 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C, unless otherwise specified )
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Original
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PDF
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MMBT9014
450mW)
MMBT9015
OT-23
100mA,
QW-R206-022
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MMBT9015DLT1
Abstract: MMBT*9015c MMBT9015B MMBT9015C MMBT9014C
Text: MMBT9015BLT1 / MMBT9015CLT1 / MMBT9015DLT1 PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014BLT1, MMBT9014CLT1 and MMBT9014DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC
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Original
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PDF
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MMBT9015BLT1
MMBT9015CLT1
MMBT9015DLT1
MMBT9014BLT1,
MMBT9014CLT1
MMBT9014DLT1
OT-23
100mA,
MMBT9015DLT1
MMBT*9015c
MMBT9015B
MMBT9015C
MMBT9014C
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC MMBT9015 *Pb-free plating product number: MMBT9014L
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PDF
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MMBT9014
450mW)
MMBT9015
MMBT9014L
MMBT9014-x-AE3-R
MMBT9014L-x-AE3-R
OT-23
QW-R206-022
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MMBT9014
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High Total Power Dissipation. 450mW * Excellent hFE Linearity. * Complementary to UTC MMBT9015 ORDERING INFORMATION Ordering Number Lead Free
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Original
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PDF
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MMBT9014
450mW)
MMBT9015
MMBT9014G-x-AE3-R
OT-23
QW-R206-022
MMBT9014
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MMBT*9015c
Abstract: MMBT9015C MMBT9014B MMBT9014C MMBT9014D MMBT9015B MMBT9015
Text: MMBT9015B / MMBT9015C / MMBT9015D PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014B, MMBT9014C and MMBT9014D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC
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PDF
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MMBT9015B
MMBT9015C
MMBT9015D
MMBT9014B,
MMBT9014C
MMBT9014D
OT-23
100mA,
MMBT*9015c
MMBT9014B
MMBT9015
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MMBT9014
Abstract: No abstract text available
Text: MMBT9014 NPN Silicon Epitaxial Planar Transistors For switching and AF amplifier applications As complementary types the PNP transistors MMBT9015 is recommended. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25℃ PARAMETER
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MMBT9014
MMBT9015
OT-23
MMBT9014B
MMBT9014C
MMBT9014D
MMBT9014
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE 3 FEATURES * High Total Power Dissipation. 450mW * Excellent hFE Linearity. * Complementary to UTC MMBT9015 2 1 SOT-23 (JEDEC TO-236) ORDERING INFORMATION
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Original
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PDF
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MMBT9014
450mW)
MMBT9015
OT-23
O-236)
MMBT9014G-x-AE3-R
QW-R206-022
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MMBT9014LT1
Abstract: MMBT9014LT
Text: MMBT9014LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 PRF-AMPLIFIER,LOW LEVEL&LOW NOISE 1 Complemen to MMPT9015LT1 Collector-current:Ic=100mA Collector-Emiller Voltage:V CE =45V High Totalpower Dissipation Pc=225mW High life And Good Linearity 2 1. 1.BASE
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MMBT9014LT1
OT-23
MMPT9015LT1
100mA
225mW
MMBT9014LT1
MMBT9014LT
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MMBT*9014d
Abstract: MMBT9014B MMBT9014C MMBT9014D MMBT9015B MMBT9015C
Text: MMBT9015B / MMBT9015C / MMBT9015D PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014B, MMBT9014C and MMBT9014D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC
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PDF
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MMBT9015B
MMBT9015C
MMBT9015D
MMBT9014B,
MMBT9014C
MMBT9014D
OT-23
100mA,
MMBT*9014d
MMBT9014B
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MMBT9014C
Abstract: MMBT*9014d MMBT9014B MMBT9015B MMBT9015C MMBT9014D
Text: MMBT9014B / MMBT9014C / MMBT9014D NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the PNP transistor MMBT9015B, MMBT9015C and MMBT9015D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC
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MMBT9014B
MMBT9014C
MMBT9014D
MMBT9015B,
MMBT9015C
MMBT9015D
OT-23
100mA
MMBT*9014d
MMBT9015B
MMBT9014D
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MMBT9014C
Abstract: MMBT9014D MMBT9014B MMBT9015B MMBT9015C
Text: MMBT9014B / MMBT9014C / MMBT9014D NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the PNP transistor MMBT9015B, MMBT9015C and MMBT9015D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC
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PDF
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MMBT9014B
MMBT9014C
MMBT9014D
MMBT9015B,
MMBT9015C
MMBT9015D
OT-23
100mA
MMBT9014D
MMBT9015B
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mmbt9014
Abstract: MMBT9015C MMBT9015 MMBT9015B
Text: MMBT9015 PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications As complementary types the NPN transistor MMBT9014 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage
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PDF
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MMBT9015
MMBT9014
OT-23
MMBT9015B
MMBT9015C
MMBT9015D
MMBT9015C
MMBT9015
MMBT9015B
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mmbt9014
Abstract: MMBT9014C MMBT9014B MMBT9014D MMBT9015
Text: MMBT9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications As complementary types the PNP transistor MMBT9015 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage
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Original
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PDF
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MMBT9014
MMBT9015
OT-23
MMBT9014B
MMBT9014C
MMBT9014D
mmbt9014
MMBT9014C
MMBT9014B
MMBT9014D
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MMBT9015B
Abstract: MMBT9015C
Text: MMBT9015BLT1 / MMBT9015CLT1 / MMBT9015DLT1 PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014BLT1, MMBT9014CLT1 and MMBT9014DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC
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Original
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PDF
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MMBT9015BLT1
MMBT9015CLT1
MMBT9015DLT1
MMBT9014BLT1,
MMBT9014CLT1
MMBT9014DLT1
OT-23
100mA,
MMBT9015B
MMBT9015C
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MMBT9015C
Abstract: MMBT9014B MMBT9014C MMBT9014D MMBT9015B
Text: MMBT9015B / MMBT9015C / MMBT9015D PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014B, MMBT9014C and MMBT9014D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC
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PDF
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MMBT9015B
MMBT9015C
MMBT9015D
MMBT9014B,
MMBT9014C
MMBT9014D
OT-23
100mA,
MMBT9014B
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Untitled
Abstract: No abstract text available
Text: UTC MMBT9015 PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9014 2 1 MARKING 3 15 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
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Original
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PDF
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MMBT9015
450mW)
MMBT9014
OT-23
-100mA,
-10mA
QW-R206-023
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a3020
Abstract: MMBT9014LT1 MMBT9014LT
Text: MMBT9014LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 PRF-AMPLIFIER,LOW LEVEL&LOW NOISE 1 Complemen to MMPT9015LT1 Collector-current:Ic=100mA Collector-Emiller Voltage:V CE =45V High Totalpower Dissipation Pc=225mW High life And Good Linearity 2 1. 1.BASE
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Original
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PDF
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MMBT9014LT1
OT-23
MMPT9015LT1
100mA
225mW
a3020
MMBT9014LT1
MMBT9014LT
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MMBT9015
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9015 PNP SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE 3 FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9014 2 1 SOT-23 (JEDEC TO-236) ORDERING INFORMATION
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Original
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PDF
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MMBT9015
450mW)
MMBT9014
OT-23
O-236)
MMBT9015G-x-AE3-R
QW-R206-023
MMBT9015
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UTC 225
Abstract: MMBT9015 mmbt9014
Text: UTC MMBT9015 PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9014 2 1 MARKING 3 15 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
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Original
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PDF
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MMBT9015
450mW)
MMBT9014
OT-23
QW-R206-023
UTC 225
MMBT9015
mmbt9014
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD MMBT9015 PNP SILICON TRANSISTOR PRE-AM PLI FI ER, LOW LEV EL & LOW N OI SE ̈ FEAT U RES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9014 ̈ ORDERI N G I N FORM AT I ON Ordering Number
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Original
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PDF
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MMBT9015
450mW)
MMBT9014
MMBT9015L-x-AE3-R
MMBT9015G-x-AE3-R
OT-23
QW-R206-023
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mmbt9014
Abstract: MMBT9015
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High Total Power Dissipation. 450mW * Excellent hFE Linearity. * Complementary to UTC MMBT9015 ORDERING INFORMATION Ordering Number Package
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Original
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PDF
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MMBT9014
450mW)
MMBT9015
MMBT9014G-x-AE3-R
OT-23
QW-R206-022
mmbt9014
MMBT9015
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