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    Kingtronics International Company MMBT9014D

    MMBT9014D
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    Kingtronics International Company MMBT9014B

    MMBT9014B
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    Kingtronics International Company MMBT9014C

    MMBT9014C
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    MMBT9014 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MMBT9014 Unisonic Technologies PRE-AMPLIFIER, LOW LEVEL AND LOW NOISE NPN EPITAXIAL SILICON TRANSISTOR Original PDF

    MMBT9014 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UTC 225

    Abstract: MMBT9015G MMBT9014
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9015 PNP SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9014 „ ORDERING INFORMATION Ordering Number Lead Free


    Original     		PDF MMBT9015 450mW) MMBT9014 MMBT9015L-x-AE3-R MMBT9015G-x-AE3-R OT-23 QW-R206-023 UTC 225 MMBT9015G MMBT9014

    mmbt9015

    Abstract: MMBT9014B MMBT9014C MMBT9014D
    Text: MMBT9014BLT1 / MMBT9014CLT1 / MMBT9014DLT1 NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the PNP transistor MMBT9015BLT1, MMBT9015CLT1 and MMBT9015DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC


    Original     		PDF MMBT9014BLT1 MMBT9014CLT1 MMBT9014DLT1 MMBT9015BLT1, MMBT9015CLT1 MMBT9015DLT1 OT-23 100mA mmbt9015 MMBT9014B MMBT9014C MMBT9014D

    MMBT9014B

    Abstract: MMBT9014C MMBT9014D
    Text: MMBT9014BLT1 / MMBT9014CLT1 / MMBT9014DLT1 NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the PNP transistor MMBT9015BLT1, MMBT9015CLT1 and MMBT9015DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC


    Original     		PDF MMBT9014BLT1 MMBT9014CLT1 MMBT9014DLT1 MMBT9015BLT1, MMBT9015CLT1 MMBT9015DLT1 OT-23 100mA MMBT9014B MMBT9014C MMBT9014D

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBT9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9015 2 1 MARKING 3 14 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C, unless otherwise specified )


    Original     		PDF MMBT9014 450mW) MMBT9015 OT-23 100mA, QW-R206-022

    MMBT9015DLT1

    Abstract: MMBT*9015c MMBT9015B MMBT9015C MMBT9014C
    Text: MMBT9015BLT1 / MMBT9015CLT1 / MMBT9015DLT1 PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014BLT1, MMBT9014CLT1 and MMBT9014DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC


    Original     		PDF MMBT9015BLT1 MMBT9015CLT1 MMBT9015DLT1 MMBT9014BLT1, MMBT9014CLT1 MMBT9014DLT1 OT-23 100mA, MMBT9015DLT1 MMBT*9015c MMBT9015B MMBT9015C MMBT9014C

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC MMBT9015 *Pb-free plating product number: MMBT9014L „


    Original     		PDF MMBT9014 450mW) MMBT9015 MMBT9014L MMBT9014-x-AE3-R MMBT9014L-x-AE3-R OT-23 QW-R206-022

    MMBT9014

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High Total Power Dissipation. 450mW * Excellent hFE Linearity. * Complementary to UTC MMBT9015 „ ORDERING INFORMATION Ordering Number Lead Free


    Original     		PDF MMBT9014 450mW) MMBT9015 MMBT9014G-x-AE3-R OT-23 QW-R206-022 MMBT9014

    MMBT*9015c

    Abstract: MMBT9015C MMBT9014B MMBT9014C MMBT9014D MMBT9015B MMBT9015
    Text: MMBT9015B / MMBT9015C / MMBT9015D PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014B, MMBT9014C and MMBT9014D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC


    Original     		PDF MMBT9015B MMBT9015C MMBT9015D MMBT9014B, MMBT9014C MMBT9014D OT-23 100mA, MMBT*9015c MMBT9014B MMBT9015

    MMBT9014

    Abstract: No abstract text available
    Text: MMBT9014 NPN Silicon Epitaxial Planar Transistors For switching and AF amplifier applications As complementary types the PNP transistors MMBT9015 is recommended. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25℃ PARAMETER


    Original     		PDF MMBT9014 MMBT9015 OT-23 MMBT9014B MMBT9014C MMBT9014D MMBT9014

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE  3 FEATURES * High Total Power Dissipation. 450mW * Excellent hFE Linearity. * Complementary to UTC MMBT9015 2 1 SOT-23 (JEDEC TO-236)  ORDERING INFORMATION


    Original     		PDF MMBT9014 450mW) MMBT9015 OT-23 O-236) MMBT9014G-x-AE3-R QW-R206-022

    MMBT9014LT1

    Abstract: MMBT9014LT
    Text: MMBT9014LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 PRF-AMPLIFIER,LOW LEVEL&LOW NOISE 1 Complemen to MMPT9015LT1 Collector-current:Ic=100mA Collector-Emiller Voltage:V CE =45V High Totalpower Dissipation Pc=225mW High life And Good Linearity 2 1. 1.BASE


    Original     		PDF MMBT9014LT1 OT-23 MMPT9015LT1 100mA 225mW MMBT9014LT1 MMBT9014LT

    MMBT*9014d

    Abstract: MMBT9014B MMBT9014C MMBT9014D MMBT9015B MMBT9015C
    Text: MMBT9015B / MMBT9015C / MMBT9015D PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014B, MMBT9014C and MMBT9014D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC


    Original     		PDF MMBT9015B MMBT9015C MMBT9015D MMBT9014B, MMBT9014C MMBT9014D OT-23 100mA, MMBT*9014d MMBT9014B

    MMBT9014C

    Abstract: MMBT*9014d MMBT9014B MMBT9015B MMBT9015C MMBT9014D
    Text: MMBT9014B / MMBT9014C / MMBT9014D NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the PNP transistor MMBT9015B, MMBT9015C and MMBT9015D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC


    Original     		PDF MMBT9014B MMBT9014C MMBT9014D MMBT9015B, MMBT9015C MMBT9015D OT-23 100mA MMBT*9014d MMBT9015B MMBT9014D

    MMBT9014C

    Abstract: MMBT9014D MMBT9014B MMBT9015B MMBT9015C
    Text: MMBT9014B / MMBT9014C / MMBT9014D NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the PNP transistor MMBT9015B, MMBT9015C and MMBT9015D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC


    Original     		PDF MMBT9014B MMBT9014C MMBT9014D MMBT9015B, MMBT9015C MMBT9015D OT-23 100mA MMBT9014D MMBT9015B

    mmbt9014

    Abstract: MMBT9015C MMBT9015 MMBT9015B
    Text: MMBT9015 PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications As complementary types the NPN transistor MMBT9014 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage


    Original     		PDF MMBT9015 MMBT9014 OT-23 MMBT9015B MMBT9015C MMBT9015D MMBT9015C MMBT9015 MMBT9015B

    mmbt9014

    Abstract: MMBT9014C MMBT9014B MMBT9014D MMBT9015
    Text: MMBT9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications As complementary types the PNP transistor MMBT9015 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage


    Original     		PDF MMBT9014 MMBT9015 OT-23 MMBT9014B MMBT9014C MMBT9014D mmbt9014 MMBT9014C MMBT9014B MMBT9014D

    MMBT9015B

    Abstract: MMBT9015C
    Text: MMBT9015BLT1 / MMBT9015CLT1 / MMBT9015DLT1 PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014BLT1, MMBT9014CLT1 and MMBT9014DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC


    Original     		PDF MMBT9015BLT1 MMBT9015CLT1 MMBT9015DLT1 MMBT9014BLT1, MMBT9014CLT1 MMBT9014DLT1 OT-23 100mA, MMBT9015B MMBT9015C

    MMBT9015C

    Abstract: MMBT9014B MMBT9014C MMBT9014D MMBT9015B
    Text: MMBT9015B / MMBT9015C / MMBT9015D PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014B, MMBT9014C and MMBT9014D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC


    Original     		PDF MMBT9015B MMBT9015C MMBT9015D MMBT9014B, MMBT9014C MMBT9014D OT-23 100mA, MMBT9014B

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBT9015 PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9014 2 1 MARKING 3 15 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)


    Original     		PDF MMBT9015 450mW) MMBT9014 OT-23 -100mA, -10mA QW-R206-023

    a3020

    Abstract: MMBT9014LT1 MMBT9014LT
    Text: MMBT9014LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 PRF-AMPLIFIER,LOW LEVEL&LOW NOISE 1 Complemen to MMPT9015LT1 Collector-current:Ic=100mA Collector-Emiller Voltage:V CE =45V High Totalpower Dissipation Pc=225mW High life And Good Linearity 2 1. 1.BASE


    Original     		PDF MMBT9014LT1 OT-23 MMPT9015LT1 100mA 225mW a3020 MMBT9014LT1 MMBT9014LT

    MMBT9015

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9015 PNP SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE  3 FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9014 2 1 SOT-23 (JEDEC TO-236)  ORDERING INFORMATION


    Original     		PDF MMBT9015 450mW) MMBT9014 OT-23 O-236) MMBT9015G-x-AE3-R QW-R206-023 MMBT9015

    UTC 225

    Abstract: MMBT9015 mmbt9014
    Text: UTC MMBT9015 PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9014 2 1 MARKING 3 15 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)


    Original     		PDF MMBT9015 450mW) MMBT9014 OT-23 QW-R206-023 UTC 225 MMBT9015 mmbt9014

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD MMBT9015 PNP SILICON TRANSISTOR PRE-AM PLI FI ER, LOW LEV EL & LOW N OI SE ̈ FEAT U RES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9014 ̈ ORDERI N G I N FORM AT I ON Ordering Number


    Original     		PDF MMBT9015 450mW) MMBT9014 MMBT9015L-x-AE3-R MMBT9015G-x-AE3-R OT-23 QW-R206-023

    mmbt9014

    Abstract: MMBT9015
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High Total Power Dissipation. 450mW * Excellent hFE Linearity. * Complementary to UTC MMBT9015 „ „ ORDERING INFORMATION Ordering Number Package


    Original     		PDF MMBT9014 450mW) MMBT9015 MMBT9014G-x-AE3-R OT-23 QW-R206-022 mmbt9014 MMBT9015