MMBT9012H
Abstract: MMBT9012G MMBT9013G MMBT9013H
Text: MMBT9012G / MMBT9012H PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the NPN transistors MMBT9013G and MMBT9013H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol
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MMBT9012G
MMBT9012H
MMBT9013G
MMBT9013H
OT-23
500mA,
50MHz
MMBT9012H
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MMBT9013G
Abstract: MMBT9013H MMBT9012G MMBT9012H
Text: MMBT9013G / MMBT9013H NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012G and MMBT9012H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol
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Original
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PDF
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MMBT9013G
MMBT9013H
MMBT9012G
MMBT9012H
OT-23
MMBT9013
500mA,
50MHz
MMBT9013H
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MMBT9012H
Abstract: MMBT9012HLT1 MMBT9012G MMBT9012 MMBT9013
Text: MMBT9012GLT1 / MMBT9012HLT1 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the NPN transistors MMBT9013GLT1 and MMBT9013HLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC
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Original
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PDF
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MMBT9012GLT1
MMBT9012HLT1
MMBT9013GLT1
MMBT9013HLT1
OT-23
500mA,
50MHz
MMBT9012H
MMBT9012HLT1
MMBT9012G
MMBT9012
MMBT9013
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MMBT9012G
Abstract: MMBT9012H MMBT9013G MMBT9013H
Text: MMBT9012G / MMBT9012H PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the NPN transistors MMBT9013G and MMBT9013H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter
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Original
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PDF
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MMBT9012G
MMBT9012H
MMBT9013G
MMBT9013H
OT-23
MMBT9012G
MMBT9012H
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MMBT9013H
Abstract: MMBT9013G MMBT9012G MMBT9012H
Text: MMBT9013G / MMBT9013H NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012G and MMBT9012H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter
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Original
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PDF
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MMBT9013G
MMBT9013H
MMBT9012G
MMBT9012H
OT-23
MMBT9013G
MMBT9013H
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MMBT9013H
Abstract: MMBT9012G MMBT9012H MMBT9013G
Text: MMBT9013G / MMBT9013H NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012G and MMBT9012H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter
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Original
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PDF
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MMBT9013G
MMBT9013H
MMBT9012G
MMBT9012H
OT-23
MMBT9013G
MMBT9013H
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MMBT9012G
Abstract: MMBT9012H
Text: MMBT9012GLT1 / MMBT9012HLT1 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the NPN transistors MMBT9013GLT1 and MMBT9013HLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC
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Original
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PDF
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MMBT9012GLT1
MMBT9012HLT1
MMBT9013GLT1
MMBT9013HLT1
OT-23
500mA,
50MHz
MMBT9012G
MMBT9012H
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MMBT9012G
Abstract: MMBT9012H MMBT9013G MMBT9013H
Text: MMBT9012G / MMBT9012H PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the NPN transistors MMBT9013G and MMBT9013H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter
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Original
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PDF
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MMBT9012G
MMBT9012H
MMBT9013G
MMBT9013H
OT-23
MMBT9012G
MMBT9012H
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mmbt9013
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total Power Dissipation. 625mW *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012
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MMBT9013
625mW)
500mA)
MMBT9012
MMBT9013-x-AE3-R
MMBT9013L-x-AE3-R
MMBT9013G-x-AE3-R
OT-23
QW-R206-021
mmbt9013
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 3 FEATURES 2 *High total Power Dissipation. 625mW *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012
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Original
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PDF
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MMBT9013
625mW)
500mA)
MMBT9012
OT-23
O-236)
MMBT9013G-x-AE3-R
QW-R206-021
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD MMBT9013 NPN SILICON TRANSISTOR 1 W OU T PU T AM PLI FI ER OF POT ABLE RADI OS I N CLASS B PU SH -PU LL OPERAT I ON ̈ FEAT U RES *High total Power Dissipation. 625mW *High Collector Current. (500mA) *Excellent hFE linearity.
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Original
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PDF
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MMBT9013
625mW)
500mA)
MMBT9012
MMBT9013-x-AE3-R
MMBT9013L-x-AE3-R
MMBT9013G-x-AE3-R
OT-23
QW-R206-021
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