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    TRANSISTOR TD7 Search Results

    TRANSISTOR TD7 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TD7 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NEC JAPAN 237 521 02

    Abstract: 3563 1231 2SC5014 2SC5015 2SC5015-T1 2SC5015-T2 t83 230 02 TD-7938
    Text: DATA SHEET SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. 2.1 ± 0.2 PART


    Original     		PDF 2SC5015 2SC5015-T1 2SC5015-T2 05Special: NEC JAPAN 237 521 02 3563 1231 2SC5014 2SC5015 2SC5015-T1 2SC5015-T2 t83 230 02 TD-7938

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


    Original     		PDF

    capacitor 104 PF disc

    Abstract: transistor T43 B52 transistor transistor d 1991 ar D 1991 AR apx 188 Transistor 5331
    Text: N AMER PHI LIPS/DISCRETE bTE T> m bb53^B]> 0028832 TD7 • IAPX BLU30/28 J l UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and em itter ballasting resistors fo r an optim um temperature profile


    OCR Scan     		PDF BLU30/28 BLU30/28 OT119) capacitor 104 PF disc transistor T43 B52 transistor transistor d 1991 ar D 1991 AR apx 188 Transistor 5331

    MSA035

    Abstract: BFQ246 MSB002
    Text: Philips Semiconductors Preliminary specification PNP video transistor BFQ246 APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors. DESCRIPTION PNP silicon transistor encapsulated in a 4-lead plastic SOT223 package.


    OCR Scan     		PDF OT223 7110fl2b BFQ246 MSA035â OT223. 711005t. MSA035 BFQ246 MSB002

    BUK543

    Abstract: BUK543-100A BUK543-100B
    Text: f . - — - - - . — - PHILIPS INTERNATIONAL bSE D B - 711065b D D b 4 m Philips Semiconductors - TD7 • PHIN Product Specification PowerMOS transistor


    OCR Scan     		PDF 711065b BUK543-100A/B -SOT186 BUK543 BUK543-100A BUK543-100B

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    TEA2019

    Abstract: NTCC TEA2018A ic 810 pin diagram
    Text: SGS-THOMSON TEA2019 I CURRENT MODE SWITCHING POWER SUPPLY CONTROL CIRCUIT • DIRECT DRIVE OF THE EXTERNAL SWITCH­ ING TRANSISTOR ■ POSITIVE AND NEGATIVE OUTPUT CUR­ RENTS UP TO 0.5A ■ CURRENT LIMITATION ■ TRANSFORMER DEMAGNETIZATION AND POWER TRANSISTOR SATURATION SENS­


    OCR Scan     		PDF TEA2019 14-pin TEA2018A 15kHz 155Vrms< VacS250Vrms 7TSTE37 NTCC ic 810 pin diagram

    2SK1294

    Abstract: NEC 41-A 002 TD-7594 2SK1294 NEC MEI-1202 TEA-1035
    Text: NEC ^•SESSE DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1294 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1294 is N-channel M O S Field Effect Transistor de­ PACKAGE DIMENSIONS in millimeters signed fo r solenoid, m otor and lam p driver.


    OCR Scan     		PDF 2SK1294 IEI-1209) NEC 41-A 002 TD-7594 2SK1294 NEC MEI-1202 TEA-1035

    Untitled

    Abstract: No abstract text available
    Text: bb53T31 DD25bS3 ITfl H A P X N AMER PHILIPS/DISCRETE BST84 b?E D N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel vertical D-MOS transistor in SOT89 envelope and designed fo r use as line current inter­ rupter in telephone sets and fo r application in relay, high-speed and line-transformer drivers.


    OCR Scan     		PDF bb53T31 DD25bS3 BST84

    BST84

    Abstract: z940 w200V
    Text: • N bbSBTBl AMER DDESb53 ITß *APX PHILIPS/DISCRETE b?E BST84 T> N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel vertical D-MOS transistor in SOT89 envelope and designed fo r use as line current inter­ rupter in telephone sets and fo r application in relay, high-speed and line-transformer drivers.


    OCR Scan     		PDF bb53T31 DDESb53 BST84 Z94045 RDSonat25Â BST84 z940 w200V

    tsl-3

    Abstract: TD6380 TD7614F 28X4
    Text: TO SH IBA _ TD7614F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T D7614 F 3-WIRE BUS, 1.3GHZ-FREQUENCY SYNTHESIZER IC FEATURES • 3-wire bus system software-compatible with TD6380 series . • Built-in 4-band switch transistor.


    OCR Scan     		PDF TD7614F TD6380 25kHz, 50kHz 20-pin 25kHz tsl-3 TD7614F 28X4

    Untitled

    Abstract: No abstract text available
    Text: TD7614F T O SH IB A TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T n 7 fi 1 A F • Krtr’ ■ m ■ ■ 3-WIRE BUS, 1.3GHZ-FREQUENCY SYNTHESIZER IC FEATURES • 3-wire bus system software-compatible with TD6380 series . • Built-in 4-band switch transistor.


    OCR Scan     		PDF TD7614F TD6380 25kHz, 50kHz 20-pin TD6380 01/iF

    2SC3365 -TO3

    Abstract: 2sc2820 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899 2SC2979
    Text: HITACHI/ OPTOELECTRONICS blE ]> • 4MTb2DS □□13776 TD7 ■ H I T H T 24 4. Pow er Bipolar Transistors H IT A C H I 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment.


    OCR Scan     		PDF GD1377Ã 2SC4692 2SC4744 2SC4745 2SC4746 2SC4747 2SC4796 2SC4797 2SC4877 2SC4878 2SC3365 -TO3 2sc2820 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899 2SC2979

    itt 2222

    Abstract: tag l9 transistor 2222 030 capacitor philips ITT 2222 A 4312 020 36642 Philips 2222 capacitor electrolytic capacitor 47 capacitor j63 c9 38478 philips ceramic capacitors
    Text: PhHip^emiconductor^^^ _ bbSBIBl 003G12b TD7 H AP X ^Pjoduc^pecjficatjon UHF power MOS transistor ^ BLF544 N AMER P H I L I P S / D I S C R E T E bTE D PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability / • Gold metallization ensures


    OCR Scan     		PDF 003G12b BLF544 OT171 MCA836 itt 2222 tag l9 transistor 2222 030 capacitor philips ITT 2222 A 4312 020 36642 Philips 2222 capacitor electrolytic capacitor 47 capacitor j63 c9 38478 philips ceramic capacitors

    3 terminal 4mhz crystal oscillator

    Abstract: TD7614F comparator 12v 10bit TD6380 28x4
    Text: TO S H IB A TD7614F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T D 7 61 4 F 3-WIRE BUS, 1.3GHZ-FREQUENCY SYNTHESIZER IC FEATURES • 3-wire bus system software-compatible with TD6380 series . • Built-in 4-band switch transistor. • Built-in tuning amp (high withstanding voltage of 35V).


    OCR Scan     		PDF TD7614F TD6380 25kHz, 50kHz 20-pin 25kHz 3 terminal 4mhz crystal oscillator TD7614F comparator 12v 10bit 28x4

    comparator 12v 10bit

    Abstract: TD6380 TD7614F td7614 th crystal oscillator
    Text: TO S H IBA TD7614F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T D 7 61 4 F 3-W IRE BUS, 1.3GHZ-FREQUENCY SYNTHESIZER IC FEATURES • 3-wire bus system software-compatible with TD6380 series . • Built-in 4-band switch transistor. • Built-in tuning amp (high withstanding voltage of 35V).


    OCR Scan     		PDF TD7614F TD6380 25kHz, 50kHz 20-pin 25kHz 01//F comparator 12v 10bit TD7614F td7614 th crystal oscillator

    MX0912B250Y

    Abstract: 33-AS IEC134 015 capacitor philips
    Text: Data shaat •tatua data of Issu* HILXPS MX0912B250Y Preliminary specification NPN silicon planar epitaxial microwave power transistor June 1992 SbE D INTERNATIONAL • 7110fl2b Ü04b34fc, 7Q3 H P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high


    OCR Scan     		PDF 33-AS" MX0912B250Y G04b34b T-33-Ã 711Dfl2b 004b352 0QMb43? MX0912B250Y 33-AS IEC134 015 capacitor philips

    m54517p

    Abstract: M54517 3e tRANSISTOR mitsubishi 7 pin 5v relay NO DARLINGTON SINK DRIVER
    Text: fciBE • b 2 4 =]fl5 7 M IT S U B IS H I □ D m 'ìb 'ì D GT L In I T 3 TD7 MI T SU BI SH I BIPOLAR DIGITAL ICs M 54517P LO G IC 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION The M54517P, 7-channel sink driver, consists of 14 NPN tran­ PIN CONFIGURATION (TOP VIEW)


    OCR Scan     		PDF M54517P 400mA M54517P, 400mA M54517P M54517 3e tRANSISTOR mitsubishi 7 pin 5v relay NO DARLINGTON SINK DRIVER

    NEC 41-A 002

    Abstract: 2SK1294 MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 NEC ^•SESSE DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1294 SWITCHING N-CHANNEL POWER MOS FET


    OCR Scan     		PDF 2SK1294 2SK1294 IEI-1209) NEC 41-A 002 MEI-1202 TEA-1035

    nec 2501

    Abstract: TEA-1035 2SK1294 MEI-1202 nec 2702
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1294 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE


    OCR Scan     		PDF 2SK1294 2SK1294 IEI-1209) nec 2501 TEA-1035 MEI-1202 nec 2702

    2SC3544

    Abstract: IC sn 74 ls 2000
    Text: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION • LO W COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UH F oscillator and m ixer applications. It is suitable for autom otive keyless entry


    OCR Scan     		PDF NE944 IS12I IS12S21I b427525 00L5770 2SC3544 IC sn 74 ls 2000

    LINEAR/615/OS/LM01A/TC55417P/hexfet power mosfets international rectifier

    Abstract: No abstract text available
    Text: International S Rectifier Provisional Data Sheet No. PD-9.1401 REPETITIVE AVALANCHE AND dv/dt RATED IRHY9230CM JANSR2N7383 HEXFET TRANSISTOR [REF: MIL-PRF-19500/615] P-CHANNEL RAD HARD -200 Volt, 0.8G, RAD HARD HEXFET Product Summary International Rectifier's P-Channel RAD HARD technology


    OCR Scan     		PDF IRHY9230CM JANSR2N7383 MIL-PRF-19500/615] 4A55452 LINEAR/615/OS/LM01A/TC55417P/hexfet power mosfets international rectifier

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL TO SH IBA BIPOLAR DIGITAL INTEGRATED CIRCUIT T D 76 14 F DATA SILICON MONOLITHIC 3-WIRE BUS, 1.3GHZ-FREQUENCY SYNTHESIZER IC FEATURES • 3-wire bus system softw are-com patible w ith TD6380 series . • Built-in 4-band switch transistor.


    OCR Scan     		PDF TD6380 25kHz, 50kHz 20-pin TD6380 TD7614F 7614F- OP20-P-300-1 59TYP