Untitled
Abstract: No abstract text available
Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3441 3 AMPERES NPN SILICON POWER TRANSISTOR NPN SILICON POWER TRANSISTOR . . . 2N3441 transistor is designed for use in general-purpose switching
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2N3441
2N3441
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2n3019 equivalent
Abstract: 2n3019 transistor test 2N3700 "nickel cap"
Text: 2N3019 Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3019 NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and
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2N3019
MIL-PRF-19500/391
2N3019
MIL-PRF-19500/391.
T4-LDS-0185,
2n3019 equivalent
2n3019 transistor
test 2N3700
"nickel cap"
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2n3057
Abstract: No abstract text available
Text: 2N3057A Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3057A NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and
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2N3057A
MIL-PRF-19500/391
2N3057A
2N3057
MIL-PRF-19500/391.
T4-LDS-0185-1,
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6822
Abstract: 2N3019S "nickel cap"
Text: 2N3019S Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3019S NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and
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2N3019S
MIL-PRF-19500/391
2N3019S
2N3019
MIL-PRF-19500/391.
T4-LDS-0185-4,
6822
"nickel cap"
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Untitled
Abstract: No abstract text available
Text: 2N3019S Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3019S NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and
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2N3019S
MIL-PRF-19500/391
2N3019S
O-205AD)
2N3019
MIL-PRF-19500/391.
T4-LDS-0185-4,
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PBSS4350D
Abstract: PBSS5350D
Text: SO T4 57 PBSS5350D 50 V, 3 A PNP low VCEsat BISS transistor Rev. 5 — 23 March 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
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PBSS5350D
OT457
SC-74)
PBSS4350D
AEC-Q101
PBSS4350D
PBSS5350D
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Untitled
Abstract: No abstract text available
Text: SO T4 57 PBSS5350D 50 V, 3 A PNP low VCEsat BISS transistor Rev. 6 — 28 June 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
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PBSS5350D
OT457
SC-74)
PBSS4350D
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: SO T4 57 PBSS5350D 50 V, 3 A PNP low VCEsat BISS transistor Rev. 6 — 28 June 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
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PBSS5350D
OT457
SC-74)
PBSS4350D
AEC-Q101
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2SC3545
Abstract: LEN-160 MARKING TRANSISTOR T44
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3545 UHF OSCILLATOR AND MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SC3545 is an NPN silicon epitaxial transistor intended for use as UHF oscillator and mixer in a tuner of a TV receiver. The device features stable oscillation and small frequency drift against
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2SC3545
2SC3545
LEN-160
MARKING TRANSISTOR T44
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Untitled
Abstract: No abstract text available
Text: Photo Transistor Product No: M TD8 6 0 0 T4 -T Peak Sensitivity Wavelength: 880nm The MTD8600T4-T is a photo transistor in a TO-18 metal can lat top package. It is well suited for high reliability and high sensitivity applications. F EATU RES AP P L IC ATIO N S
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880nm
MTD8600T4-T
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E » bbS3T31 QDS^SS2 T4T BLX13U IAPX H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in transmitting amplifiers operating in the h.f. and v.h.f. bands, with a nominal supply voltage of 28 V. The transistor is specified for s.s.b. applications as linear
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bbS3T31
BLX13U
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE SOD300A40/6Q UL;E76102 M SQD300A is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for
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OD300A40/6Q
E76102
SQD300A
400/600V
--A40
0Q02B06
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carbon resistors
Abstract: BLX13 BLX13C philips carbon film resistor carbon resistor RF amplifiers in the HF and VHF A1E transistor Philips Carbon Resistor
Text: N AMER PHILIPS/DISCRETE b^E ]> bb53*i31 □ DS*ìSS2 T4T A E3LX13U H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transm itting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V. The transistor is specified fo r s.s.b. applications as linear
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e3lx13u
7Z77838
BLX13U
BLX13C
carbon resistors
BLX13
philips carbon film resistor
carbon resistor
RF amplifiers in the HF and VHF
A1E transistor
Philips Carbon Resistor
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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Untitled
Abstract: No abstract text available
Text: N APIER PHILIPS/DISCRETE b=lE D • bbS3T31 003=1136 T4b APX BLV92 _J V U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 900 MHz communications band.
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bbS3T31
BLV92
OT-171)
DDER14S
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transistor t4B
Abstract: BFP91A tag 8726 BFQ23C Tag c0 665 800 transistor d 1557 0D31521 1557 transistor SOT173 SOT173 RF transistor
Text: i Philips Semiconductors 53*131 ^ DD31SE 1 T4b M i APX Product specification PNP 5 GHz wideband transistor . — — DESCRIPTION BFQ23C N AWER PHILIPS/DISCRETE PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT 173 and SOT173X micro-stripline envelopes. It is
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0D31521
BFQ23C
OT173
OT173X
BFP91A.
transistor t4B
BFP91A
tag 8726
BFQ23C
Tag c0 665 800
transistor d 1557
1557 transistor
SOT173
SOT173 RF transistor
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transistor T43
Abstract: No abstract text available
Text: Philips Semiconductors bbSS'Ol 0024b4fl T43 H A P X N AUER PHILIPS/DISCRETE NPN 1 GHz wideband transistor DESCRIPTION Preliminary specification fc,7E D BF547W PINNING Silicon NPN transistor in a plastic SOT323 S-mini envelope. It is primarily intended as a mixer,
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0024b4fl
BF547W
OT323
BF547W
BF547.
MBC870
OT323.
transistor T43
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nec 817
Abstract: MARKING TRANSISTOR T44 PT4250 2SC3545
Text: DATA SHEET SILICON TRANSISTOR 2SC3545 UHF OSCILLATOR AND MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SC3545 is an NPN silicon epitaxial transistor intended for use as PACKAGE DIMENSIONS Units: mm UHF oscillator and mixer in a tuner of a TV receiver.
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2SC3545
2SC3545
nec 817
MARKING TRANSISTOR T44
PT4250
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2SK784
Abstract: No abstract text available
Text: 6427 52 5 N E C ELECTRON ICS INC 98D 18928 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR Tfl • t427S2S 3 I _ _ _ 2SK784 DESCRIPTION The 2SK784 is N-channel MOS Field Effect Power Transistor designed for switching power supplies DC-DC converters. FEA TU R ES
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t427sas
2SK784
2SK784
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BC856BW
Abstract: No abstract text available
Text: ^ 5 3 ^ 3 1 002447b T4b « A P X Philips Semiconductors PNP general purpose transistor BC856W; BC857W; BC858W N AMER PHILIPS/DISCRETE FEATURES Product specification b?E T> PIN CONFIGURATION • S- mini package. DESCRIPTION E l EL - 1 c P N P transistor in a plastic SOT323
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002447b
BC856W;
BC857W;
BC858W
OT323
BB018
BC856BW:
BC857W:
BC856W
BC856BW
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK552-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.
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BUK552-60A/B
BUK552
T0220ABate1re
BUK552-60A/B
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Untitled
Abstract: No abstract text available
Text: N APIER PHILIPS/DISCRETE bTE T> b b S B ' m □Q2flc?c17 T44 • APX BLV33F A V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear v.h.f. amplifiers fo r television transmitters and transposers. Features o f this product:
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BLV33F
BLV33F
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DISCRETE SC blE ]> 1,24^05^ GG1SE71 T40 H n iT 5 MITSUBISHI RF POWER TRANSISTOR 2SC2797 NPN EPITAXIAL P LA N A R T Y P E DESCRIPTION OUTLINE DRAWING 2SC2797 is a silicon NPN epitaxial planar type transistor designed for RF broad-band power amplifiers in U H F band.
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GG1SE71
2SC2797
2SC2797
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2PA1576
Abstract: 2PA1576Q 2PA1576R 2PA1576S Transistor A1H
Text: N AMER P H I L I P S / D I S C R E T E bTE D bb53T31 D G 2fln3 IAPX T41 Objective specification Philips Semiconductors 2PA1576 PNP general purpose transistor FEATURES • S-mini package • Low output capacitance, C0b = 2.5 pF typ. . DESCRIPTION PNP transistor in a plastic three lead
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bb53T31
2PA1576Q
2PA1576R
2PA1576S
2PA1576
Transistor A1H
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