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    Microchip Technology Inc 2N3057A

    TRANS NPN 80V 1A TO46-3
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    Microchip Technology Inc JAN2N3057A

    TRANS NPN 80V 1A TO46-3
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    Microchip Technology Inc JANS2N3057A

    TRANS NPN 80V 1A TO46
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    Microchip Technology Inc JANSM2N3057A

    RH SMALL-SIGNAL BJT
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    Microchip Technology Inc JANSL2N3057A

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    2N3057A Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3057A Microsemi Low Power NPN Silicon Transistor Original PDF
    2N3057A Microsemi Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 80V 1A TO-46 Original PDF
    2N3057A Semico Type 2N3057A Geometry 4500 Polarity NPN Original PDF
    2N3057A Semico Chip: geometry 4500 polarity PNP Original PDF
    2N3057A Central Semiconductor NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Scan PDF
    2N3057A General Diode Transistor Selection Guide Scan PDF
    2N3057A Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3057A Motorola Power Transistor Selection Guide Scan PDF
    2N3057A Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N3057A Unknown Vintage Transistor Datasheets Scan PDF
    2N3057A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3057A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3057A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3057A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3057A Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3057A Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3057A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3057A New England Semiconductor SMALL SIGNAL PNP TRANSISTOR TO-46 Scan PDF
    2N3057A Raytheon Selection Guide 1977 Scan PDF
    2N3057A Semico NPN General Purpose Medium Speed Amplifiers Scan PDF

    2N3057A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3057A

    Abstract: No abstract text available
    Text: Data Sheet No. 2N3057A Generic Part Number: 2N3057A Type 2N3057A Geometry 4500 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/391 Features: • • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-46 case.


    Original     		PDF 2N3057A MIL-PRF-19500/391 MIL-PRF-19500/391 2N3057A

    Untitled

    Abstract: No abstract text available
    Text: 2N3057A Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3057AJ • JANTX level (2N3057AJX)


    Original     		PDF 2N3057A MIL-PRF-19500 2N3057AJ) 2N3057AJX) 2N3057AJV) 2N3057AJS) 2N3057AJSR) MIL-STD-750 MIL-PRF-19500/391

    Untitled

    Abstract: No abstract text available
    Text: 2N3057A RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR DESCRIPTION This RHA level 2N3057A NPN Silicon Transistor device is military qualified up to a JANSR level for high-reliability applications requiring a radiation hardened device. Microsemi also


    Original     		PDF 2N3057A MIL-PRF-19500/391 2N3057A 2N3057. O-206AB) T4-LDS-0262,

    2n3057

    Abstract: No abstract text available
    Text: 2N3057A Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3057A NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and


    Original     		PDF 2N3057A MIL-PRF-19500/391 2N3057A 2N3057 MIL-PRF-19500/391. T4-LDS-0185-1,

    2n3700

    Abstract: JTX 2N3019S 2N3700UB 2N3019 2N3700 JAN 2n3057a
    Text: TECHNICAL DATA 2N3019 JAN, JTX, JTXV 2N3019S JAN, JTX, JTXV 2N3057A JAN, JTX, JTXV 2N3700 JAN, JTX, JTXV 2N3700UB JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/391 2N3019, 2N3019S TO-39 TO-205AD LOW-POWER NPN SILICON TRANSISTORS MAXIMUM RATINGS


    Original     		PDF 2N3019 2N3019S 2N3057A 2N3700 2N3700UB MIL-PRF-19500/391 2N3019; JTX 2N3019S 2N3700 JAN

    Untitled

    Abstract: No abstract text available
    Text: 2N3057A+JAN Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)90 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)500m


    Original     		PDF 2N3057A Freq100M

    2N305

    Abstract: No abstract text available
    Text: 2N3057A Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3057AJ • JANTX level (2N3057AJX)


    Original     		PDF 2N3057A MIL-PRF-19500 2N3057AJ) 2N3057AJX) 2N3057AJV) 2N3057AJS) MIL-STD-750 MIL-PRF-19500/391 2N305

    2N3057A

    Abstract: No abstract text available
    Text: 2N3057A RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR DESCRIPTION This RHA level 2N3057A NPN Silicon Transistor device is military qualified up to a JANSR level for high-reliability applications requiring a radiation hardened device. Microsemi also


    Original     		PDF 2N3057A MIL-PRF-19500/391 2N3057A 2N3057. O-206AB) T4-LDS-0262,

    Untitled

    Abstract: No abstract text available
    Text: 2N3057A+JANTX Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)90 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)500m


    Original     		PDF 2N3057A Freq100M

    Untitled

    Abstract: No abstract text available
    Text: 2N3057A+JANS Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)90 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)500m


    Original     		PDF 2N3057A Freq100M

    Untitled

    Abstract: No abstract text available
    Text: 2N3057A+JANTXV Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)90 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)500m


    Original     		PDF 2N3057A Freq100M

    2N3057A

    Abstract: 2N3057AJ 2N3057AJS 2N3057AJV 2N3057AJX
    Text: 2N3057A Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3057AJ • JANTX level (2N3057AJX)


    Original     		PDF 2N3057A MIL-PRF-19500 2N3057AJ) 2N3057AJX) 2N3057AJV) 2N3057AJS) MIL-STD-750 MIL-PRF-19500/391 2N3057A 2N3057AJ 2N3057AJS 2N3057AJV 2N3057AJX

    2n3019

    Abstract: 2N3700 2N3700UB 2n3019 equivalent 2N3019S JTX 2N3019S 2N3057A 600C 2N3019S JAN
    Text: TECHNICAL DATA 2N3019 JAN, JTX, JTXV, JANS 2N3019S JAN, JTX, JTXV, JANS 2N3057A JAN, JTX, JTXV, JANS 2N3700 JAN, JTX, JTXV, JANS 2N3700UB JAN, JTX, JTXV, JANS Processed per MIL-PRF-19500/391 Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage


    Original     		PDF 2N3019 2N3019S 2N3057A 2N3700 2N3700UB MIL-PRF-19500/391 2N3019; 2N3019S 2N3057A 2N3700 2n3019 equivalent JTX 2N3019S 600C 2N3019S JAN

    2n3019

    Abstract: 2N3700 2n3019 equivalent 2N3700UB 2N3019S 2n3019 transistor 2N3057A 2N3700S test 2N3700 TO-206AB
    Text: TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices 2N3019 2N3019S 2N3057A MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C 1


    Original     		PDF MIL-PRF-19500/391 2N3019 2N3019S 2N3057A 2N3700 2N3700S 2N3019; 2n3019 2N3700 2n3019 equivalent 2N3700UB 2N3019S 2n3019 transistor 2N3057A 2N3700S test 2N3700 TO-206AB

    cczl

    Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
    Text: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL


    Original     		PDF QML-9500-19 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 cczl 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251

    MIL-PRF-19500

    Abstract: 2N4033 2N3055 2N5038 JANS 2n2222au MIL-PRF-19500/336 MIL-PRF-19500/2n7588 MIL-PRF-19500/391 mil-prf-19500/JANTXV2N6341 2N5415
    Text: New England Semiconductor Announces Its Certified Mil-Prf-19500 JANS Program. JANS Qualification Lots In Process By Family Mil-Prf-19500/251 -2N2219 Mil-Prf-19500/291 -2N2907A Mil-Prf-19500/455 -2N5665 Mil-Prf-19500/251 -2N2219A Mil-Prf-19500/291 -2N2907AUA


    Original     		PDF Mil-Prf-19500 Mil-Prf-19500/251 -2N2219 -2N2219A -2N2219AL Mil-Prf-19500/255 -2N2222A 2N4033 2N3055 2N5038 JANS 2n2222au MIL-PRF-19500/336 MIL-PRF-19500/2n7588 MIL-PRF-19500/391 mil-prf-19500/JANTXV2N6341 2N5415

    2N3810 LCC

    Abstract: 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB
    Text: Bipolar Small Signal Transistors Page 1 of 9 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE min/max @ mA/V VCE(sat)@ IC/IB COB V@mA/mA pF fT MHZ PNP TO-5/205AD 2N1132A 40 0.6 30/90@150/10 1.5@150/15 30 60 NPN TO-5/205AD 2N1613,L *


    Original     		PDF O-116 2N3810 LCC 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB

    Untitled

    Abstract: No abstract text available
    Text: ¡J8BBBBB88& iwiHBBffi p e | M s mssssP .rfHHHHHHHHMh. m1 1 itittnnnnn hhhhhhk-. loniftBHhr. IIr ^888o 88% #f 1 l D a ta S h e e t No. 2 N 3 0 5 7 A $ sdL SEMICONDUCTORS G eneric Part Num ber: 2N3057A Type 2N3057A G eom etry 4500 Polarity NPN Qual Level: J A N -J A N S


    OCR Scan     		PDF J8BBBBB88& 2N3057A MiL-PRF-19500/391

    Untitled

    Abstract: No abstract text available
    Text: SE M IC O N D U C T O R TECHNICAL DATA 2N3019SJAN, JTX, JTXV, J A N S 2N3057AJAN, JTX, JTXV, J A N S 2N3700JAN, JTX, JTXV, J A N S CRVSTAIOMCS 2805 Veteran Highway Su»te 14 Ronkonkom* N Y. 1177ii Processed per MIL-S-19500 391 NPN Silicon Sm all-Signal Transistors


    OCR Scan     		PDF 2N3019SJAN, 2N3057AJAN, 2N3700JAN, MIL-S-19500 1177ii 3019S 2N30S7A 2N3700

    2N3019

    Abstract: No abstract text available
    Text: SEMICONDUCTOR! TECHNICAL DATA 2N3019S 2N3057A 2N3700. c r v s t a io n c s 2805 Vetwaos Highway Suite NPN Silicon Small-Signal Transistors 14 Ronkor;koma, N Y. 1177y . .designed for general-purpose switching and amplifier applications MAXIMUM RATINGS Rating


    OCR Scan     		PDF 2N3019S 2N3057A 2N3700. 1177y 2N3700 2N3019S, 2N3057A, 2N3700 2N3019

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    2n3298

    Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
    Text: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max


    OCR Scan     		PDF 2N1613 2N16I3A 2N1613B 2N17I1 2N17IIA 2N3725A 2N3947 2N40B0 2N4137 2N4207 2n3298 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888

    2N5581A

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-46 PACKAGE PNP TO-46 1 I IH hpE @ IC/ Vce min/max @ mA/V VcEO sus VOLTS Ic (max) AMPS 2N2604 45 0.03 60@0.5/5 2N2605 45 0.03 150@0.5/5 2N2944AA 10 0.1 2N2945 20 2N2945AA DEVICE TYPE VcE<sat) @ Ic^B


    OCR Scan     		PDF 2N2604 2N2605 2N2944AA 2N2945 2N2945AA 2N2946 2N2946AA 2N3485 2N3485AA 2N3486 2N5581A

    N3020

    Abstract: 2N2951 2N3114 2N3301 ST 2N3053 2N2219 2N2219A 2N2220 2N2221 2N2221A
    Text: central se mi co nd u ct or 1989963 CENTRAL SEMICOND U C T O R " bï D F | n a n t . 3 oooosit, i " _ 61C 00 216 NPN M E TA L CAN - SW ITCHING A N D G ENER AL PURPOSE Cont'd. < o 00 — 21 VCE V eb h FE at •c V CE V V V min max mA V 2N2219 2N2219A 2N2220


    OCR Scan     		PDF 2N2219 2N2219A 2N2220 2N2221 2N2221A 2N2222 2N2222A 2N2236 CBR30 0000S23 N3020 2N2951 2N3114 2N3301 ST 2N3053