transistor t04 76
Abstract: T04 transistor transistor T04 T04 47 transistor marking code t04 transistor t04 66 transistor marking t04 t04 07 TRANSISTOR Marking transistor t04
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 PMSS3904 NPN switching transistor Product specification Supersedes data of 1997 Apr 07 File under Discrete Semiconductors, SC04 1997 Sep 03 Philips Semiconductors Product specification NPN switching transistor
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M3D187
PMSS3904
PMSS3904
OT323
PMSS3906.
MAM062
SCA54
117047/00/03/pp8
transistor t04 76
T04 transistor
transistor T04
T04 47 transistor
marking code t04
transistor t04 66
transistor marking t04
t04 07 TRANSISTOR
Marking transistor t04
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Untitled
Abstract: No abstract text available
Text: WESTCODE Date:- 10 May, 2001 Data Sheet Issue:- 1 Insulated Gate Bi-polar Transistor Type T0400NA18A capsule type Absolute Maximum Ratings MAXIMUM LIMITS UNITS 1800 ±20 V V RATINGS MAXIMUM LIMITS UNITS DC - Collector current, IGBT (Note 2) Repetitive peak collector current, tp=1ms, IGBT (Note 2)
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T0400NA18A
T0400NA18A.
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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transistor T04
Abstract: SiGe HBT GAIN BLOCK MMIC AMPLIFIER TRANSISTOR 30GHZ THM2004J TRANSISTOR C 608 Germanium Amplifier Circuit diagram Tachyonics
Text: PRELIMINARY THM2004J Wideband Linear Amplifier SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2004J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,
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THM2004J
THM2004J
50-ohm
TAHB09)
30GHz
1000MHz
100MHz
transistor T04
SiGe HBT GAIN BLOCK MMIC AMPLIFIER
TRANSISTOR 30GHZ
TRANSISTOR C 608
Germanium Amplifier Circuit diagram
Tachyonics
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Buffer Amplifier Ghz
Abstract: THM2004J
Text: PRELIMINARY THM2004J Wideband Linear Amplifier SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2004J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,
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THM2004J
THM2004J
50-ohm
TAHB09)
30GHz
1000MHz
100MHz
Buffer Amplifier Ghz
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PDF
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SUT041C
Abstract: No abstract text available
Text: SUT041C Dual NPN Bipolar transistor Descriptions • General purpose amplifier • Recommended for LED Drive Application Features • Thermally Enhanced Power PKG • Low saturation: VCE sat = 0.5V Max • 2 NPN chips in TESOP-8M Package TESOP-8M Ordering Information
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SUT041C
KSD-T7L001-000
SUT041C
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Untitled
Abstract: No abstract text available
Text: SUT041C Dual NPN Bipolar transistor Descriptions • General purpose amplifier • Recommended for LED Drive Application Features • Thermally Enhanced Power PKG • Low saturation: VCE sat = 0.5V Max • 2 NPN chips in TESOP-8M Package TESOP-8M Ordering Information
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SUT041C
KSD-T7L001-000
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PDF
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2N2945A
Abstract: 2N2946A 2N2944 2N2944A 2N2945
Text: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 September 1999 MIL-PRF-19500/382C 28 July 1999 SUPERSEDING MIL-S-19500/382B 4 October 1993 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER
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MIL-PRF-19500/382C
MIL-S-19500/382B
2N2944A,
2N2945A,
2N2946A
MIL-PRF-19500.
2N2945A
2N2946A
2N2944
2N2944A
2N2945
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PDF
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2N3485A
Abstract: 2N3486A
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 July 2002. INCH-POUND MIL-PRF-19500/392F 5 April 2002 SUPERSEDING MIL-PRF-19500/392E 6 June 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING
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MIL-PRF-19500/392F
MIL-PRF-19500/392E
2N3485A,
2N3486A,
MIL-PRF-19500.
T0-46)
2N3485A
2N3486A
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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PDF
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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PDF
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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D1571
Abstract: AA0463 st cpcap zy 406 D157 DSP56300 DSP56301 G30-88 G38-87 series T212 data
Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56301 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56301 specifications are preliminary and are from design simulations, and may not be fully tested or guaranteed at this
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DSP56301
AA0500
b3b72MA
D1571
AA0463
st cpcap
zy 406
D157
DSP56300
G30-88
G38-87
series T212 data
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PDF
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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transistor t05
Abstract: N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058
Text: DIODE TRANSISTOR CO INC AM de ! 5flMfl35g D O D O m O 1 | o/ DIODE TRANSISTOR CD.i \ C. (201) 688-0400 • Telex: 139-385 • Outside NY & NJ area call TO LL FR EE 800-526-4581 FAX No. 201-575-5883 SILICON NPN LOW POWER TRANSISTORS DEVICES PKG DEVICES 2N327A
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5flMfl35g
DETRdf\J515TQR
2N327A
N328A
2N329A
2N330
2N726
2N863
2N939
2N945
transistor t05
N2907
N2907A
2N3040
t05 transistor
2N2927A
2N2280
2N3064
2N1921
2N3058
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TT 2222
Abstract: No abstract text available
Text: N AMER PHIL IPS/D ISCR ETE btiS3T31 DDSTOMS STb I IAPX B LV 45/12 b'lE D V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optimum temperature profile
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btiS3T31
OT-119)
BLV45/12
TT 2222
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transistor t04
Abstract: T04 transistor transistor marking t04 transistor 1022 t04 07 TRANSISTOR marking code t04 PMSS3904 Philips SOT323 t04 "transistor" SS3904 Marking transistor t04
Text: Product specification Philips Semiconductors PMSS3904 NPN switching transistor FEATURES PINNING • Low current max. 100 mA DESCRIPTION PIN • Low voltage (max. 40 V). APPLICATIONS 1 base 2 emitter 3 collector • General purpose switching and amplification
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PMSS3904
OT323
PMSS3906.
PMSS3904
OT323)
SS3904
transistor t04
T04 transistor
transistor marking t04
transistor 1022
t04 07 TRANSISTOR
marking code t04
PMSS3904 Philips SOT323
t04 "transistor"
SS3904
Marking transistor t04
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2n189
Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits
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2G101*
2G102*
2G103*
2G109
2G220
2G221
2G222
2G223
2G224
2n189
2N1136b
2N420
B1151 EQUIVALENT
2SA114
OC59
2T312
2T203
SFT125
2N1152
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PDF
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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Untitled
Abstract: No abstract text available
Text: - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Description CECC Ceramic Surface Mount Dual Transistor Dual device in CSM Ceramic Surface Mount Dual device in CSM 50004-017 50004-017 50004-017 50004-017 50004-133 50004-133 50003-021 50003-021 Polarity Package lc_cont
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transistor t04 76
Abstract: GV 475 diode transistor T04 NDB6060 004027S
Text: Na t io n a I Sem iconductor~ M arch 19 96 N DP6060/ NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDP6060/NDB6060
025ft
b50113G
0DMQ27H
bS01130
004027S
transistor t04 76
GV 475 diode
transistor T04
NDB6060
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FIL-3C
Abstract: to-92 mosfet 13T13
Text: SÖE » SEP1TECH CORP • 013^13^ ODOBTìl OSO POWER MOSFET IN HERMETIC ISOLATED T0257AB PACKAGE SM8F13* SM8F33* SM8F23* SM8F43* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low
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T0257AB
SM8F13*
SM8F33*
SM8F23*
SM8F43*
T0258AA
FT0258AA
HDS100
FIL-3C
to-92 mosfet 13T13
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PDF
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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