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    TRANSISTOR SIEMEN Search Results

    TRANSISTOR SIEMEN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SIEMEN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor SD335

    Abstract: SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339
    Text: RFT Beschreibung Si-npn-Planar-Epitaxie, TO39 Si-npn-Planar-EpitaxieSC116 NF-Transistor Si-npn-Planar-EpitaxieSC117 NF-Transistor Si-npn-Planar-EpitaxieSC118 NF-Transistor Si-npn-Planar-EpitaxieSC119 NF-Transistor Si-npn-Planar-EpitaxieSC236 NF-Transistor für Vorund Treiberstufen


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    PDF Si-npn-Planar-EpitaxieSC116 Si-npn-Planar-EpitaxieSC117 Si-npn-Planar-EpitaxieSC118 Si-npn-Planar-EpitaxieSC119 Si-npn-Planar-EpitaxieSC236 Si-npn-Planar-EpitaxieSC237 Si-npn-Planar-EpitaxieSC238 VorSC239 Si-pnp-Planar-EpitaxieSC307 Si-pnp-Planar-EpitaxieSC308 transistor SD335 SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339

    Siemens 1736

    Abstract: 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S BCY66 Q60203-Y66 10-lmA Scans-00145246 Q004312
    Text: 2SC D m ISIEG 023SbQS Q0Q4312 ì NPN Silicon Planar Transistor SIEMENS AKTIEN6ESELLSCHAF BCY66 $12 BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for


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    PDF 0235bG5 Q004312 BCY66 Q60203-Y66 TcaseS45Â fi23Sb05 Q0QM31? 120Hz Siemens 1736 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S BCY66 Q60203-Y66 10-lmA Scans-00145246 Q004312

    IC 4556

    Abstract: 4556D transistor Siemens 14 S S 92 GPB16 4556 d transistor BF 939
    Text: 2SC D • a23SbOS OQOMSSb 4 WÊSIZ6 . PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 939 4556 D - BF 93 9 is a PNP silicon RF pianar transistor in TO 92 plastic package DIN 41868 . The transistor is particularly suitable for controllable VH F input stages in TV tuners.


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    PDF a23SbOS 62702-F G--14 IC 4556 4556D transistor Siemens 14 S S 92 GPB16 4556 d transistor BF 939

    K1 transistor

    Abstract: pnp vhf transistor
    Text: 25C D • 523SbQS QDQMS3‘i 4 WiSIZG f PNP Silicon Planar Transistor ' SIEMENS AKTIEN6ESELLSCHAF >39 BF767 0- BF 767 is a PNP silicon planar transistor including passivated surface in TO 236 plastic package 23 A 3 DIN 41869 . The transistor is particularly suitable for use in low-noise,


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    PDF 523SbQS BF767 Q62702-F553 K1 transistor pnp vhf transistor

    nf950

    Abstract: transistor BF 37 transistor BF 236 TRANSISTOR 2SC 950 TRANSISTOR JC 539 2sc 1948 a Q62702-F553 transistor code mark NF
    Text: 25C D • 523SbQS QQQMS3‘i 4 Wi SI ZG f PNP Silicon Planar Transistor ' SIEMENS AKTIEN6ESELLSCHAF >39 BF767 0- BF 767 is a PNP silicon planar transistor including passivated surface in TO 2 36 plastic package 23 A 3 DIN 41869 . The transistor is particularly suitable for use in low-noise,


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    PDF 023SbQS Q62702-F553 nf950 transistor BF 37 transistor BF 236 TRANSISTOR 2SC 950 TRANSISTOR JC 539 2sc 1948 a Q62702-F553 transistor code mark NF

    Untitled

    Abstract: No abstract text available
    Text: 5SC D m 023SbQS Q004312 ì IS I E G NPN Silicon Planar Transistor BCY6 6 7 -1 7 -2 .4 SIEMENS AKTIEN6ESELLSCHAF BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for


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    PDF 023SbQS Q004312 60203-Y66 BCY66 QQ0M31Ö

    Untitled

    Abstract: No abstract text available
    Text: fcT I ISI E G 2SC D • Ö235b05 G0G4352 T NPN Silicon Planar Transistor BD 424 T- 23- o f SIEMENS AKTIEN6ESELLSCHAF 25C 04352 BD 424 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. It is particularly intended for use as driver transistor in horizontal deflection stages of TV sets


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    PDF 235b05 G0G4352 Q62702-D1068

    TRANSISTOR BFW 11

    Abstract: bfw 10 transistor GPA 76 transistor 2sc 546 transistor bfw 83
    Text: I ESC D • 053SbOS 0004734 2 ■ S I E û ! NPN Silicon RF Broadband Transistor BFW 93 design SIEMENS AKTIENÔESELLSCHAF Not for new CAI - - BFW 93 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance, similar to TO 119 50 B 3 DIN 41867 . The transistor is particularly suitable for use


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    PDF 053SbOS Q62702-F365 a23SbQS 00DM73b TRANSISTOR BFW 11 bfw 10 transistor GPA 76 transistor 2sc 546 transistor bfw 83

    3055 transistor

    Abstract: 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055
    Text: 2SC T> m flS3SbOS D004T11 * mZIZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful A F Output Stages 2 N 3055 - SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for


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    PDF D004T11 Q62702-U58 B--01 fl23Sb05 A23SbDS B--03 3055 transistor 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055

    S100 NPN Transistor

    Abstract: BF603 S100 transistor BF503 Q62702-F574 S100 S400 transistor 503
    Text: L¿ I 2SC D • flE35b05 GGG4507 S NPN Silicon RF Transistor I SI E 6 BF 503 SIEMENS AKTIENGESELLSCHAF BF 5 0 3 is an NPN silicon planar RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly intended for use in VHF amplifiers, VH F mixers, and VHF


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    PDF fl23SbOS 00Q4507 Q62702-F574 S100 NPN Transistor BF603 S100 transistor BF503 Q62702-F574 S100 S400 transistor 503

    transistor BD 110

    Abstract: Q62702-D905 0437 Q62902-B62 Q62902-B63 transistor BD 524
    Text: ESC D fi235bQ5 0004377 4 m i l E G • NPN Silicon Planar Transistor BD 524 SIEMENS AKTIENGESELLSCHAF 0^377 T -3 asr 0 - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal


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    PDF fl235bQ5 Q62702-D905 Q62902-B63 Q62902-B62 transistor BD 110 0437 Q62902-B62 transistor BD 524

    transistor 926

    Abstract: pnp vhf transistor
    Text: . I ESC D • SEBShOS 0004554 0 H S I E 6 7= 7 / - / 7 BF 926 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF °455^-— 0 BF 926 is an epitaxial PNP silicon planar transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is intended for use in VHF oscillator stages, in particular for


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    PDF Q62702-F t23Sb05 BF926 transistor 926 pnp vhf transistor

    transistor BD 424

    Abstract: a06 transistor 000M353 BD424 Q62702-D1068 S100 transistor A08 A07 NPN transistor transistor bd 202
    Text: bâ I 25C D • fl23Sb05 G0D4352 T ISIEG BD 424 NPN Silicon Planar Transistor T- 23- o f SIEMENS AKTIEN6ESELLSCHAF 25C 04352 BD 424 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. It is particularly intended for use as driver transistor in horizontal deflection stages of TV sets


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    PDF 235b05 G0G4352 Q62702-D1068 QDQ43SM BD424 transistor BD 424 a06 transistor 000M353 BD424 Q62702-D1068 S100 transistor A08 A07 NPN transistor transistor bd 202

    BFX89

    Abstract: Transistor BFX 90 BFX 514 Q62702-F296 Q 371 Transistor 2sc 684
    Text: 2SC D • û23ShQS 000474^ 4 W S I E ù T ~ Z 'tï NPN Silicon Transistor for RF Broadband Amplifier BFX 89 - SIEMENS AKTIENGESELLSCHAF BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general


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    PDF 23ShQS Q62702-F296 2JS41W BFX89 Transistor BFX 90 BFX 514 Q62702-F296 Q 371 Transistor 2sc 684

    Y2923

    Abstract: 2sc 965 transistor b0961 Q62702-S154 lfe10
    Text: 5SC D • û23SbOS GGQM'îlS b « S I E G 7 ^ ? - ^ 3 2 N 4033 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF 2 N 4033 is an epitaxial PNP silicon planar transistor in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistor is particularly intended for


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    PDF 023SbOS Q62702-S154 fl235b05 Y2923 2sc 965 transistor b0961 Q62702-S154 lfe10

    BF568

    Abstract: F-05 Q62702-F626 2SCT transistor code mark NF BF 145 transistor pnp vhf transistor
    Text: aSC S • ô23SbQS QQ04S23 0 « S I E G 3 t-rs~ r - BF 568 PNP Silicon Planar Transistor SIEMENS AKTIEN6ESELLSCHAF BF 568 is a PNP silicon planar transistor with passivated surface in TO 2 36 plastic package 23 A 3 DIN 4.1869 . The transistor is particularly suitable for use in low-noise gain-controlled


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    PDF a23SbQS Q62702-F626 BF568 F-05 Q62702-F626 2SCT transistor code mark NF BF 145 transistor pnp vhf transistor

    3055 transistor

    Abstract: transistor 3055 3055 2N3055 2SC 2276 M 3055 power transistor n3055 2N3066 power transistor 3055 33S3
    Text: 2SC T> m flS3SbOS D004T11 * mZI ZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful AF Output Stages 2 N 3055 -SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for


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    PDF D004T11 Q62702-U58 005ms aa35b05 3055 transistor transistor 3055 3055 2N3055 2SC 2276 M 3055 power transistor n3055 2N3066 power transistor 3055 33S3

    2sc 103 transistor

    Abstract: transistor BD 430
    Text: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^f’ 33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 429 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 430 it is particularly suitable for use in


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    PDF Q62702-D1069 -T-33-OS fl23SbQS BD429 2sc 103 transistor transistor BD 430

    BD 130 NPN transistor

    Abstract: transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330
    Text: 25C D • 623SbOS 000434b 4 « S I E G _ NPN Silicon Planar Transistor BD 329 -SIEMENS AKTIENGESELLSCHAF 25C 043^6 O-.7 ^ SI - 0 7 BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly


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    PDF 00043Mb Q62702-D394 329/BD Q62702-D401 Q62902-B63 100ps 200jiS BD329 BD 130 NPN transistor transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330

    Untitled

    Abstract: No abstract text available
    Text: 5SC D • û23SbOS GGQM'îlS b « S I E G 7 ^ ? - ^ 3 2 N 4033 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF 2 N 4 0 3 3 is an epitaxial PNP silicon planar transistor in TO 3 9 case 5 C 3 DIN 41 8 7 3 . The collector is electrically connected to the case. The transistor is particularly intended for


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    PDF 23SbOS

    TRANSISTOR D 570

    Abstract: BF 145 transistor transistor bf
    Text: 2SC D • Ö23SLQS 0GQ4S23 Q H S I E G r - 3 t-rs ~ BF 568 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 5 6 8 is a PNP silicon planar transistor with passivated surface in TO 2 3 6 plastic package 2 3 A 3 DIN 4.1869 . The transistor is particularly suitable for use in low-noise gain-controlled


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    PDF 23SLQS 0GQ4S23 TRANSISTOR D 570 BF 145 transistor transistor bf

    BD429

    Abstract: D1069 Q62702-D1069 fcdc 2SC 102 bD 106 transistor
    Text: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^ f’33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 4 2 9 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 3 0 it is particularly suitable for use in


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    PDF fl23Sfc Q62702-D1069 BD429 fnb33 D1069 Q62702-D1069 fcdc 2SC 102 bD 106 transistor

    transistor BD

    Abstract: TRANSISTOR bd 330
    Text: 2SC D • fl23SbDS QQQHBMI T M S I E G PNP Silicon Planar Transistor BD 330 _ 25C0 4 3 4 9 D T - 3 1 '/ ? SIEMENS AKTIENGESELLSCHAF BO 330 is an epitaxial PNP silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 329 it is particularly


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    PDF fl23SbDS 330/BD Q62702-D395 Q62702-D401 Q62902-B63 235bQS GQ04351 BD330 transistor BD TRANSISTOR bd 330

    transistor A 562

    Abstract: Q62702-F542 transistor bf BF56 bf562
    Text: asc D • fl23SbOS 000 MS 2 1 7 « S I E G N P N Silicon RF Transistor SIEMENS AKTIENGESELLSCHAF :l T '2 f - / 7 BF 562 , ° BF 562 is an NPN silicon RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly suitable for controllable VHF input stages in TV tuners.


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    PDF fl23SbOS 00QMS21 Q62702-F542 transistor A 562 Q62702-F542 transistor bf BF56 bf562